Showing 1–11 of 11 results for author: Oliver, R A

Improved sequentially processed Cu(In,Ga)(S,Se)2 by Ag alloying

Authors: Aubin JC. M. Prot, Michele Melchiorre, Tilly Schaaf, Ricardo G. Poeira, Hossam Elanzeery, Alberto Lomuscio, Souhaib Oueslati, Anastasia Zelenina, Thomas Dalibor, Gunnar Kusch, Yucheng Hu, Rachel A. Oliver, Susanne Siebentritt

Abstract: Alloying small quantities of silver into Cu(In,Ga)Se2 was shown to improve the efficiency for wide and low band gap solar cells. We study low band gap industrial Cu(In,Ga)(S,Se)2 absorbers, substituting less than 10% of the copper with silver, using absolute photoluminescence and cathodoluminescence spectroscopy. Silver improves the grain size and promotes the interdiffusion of Ga and In across th… ▽ More Alloying small quantities of silver into Cu(In,Ga)Se2 was shown to improve the efficiency for wide and low band gap solar cells. We study low band gap industrial Cu(In,Ga)(S,Se)2 absorbers, substituting less than 10% of the copper with silver, using absolute photoluminescence and cathodoluminescence spectroscopy. Silver improves the grain size and promotes the interdiffusion of Ga and In across the depth of the absorber, resulting in a smoother band gap gradient. However, a certain lateral inhomogeneity is observed near the front and back sides. The non-radiative losses in the bare absorbers are reduced by up to 30 meV. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Additive GaN solid immersion lenses for enhanced photon extraction efficiency from diamond color centers

Authors: Xingrui Cheng, Nils Kolja Wessling, Saptarsi Ghosh, Andrew R. Kirkpatrick, Menno J. Kappers, Yashna N. D. Lekhai, Gavin W. Morley, Rachel A. Oliver, Jason M. Smith, Martin D. Dawson, Patrick S. Salter, Michael J. Strain

Abstract: Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centres in wider quantum systems. Here we report increased fluorescent light collection efficiency from laser-written nitrogen vacancy centers (NV) in bulk diamond facilitated by micro-transfer printed GaN solid immersion… ▽ More Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centres in wider quantum systems. Here we report increased fluorescent light collection efficiency from laser-written nitrogen vacancy centers (NV) in bulk diamond facilitated by micro-transfer printed GaN solid immersion lenses. Both laser-writing of NV centres and transfer printing of micro-lens structures are compatible with high spatial resolution, enabling deterministic fabrication routes towards future scalable systems development. The micro-lenses are integrated in a non-invasive manner, as they are added on top of the unstructured diamond surface and bond by Van-der-Waals forces. For emitters at 5 micrometer depth, we find approximately 2x improvement of fluorescent light collection using an air objective with a numerical aperture of NA = 0.95 in good agreement with simulations. Similarly, the solid immersion lenses strongly enhance light collection when using an objective with NA = 0.5, significantly improving the signal-to-noise ratio of the NV center emission while maintaining the NV's quantum properties after integration. △ Less

Submitted 20 June, 2023; originally announced June 2023.

Comments: 21 pages, 13 figures

Fabrication and transfer print based integration of free-standing GaN membrane micro-lenses onto semiconductor chips

Authors: Nils Kolja Wessling, Saptarsi Ghosh, Benoit Guilhabert, Menno Kappers, Miles Toon, Rachel A. Oliver, Martin D. Dawson, Michael J. Strain

Abstract: We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabrication process flow to suspend micron scale plano-convex lens platelets from 6" Si growth wafers and show their subsequent transfer-printing integration. A growth process targeted at producing unbowed epitaxial wafers w… ▽ More We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabrication process flow to suspend micron scale plano-convex lens platelets from 6" Si growth wafers and show their subsequent transfer-printing integration. A growth process targeted at producing unbowed epitaxial wafers was combined with optimisation of the etching volume in order to produce flat devices for printing. Lens structures were fabricated with 6 to 11 $μ$m diameter, 2 $μ$m height and root-mean-squared surface roughness below 2 nm. The lenses were printed in a vertically coupled geometry on a single crystalline diamond substrate and with $μ$m-precise placement on a horizontally coupled photonic integrated circuit waveguide facet. Optical performance analysis shows that these lenses could be used to couple to diamond nitrogen vacancy centres at micron scale depths and demonstrates their potential for visible to infrared light-coupling applications. △ Less

Submitted 19 September, 2022; v1 submitted 10 August, 2022; originally announced August 2022.

