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Nonlinear exciton-Mie coupling in transition metal dichalcogenides nanoresonators
Authors:
Ilya M. Antropov,
Anna A. Popkova,
Gleb I. Tselikov,
Georgy A. Ermolaev,
Igor Ozerov,
Federic Bedu,
Roman V. Kirtaev,
Sergey M. Novikov,
Andrey B. Evlyukhin,
Aleksey V. Arsenin,
Vladimir O. Bessonov,
Valentyn S. Volkov,
Andrey A. Fedyanin
Abstract:
Molybdenum disulfide (MoS2) is a layered material of transition metal dichalcogenides (TMDCs) with a high refractive index in the visible and infrared spectral range. Therefore, by constructing MoS2 into dielectric nanoresonators, one can generate highly confined electromagnetic Mie-type modes. In this work, we applied lithography and etching techniques to single crystal MoS2 flakes to fabricate n…
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Molybdenum disulfide (MoS2) is a layered material of transition metal dichalcogenides (TMDCs) with a high refractive index in the visible and infrared spectral range. Therefore, by constructing MoS2 into dielectric nanoresonators, one can generate highly confined electromagnetic Mie-type modes. In this work, we applied lithography and etching techniques to single crystal MoS2 flakes to fabricate nanodisks that support magnetic dipole Mie resonances in near infrared spectral range. The nanodisks were studied by second-harmonic generation (SHG) rotational anisotropy revealing the retention of crystallinity and the orientation of the crystallographic axes of the single disk structure after fabrication. Magnetic dipole resonances manifest as resonant intensity enhancement in SHG spectra. Tuning Mie resonances by selecting the geometrical size of MoS2 nanodisks, we demonstrated strongly enhanced SHG due to the overlap of the optical resonance at the fundamental wavelength with the C-exciton resonance at the second-harmonic wavelength.
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Submitted 3 December, 2021; v1 submitted 11 May, 2021;
originally announced May 2021.
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High Aspect Ratio Sub-Micrometer Channels Using Wet Etching: Application to the Dynamics of Red Blood Cell Transiting through Biomimetic Splenic Slits
Authors:
Priya Gambhire,
Scott Atwell,
Cécile Iss,
Frédéric Bedu,
Igor Ozerov,
Catherine Badens,
Emmanuèle Helfer,
Annie Viallat,
Anne Charrier
Abstract:
Nanoparticles delivering drugs, disseminating cancer cells, and red blood cells (RBCs) during splenic filtration must deform and pass through the sub-micrometer and high aspect ratio interstices between the endothelial cells lining blood vessels. The dynamics of passage of particles/cells through these slit-like interstices remain poorly understood because the in vitro reproduction of slits with p…
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Nanoparticles delivering drugs, disseminating cancer cells, and red blood cells (RBCs) during splenic filtration must deform and pass through the sub-micrometer and high aspect ratio interstices between the endothelial cells lining blood vessels. The dynamics of passage of particles/cells through these slit-like interstices remain poorly understood because the in vitro reproduction of slits with physiological dimensions in devices compatible with optical microscopy observations requires expensive technologies. Here, novel microfluidic PDMS devices containing high aspect ratio slits with sub-micrometer width are molded on silicon masters using a simple, inexpensive, and highly flexible method combining standard UV lithography and anisotropic wet etching. These devices enabled revealing novel modes of deformations of healthy and diseased RBCs squeezing through splenic-like slits (0.6--2 um 5--10 um 1.6--11 $μ$m3) under physiological interstitial pressures. At the slit exit, the cytoskeleton of spherocytic RBCs seemed to be detached from the lipid membrane whereas RBCs from healthy donors and patients with sickle cell disease exhibited peculiar tips at their front. These tips disappeared much slower in patients' cells, allowing estimating a threefold increase in RBC cytoplasmic viscosity in sickle cell disease. Measurements of time and rate of RBC sequestration in the slits allowed quantifying the massive trap** of spherocytic RBCs.
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Submitted 27 February, 2018;
originally announced February 2018.
