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Understanding and exploiting interfacial interactions between phosphonic acid functional groups and co-evaporated perovskites
Authors:
Thomas Feeney,
Julian Petry,
Abderrezak Torche,
Dirk Hauschild,
Benjamin Hacene,
Constantin Wansorra,
Alexander Diercks,
Michelle Ernst,
Lothar Weinhardt,
Clemens Heske,
Ganna Grynova,
Ulrich W. Paetzold,
Paul Fassl
Abstract:
Interfacial engineering has fueled recent development of p-i-n perovskite solar cells (PSCs), with self-assembled monolayer-based hole-transport layers (SAM-HTLs) enabling almost lossless contacts for solution-processed PSCs, resulting in the highest achieved power conversion efficiency (PCE) to date. Substrate interfaces are particularly crucial for the growth and quality of co-evaporated PSCs. H…
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Interfacial engineering has fueled recent development of p-i-n perovskite solar cells (PSCs), with self-assembled monolayer-based hole-transport layers (SAM-HTLs) enabling almost lossless contacts for solution-processed PSCs, resulting in the highest achieved power conversion efficiency (PCE) to date. Substrate interfaces are particularly crucial for the growth and quality of co-evaporated PSCs. However, adoption of SAM-HTLs for co-evaporated perovskite absorbers is complicated by the underexplored interaction of such perovskites with phosphonic acid functional groups. In this work, we highlight how exposed phosphonic acid functional groups impact the initial phase and final bulk crystal structures of co-evaporated perovskites and their resultant PCE. The explored surface interaction is mediated by hydrogen bonding with interfacial iodine, leading to increased formamidinium iodide adsorption, persistent changes in perovskite structure, and stabilization of bulk α-FAPbI3, hypothesized as being due to kinetic trap**. Our results highlight the potential of exploiting substrates to increase control of co-evaporated perovskite growth.
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Submitted 28 May, 2024;
originally announced May 2024.
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Surface Saturation Current Densities of Perovskite Thin Films from Suns-Photoluminescence Quantum Yield Measurements
Authors:
Robert Lee Chin,
Arman Mahboubi Soufiani,
Paul Fassl,
Jianghui Zheng,
Eunyoung Choi,
Anita Ho-Baillie,
Ulrich Paetzold,
Thorsten Trupke,
Ziv Hameiri
Abstract:
We present a simple, yet powerful analysis of Suns-photoluminescence quantum yield measurements that can be used to determine the surface saturation current densities of thin film semiconductors. We apply the method to state-of-the-art polycrystalline perovskite thin films of varying absorber thickness. We show that the non-radiative bimolecular recombination in these samples originates from the s…
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We present a simple, yet powerful analysis of Suns-photoluminescence quantum yield measurements that can be used to determine the surface saturation current densities of thin film semiconductors. We apply the method to state-of-the-art polycrystalline perovskite thin films of varying absorber thickness. We show that the non-radiative bimolecular recombination in these samples originates from the surfaces. To the best of our knowledge, this is the first study to demonstrate and quantify non-linear (bimolecular) surface recombination in perovskite thin films.
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Submitted 7 June, 2023;
originally announced June 2023.
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Decoupling Bimolecular Recombination Mechanisms in Perovskite Thin Films Using Photoluminescence Quantum Yield
Authors:
Robert Lee Chin,
Arman Mahboubi Soufiani,
Paul Fassl,
Jianghui Zheng,
Eunyoung Choi,
Anita Ho-Baillie,
Ulrich Paetzold,
Thorsten Trupke,
Ziv Hameiri
Abstract:
We present a novel analytical model for analysing the spectral photoluminescence quantum yield of non-planar semiconductor thin films. This model considers the escape probability of luminescence and is applied to triple-cation perovskite thin films with a 1-Sun photoluminescence quantum yield approaching 25%. By using our model, we can decouple the internal radiative, external radiative, and non-r…
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We present a novel analytical model for analysing the spectral photoluminescence quantum yield of non-planar semiconductor thin films. This model considers the escape probability of luminescence and is applied to triple-cation perovskite thin films with a 1-Sun photoluminescence quantum yield approaching 25%. By using our model, we can decouple the internal radiative, external radiative, and non-radiative bi-molecular recombination coefficients. Unlike other techniques that measure these coefficients separately, our proposed method circumvents experimental uncertainties by avoiding the need for multiple photoluminescence measurement techniques. We validate our model by comparing the extracted implied open-circuit voltage, effective luminescence escape probabilities, absorptivity, and absorption coefficient with values obtained using established methods and found that our results are consistent with previous findings. Next, we compare the implied 1-Sun radiative open-circuit voltage and radiative recombination current obtained from our method with literature values. We then convert the implied open-circuit voltage and implied radiative open-circuit voltage to the injection-dependent apparent-effective and apparent-radiative carrier lifetimes, which allow us to decouple the different recombination coefficients. Using this lifetime analysis, we predict the efficiency losses due to each recombination mechanism. Our proposed analytical model provides a reliable method for analysing the spectral photoluminescence quantum yield of semiconductor thin films, which will facilitate further research into the photovoltaic properties of these materials.
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Submitted 20 June, 2023; v1 submitted 3 June, 2023;
originally announced June 2023.
