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An Analytic and Experimental Treatment of Fiber Optic Chemical Sensing: Results on Evanescent Wave Spectrometry
Authors:
Joseph Plumitallo,
** Ho Kim,
Silverio Johnson,
Do-Joong Lee,
Stephen Giardini,
Sean Dinneen,
Richard Osgood III,
Jimmy Xu
Abstract:
Standoff chemical sensing of chemicals and toxic compounds is very desirable for actively monitoring residential, commercial, and industrial spaces. Analytes such as toxic industrial compounds (TICs), chemical warfare agents (CWAs), and environmental pollutants (EPs) can pose serious threats to civilians, warfighters, and the environment. We report on highly sensitive, robust, and inexpensive dist…
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Standoff chemical sensing of chemicals and toxic compounds is very desirable for actively monitoring residential, commercial, and industrial spaces. Analytes such as toxic industrial compounds (TICs), chemical warfare agents (CWAs), and environmental pollutants (EPs) can pose serious threats to civilians, warfighters, and the environment. We report on highly sensitive, robust, and inexpensive distributed standoff fiber optic chemical sensors (FOCSs). FOCSs are activated by analytes reaching a sensing region and inducing a change in its optical properties. The information of a spectral response is transmitted by a shift in transmission spectra probed by evanescent waves, corresponding to the detection of an analyte. However, there are many factors that play a role in the implementation and optimization of such fiber sensors. We find it beneficial to construct the theory of general optochemical waveguide sensors to guide the analysis. We apply it to a specific fiber platfom that is robust, broadband, multi-target, scalable, and compatible to texitle fibers and fabrics - a focus of this work. The good agreement between the predicted and measured spectra of FOCSs exposed to Ammonia (NH$_3$) lends support to the analysis. The experiment yields a 1ppm sensitivity, representing the current best in class. The use of NH$_3$ in the test serves as a representative for a larger set of amine-based TICs, CWAs, EPs, and other chemical species, targeted for wide-area distributed coverage and textile-compatible sensors.
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Submitted 1 October, 2020;
originally announced October 2020.
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Single-electron tunneling PbS/InP neuromorphic computing building blocks
Authors:
Paulo F. Jarschel,
** H. Kim,
Louis Biadala,
Maxime Berthe,
Yannick Lambert,
Richard M. Osgood,
Gilles Patriarche,
Bruno Grandidier,
Jimmy Xu
Abstract:
We study single-electron tunneling (SET) characteristics in crystalline PbS/InP junctions, that exhibit single-electron Coulomb-blockade staircases along with memory and memory-fading behaviors. This gives rise to both short-term and long-term plasticities as well as a convenient non-linear response, making this structure attractive for neuromorphic computing applications. For further insights int…
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We study single-electron tunneling (SET) characteristics in crystalline PbS/InP junctions, that exhibit single-electron Coulomb-blockade staircases along with memory and memory-fading behaviors. This gives rise to both short-term and long-term plasticities as well as a convenient non-linear response, making this structure attractive for neuromorphic computing applications. For further insights into this prospect, we predict typical behaviors relevant to the field, obtained by an extrapolation of experimental data in the SET framework. The estimated minimum energy required for a synaptic operation is in the order of 1 fJ, while the maximum frequency of operation can reach the MHz range.
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Submitted 22 August, 2019;
originally announced August 2019.