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Spin- and orbital-Hall effect in cyclic group symmetric metasurface
Authors:
Yeon Ui Lee,
Igor Ozerov,
Frederic Bedu,
Ji Su Kim,
Frederic Fages,
Jeong Weon Wu
Abstract:
Light possesses both spin and orbital angular momentum (AM). While spin AM is determined by helicity of circular-polarization, orbital AM is characterized by topological charge of vortex beam. Interaction of AM with optical beam orbit leads to optical spin Hall or orbital Hall effect, exhibited as spin-dependent or topological charge-dependent transverse shift of optical beam. Conservation of AM e…
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Light possesses both spin and orbital angular momentum (AM). While spin AM is determined by helicity of circular-polarization, orbital AM is characterized by topological charge of vortex beam. Interaction of AM with optical beam orbit leads to optical spin Hall or orbital Hall effect, exhibited as spin-dependent or topological charge-dependent transverse shift of optical beam. Conservation of AM enables spin-to-orbital AM conversion, where circular-polarized Gaussian beam is converted to opposite-helicity circular-polarized vortex beam with topological charge $\pm 2$, an example of controlling spatial beam profiling by spin flip. However, the resultant vortex beam has the beam center of gravity unchanged, the same as that of incident Gaussian beam, meaning a null transverse shift. Here we introduce a cyclic group symmetric metasurface to demonstrate generation of vortex beam exhibiting spin-dependent transverse shift, namely, spin- and orbital-Hall effect, attributed to an alteration of dynamical phase of scattered beam according to the order $n$ of cyclic group while kee** geometric phase constant. Capability of spin-controlled spatial beam profiling with a transverse shift via spin- and orbital-Hall effect has important implications for spatial demultiplexing in optical communication utilizing orbital AM mode division multiplexing as well as for optical vortex tweezer and signal processing involving vortex beams.
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Submitted 17 August, 2016; v1 submitted 16 July, 2016;
originally announced July 2016.
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Enhancement and Inhibition of Spontaneous Photon Emission by Resonant Silicon Nanoantennas
Authors:
Dorian Bouchet,
Mathieu Mivelle,
Julien Proust,
Bruno Gallas,
Igor Ozerov,
Maria F. Garcia-Parajo,
Angelo Gulinatti,
Ivan Rech,
Yannick De Wilde,
Nicolas Bonod,
Valentina Krachmalnicoff,
Sébastien Bidault
Abstract:
Substituting noble metals for high-index dielectrics has recently been proposed as an alternative strategy in nanophotonics to design broadband optical resonators and circumvent the ohmic losses of plasmonic materials. In this report, we demonstrate that subwavelength silicon nanoantennas can manipulate the photon emission dynamics of fluorescent molecules. In practice, it is showed that dielectri…
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Substituting noble metals for high-index dielectrics has recently been proposed as an alternative strategy in nanophotonics to design broadband optical resonators and circumvent the ohmic losses of plasmonic materials. In this report, we demonstrate that subwavelength silicon nanoantennas can manipulate the photon emission dynamics of fluorescent molecules. In practice, it is showed that dielectric nanoantennas can both increase and decrease the local density of optical states (LDOS) at room temperature, a process that is inaccessible with noble metals at the nanoscale. Using scanning probe microscopy, we analyze quantitatively, in three dimensions, the near-field interaction between a 100 nm fluorescent nanosphere and silicon nanoantennas with diameters ranging between 170 nm and 250 nm. Associated to numerical simulations, these measurements indicate increased or decreased total spontaneous decay rates by up to 15 % and a gain in the collection efficiency of emitted photons by up to 85 %. Our study demonstrates the potential of silicon-based nanoantennas for the low-loss manipulation of solid-state emitters at the nanoscale and at room temperature.
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Submitted 30 December, 2016; v1 submitted 10 May, 2016;
originally announced May 2016.
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Multiple Cell Upset Cross-Section Uncertainty in Nanoscale Memories: Microdosimetric Approach
Authors:
G. I. Zebrev,
K. S. Zemtsov,
R. G. Useinov,
M. S. Gorbunov,
V. V. Emeliyanov,
A. I. Ozerov
Abstract:
We found that the energy deposition fluctuations in the sensitive volumes may cause multiplicity scatters in the multiple cell upsets in the nanoscale (with feature sizes less than 100 nm) memories.
We found that the energy deposition fluctuations in the sensitive volumes may cause multiplicity scatters in the multiple cell upsets in the nanoscale (with feature sizes less than 100 nm) memories.
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Submitted 17 April, 2015;
originally announced April 2015.
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Production of Gas Phase Zinc Oxide Nanoclusters by Pulsed Laser Ablation
Authors:
Igor Ozerov,
Alexander V. Bulgakov,
Dmitry K. Nelson,
Ricardo Castell,
Wladimir Marine
Abstract:
We present experimental results on the photoluminescence (PL) of gas-suspended zinc oxide nanoclusters prepared during ablation of sintered ZnO targets by a pulsed ArF laser in the presence of oxygen ambient gas. The PL spectra in the UV spectral region correspond to the exciton recombination in the nanoclusters which are crystallized and cooled down to the temperature of the ambient gas in the…
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We present experimental results on the photoluminescence (PL) of gas-suspended zinc oxide nanoclusters prepared during ablation of sintered ZnO targets by a pulsed ArF laser in the presence of oxygen ambient gas. The PL spectra in the UV spectral region correspond to the exciton recombination in the nanoclusters which are crystallized and cooled down to the temperature of the ambient gas in the ablation chamber. The time evolution of the spectra as well as their dependence on the ambient gas pressure are discussed.
