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Hydrogen bonding in water under extreme confinement unveiled by nanoscale vibrational spectroscopy and simulations
Authors:
Xintong Xu,
Xin **,
Matthias Kuehne,
De-Liang Bao,
Joel Martis,
Yu-Ming Tu,
Cody L. Ritt,
Juan Carlos Idrobo,
Michael S. Strano,
Arun Majumdar,
Sokrates T. Pantelides,
Jordan A. Hachtel
Abstract:
Fluids under extreme confinement exhibit distinctly new properties compared to their bulk analogs. Understanding the structure and intermolecular bonding of confined water lays the foundation for creating and improving applications at the water-energy nexus. However, probing confined water experimentally at the length scale of intermolecular and surface forces has remained a challenge. Here, we re…
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Fluids under extreme confinement exhibit distinctly new properties compared to their bulk analogs. Understanding the structure and intermolecular bonding of confined water lays the foundation for creating and improving applications at the water-energy nexus. However, probing confined water experimentally at the length scale of intermolecular and surface forces has remained a challenge. Here, we report a combined experiment/theory framework to reveal changes in H-bonding environment and the underlying molecular structure of confined water inside individual carbon nanotubes. H-bonding is directly probed through the O-H stretch frequency with vibrational electron energy-loss spectroscopy and compared to spectra from molecular-dynamics simulations based on density-functional-theory. Experimental spectra show that water in larger carbon nanotubes exhibit the bonded O-H vibrations of bulk water, but at smaller diameters, the frequency blueshifts to near the 'free' O-H stretch found in water vapor and hydrophobic surfaces. The matching simulations reveal that, in addition to steric confinement, the tube's vibrations play a key role in breaking up the H-bond network, resulting in an orientationally-dispersed, non-H-bonded phase. Furthermore, the temperature-dependence of the vibrations is investigated, providing insights into phase transitions and the confined-water density. This research demonstrates the potential of the experiment/theory framework to explore unprecedented aspects of structure and bonding in confined fluids.
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Submitted 27 February, 2024;
originally announced February 2024.
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Decoupled few-femtosecond phase transitions in vanadium dioxide
Authors:
Christian Brahms,
Lin Zhang,
Xiao Shen,
Utso Bhattacharya,
Maria Recasens,
Johann Osmond,
Tobias Grass,
Ravindra W. Chhajlany,
Kent A. Hallman,
Richard F. Haglund,
Sokrates T. Pantelides,
Maciej Lewenstein,
John C. Travers,
Allan S. Johnson
Abstract:
The nature of the insulator-to-metal phase transition in vanadium dioxide (VO2) is one of the longest-standing problems in condensed-matter physics. Ultrafast spectroscopy has long promised to determine whether the transition is primarily driven by the electronic or structural degree of freedom, but measurements to date have been stymied by their sensitivity to only one of these components and/or…
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The nature of the insulator-to-metal phase transition in vanadium dioxide (VO2) is one of the longest-standing problems in condensed-matter physics. Ultrafast spectroscopy has long promised to determine whether the transition is primarily driven by the electronic or structural degree of freedom, but measurements to date have been stymied by their sensitivity to only one of these components and/or their limited temporal resolution. Here we use ultra-broadband few-femtosecond pump-probe spectroscopy to resolve the electronic and structural phase transitions in VO2 at their fundamental time scales. We find that the system transforms into a bad-metallic phase within 10 fs after photoexcitation, but requires another 100 fs to complete the transition, during which we observe electronic oscillations and a partial re-opening of the bandgap, signalling a transient semi-metallic state. Comparisons with tensor-network simulations and density-functional theory calculations show these features originate from oscillations around the equilibrium high-symmetry atomic positions during an unprecedentedly fast structural transition, in which the vanadium dimers separate and untwist with two different timescales. Our results resolve the complete structural and electronic nature of the light-induced phase transition in VO2 and establish ultra-broadband few-femtosecond spectroscopy as a powerful new tool for studying quantum materials out of equilibrium.
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Submitted 5 February, 2024; v1 submitted 2 February, 2024;
originally announced February 2024.
