Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting
Authors:
Jiarui Gong,
Donghyeok Kim,
Hokyung Jang,
Fikadu Alema,
Qingxiao Wang,
Tien Khee Ng,
Shuoyang Qiu,
Jie Zhou,
Xin Su,
Qinchen Lin,
Ranveer Singh,
Haris Abbasi,
Kelson Chabak,
Gregg Jessen,
Clincy Cheung,
Vincent Gambin,
Shubhra S. Pasayat,
Andrei Osinsky,
Boon,
S. Ooi,
Chirag Gupta,
Zhenqiang Ma
Abstract:
The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type do** in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face se…
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The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type do** in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face severe challenges in further advancing the $β$-Ga$_2$O$_3$ bipolar devices due to their unfavorable band alignment and the poor p-type oxide crystal quality. In this work, we applied the semiconductor grafting approach to fabricate monocrystalline Si/$β$-Ga$_2$O$_3$ p-n diodes for the first time. With enhanced concentration of oxygen atoms at the interface of Si/$β$-Ga$_2$O$_3$, double side surface passivation was achieved for both Si and $β$-Ga$_2$O$_3$ with an interface Dit value of 1-3 x 1012 /cm2 eV. A Si/$β$-Ga$_2$O$_3$ p-n diode array with high fabrication yield was demonstrated along with a diode rectification of 1.3 x 107 at +/- 2 V, a diode ideality factor of 1.13 and avalanche reverse breakdown characteristics. The diodes C-V shows frequency dispersion-free characteristics from 10 kHz to 2 MHz. Our work has set the foundation toward future development of $β$-Ga$_2$O$_3$-based transistors.
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Submitted 30 May, 2023;
originally announced May 2023.
Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance
Authors:
Swarnav Mukhopadhyay,
Cheng Liu,
Jiahao Chen,
Surjava Sanyal,
Ruixin Bai,
Guangying Wang,
Chirag Gupta,
Shubhra Pasayat
Abstract:
In this article, high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/ \Box ) is reported. Optimization of growth conditions, such as reduced growth rate, low carbon incorporation, and thickness optimization of different epitaxial layers allowed to grow a crack-free high composition and thick AlGaN barrie…
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In this article, high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/ \Box ) is reported. Optimization of growth conditions, such as reduced growth rate, low carbon incorporation, and thickness optimization of different epitaxial layers allowed to grow a crack-free high composition and thick AlGaN barrier layer HEMT structure. A significantly high two-dimensional electron gas (2DEG) density of 1.46 \times 10^{13} cm^{-2} with a room temperature mobility of 1710 cm^{2}/V.s is obtained by Hall measurement using the Van-Der-Pauw method. These state-of-the-art results show great potential for high-power Ga-polar HEMT design on the sapphire substrate.
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Submitted 11 April, 2023;
originally announced April 2023.