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Extrinsic Photodiodes for Integrated Mid-Infrared Silicon Photonics
Authors:
Richard R. Grote,
Brian Souhan,
Noam Ophir,
Jeffrey B. Driscoll,
Keren Bergman,
Hassaram Bakhru,
William M. J. Green,
Richard M. Osgood Jr
Abstract:
Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths, the implementation of which require on-chip photodetectors. In planar geometries, dopant-based extrinsic photoconductors have long been used for mid-infrared detection with Si and Ge acting as host materials. Leveraging the dopant-induced sub-bandgap trap-states used in bulk photoconductors…
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Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths, the implementation of which require on-chip photodetectors. In planar geometries, dopant-based extrinsic photoconductors have long been used for mid-infrared detection with Si and Ge acting as host materials. Leveraging the dopant-induced sub-bandgap trap-states used in bulk photoconductors for waveguide integrated mid-infrared detectors offers simple processing, integration, and operation throughout the mid-infrared by appropriate choice of dopant. In particular, Si doped with Zn forms two trap levels ~ 0.3 eV and ~ 0.58 eV above the valence band, and has been utilized extensively for cryogenically cooled bulk extrinsic photoconductors. In this letter, we present room temperature operation of Zn+ implanted Si waveguide photodiodes from 2200 nm to 2400 nm, with measured responsivities of up to 87 mA/W and low dark currents of < 10 microamps.
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Submitted 24 June, 2014;
originally announced June 2014.
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Wavelength conversion and parametric amplification of optical pulses via quasi-phase-matched FWM in long-period Bragg silicon waveguides
Authors:
Spyros Lavdas,
Shuang Zhao,
Jeffrey B. Driscoll,
Richard R. Grote,
Richard M. Osgood,
Nicolae C. Panoiu
Abstract:
We present a theoretical analysis supported by comprehensive numerical simulations of quasi phase-matched four-wave mixing (FWM) of ultrashort optical pulses that propagate in weakly width-modulated silicon photonic nanowire gratings. Our study reveals that, by properly designing the optical waveguide such that the interacting pulses co-propagate with the same group-velocity, a conversion efficien…
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We present a theoretical analysis supported by comprehensive numerical simulations of quasi phase-matched four-wave mixing (FWM) of ultrashort optical pulses that propagate in weakly width-modulated silicon photonic nanowire gratings. Our study reveals that, by properly designing the optical waveguide such that the interacting pulses co-propagate with the same group-velocity, a conversion efficiency enhancement of more than 15 dB, as compared to a uniform waveguide, can readily be achieved. We also analyze the dependence of the conversion efficiency and FWM gain on the pulse width, time delay, walk-off parameter, and grating modulation depth.
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Submitted 28 May, 2014;
originally announced May 2014.
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Generation of parabolic similaritons in tapered silicon photonic wires: comparison of pulse dynamics at telecom and mid-IR wavelengths
Authors:
Spyros Lavdas,
Jeffrey B. Driscoll,
Hongyi Jiang,
Richard R. Grote,
Richard M. Osgood, Jr.,
Nicolae C. Panoiu
Abstract:
We study the generation of parabolic self-similar optical pulses in tapered Si photonic nanowires (Si-PhNWs) both at telecom (λ=1.55 μm) and mid-IR (λ=2.2 μm) wavelengths. Our computational study is based on a rigorous theoretical model, which fully describes the influence of linear and nonlinear optical effects on pulse propagation in Si-PhNWs with arbitrarily varying width. Numerical simulations…
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We study the generation of parabolic self-similar optical pulses in tapered Si photonic nanowires (Si-PhNWs) both at telecom (λ=1.55 μm) and mid-IR (λ=2.2 μm) wavelengths. Our computational study is based on a rigorous theoretical model, which fully describes the influence of linear and nonlinear optical effects on pulse propagation in Si-PhNWs with arbitrarily varying width. Numerical simulations demonstrate that, in the normal dispersion regime, optical pulses evolve naturally into parabolic pulses upon propagating in millimeter-long tapered Si-PhNWs, with the efficiency of this pulse resha** process being strongly dependent on the spectral and pulse parameter regime in which the device operates, as well as the particular shape of the Si-PhNW.
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Submitted 4 July, 2013;
originally announced July 2013.