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Ruddlesden-Popper chalcogenides push the limit of mechanical stiffness and glass-like thermal conductivity in crystals
Authors:
Md Shafkat Bin Hoque,
Eric R. Hoglund,
Boyang Zhao,
De-Liang Bao,
Hao Zhou,
Sandip Thakur,
Eric Osei-Agyemang,
Khalid Hattar,
Ethan A. Scott,
Mythili Surendran,
John A. Tomko,
John T. Gaskins,
Kiumars Aryana,
Sara Makarem,
Ganesh Balasubramanian,
Ashutosh Giri,
Tianli Feng,
Jordan A. Hachtel,
Jayakanth Ravichandran,
Sokrates T. Pantelides,
Patrick E. Hopkins
Abstract:
Insulating materials featuring ultralow thermal conductivity for diverse applications also require robust mechanical properties. Conventional thinking, however, which correlates strong bonding with high atomic-vibration-mediated heat conduction, led to diverse weakly bonded materials that feature ultralow thermal conductivity and low elastic moduli. One must, therefore, search for strongly-bonded…
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Insulating materials featuring ultralow thermal conductivity for diverse applications also require robust mechanical properties. Conventional thinking, however, which correlates strong bonding with high atomic-vibration-mediated heat conduction, led to diverse weakly bonded materials that feature ultralow thermal conductivity and low elastic moduli. One must, therefore, search for strongly-bonded materials in which heat transport is impeded by other means. Here, we report intrinsic, glass-like, ultralow thermal conductivity and ultrahigh elastic-modulus/thermal-conductivity ratio in single-crystalline, BaZrS3-derived, Ruddlesden-Popper phases Ban+1ZrnS3n+1, n = 2, 3. Their key features are strong anharmonicity and intra-unit-cell rock-salt blocks. The latter produce strongly bonded intrinsic superlattices, impeding heat conduction by broadband reduction of phonon velocities and mean free paths and concomitant strong phonon localization. The present study initiates a paradigm of "mechanically stiff phonon glasses".
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Submitted 5 December, 2023;
originally announced December 2023.
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A first-principles approach to closing the "10-100 eV gap" for charge-carrier thermalization in semiconductors
Authors:
Dallin O. Nielsen,
Chris G. Van de Walle,
Sokrates T. Pantelides,
Ronald D. Schrimpf,
Daniel M. Fleetwood,
Massimo V. Fischetti
Abstract:
The present work is concerned with studying accurately the energy-loss processes that control the thermalization of hot electrons and holes that are generated by high-energy radiation in wurtzite GaN, using an ab initio approach. Current physical models of the nuclear/particle physics community cover thermalization in the high-energy range (kinetic energies exceeding ~100 eV), and the electronic-d…
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The present work is concerned with studying accurately the energy-loss processes that control the thermalization of hot electrons and holes that are generated by high-energy radiation in wurtzite GaN, using an ab initio approach. Current physical models of the nuclear/particle physics community cover thermalization in the high-energy range (kinetic energies exceeding ~100 eV), and the electronic-device community has studied extensively carrier transport in the low-energy range (below ~10 eV). However, the processes that control the energy losses and thermalization of electrons and holes in the intermediate energy range of about 10-100 eV (the "10-100 eV gap") are poorly known. The aim of this research is to close this gap, by utilizing density functional theory (DFT) to obtain the band structure and dielectric function of GaN for energies up to about 100 eV. We also calculate charge-carrier scattering rates for the major charge-carrier interactions (phonon scattering, impact ionization, and plasmon emission), using the DFT results and first-order perturbation theory. With this information, we study the thermalization of electrons starting at 100 eV using the Monte Carlo method to solve the semiclassical Boltzmann transport equation. Full thermalization of electrons and holes is complete within ~1 and 0.5 ps, respectively. Hot electrons dissipate about 90% of their initial kinetic energy to the electron-hole gas (90 eV) during the first ~0.1 fs, due to rapid plasmon emission and impact ionization at high energies. The remaining energy is lost more slowly as phonon emission dominates at lower energies (below ~10 eV). During the thermalization, hot electrons generate pairs with an average energy of ~8.9 eV/pair (11-12 pairs per hot electron). Additionally, during the thermalization, the maximum electron displacement from its original position is found to be on the order of 100 nm.
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Submitted 7 August, 2023;
originally announced August 2023.
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Atomically sharp interface enabled ultrahigh-speed, nonvolatile memory devices
Authors:
Liangmei Wu,
AiWei Wang,
**an Shi,
Jiahao Yan,
Zhang Zhou,
Ce Bian,
Jiajun Ma,
Ruisong Ma,
Hongtao Liu,
Jiancui Chen,
Yuan Huang,
Wu Zhou,
Lihong Bao,
Min Ouyang,
Stephen J. Pennycook,
Sokrates T. Pantelides,
Hong-Jun Gao
Abstract:
Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however current major bottlenecks include low extinction ratio and slow operational speed. Although substantial effort has been employed to improve their performance, a typi…
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Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however current major bottlenecks include low extinction ratio and slow operational speed. Although substantial effort has been employed to improve their performance, a typical hundreds of micro- or even milli- second write time remains a few orders of magnitude longer than their volatile counterparts. We have demonstrated nonvolatile, floating-gate memory devices based on van der Waals heterostructures with atomically sharp interfaces between different functional elements, and achieved ultrahigh-speed programming/erasing operations verging on an ultimate theoretical limit of nanoseconds with extinction ratio up to 10^10. This extraordinary performance has allowed new device capabilities such as multi-bit storage, thus opening up unforeseen applications in the realm of modern nanoelectronics and offering future fabrication guidelines for device scale-up.
