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Deformable Molecular Crystal on 2D Crystal: A New Way to Build Nanoscale Periodic Trap** Sites for Interlayer Excitons
Authors:
Kushal Rijal,
Stephanie Amos,
Pavel Valencia-Acuna,
Fatimah Rudayni,
Neno Fuller,
Hui Zhao,
Hartwin Peelaers,
Wai-Lun Chan
Abstract:
The nanoscale moiré pattern formed at 2D transition metal dichalcogenide crystal (TMDC) heterostructures provides periodic trap** sites for excitons, which is essential for realizing various exotic phases such as artificial exciton lattices, Bose-Einstein condensates, and exciton insulators. At organic molecule/TMDC heterostructures, similar periodic potentials can be formed via other degrees of…
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The nanoscale moiré pattern formed at 2D transition metal dichalcogenide crystal (TMDC) heterostructures provides periodic trap** sites for excitons, which is essential for realizing various exotic phases such as artificial exciton lattices, Bose-Einstein condensates, and exciton insulators. At organic molecule/TMDC heterostructures, similar periodic potentials can be formed via other degrees of freedom. We utilize the structure deformability of a 2D molecular crystal as a degree of freedom to create a periodic nanoscale potential that can trap interlayer excitons (IXs). Specifically, two semiconducting molecules, PTCDI and PTCDA, which possess similar bandgaps and ionization potentials but form different lattice structures on MoS2, are investigated.The PTCDI lattice on MoS2 is distorted geometrically, which lifts the degeneracy of the two molecules within the crystal's unit cell. The degeneracy lifting results in a spatial variation of the molecular orbital energy, with an amplitude and periodicity of ~ 0.2 eV and ~ 2 nm, respectively. On the other hand, no such energy variation is observed in PTCDA/MoS2, where the PTCDA lattice is much less distorted. The periodic variation in molecular orbital energies provides effective trap** sites for IXs. For IXs formed at PTCDI/MoS2, rapid spatial localization of the electron in the organic layer towards the interface is observed, which demonstrate the effectiveness of these interfacial IX's traps.
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Submitted 13 December, 2022;
originally announced December 2022.
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Mid-infrared monocrystalline interference coatings with excess optical loss below 10 ppm
Authors:
G. Winkler,
L. W. Perner,
G. -W. Truong,
G. Zhao,
D. Bachmann,
A. S. Mayer,
J. Fellinger,
D. Follman,
P. Heu,
C. Deutsch,
D. M. Bailey,
H. Peelaers,
S. Puchegger,
A. J. Fleisher,
G. D. Cole,
O. H. Heckl
Abstract:
We present high-reflectivity substrate-transferred single-crystal GaAs/AlGaAs interference coatings at a center wavelength of 4.54 um with record-low excess optical loss below 10 parts per million. These high-performance mirrors are realized via a novel microfabrication process that differs significantly from the production of amorphous multilayers generated via physical vapor deposition processes…
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We present high-reflectivity substrate-transferred single-crystal GaAs/AlGaAs interference coatings at a center wavelength of 4.54 um with record-low excess optical loss below 10 parts per million. These high-performance mirrors are realized via a novel microfabrication process that differs significantly from the production of amorphous multilayers generated via physical vapor deposition processes. This new process enables reduced scatter loss due to the low surface and interfacial roughness, while low background do** in epitaxial growth ensures strongly reduced absorption. We report on a suite of optical measurements, including cavity ring-down, transmittance spectroscopy, and direct absorption tests to reveal the optical losses for a set of prototype mirrors. In the course of these measurements, we observe a unique polarization-orientation-dependent loss mechanism which we attribute to elastic anisotropy of these strained epitaxial multilayers. A future increase in layer count and a corresponding reduction of transmittance will enable optical resonators with a finesse in excess of 100 000 in the mid-infrared spectral region, allowing for advances in high resolution spectroscopy, narrow-linewidth laser stabilization, and ultrasensitive measurements of various light-matter interactions.
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Submitted 10 September, 2020;
originally announced September 2020.
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Intra- and Inter-Conduction Band Optical Absorption Processes in $β$-Ga$_2$O$_3$
Authors:
Arjan Singh,
Okan Koksal,
Nicholas Tanen,
Jonathan McCandless,
Debdeep Jena,
Huili,
Xing,
Hartwin Peelaers,
Farhan Rana
Abstract:
$β$-Ga$_2$O$_3$ is an ultra-wide bandgap semiconductor and is thus expected to be optically transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to this expectation, it is found here that free electrons in n-doped $β$-Ga$_2$O$_3…
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$β$-Ga$_2$O$_3$ is an ultra-wide bandgap semiconductor and is thus expected to be optically transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to this expectation, it is found here that free electrons in n-doped $β$-Ga$_2$O$_3$ absorb light from the IR to the UV wavelength range via intra- and inter-conduction band optical transitions. Intra-conduction band absorption occurs via an indirect optical phonon mediated process with a $1/ω^{3}$ dependence in the visible to near-IR wavelength range. This frequency dependence markedly differs from the $1/ω^{2}$ dependence predicted by the Drude model of free-carrier absorption. The inter-conduction band absorption between the lowest conduction band and a higher conduction band occurs via a direct optical process at $λ\sim 349$ nm (3.55 eV). Steady state and ultrafast optical spectroscopy measurements unambiguously identify both these absorption processes and enable quantitative measurements of the inter-conduction band energy, and the frequency dependence of absorption. Whereas the intra-conduction band absorption does not depend on light polarization, inter-conduction band absorption is found to be strongly polarization dependent. The experimental observations, in excellent agreement with recent theoretical predictions for $β$-Ga$_2$O$_3$, provide important limits of sub-bandgap transparency for optoelectronics in the deep-UV to visible wavelength range, and are also of importance for high electric field transport effects in this emerging semiconductor.
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Submitted 29 July, 2020; v1 submitted 26 June, 2020;
originally announced June 2020.
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Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films
Authors:
Yiling Yu,
Yifei Yu,
Yongqing Cai,
Wei Li,
Alper Gurarslan,
Hartwin Peelaers,
David E. Aspnes,
Chris G. Van de Walle,
Nhan V. Nguyen,
Yong-Wei Zhang,
Linyou Cao
Abstract:
We systematically measure the dielectric function of atomically thin MoS2 films with different layer numbers and demonstrate that excitonic effects play a dominant role in the dielectric function when the films are less than 5-7 layers thick. The dielectric function shows an anomalous dependence on the layer number. It decreases with the layer number increasing when the films are less than 5-7 lay…
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We systematically measure the dielectric function of atomically thin MoS2 films with different layer numbers and demonstrate that excitonic effects play a dominant role in the dielectric function when the films are less than 5-7 layers thick. The dielectric function shows an anomalous dependence on the layer number. It decreases with the layer number increasing when the films are less than 5-7 layers thick but turns to increase with the layer number for thicker films. We show that this is because the excitonic effect is very strong in the thin MoS2 films and its contribution to the dielectric function may dominate over the contribution of the band structure. We also extract the value of layer-dependent exciton binding energy and Bohr radius in the films by fitting the experimental results with an intuitive model. The dominance of excitonic effects is in stark contrast with what reported at conventional materials whose dielectric functions are usually dictated by band structures. The knowledge of the dielectric function may enable capabilities to engineer the light-matter interactions of atomically thin MoS2 films for the development of novel photonic devices, such as metamaterials, waveguides, light absorbers, and light emitters.
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Submitted 11 October, 2015;
originally announced October 2015.