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Submitted 10 June, 2004;
originally announced June 2004.
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Phosphorus cluster production by laser ablation
Authors:
A. V. Bulgakov,
O. F. Bobrenok,
Igor Ozerov,
W. Marine,
S. Giorgio,
A. Lassesson,
E. E. B. Campbell
Abstract:
Neutral and charged phosphorus clusters of a wide size range have been produced by pulsed laser ablation (PLA) in vacuum at 532, 337, and 193 nm ablating wavelengths and investigated by time-of-flight mass spectrometry. The neutral P_n clusters are even-numbered with local abundance maxima at n = 10 and 14, while the cationic and anionic clusters are preferentially odd-numbered with (P_7)+, (P_2…
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Neutral and charged phosphorus clusters of a wide size range have been produced by pulsed laser ablation (PLA) in vacuum at 532, 337, and 193 nm ablating wavelengths and investigated by time-of-flight mass spectrometry. The neutral P_n clusters are even-numbered with local abundance maxima at n = 10 and 14, while the cationic and anionic clusters are preferentially odd-numbered with (P_7)+, (P_21)+, and (P_17)- being the most abundant ions. The dominance of the magic clusters is more pronounced at 337-nm ablation that is explained by efficient direct ejection of their building blocks under these conditions. Nanocrystalline phosphorus films have been produced by PLA in ambient helium gas.
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Submitted 5 April, 2004;
originally announced April 2004.
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Silicon clusters produced by femtosecond laser ablation: Non-thermal emission and gas-phase condensation
Authors:
Alexander V. Bulgakov,
Igor Ozerov,
Wladimir Marine
Abstract:
Neutral silicon clusters Si_n (up to n = 7) and their cations Si_n+ (up to n = 10) have been produced by femtosecond laser ablation of bulk silicon in vacuum and investigated using time-of-flight mass spectrometry. Two populations of the Si_n+ clusters with different velocity and abundance distributions in the ablation plume have been clearly distinguished. Possible mechanisms of cluster formati…
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Neutral silicon clusters Si_n (up to n = 7) and their cations Si_n+ (up to n = 10) have been produced by femtosecond laser ablation of bulk silicon in vacuum and investigated using time-of-flight mass spectrometry. Two populations of the Si_n+ clusters with different velocity and abundance distributions in the ablation plume have been clearly distinguished. Possible mechanisms of cluster formation (Coulomb explosion, gas-phase condensation, phase explosion) are discussed.
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Submitted 10 March, 2004;
originally announced March 2004.
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Electronic mechanism of ion expulsion under UV nanosecond laser excitation of silicon: Experiment and modeling
Authors:
Wladimir Marine,
Nadezhda M. Bulgakova,
Lionel Patrone,
Igor Ozerov
Abstract:
We present experimental and modeling studies of UV nanosecond pulsed laser desorption and ablation of (111) bulk silicon. The results involve a new approach to the analysis of plume formation dynamics under high-energy photon irradiation of the semiconductor surface. Non-thermal, photo-induced desorption has been observed at low laser fluence, well below the melting threshold. Under ablation con…
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We present experimental and modeling studies of UV nanosecond pulsed laser desorption and ablation of (111) bulk silicon. The results involve a new approach to the analysis of plume formation dynamics under high-energy photon irradiation of the semiconductor surface. Non-thermal, photo-induced desorption has been observed at low laser fluence, well below the melting threshold. Under ablation conditions, the non-thermal ions have also a high concentration. The origin of these ions is discussed on the basis of electronic excitation of Si surface states associated with the Coulomb explosion mechanism. We present a model describing dynamics of silicon target excitation, heating and harge-carrier transport.
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Submitted 14 March, 2004; v1 submitted 12 March, 2004;
originally announced March 2004.
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Laser ablation synthesis of zinc oxide clusters: a new family of fullerenes?
Authors:
Alexander V. Bulgakov,
Igor Ozerov,
Wladimir Marine
Abstract:
Positively charged zinc oxide clusters ZnnOm (up to n = 16, m <= n) of various stoichiometry were synthesized in the gas phase by excimer ArF laser ablation of a ZnO target and investigated using time-of-flight mass spectrometry. Depending on ablation conditions, either metal rich or stoichiometric clusters dominate in the mass spectrum. When the irradiated target surface is fairly fresh, the mo…
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Positively charged zinc oxide clusters ZnnOm (up to n = 16, m <= n) of various stoichiometry were synthesized in the gas phase by excimer ArF laser ablation of a ZnO target and investigated using time-of-flight mass spectrometry. Depending on ablation conditions, either metal rich or stoichiometric clusters dominate in the mass spectrum. When the irradiated target surface is fairly fresh, the most abundant clusters are metal rich with Zn(n+1)On and Zn(n+3)On being the major series. The stoichiometric clusters are observed with an etched ablated surface. The magic numbers at n = 9, 11 and 15 in mass spectra of (ZnO)n clusters indicate that the clusters have hollow spheroid structures related to fullerenes. A local abundance minimum at n = 13 provides an additional evidence for the presence in the ablation plume of fullerene-like (ZnO)n clusters.