Comments: 16 pages, 14 figures

Gender issues in fundamental physics: Strumia's bibliometric analysis fails to account for key confounders and confuses correlation with causation

Authors: Philip Ball, T. Benjamin Britton, Erin Hengel, Philip Moriarty, Rachel A. Oliver, Gina Rippon, Angela Saini, Jessica Wade

Abstract: Alessandro Strumia recently published a survey of gender differences in publications and citations in high-energy physics (HEP). In addition to providing full access to the data, code, and methodology, Strumia (2020) systematically describes and accounts for gender differences in HEP citation networks. His analysis points both to ongoing difficulties in attracting women to high-energy physics and… ▽ More Alessandro Strumia recently published a survey of gender differences in publications and citations in high-energy physics (HEP). In addition to providing full access to the data, code, and methodology, Strumia (2020) systematically describes and accounts for gender differences in HEP citation networks. His analysis points both to ongoing difficulties in attracting women to high-energy physics and an encouraging-though slow-trend in improvement. Unfortunately, however, the time and effort Strumia (2020) devoted to collating and quantifying the data are not matched by a similar rigour in interpreting the results. To support his conclusions, he selectively cites available literature and fails to adequately adjust for a range of confounding factors. For example, his analyses do not consider how unobserved factors -- e.g., a tendency to overcite well-known authors -- drive a wedge between quality and citations and correlate with author gender. He also fails to take into account many structural and non-structural factors -- including, but not limited to, direct discrimination and the expectations women form (and actions they take) in response to it -- that undoubtedly lead to gender differences in productivity. We therefore believe that a number of Strumia's conclusions are not supported by his analysis. Indeed, we re-analyse a subsample of solo-authored papers from his data, adjusting for year and journal of publication, authors' research age and their lifetime "fame". Our re-analysis suggests that female-authored papers are actually cited more than male-authored papers. This finding is inconsistent with the "greater male variability" hypothesis Strumia (2020) proposes to explain many of his results. △ Less

Submitted 3 December, 2020; originally announced June 2021.

Comments: As submitted to Quantitative Science Studies

Thermal stress modelling of diamond on GaN/III-Nitride membranes

Authors: Jerome A. Cuenca, Matthew D. Smith, Daniel E. Field, Fabien C-P. Massabuau, Soumen Mandal, James Pomeroy, David J. Wallis, Rachel A. Oliver, Iain Thayne, Martin Kuball, Oliver A. Williams

Abstract: Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach,… ▽ More Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach, a numerical model and experimental validation. The thermal stresses are caused by the mismatch in the coefficient of thermal expansion (CTE) between the GaN/III-N stack, silicon (Si) and the diamond from room temperature to CVD growth temperatures. Simplified analytical wafer bow models underestimate the membrane bow for small sizes while numerical models replicate the stresses and bows with increased accuracy using temperature gradients. The largest tensile stress measured using Raman spectroscopy at room temperature was approximately 1.0 $\pm0.2$ GPa while surface profilometry shows membrane bows as large as \SI{58}{\micro\metre}. This large bow is caused by additional stresses from the Si frame in the initial heating phase which are held in place by the diamond and highlights challenges for any device fabrication using contact lithography. However, the bow can be reduced if the membrane is pre-stressed to become flat at CVD temperatures. In this way, a sufficient platform to grow diamond on GaN/III-N structures without wafer bonding can be realised. △ Less

Submitted 18 February, 2021; originally announced February 2021.

Journal ref: Carbon 174, 647-661 (2021)

Ti alloyed $α$-Ga$_2$O$_3$: route towards wide band gap engineering

Authors: A. Barthel, J. W. Roberts, M. Napari, T. N. Huq, A. Kovács, R. A. Oliver, P. R. Chalker, T. Sajavaara, F. C-P. Massabuau

Abstract: The suitability of Ti as a band gap modifier for $α$-Ga$_2$O$_3$ was investigated, taking advantage of the isostructural α-phases and high band gap difference between Ti$_2$O$_3$ and Ga$_2$O$_3$. Films of Ti:Ga$_2$O$_3$, with a range of Ti concentrations, synthesized by atomic layer deposition on sapphire substrates, were characterized to determine how crystallinity and band gap vary with composit… ▽ More The suitability of Ti as a band gap modifier for $α$-Ga$_2$O$_3$ was investigated, taking advantage of the isostructural α-phases and high band gap difference between Ti$_2$O$_3$ and Ga$_2$O$_3$. Films of Ti:Ga$_2$O$_3$, with a range of Ti concentrations, synthesized by atomic layer deposition on sapphire substrates, were characterized to determine how crystallinity and band gap vary with composition for this alloy. The deposition of crystalline $α$-(Ti$_x$Ga$_{1-x}$)$_2$O$_3$ films with up to x~5.3%, was demonstrated. At greater Ti concentration, the films became amorphous. Modification of the band gap over a range of ~ 270 meV was achieved across the crystalline films and a maximum change in band gap from pure $α$-Ga$_2$O$_3$ of ~1.1 eV was observed for the films of greatest Ti fraction (61% Ti relative to Ga). The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a significant modification in band gap shows promise for band gap engineering and the enhancement in versatility of application of $α$-Ga$_2$O$_3$ in optoelectronic devices. △ Less

Submitted 2 June, 2020; originally announced June 2020.

