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Showing 1–4 of 4 results for author: Peña, T

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  1. arXiv:2311.17508  [pdf, other

    cs.LG physics.data-an

    Model Performance Prediction for Hyperparameter Optimization of Deep Learning Models Using High Performance Computing and Quantum Annealing

    Authors: Juan Pablo García Amboage, Eric Wulff, Maria Girone, Tomás F. Pena

    Abstract: Hyperparameter Optimization (HPO) of Deep Learning-based models tends to be a compute resource intensive process as it usually requires to train the target model with many different hyperparameter configurations. We show that integrating model performance prediction with early stop** methods holds great potential to speed up the HPO process of deep learning models. Moreover, we propose a novel a… ▽ More

    Submitted 29 November, 2023; originally announced November 2023.

  2. arXiv:2210.03486  [pdf

    physics.app-ph cond-mat.mtrl-sci

    Ultrasonic Delamination Based Adhesion Testing for High-Throughput Assembly of van der Waals Heterostructures

    Authors: Tara Peña, Jewel Holt, Arfan Sewaket, Stephen M. Wu

    Abstract: Two-dimensional (2D) materials assembled into van der Waals (vdW) heterostructures contain unlimited combinations of mechanical, optical, and electrical properties that can be harnessed for potential device applications. Critically, these structures require control over interfacial adhesion in order for them to be constructed and to have enough integrity to survive industrial fabrication processes… ▽ More

    Submitted 9 December, 2022; v1 submitted 7 October, 2022; originally announced October 2022.

  3. arXiv:2210.03480  [pdf

    cond-mat.mes-hall physics.app-ph

    Moiré Engineering in 2D Heterostructures with Process-Induced Strain

    Authors: Tara Peña, Aditya Dey, Shoieb A. Chowdhury, Ahmad Azizimanesh, Wenhui Hou, Arfan Sewaket, Carla L. Watson, Hesam Askari, Stephen M. Wu

    Abstract: We report deterministic control over moiré superlattice interference pattern in twisted bilayer graphene by implementing designable device-level heterostrain with process-induced strain engineering, a widely used technique in industrial silicon nanofabrication processes. By depositing stressed thin films onto our twisted bilayer graphene samples, heterostrain magnitude and strain directionality ca… ▽ More

    Submitted 3 April, 2023; v1 submitted 7 October, 2022; originally announced October 2022.

  4. arXiv:1905.07423  [pdf

    physics.app-ph cond-mat.mtrl-sci

    Strain-Based Room-Temperature Non-Volatile MoTe$_2$ Ferroelectric Phase Change Transistor

    Authors: Wenhui Hou, Ahmad Azizimanesh, Arfan Sewaket, Tara Peña, Carla Watson, Ming Liu, Hesam Askari, Stephen M. Wu

    Abstract: The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue to scale down to increase computational performance, physical limitations from nanoscale field-effect operation begin to cause undesirable current leakage that… ▽ More

    Submitted 17 May, 2019; originally announced May 2019.