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Submitted 23 April, 2021;
originally announced April 2021.
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Spatially and spectrally resolved orbital angular momentum interactions in plasmonic vortex generators
Authors:
Jordan A. Hachtel,
Sang Yeon Cho,
Roderick B. Davidson II,
Matthew F. Chisholm,
Richard F. Haglund,
Juan Carlos Idrobo,
Sokrates T. Pantelides,
Benjamin J. Lawrie
Abstract:
Understanding the near-field electromagnetic interactions that produce optical orbital angular momentum (OAM) is central to the integration of twisted light into nanotechnology. Here, we examine the cathodoluminescence (CL) of plasmonic vortices carrying OAM generated in spiral nanostructures through scanning transmission electron microscopy (STEM). The nanospiral geometry defines the photonic loc…
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Understanding the near-field electromagnetic interactions that produce optical orbital angular momentum (OAM) is central to the integration of twisted light into nanotechnology. Here, we examine the cathodoluminescence (CL) of plasmonic vortices carrying OAM generated in spiral nanostructures through scanning transmission electron microscopy (STEM). The nanospiral geometry defines the photonic local density of states (LDOS) sampled by STEM-CL, which provides access to the phase and amplitude of the plasmonic vortex with nanometer spatial and meV spectral resolution. We map the full spectral dispersion of the plasmonic vortex in the spiral structure and examine the effects of increasing topological charge on the plasmon phase and amplitude in the detected CL signal. The vortex is mapped in CL over a broad spectral range, and deviations between the predicted and detected positions of near-field optical signatures of as much as 5 per cent are observed. Finally, enhanced luminescence is observed from concentric spirals of like handedness compared to that from concentric spirals of opposite handedness, indicating the potential to couple plasmonic vortices to chiral nanostructures for sensitive detection and manipulation of optical OAM.
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Submitted 30 May, 2017;
originally announced May 2017.
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Bonding Configurations and Collective Patterns of Ge Atoms Adsorbed on Si(111)-7x7
Authors:
Y. L. Wang,
H. -J. Gao,
H. M. Guo,
Sanwu Wang,
Sokrates T. Pantelides
Abstract:
We report scanning tunneling microscopy observations of Ge deposited on the Si(111)-7x7 surface for a sequence of sub-monolayer coverages. We demonstrate that Ge atoms replace so-called Si adatoms. Initially, the replacements are random, but distinct patterns emerge and evolve with increasing coverage, till small islands begin to form. Corner adatom sites in the faulted half unit cells are prefe…
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We report scanning tunneling microscopy observations of Ge deposited on the Si(111)-7x7 surface for a sequence of sub-monolayer coverages. We demonstrate that Ge atoms replace so-called Si adatoms. Initially, the replacements are random, but distinct patterns emerge and evolve with increasing coverage, till small islands begin to form. Corner adatom sites in the faulted half unit cells are preferred. First-principles density functional calculations find that adatom substitution competes energetically with a high-coordination bridge site, but atoms occupying the latter sites are highly mobile. Thus, the observed structures are indeed more thermodynamically stable.
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Submitted 14 February, 2005;
originally announced February 2005.
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Dopants adsorbed as single atoms prevent degradation of catalysts
Authors:
Sanwu Wang,
Albina Y. Borisevich,
Sergey N. Rashkeev,
Michael V. Glazoff,
Karl Sohlberg,
Stephen J. Pennycook,
Sokrates T. Pantelides
Abstract:
The design of catalysts with desired chemical and thermal properties is viewed as a grand challenge for scientists and engineers. For operation at high temperatures, stability against structural transformations is a key requirement. Although do** has been found to impede degradation, the lack of atomistic understanding of the pertinent mechanism has hindered optimization. For example, porous g…
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The design of catalysts with desired chemical and thermal properties is viewed as a grand challenge for scientists and engineers. For operation at high temperatures, stability against structural transformations is a key requirement. Although do** has been found to impede degradation, the lack of atomistic understanding of the pertinent mechanism has hindered optimization. For example, porous gamma-Al2O3, a widely used catalyst and catalytic support, transforms to non-porous alpha-Al2O3 at ~1,100C. Do** with La raises the transformation temperature to ~1,250C, but it has not been possible to establish if La atoms enter the bulk, adsorb on surfaces as single atoms or clusters, or form surface compounds. Here, we use direct imaging by aberration-corrected Z-contrast scanning transmission electron microscopy coupled with extended X-ray absorption fine structure and first-principles calculations to demonstrate that, contrary to expectations, stabilization is achieved by isolated La atoms adsorbed on the surface. Strong binding and mutual repulsion of La atoms effectively pin the surface and inhibit both sintering and the transformation to alpha-Al2O3. The results provide the first guidelines for the choice of dopants to prevent thermal degradation of catalysts and other porous materials.
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Submitted 10 July, 2004;
originally announced July 2004.