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Submitted 24 November, 2003;
originally announced November 2003.
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Cluster emission under femtosecond laser ablation of silicon
Authors:
Alexander V. Bulgakov,
Igor Ozerov,
Wladimir Marine
Abstract:
Rich populations of clusters have been observed after femtosecond laser ablation of bulk silicon in vacuum. Size and velocity distributions of the clusters as well as their charge states have been analyzed by reflectron time-of-flight mass spectrometry. An efficient emission of both neutral silicon clusters Sin (up to n = 6) and their cations Sin+ (up to n = 10) has been observed. The clusters a…
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Rich populations of clusters have been observed after femtosecond laser ablation of bulk silicon in vacuum. Size and velocity distributions of the clusters as well as their charge states have been analyzed by reflectron time-of-flight mass spectrometry. An efficient emission of both neutral silicon clusters Sin (up to n = 6) and their cations Sin+ (up to n = 10) has been observed. The clusters are formed even at very low laser fluences, below ablation threshold, and their relative yield increases with fluence. We show the dependencies of the cluster yield as well as the expansion dynamics on both laser wavelength and laser fluence. The mechanisms of the cluster formation are discussed.
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Submitted 10 March, 2004; v1 submitted 24 November, 2003;
originally announced November 2003.
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Ablation de ZnO par laser UV (193 nm) : Nano-agregats en phase gazeuse
Authors:
Igor Ozerov,
Alexander V. Bulgakov,
Dimitri N. Nelson,
Ricardo Castell,
Marc Sentis,
Wladimir Marine
Abstract:
The condensation of zinc oxide nano clusters produced in gas phase has been evidenced in the ablation of a ZnO solid target by a pulsed ArF laser. We compare the spatio-temporal evolution of the shape of ZnO ablated plasma plume, both in vacuum and in controlled gas environments (Helium and/or Oxygen) from monitoring with CCD camera and from spectroscopic studies. The expansion of the plasma plu…
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The condensation of zinc oxide nano clusters produced in gas phase has been evidenced in the ablation of a ZnO solid target by a pulsed ArF laser. We compare the spatio-temporal evolution of the shape of ZnO ablated plasma plume, both in vacuum and in controlled gas environments (Helium and/or Oxygen) from monitoring with CCD camera and from spectroscopic studies. The expansion of the plasma plume and the growth of the nanoclusters depend strongly upon the collisions between the ablated particles and surrounding gas molecules, as well as on the chemical reactions in the case of oxygen. The spectra of the observed plasma emittion are mainly due to atomic transitions in the neutral Zn. We have also observed the photoluminescence of the nanoclusters suspended in the gas and their decomposition in the beam of ArF laser.
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Submitted 13 November, 2003;
originally announced November 2003.
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Synthesis and Laser Processing of ZnO Nanocrystalline Thin Films
Authors:
Igor Ozerov,
Dimitri Nelson,
Alexander V. Bulgakov,
Wladimir Marine,
Marc Sentis
Abstract:
We present the results of experiments on synthesis of ZnO nanoclusters by reactive pulsed laser deposition (PLD). The nanoclusters were formed and crystallized in the gas phase and deposited on SiO2 substrates. The nanostructured films were characterized by conventional photoluminescence (PL). The PL spectra consist of a narrow UV excitonic band and a broad visible band related to defects in the…
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We present the results of experiments on synthesis of ZnO nanoclusters by reactive pulsed laser deposition (PLD). The nanoclusters were formed and crystallized in the gas phase and deposited on SiO2 substrates. The nanostructured films were characterized by conventional photoluminescence (PL). The PL spectra consist of a narrow UV excitonic band and a broad visible band related to defects in the film. The film preparation conditions such as the substrate temperature, ambient gas nature and pressure, were optimized in order to increase the intensity of excitonic emission and prevent the formation of defects. A post-growth annealing by UV laser radiation improved the optical quality of the deposited films. The photoluminescence intensity was found to be dependent significantly on the laser fluence and on the number of shots per site. The nature of the defects responsible for the observed luminescence in a visible range is discussed.
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Submitted 13 November, 2003;
originally announced November 2003.