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Optical Third-Harmonic Generation in Graphene
Authors:
Sung-Young Hong,
Jerry I. Dadap,
Nicholas Petrone,
Po-Chun Yeh,
James Hone,
Richard M. Osgood Jr
Abstract:
We report strong third-harmonic generation (THG) in monolayer graphene grown by chemical vapor deposition (CVD) and transferred to an amorphous silica (glass) substrate; the photon energy is in three-photon resonance with the exciton-shifted van Hove singularity at the M-point of graphene. Our polarization- and azimuthal-rotation-dependent measurements confirm the expected symmetry properties for…
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We report strong third-harmonic generation (THG) in monolayer graphene grown by chemical vapor deposition (CVD) and transferred to an amorphous silica (glass) substrate; the photon energy is in three-photon resonance with the exciton-shifted van Hove singularity at the M-point of graphene. Our polarization- and azimuthal-rotation-dependent measurements confirm the expected symmetry properties for this nonlinear process. Since the third-harmonic signal exceeds that of bulk glass by more than two orders of magnitude, the signal contrast permits background-free scanning of graphene and provides insight into the structural properties of graphene.
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Submitted 9 January, 2013; v1 submitted 8 January, 2013;
originally announced January 2013.
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Bridging the Mid-Infrared-to-Telecom Gap with Silicon Nanophotonic Spectral Translation
Authors:
** Liu,
Bart Kuyken,
Gunther Roelkens,
Roel Baets,
Richard M. Osgood Jr,
William M. J. Green
Abstract:
Expanding far beyond traditional applications in optical interconnects at telecommunications wavelengths, the silicon nanophotonic integrated circuit platform has recently proven its merits for working with mid-infrared (mid-IR) optical signals in the 2-8 μm range. Mid-IR integrated optical systems are capable of addressing applications including industrial process and environmental monitoring, th…
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Expanding far beyond traditional applications in optical interconnects at telecommunications wavelengths, the silicon nanophotonic integrated circuit platform has recently proven its merits for working with mid-infrared (mid-IR) optical signals in the 2-8 μm range. Mid-IR integrated optical systems are capable of addressing applications including industrial process and environmental monitoring, threat detection, medical diagnostics, and free-space communication. Rapid progress has led to the demonstration of various silicon components designed for the on-chip processing of mid-IR signals, including waveguides, vertical grating couplers, microcavities, and electrooptic modulators. Even so, a notable obstacle to the continued advancement of chip-scale systems is imposed by the narrow-bandgap semiconductors, such as InSb and HgCdTe, traditionally used to convert mid-IR photons to electrical currents. The cryogenic or multi-stage thermo-electric cooling required to suppress dark current noise, exponentially dependent upon the ratio Eg/kT, can limit the development of small, low-power, and low-cost integrated optical systems for the mid-IR. However, if the mid-IR optical signal could be spectrally translated to shorter wavelengths, for example within the near-infrared telecom band, photodetectors using wider bandgap semiconductors such as InGaAs or Ge could be used to eliminate prohibitive cooling requirements. Moreover, telecom band detectors typically perform with higher detectivity and faster response times when compared with their mid-IR counterparts. Here we address these challenges with a silicon-integrated approach to spectral translation, by employing efficient four-wave mixing (FWM) and large optical parametric gain in silicon nanophotonic wires.
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Submitted 14 August, 2012;
originally announced August 2012.
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Light trap** in a 30-nm organic photovoltaic cell for efficient carrier collection and light absorption
Authors:
Cheng-Chia Tsai,
Richard R. Grote,
Ashish Banerjee,
Richard M. Osgood Jr.,
Dirk Englund
Abstract:
We describe surface patterning strategies that permit high photon-collection efficiency together with high carrier-collection efficiency in an ultra-thin planar heterojunction organic photovoltaic cell. Optimized designs reach up to 50% photon collection efficiency in a P3HT layer of only 30 nm, representing a 3- to 5-fold improvement over an unpatterned cell of the same thickness. We compare the…
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We describe surface patterning strategies that permit high photon-collection efficiency together with high carrier-collection efficiency in an ultra-thin planar heterojunction organic photovoltaic cell. Optimized designs reach up to 50% photon collection efficiency in a P3HT layer of only 30 nm, representing a 3- to 5-fold improvement over an unpatterned cell of the same thickness. We compare the enhancement of light confinement in the active layer with an ITO top layer for TE and TM polarized light, and demonstrate that the light absorption can increase by a factor of 2 due to a gap-plasmon mode in the active layer.
