-
Micromechanical field-effect transistor terahertz detectors with optical interferometric readout
Authors:
V. Ryzhii,
C. Tang,
T. Otsuji,
M. Ryzhii,
S. G. Kalenkov,
V. Mitin,
M. S. Shur
Abstract:
We investigate the response of the micromechanical field-effect transistors (MMFETs) to the im**ing terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson optical interferometer. The MC mechanical oscillations are transformed into optical signals and the MMFET operates as the detector of THz radiation with the optic…
▽ More
We investigate the response of the micromechanical field-effect transistors (MMFETs) to the im**ing terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson optical interferometer. The MC mechanical oscillations are transformed into optical signals and the MMFET operates as the detector of THz radiation with the optical output. The combination of the mechanical and plasmonic resonances in the MMFET with the optical amplification enables an effective THz detection.
△ Less
Submitted 23 June, 2023;
originally announced June 2023.
-
Fast and Sensitive Terahertz Detection in a Current-Driven Epitaxial-Graphene Asymmetric Dual-Grating-Gate FET Structure
Authors:
Koichi Tamura,
Chao Tang,
Daichi Ogiura,
Kento Suwa,
Hirokazu Fukidome,
Yuma Takida,
Hiroaki Minamide,
Tetsuya Suemitsu,
Taiichi Otsuji,
Akira Satou
Abstract:
We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven terahertz detector, and experimentally demonstrated a 10-ps order fast response time and a high responsivity of 0.3 mA/W to the 0.95-THz radiation incidence at room temperatures. The ADGG- and the drain-source-bias depe…
▽ More
We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven terahertz detector, and experimentally demonstrated a 10-ps order fast response time and a high responsivity of 0.3 mA/W to the 0.95-THz radiation incidence at room temperatures. The ADGG- and the drain-source-bias dependencies of the measured photoresponse showed a clear transition between plasmonic detection under periodic electron density modulation conditions with depleted regions and photothermoelectric detection under highly doped conditions without depleted regions. We identified the photothermoelectric detection that we observed as a new type of unipolar mechanism in which only electrons or holes contribute to rectifying the THz radiation under current-driven conditions. These two detection mechanisms coexist in a certain wide transcendent range of the applied bias voltages. It was also clearly manifested that the temporal photoresponse of the plasmonic and photothermoelectric detection are comparably fast on the order of 10 ps, whereas the maximal photoresponsivity of the photothermoelectric detection is almost twice as high as that of the plasmonic detection under the applied biases conditions. These results suggest that the ADGG-EG-FET THz detector will be promising for use in 6G- and 7G-class high-speed wireless communication systems.
△ Less
Submitted 3 July, 2022; v1 submitted 30 June, 2022;
originally announced July 2022.
-
Room Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures
Authors:
Stephane Boubanga-Tombet,
Wojciech Knap,
Deepika Yadav,
Akira Satou,
Dmytro B. But,
Vyacheslav V. Popov,
Ilya V. Gorbenko,
Valentin Kachorovskii,
Taiichi Otsuji
Abstract:
We report on experimental studies of terahertz (THz) radiation transmission through grating-gate graphene-channel transistor nanostructures and demonstrate room temperature THz radiation amplification stimulated by current-driven plasmon excitations. Specifically, with increase of the direct current (dc) under periodic charge density modulation, we observe a strong red shift of the resonant THz pl…
▽ More
We report on experimental studies of terahertz (THz) radiation transmission through grating-gate graphene-channel transistor nanostructures and demonstrate room temperature THz radiation amplification stimulated by current-driven plasmon excitations. Specifically, with increase of the direct current (dc) under periodic charge density modulation, we observe a strong red shift of the resonant THz plasmon absorption, its complete bleaching, followed by the amplification and blue shift of the resonant plasmon frequency. Our results are, to the best of our knowledge, the first experimental observation of energy transfer from dc current to plasmons leading to THz amplification. We present a simple model allowing for the phenomenological description of the observed amplification phenomena. This model shows that in the presence of dc current the radiation-induced correction to dissipation is sensitive to the phase shift between THz oscillations of carrier density and drift velocity, and with increase of the current becomes negative, leading to amplification. The experimental results of this work as all obtained at room temperature, pave the way towards the new 2D plasmons based, voltage tuneable THz radiation amplifiers.
