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Infrared Nanoimaging of Hydrogenated Perovskite Nickelate Synaptic Devices
Authors:
Sampath Gamage,
Sukriti Manna,
Marc Zajac,
Steven Hancock,
Qi Wang,
Sarabpreet Singh,
Mahdi Ghafariasl,
Kun Yao,
Tom Tiwald,
Tae Joon Park,
David P. Landau,
Haidan Wen,
Subramanian Sankaranarayanan,
Pierre Darancet,
Shriram Ramanathan,
Yohannes Abate
Abstract:
Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nick…
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Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nickel oxide (H-NdNiO3) devices and reveal how an applied field perturbs dopant distribution at the nanoscale. This perturbation leads to stripe phases of varying conductivity perpendicular to the applied field, which define the macroscale electrical characteristics of the devices. Hyperspectral nano-FTIR imaging in conjunction with density functional theory calculations unveil a real-space map of multiple vibrational states of H-NNO associated with OH stretching modes and their dependence on the dopant concentration. Moreover, the localization of excess charges induces an out-of-plane lattice expansion in NNO which was confirmed by in-situ - x-ray diffraction and creates a strain that acts as a barrier against further diffusion. Our results and the techniques presented here hold great potential to the rapidly growing field of memristors and neuromorphic devices wherein nanoscale ion motion is fundamentally responsible for function.
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Submitted 29 August, 2023;
originally announced September 2023.
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Electrically tunable VO2-metal metasurface for mid-infrared switching, limiting, and nonlinear isolation
Authors:
Jonathan King,
Chenghao Wan,
Tae Joon Park,
Sanket Despande,
Zhen Zhang,
Shriram Ramanathan,
Mikhail A. Kats
Abstract:
We demonstrate an electrically controlled metal-VO2 metasurface for the mid-wave infrared that simultaneously functions as a tunable optical switch, an optical limiter with a tunable limiting threshold, and a nonlinear optical isolator with a tunable operating range. The tunability is achieved via Joule heating through the metal comprising the metasurface, resulting in an integrated optoelectronic…
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We demonstrate an electrically controlled metal-VO2 metasurface for the mid-wave infrared that simultaneously functions as a tunable optical switch, an optical limiter with a tunable limiting threshold, and a nonlinear optical isolator with a tunable operating range. The tunability is achieved via Joule heating through the metal comprising the metasurface, resulting in an integrated optoelectronic device. As an optical switch, the device has an experimental transmission ratio of ~100 when varying the bias current. Operating as an optical limiter, we demonstrated tunability of the limiting threshold from 20 mW to 180 mW of incident laser power. Similar degrees of tunability are also achieved for nonlinear optical isolation, which enables asymmetric (nonreciprocal) transmission.
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Submitted 21 July, 2023; v1 submitted 15 March, 2023;
originally announced March 2023.
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First Demonstration of Robust Tri-Gate \b{eta}-Ga2O3 Nano-membrane Field-Effect Transistors Operated Up to 400 °C
Authors:
Hagyoul Bae,
Tae Joon Park,
**hyun Noh,
Wonil Chung,
Mengwei Si,
Shriram Ramanathan,
Peide D. Ye
Abstract:
Nano-membrane tri-gate beta-gallium oxide (\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized features can be defined with a 50 nm fin structure. For high-quality interface between \b{eta}-Ga2O3 and gate dielectric, atomic layer-deposited 15-nm-thick alum…
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Nano-membrane tri-gate beta-gallium oxide (\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized features can be defined with a 50 nm fin structure. For high-quality interface between \b{eta}-Ga2O3 and gate dielectric, atomic layer-deposited 15-nm-thick aluminum oxide (Al2O3) was utilized with Tri-methyl-aluminum (TMA) self-cleaning surface treatment. The fabricated devices demonstrate extremely low subthreshold slope (SS) of 61 mV/dec, high drain current (IDS) ON/OFF ratio of 1.5 X 109, and negligible transfer characteristic hysteresis. We also experimentally demonstrated robustness of these devices with current-voltage (I-V) characteristics measured at temperatures up to 400 °C.
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Submitted 4 May, 2021;
originally announced May 2021.