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Submitted 20 January, 2012;
originally announced January 2012.
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Mid-infrared optical parametric amplifier using silicon nanophotonic waveguides
Authors:
** Liu,
Richard M. Osgood Jr.,
Yurii A. Vlasov,
William M. J. Green
Abstract:
All-optical signal processing is envisioned as an approach to dramatically decrease power consumption and speed up performance of next-generation optical telecommunications networks. Nonlinear optical effects, such as four-wave mixing (FWM) and parametric gain, have long been explored to realize all-optical functions in glass fibers. An alternative approach is to employ nanoscale engineering of…
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All-optical signal processing is envisioned as an approach to dramatically decrease power consumption and speed up performance of next-generation optical telecommunications networks. Nonlinear optical effects, such as four-wave mixing (FWM) and parametric gain, have long been explored to realize all-optical functions in glass fibers. An alternative approach is to employ nanoscale engineering of silicon waveguides to enhance the optical nonlinearities by up to five orders of magnitude, enabling integrated chip-scale all-optical signal processing. Previously, strong two-photon absorption (TPA) of the telecom-band pump has been a fundamental and unavoidable obstacle, limiting parametric gain to values on the order of a few dB. Here we demonstrate a silicon nanophotonic optical parametric amplifier exhibiting gain as large as 25.4 dB, by operating the pump in the mid-IR near one-half the band-gap energy (E~0.55eV, lambda~2200nm), at which parasitic TPA-related absorption vanishes. This gain is high enough to compensate all insertion losses, resulting in 13 dB net off-chip amplification. Furthermore, dispersion engineering dramatically increases the gain bandwidth to more than 220 nm, all realized using an ultra-compact 4 mm silicon chip. Beyond its significant relevance to all-optical signal processing, the broadband parametric gain also facilitates the simultaneous generation of multiple on-chip mid-IR sources through cascaded FWM, covering a 500 nm spectral range. Together, these results provide a foundation for the construction of silicon-based room-temperature mid-IR light sources including tunable chip-scale parametric oscillators, optical frequency combs, and supercontinuum generators.
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Submitted 10 January, 2010;
originally announced January 2010.
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Observations of zero-order bandgaps in negative-index photonic crystal superlattices at the near-infrared
Authors:
S. Kocaman,
R. Chatterjee,
N. C. Panoiu,
J. F. McMillan,
M. B. Yu,
R. M. Osgood,
D. L. Kwong,
C. W. Wong
Abstract:
We present the first observations of zero-n bandgaps in photonic crystal superlattices consisting of alternating stacks of negative index photonic crystals and positive index dielectric materials in the near-infrared. Guided by ab initio three-dimensional numerical simulations, the fabricated nanostructured superlattices demonstrate the presence of zero-order gaps in remarkable agreement with th…
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We present the first observations of zero-n bandgaps in photonic crystal superlattices consisting of alternating stacks of negative index photonic crystals and positive index dielectric materials in the near-infrared. Guided by ab initio three-dimensional numerical simulations, the fabricated nanostructured superlattices demonstrate the presence of zero-order gaps in remarkable agreement with theoretical predictions across a range of different superlattice periods and unit cell variations. These volume-averaged zero-index superlattice structures present a new type of photonic band gap, with potential for complete wavefront control for arbitrary phase delay lines and open cavity resonances.
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Submitted 15 April, 2009;
originally announced April 2009.