△ Less
Submitted 11 June, 2020; v1 submitted 21 March, 2020;
originally announced March 2020.
-
Plasmonic instabilities and terahertz waves amplification in graphene metamaterials
Authors:
Stephane Boubanga-Tombet,
Deepika Yadav,
Wojciech Knap,
Vyacheslav V. Popov,
Taichii Otsuji
Abstract:
Plasmon oscillations have been intensively studied for more than forty years in conventional two-dimensional electron gas systems in order to find new alternatives to the vacuum devices based on the Smith-Purcell effect in the far-infrared region. However, beside the multiple endeavors, up to date, the plasmon generation in semiconductor heterostructures has been very inefficient. Here we demonstr…
▽ More
Plasmon oscillations have been intensively studied for more than forty years in conventional two-dimensional electron gas systems in order to find new alternatives to the vacuum devices based on the Smith-Purcell effect in the far-infrared region. However, beside the multiple endeavors, up to date, the plasmon generation in semiconductor heterostructures has been very inefficient. Here we demonstrate that the use of high mobility graphene metamaterials, due to their well-known stronger light-plasmon coupling compared to semiconductor materials can significantly improve the efficiency of far-infrared plasmonic amplifiers and generators. We explore current-driven plasmon dynamics including perfect transparency and light amplification in monolayer graphene structures. Current-induced complete suppression of the graphene absorption is experimentally observed in a broad frequency range followed by a giant amplification (up to about 9 % gain) of an incoming terahertz radiation at room temperature. These active plasmonic processes are triggered by relatively low bias voltage in the graphene devices leading to external quantum efficiency of about two orders of magnitude higher than those of the popular optical-to-terahertz conversion devices largely used in far-infrared technologies. Our results combined with the relatively low level of losses and high degree of spatial confinement of plasmons in graphene will open pathways for a wide range of integrated high speed active optoelectronics devices.
△ Less
Submitted 14 January, 2018;
originally announced January 2018.
-
Effect of do** on the characteristics of infrared photodetectors based on van der Waals~heterostructures with multiple graphene layers
Authors:
V. Ryzhii,
M. Ryzhii,
V. Leiman,
V. Mitin,
M. S. Shur,
T. Otsuji
Abstract:
We study the operation of infrared photodetectors based on van der Waals heterostructures with the multiple graphene layers (GLs) and n-type emitter and collector contacts. The operation of such GL infrared photodetectors (GLIPs) is associated with the photoassisted escape of electrons from the GLs into the continuum states in the conduction band of the barrier layers due to the interband photon a…
▽ More
We study the operation of infrared photodetectors based on van der Waals heterostructures with the multiple graphene layers (GLs) and n-type emitter and collector contacts. The operation of such GL infrared photodetectors (GLIPs) is associated with the photoassisted escape of electrons from the GLs into the continuum states in the conduction band of the barrier layers due to the interband photon absorption, the propagation of these electrons and the electrons injected from the emitter across the heterostructure and their collection by the collector contact. The space charge of the holes trapped in the GLs provides a relatively strong injection and large photoelectric gain. We calculate the GLIP responsivity and dark current detectivity as functions of the energy of incident infrared photons and the structural parameters. It is shown that both the periodic selective do** of the inter-GL barrier layers and the GL do** lead to a pronounced variation of the GLIP spectral characteristics, particularly near the interband absorption threshold, while the do** of GLs solely results in a substantial increase in the GLIP detectivity. The do** "engineering" opens wide opportunities for the optimization of GLIPs for operation in different parts of radiation spectrum from near infrared to terahertz.
△ Less
Submitted 13 May, 2017;
originally announced May 2017.