Comments: 12 pages, 5 figures, 1 table

Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Authors: J. W. Roberts, P. R. Chalker, B. Ding, R. A. Oliver, J. T. Gibbon, L. A. H. Jones, V. R. Dhanak, L. J. Phillips, J. D. Major, F. C-P. Massabuau

Abstract: Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate temperature and plasma processing parameters on the resultant crystallinity and optical properties of the Ga2O3 films were investigated. The deposition temperature was found to have a significant effect on the film crystal… ▽ More Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate temperature and plasma processing parameters on the resultant crystallinity and optical properties of the Ga2O3 films were investigated. The deposition temperature was found to have a significant effect on the film crystallinity. At temperatures below 200°C amorphous Ga2O3 films were deposited. Between 250°C and 350°C the films became predominantly α-Ga2O3. Above 350°C the deposited films showed a mixture of α-Ga2O3 and ε-Ga2O3 phases. Plasma power and O2 flow rate were observed to have less influence over the resultant phases present in the films. However, both parameters could be tuned to alter the strain of the film. Ultraviolet transmittance measurements on the Ga2O3 films showed that the bandgaps ranges from 5.0 eV to 5.2 eV with the largest bandgap of 5.2 eV occurring for the α-Ga2O3 phase deposited at 250°C. △ Less

Submitted 19 August, 2019; originally announced August 2019.

Comments: 11 pages, 7 figures, 1 table

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

Authors: D. Kundys, D. Sutherland, M. Davies, F. Oehler, J. Griffiths, P. Dawson, M. J. Kappers, C. J. Humphreys, S. Schulz, F. Tang, R. A. Oliver

Abstract: In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are ver… ▽ More In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are very broad with full width at half-maximum height increasing from 81 to 330 meV as the In fraction increases. Comparative photoluminescence excitation spectroscopy indicates that the recombination mainly involves strongly localised carriers. At a temperature of 10 K the degree of linear polarisation of the a-plane samples is much smaller than of the m-plane counterparts and also varies across the spectrum. From polarisation-resolved photoluminescence excitation spectroscopy we measured the energy splitting between the lowest valence sub-band states to lie in the range of 23-54 meV for both a-and m-plane samples in which we could observe distinct exciton features in the polarised photoluminescence excitation spectroscopy. Thus, the thermal occupation of a higher valence subband cannot be responsible for the reduction of the degree of linear polarisation. Time-resolved spectroscopy indicates that in a-plane samples there is an extra emission component which at least partly responsible for the reduction in the degree of linear polarisation. △ Less

Submitted 11 November, 2016; originally announced December 2016.

Comments: 9 pages 7 figures

Journal ref: Science and Technology of Advanced Materials, 17, (2016)

Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities

Authors: Alexander Woolf, Tim Puchtler, Igor Aharonovich, Tongtong Zhu, Nan Niu, Danqing Wang, Rachel A. Oliver, Evelyn L. Hu

Abstract: Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in… ▽ More Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we utilize the distinctive, high quality (Q~5500) modes of the cavities, and the change in the highest intensity mode as a function of pump power to better understand the dominant radiative processes. The variations of threshold power and lasing wavelength as a function of gain medium help us identify the possible limitations to lower-threshold lasing with quantum dot active medium. In addition, we have identified a distinctive lasing signature for quantum dot materials, which consistently lase at wavelengths shorter than the peak of the room temperature gain emission. These findings not only provide better understanding of lasing in nitride-based quantum dot cavity systems, but also shed insight into the more fundamental issues of light matter coupling in such systems. △ Less

Submitted 28 July, 2014; v1 submitted 21 July, 2014; originally announced July 2014.

Low threshold, room-temperature microdisk lasers in the blue spectral range

Authors: Igor Aharonovich, Alexander Woolf, Kasey J. Russell, Tongtong Zhu, Menno J. Kappers, Rachel A. Oliver, Evelyn L. Hu

Abstract: InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm2. This work, the first demonstration of lasing action from GaN microdisk cavities with QDs… ▽ More InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm2. This work, the first demonstration of lasing action from GaN microdisk cavities with QDs in the active layer, provides a critical step for the nitrides in realizing low threshold photonic devices with efficient coupling between QDs and an optical cavity. △ Less

Submitted 31 August, 2012; originally announced August 2012.

A full free spectral range tuning of p-i-n doped Gallium Nitride microdisk cavity

Authors: Nan Niu, Tsung-Li Liu, Igor Aharonovich, Kasey J. Russell, Alexander Woolf, Thomas C. Sadler, Haitham A. R. El-Ella, Menno J. Kappers, Rachel A. Oliver, Evelyn L. Hu

Abstract: Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully demonstrated by irradiating the microdisks with a ultraviolet laser (380nm) in DI water. For incident laser powers between 150 and 960 nW, the tuning rate varies linearly. Etching of the top surface of the cavity is pro… ▽ More Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully demonstrated by irradiating the microdisks with a ultraviolet laser (380nm) in DI water. For incident laser powers between 150 and 960 nW, the tuning rate varies linearly. Etching of the top surface of the cavity is proposed as the driving force for the observed shift in WGMs, and is supported by experiments. The tuning for GaN/InGaN microdisk cavities is an important step for deterministically realizing novel nanophotonic devices for studying cavity quantum electrodynamics. △ Less

Submitted 23 June, 2012; originally announced June 2012.