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Semi-discrete solitons in arrayed waveguide structures with Kerr nonlinearity
Authors:
N. -C. Panoiu,
B. A. Malomed,
R. M. Osgood Jr
Abstract:
We construct families of optical semi-discrete composite solitons (SDCSs), with one or two independent propagation constants, supported by a planar slab waveguide, XPM-coupled to a periodic array of stripes. Both structures feature the cubic nonlinearity and support intrinsic modes with mutually orthogonal polarizations. We report three species of SDCSs, odd, even, and twisted ones, the first ty…
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We construct families of optical semi-discrete composite solitons (SDCSs), with one or two independent propagation constants, supported by a planar slab waveguide, XPM-coupled to a periodic array of stripes. Both structures feature the cubic nonlinearity and support intrinsic modes with mutually orthogonal polarizations. We report three species of SDCSs, odd, even, and twisted ones, the first type being stable. Transverse motion of phase-tilted solitons, with potential applications to beam steering, is considered too.
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Submitted 19 May, 2008;
originally announced May 2008.
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Achieving sub-diffraction imaging through bound surface states in negative-refracting photonic crystals at the near-infrared
Authors:
R. Chatterjee,
N. C. Panoiu,
K. Liu,
Z. Dios,
M. B. Yu,
M. T. Doan,
L. J. Kaufman,
R. M. Osgood,
C. W. Wong
Abstract:
We report the observation of imaging beyond the diffraction limit due to bound surface states in negative refraction photonic crystals. We achieve an effective negative index figure-of-merit [-Re(n)/Im(n)] of at least 380, ~125x improvement over recent efforts in the near-infrared, with a 0.4 THz bandwidth. Supported by numerical and theoretical analyses, the observed near-field resolution is 0.…
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We report the observation of imaging beyond the diffraction limit due to bound surface states in negative refraction photonic crystals. We achieve an effective negative index figure-of-merit [-Re(n)/Im(n)] of at least 380, ~125x improvement over recent efforts in the near-infrared, with a 0.4 THz bandwidth. Supported by numerical and theoretical analyses, the observed near-field resolution is 0.47 lambda, clearly smaller than the diffraction limit of 0.61 lambda. Importantly, we show this sub-diffraction imaging is due to the resonant excitation of surface slab modes, allowing refocusing of non-propagating evanescent waves.
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Submitted 6 March, 2008;
originally announced March 2008.
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Near-infrared negative-index metamaterials consisting of multiple layers of perforated metal-dielectric stacks
Authors:
Shuang Zhang,
Wenjun Fan,
N. C. Panoiu,
K. J. Malloy,
R. M. Osgood,
S. R. J. Brueck
Abstract:
In this paper, we numerically demonstrate a near-infrared negative-index metamaterial (NIM) slab consisting of multiple layers of perforated metal-dielectric stacks and exhibiting low imaginary part of index over the wavelength of negative refraction. The effective index is obtained using two different numerical methods and found to be consistent. Backward phase propagation is verified by calcul…
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In this paper, we numerically demonstrate a near-infrared negative-index metamaterial (NIM) slab consisting of multiple layers of perforated metal-dielectric stacks and exhibiting low imaginary part of index over the wavelength of negative refraction. The effective index is obtained using two different numerical methods and found to be consistent. Backward phase propagation is verified by calculation of fields inside the metamaterial. These results point to a new design of low loss thick metamaterial at optical frequencies.
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Submitted 22 May, 2006;
originally announced May 2006.
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Semi-discrete composite solitons in arrays of quadratically nonlinear waveguides
Authors:
Nicolae C. Panoiu,
Richard M. Osgood,
Boris A. Malomed
Abstract:
We demonstrate that an array of discrete waveguides on a slab substrate, both featuring the $χ^{2}$ nonlinearity, supports stable solitons composed of discrete and continuous components. Two classes of fundamental composite solitons are identified: ones consisting of a discrete fundamental-frequency (FF) component in the waveguide array, coupled to a continuous second-harmonic (SH) component in…
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We demonstrate that an array of discrete waveguides on a slab substrate, both featuring the $χ^{2}$ nonlinearity, supports stable solitons composed of discrete and continuous components. Two classes of fundamental composite solitons are identified: ones consisting of a discrete fundamental-frequency (FF) component in the waveguide array, coupled to a continuous second-harmonic (SH) component in the slab waveguide, and solitons with an inverted FF/SH structure. Twisted bound states of the fundamental solitons are found too. In contrast with usual systems, the \emph{intersite-centered} fundamental solitons and bound states with the twisted continuous components are stable, in an almost entire domain of their existence.
