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Tunable MEMS VCSEL on Silicon substrate
Authors:
Hitesh Kumar Sahoo,
Thor Ansbæk,
Luisa Ottaviano,
Elizaveta Semenova,
Fyodor Zubov,
Ole Hansen,
Kresten Yvind
Abstract:
We present design, fabrication and characterization of a MEMS VCSEL which utilizes a silicon-on-insulator wafer for the microelectromechanical system and encapsulates the MEMS by direct InP wafer bonding, which improves the protection and control of the tuning element. This procedure enables a more robust fabrication, a larger free spectral range and facilitates bidirectional tuning of the MEMS el…
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We present design, fabrication and characterization of a MEMS VCSEL which utilizes a silicon-on-insulator wafer for the microelectromechanical system and encapsulates the MEMS by direct InP wafer bonding, which improves the protection and control of the tuning element. This procedure enables a more robust fabrication, a larger free spectral range and facilitates bidirectional tuning of the MEMS element. The MEMS VCSEL device uses a high contrast grating mirror on a MEMS stage as the bottom mirror, a wafer bonded InP with quantum wells for amplification and a deposited dielectric DBR as the top mirror. A 40 nm tuning range and a mechanical resonance frequency in excess of 2 MHz are demonstrated.
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Submitted 20 March, 2019;
originally announced March 2019.
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Comparison of processing-induced deformations of InP bonded to Si determined by e-beam metrology: direct vs. adhesive bonding
Authors:
Aurimas Sakanas,
Elizaveta Semenova,
Luisa Ottaviano,
Jesper Mørk,
Kresten Yvind
Abstract:
In this paper, we employ an electron beam writer as metrology tool to investigate distortion of an exposed pattern of alignment marks in heterogeneously bonded InP on silicon. After experimental study of three different bonding and processing configurations which represent typical on-chip photonic device fabrication conditions, the smallest degree of linearly-corrected distortion errors is obtaine…
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In this paper, we employ an electron beam writer as metrology tool to investigate distortion of an exposed pattern of alignment marks in heterogeneously bonded InP on silicon. After experimental study of three different bonding and processing configurations which represent typical on-chip photonic device fabrication conditions, the smallest degree of linearly-corrected distortion errors is obtained for the directly bonded wafer, with the alignment marks both formed and measured on the same InP layer side after bonding (equivalent to single-sided processing of the bonded layer). Under these conditions, multilayer exposure alignment accuracy is limited by the InP layer deformation after the initial pattern exposure mainly due to the mechanical wafer clam** in the e-beam cassette. Bonding-induced InP layer deformations dominate in cases of direct and BCB bonding when the alignment marks are formed on one InP wafer side, and measured after bonding and substrate removal from another (equivalent to double-sided processing of the bonded layer). The findings of this paper provide valuable insight into the origin of the multilayer exposure misalignment errors for the bonded III-V on Si wafers, and identify important measures that need to be taken to optimize the fabrication procedures for demonstration of efficient and high-performance on-chip photonic integrated devices.
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Submitted 3 December, 2018; v1 submitted 21 August, 2018;
originally announced August 2018.
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Role of substrate on interaction of water molecules with graphene oxide and reduced graphene oxide
Authors:
Roman Strzelczyk,
Cristina E. Giusca,
Francesco Perrozzi,
Giulia Fioravanti,
Luca Ottaviano,
Olga Kazakova
Abstract:
We study local electronic properties of graphene oxide (GO) and reduced graphene oxide (RGO) on metallic (Pt) and insulating (Si3N4) substrates in controlled humidity environment. We demonstrate that the supporting substrate plays a crucial role in interaction of these materials with water, with Pt making both GO and RGO insensitive to humidity variations and change in environment. On the other ha…
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We study local electronic properties of graphene oxide (GO) and reduced graphene oxide (RGO) on metallic (Pt) and insulating (Si3N4) substrates in controlled humidity environment. We demonstrate that the supporting substrate plays a crucial role in interaction of these materials with water, with Pt making both GO and RGO insensitive to humidity variations and change in environment. On the other hand, in the case of Si3N4 substrate a significant difference between GO and RGO with respect to humidity variations is demonstrated, indicating complete water coverage at ~60% R.H for RGO and ~30% R.H. for GO. Irrespective of the substrate, both GO and RGO demonstrate relative independence of their electronic properties on the material thickness, with similar trends observed for 1, 2 and 3 layers when subject to humidity variations. This indicates a relatively minor role of material thickness in GO-based humidity sensors.
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Submitted 26 April, 2018;
originally announced April 2018.
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AlGaAs-On-Insulator Nonlinear Photonics
Authors:
Minhao Pu,
Luisa Ottaviano,
Elizaveta Semenova,
Kresten Yvind
Abstract:
The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing, on-chip multi-wavelength lasers, metrology, molecular spectroscopy, and quantum information science. Aluminium gallium…
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The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing, on-chip multi-wavelength lasers, metrology, molecular spectroscopy, and quantum information science. Aluminium gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss when operated below half its bandgap energy. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths. Using newly developed fabrication processes, we show high-quality-factor (Q>100,000) micro-resonators with integrated bus waveguides in a planar circuit where optical parametric oscillation is achieved with a record low threshold power of 3 mW and a frequency comb spanning 350 nm is obtained. Our demonstration shows the huge potential of the AlGaAs-on-insulator platform in integrated nonlinear photonics.
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Submitted 11 September, 2015;
originally announced September 2015.
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Threshold Characteristics of Slow-Light Photonic Crystal Lasers
Authors:
Weiqi Xue,
Yi Yu,
Luisa Ottaviano,
Yaohui Chen,
Elizaveta Semenova,
Kresten Yvind,
Jesper Mork
Abstract:
The threshold properties of photonic crystal quantum dot lasers operating in the slow-light regime are investigated experimentally and theoretically. Measurements show that, in contrast to conventional lasers, the threshold gain attains a minimum value for a specific cavity length. The experimental results are explained by an analytical theory for the laser threshold that takes into account the ef…
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The threshold properties of photonic crystal quantum dot lasers operating in the slow-light regime are investigated experimentally and theoretically. Measurements show that, in contrast to conventional lasers, the threshold gain attains a minimum value for a specific cavity length. The experimental results are explained by an analytical theory for the laser threshold that takes into account the effects of slow-light and random disorder due to unavoidable fabrication imperfections. Longer lasers are found to operate deeper into the slow-light region, leading to a trade-off between slow-light induced reduction of the mirror loss and slow-light enhancement of disorder-induced losses.
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Submitted 21 August, 2015;
originally announced August 2015.