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The annual energy yield of mono- and bifacial silicon heterojunction solar modules with high-index dielectric nanodisk arrays as anti-reflective and light trap** structures
Authors:
Evgeniia Slivina,
Derk Bätzner,
Raphael Schmager,
Malte Langenhorst,
Jonathan Lehr,
Ulrich W. Paetzold,
Uli Lemmer,
Carsten Rockstuhl
Abstract:
While various nanophotonic structures applicable to relatively thin crystalline silicon-based solar cells were proposed to ensure effective light in-coupling and light trap** in the absorber, it is of great importance to evaluate their performance on the solar module level under realistic irradiation conditions. Here, we analyze the annual energy yield of relatively thin heterojunction (HJT) sol…
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While various nanophotonic structures applicable to relatively thin crystalline silicon-based solar cells were proposed to ensure effective light in-coupling and light trap** in the absorber, it is of great importance to evaluate their performance on the solar module level under realistic irradiation conditions. Here, we analyze the annual energy yield of relatively thin heterojunction (HJT) solar module architectures when optimized anti-reflective and light trap** titanium dioxide (TiO$_2$) nanodisk square arrays are applied on the front and rear cell interfaces. Our numerical study shows that upon reducing crystalline silicon (c-Si) wafer thickness, the relative increase of the annual energy yield can go up to 11.0 %$_\text{rel}$ and 43.0 %$_\text{rel}$ for mono- and bifacial solar modules, respectively, when compared to the reference modules with flat optimized anti-reflective coatings of HJT solar cells.
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Submitted 22 June, 2021;
originally announced June 2021.
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Revealing the internal luminescence quantum efficiency of perovskite films via accurate quantification of photon recycling
Authors:
Paul Fassl,
Vincent Lami,
Felix J. Berger,
Lukas M. Falk,
Jana Zaumseil,
Bryce S. Richards,
Ian A. Howard,
Yana Vaynzof,
Ulrich W. Paetzold
Abstract:
The internal luminescence quantum efficiency ($Q_\mathrm{i}^\mathrm{lum}$) provides an excellent assessment of the optoelectronic quality of semiconductors. To determine $Q_\mathrm{i}^\mathrm{lum}$ of perovskite films from the experimentally accessible external luminescence quantum efficiency ($Q_\mathrm{e}^\mathrm{lum}$) it is essential to account for photon recycling, and this requires knowledge…
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The internal luminescence quantum efficiency ($Q_\mathrm{i}^\mathrm{lum}$) provides an excellent assessment of the optoelectronic quality of semiconductors. To determine $Q_\mathrm{i}^\mathrm{lum}$ of perovskite films from the experimentally accessible external luminescence quantum efficiency ($Q_\mathrm{e}^\mathrm{lum}$) it is essential to account for photon recycling, and this requires knowledge of the photon escape probability ($p_\mathrm{e}$). Here, we establish an analysis procedure based on a curve fitting model that accurately determines $p_\mathrm{e}$ of perovskite films from photoluminescence (PL) spectra measured with a confocal microscope and an integrating sphere setup. We show that scattering-induced outcoupling of initially-trapped PL explains commonly observed red-shifted and broadened PL spectral shapes and leads to $p_\mathrm{e}$ being more than 10% higher in absolute terms compared to earlier assumptions. Applying our model to CH$_3$NH$_3$PbI$_3$ films with exceptionally high $Q_\mathrm{e}^\mathrm{lum}$ up to 47.4% sets a real benchmark for $Q_\mathrm{i}^\mathrm{lum}$ at $78.0 \pm 0.5\%$, revealing there is beyond a factor of two more scope for reducing non-radiative recombination than previously thought.
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Submitted 24 October, 2020;
originally announced October 2020.
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Rigorous Treatment of Photon Recycling in Thermodynamics of Photovoltaics: The Case of Perovskite Thin-Film Solar Cells
Authors:
Muluneh G. Abebe,
Aimi Abass,
Guillaume Gomard,
Lin Zschiedrich,
Uli Lemmer,
Bryce S. Richards,
Carsten Rockstuhl,
Ulrich W. Paetzold
Abstract:
The establishment of a rigorous theory on thermodynamics of light management in photovoltaics that accommodates various loss mechanisms as well as wave-optical effects in the absorption and reemission of light is at stake in this contribution. To this end, we propose a theoretical framework to calculate the open-circuit voltage enhancement resulting from photon recycling (…
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The establishment of a rigorous theory on thermodynamics of light management in photovoltaics that accommodates various loss mechanisms as well as wave-optical effects in the absorption and reemission of light is at stake in this contribution. To this end, we propose a theoretical framework to calculate the open-circuit voltage enhancement resulting from photon recycling ($ΔV^{\mathrm{PR}}_{\mathrm{oc}}$) with rigorous wave-optical treatment. It can be applied to both planar thin-film and nanostructured single-junction solar cells. We derive an explicit expression for $ΔV^{\mathrm{PR}}_{\mathrm{oc}}$, which reveals its dependence on internal quantum luminescence efficiency, parasitic reabsorption, and on photon escape probabilities of reemmited photons. While the internal quantum luminescence efficiency is an intrinsic material property, both latter quantities can be determined rigorously for an arbitrary solar cell architecture by three-dimensional electrodynamic dipole emission calculations. We demonstrate the strengths and validity of our framework by determining the impact of photon recycling on the $V_{\mathrm{oc}}$ of a conventional planar organo-metal halide perovskite thin-film solar cell and compare it to established reference cases with perfect antireflection and Lambertian light scattering. Our calculations reveal $ΔV^{\mathrm{PR}}_{\mathrm{oc}}$ values of up to 80 mV for the considered device stack in the absence of angular restriction and up to 240 mV when the escape cone above the cell is restricted to $θ_{\mathrm{out}}=2.5^\circ$ around the cell normal. These improvements impose severe constraints on the parasitic absorption as a parasitic reabsorption probability of only 2\% reduces the $ΔV^{\mathrm{PR}}_{\mathrm{oc}}$ to 100 mV for the same angular restriction. Our work here can be used to provide design guidelines.
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Submitted 4 September, 2018; v1 submitted 6 April, 2018;
originally announced April 2018.