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Submitted 18 January, 2006;
originally announced January 2006.
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Enhanced stimulated Raman scattering in slow-light photonic crystal waveguides
Authors:
J. F. McMillan,
X. Yang,
N. C. Panoiu,
R. M. Osgood,
C. W. Wong
Abstract:
We investigate for the first time the enhancement of the stimulated Raman scattering in slow-light Silicon-on-Insulator (SOI) photonic crystal line defect waveguides. By applying the Bloch-Floquet formalism to the guided modes in a planar photonic crystal, we develop a formalism that relates the intensity of the down-shifted Stokes signal to the pump intensity and the modal group velocities. The…
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We investigate for the first time the enhancement of the stimulated Raman scattering in slow-light Silicon-on-Insulator (SOI) photonic crystal line defect waveguides. By applying the Bloch-Floquet formalism to the guided modes in a planar photonic crystal, we develop a formalism that relates the intensity of the down-shifted Stokes signal to the pump intensity and the modal group velocities. The formalism is then applied to two prospective schemes for enhanced stimulated Raman generation in slow-light photonic crystal waveguides. The results demonstrate a maximum factor of 10^4 (66,000) enhancement with respect to SOI channel waveguides. Effects of two photon absorption, intrinsic scattering, and disorder with respect to slow-light Raman generation towards optically-pumped silicon amplifiers and lasers are also discussed.
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Submitted 14 December, 2005; v1 submitted 4 November, 2005;
originally announced November 2005.
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Demonstration of Near-Infrared Negative-Index Materials
Authors:
Shuang Zhang,
Wenjun Fan,
N. C. Panoiu,
K. J. Malloy,
R. M. Osgood,
S. R. J. Brueck
Abstract:
Metal-based negative refractive index materials have been extensively studied in the microwave region. However, negative-index metamaterials have not been realized at near-IR or visible fre-quencies due to difficulties of fabrication and to the generally poorer optical properties of metals at these wavelengths. In this paper, we report the first fabrication and experimental verification of a tra…
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Metal-based negative refractive index materials have been extensively studied in the microwave region. However, negative-index metamaterials have not been realized at near-IR or visible fre-quencies due to difficulties of fabrication and to the generally poorer optical properties of metals at these wavelengths. In this paper, we report the first fabrication and experimental verification of a transversely structured metal-dielectric-metal multilayer exhibiting a negative refractive in-dex around 2 mm. Both the amplitude and the phase of the transmission and reflection were measured experimentally, and are in good agreement with a rigorous coupled wave analysis.
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Submitted 28 April, 2005;
originally announced April 2005.
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Polaritonics in complex structures: Confinement, bandgap materials, and coherent control
Authors:
David W. Ward,
Eric Statz,
Jaime D. Beers,
T. Feurer,
John D. Joannopoulos,
Keith A. Nelson,
Ryan M. Roth,
Richard M. Osgood,
Kevin J. Webb
Abstract:
We report on the design, fabrication, and testing of ferroelectric patterned materials in the guided-wave and polaritonic regime. We demonstrate their functionality and exploit polariton confinement for amplification and coherent control using temporal pulse sha**.
We report on the design, fabrication, and testing of ferroelectric patterned materials in the guided-wave and polaritonic regime. We demonstrate their functionality and exploit polariton confinement for amplification and coherent control using temporal pulse sha**.
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Submitted 21 September, 2004;
originally announced September 2004.