-
Ultra-compact injection terahertz laser using the resonant inter-layer radiative transitions in multi-graphene-layer structure
Authors:
Alexander A. Dubinov,
Andrey Bylinkin,
Vladimir Ya. Aleshkin,
Victor Ryzhii,
Taiichi Otsuji,
Dmitry Svintsov
Abstract:
The optimization of laser resonators represents a crucial issue for the design of terahertz semiconductor lasers with high gain and low absorption loss. In this paper, we put forward and optimize the surface plasmonic metal waveguide geometry for the recently proposed terahertz injection laser based on resonant radiative transitions between tunnel-coupled grapheme layers. We find an optimal number…
▽ More
The optimization of laser resonators represents a crucial issue for the design of terahertz semiconductor lasers with high gain and low absorption loss. In this paper, we put forward and optimize the surface plasmonic metal waveguide geometry for the recently proposed terahertz injection laser based on resonant radiative transitions between tunnel-coupled grapheme layers. We find an optimal number of active graphene layer pairs corresponding to the maximum net modal gain. The maximum gain increases with frequency and can be as large as ~ 500 cm-1 at 8 THz, while the threshold length of laser resonator can be as small as ~ 50 mkm. Our findings substantiate the possibility of ultra-compact voltage-tunable graphene-based lasers operating at room temperature.
△ Less
Submitted 29 November, 2016;
originally announced November 2016.
-
Voltage-controlled surface plasmon-polaritons in double graphene layer structures
Authors:
D. Svintsov,
V. Vyurkov,
V. Ryzhii,
T. Otsuji
Abstract:
We study the spectra and dam** of surface plasmon-polaritons in double graphene layer structures. It is shown that application of bias voltage between layers shifts the edge of plasmon absorption associated with the interband transitions. This effect could be used in efficient plasmonic modulators. We reveal the influence of spatial dispersion of conductivity on plasmonic spectra and show that i…
▽ More
We study the spectra and dam** of surface plasmon-polaritons in double graphene layer structures. It is shown that application of bias voltage between layers shifts the edge of plasmon absorption associated with the interband transitions. This effect could be used in efficient plasmonic modulators. We reveal the influence of spatial dispersion of conductivity on plasmonic spectra and show that it results in the shift of cutoff frequency to the higher values.
△ Less
Submitted 17 November, 2012; v1 submitted 15 November, 2012;
originally announced November 2012.
-
Amplified Stimulated Terahertz Emission at Room temperature from Optically Pumped Graphene
Authors:
Stephane Boubanga Tombet,
Silvia Chan,
Taiichi Otsuji,
Akira Satou,
and Victor Ryzhii
Abstract:
Room temperature Terahertz stimulated emission and population inversion in optically pumped graphene is reported. We experimentally observe fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in an exfoliated graphene on SiO2/Si substrate under pum** with a 1550-nm, 80-fs pulsed fiber laser beam and probing with the corresponding terahertz beam generated…
▽ More
Room temperature Terahertz stimulated emission and population inversion in optically pumped graphene is reported. We experimentally observe fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in an exfoliated graphene on SiO2/Si substrate under pum** with a 1550-nm, 80-fs pulsed fiber laser beam and probing with the corresponding terahertz beam generated by optical rectification in a nonlinear electro optical sensor. The time resolved electric field intensity originating from the coherent terahertz photon emission is electro-optically sampled in an total-reflection geometry. The comparison of terahertz electric fields intensities measured on SiO2/Si substrate and that one from graphene clearly indicate that graphene sheet act like an amplifying medium. The Emission spectra agrees relatively well the pum** photon spectrum and its dependency on the pum** power shows a threshold like behavior, testifying the occurrence of the negative conductivity in the THz spectral range and the population inversion. The threshold pum** intensity > 5*10^6 W/cm^2 is in a good agreement with simulations.
△ Less
Submitted 8 March, 2011; v1 submitted 11 November, 2010;
originally announced November 2010.
