Showing 1–19 of 19 results for author: Oliver, R

Improved sequentially processed Cu(In,Ga)(S,Se)2 by Ag alloying

Authors: Aubin JC. M. Prot, Michele Melchiorre, Tilly Schaaf, Ricardo G. Poeira, Hossam Elanzeery, Alberto Lomuscio, Souhaib Oueslati, Anastasia Zelenina, Thomas Dalibor, Gunnar Kusch, Yucheng Hu, Rachel A. Oliver, Susanne Siebentritt

Abstract: Alloying small quantities of silver into Cu(In,Ga)Se2 was shown to improve the efficiency for wide and low band gap solar cells. We study low band gap industrial Cu(In,Ga)(S,Se)2 absorbers, substituting less than 10% of the copper with silver, using absolute photoluminescence and cathodoluminescence spectroscopy. Silver improves the grain size and promotes the interdiffusion of Ga and In across th… ▽ More Alloying small quantities of silver into Cu(In,Ga)Se2 was shown to improve the efficiency for wide and low band gap solar cells. We study low band gap industrial Cu(In,Ga)(S,Se)2 absorbers, substituting less than 10% of the copper with silver, using absolute photoluminescence and cathodoluminescence spectroscopy. Silver improves the grain size and promotes the interdiffusion of Ga and In across the depth of the absorber, resulting in a smoother band gap gradient. However, a certain lateral inhomogeneity is observed near the front and back sides. The non-radiative losses in the bare absorbers are reduced by up to 30 meV. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Strong coupling in molecular systems: a simple predictor employing routine optical measurements

Authors: Marie S. Rider, Edwin C. Johnson, Demetris Bates, William P. Wardley, Robert H. Gordon, Robert D. J. Oliver, Steven P. Armes, Graham J. Leggett, William L. Barnes

Abstract: We provide a simple method that enables readily acquired experimental data to be used to predict whether or not a candidate molecular material may exhibit strong coupling. Specifically, we explore the relationship between the hybrid molecular/photonic (polaritonic) states and the bulk optical response of the molecular material. For a given material this approach enables a prediction of the maximum… ▽ More We provide a simple method that enables readily acquired experimental data to be used to predict whether or not a candidate molecular material may exhibit strong coupling. Specifically, we explore the relationship between the hybrid molecular/photonic (polaritonic) states and the bulk optical response of the molecular material. For a given material this approach enables a prediction of the maximum extent of strong coupling (vacuum Rabi splitting), irrespective of the nature of the confined light field. We provide formulae for the upper limit of the splitting in terms of the molar absorption coefficient, the attenuation coefficient, the extinction coefficient (imaginary part of the refractive index) and the absorbance. To illustrate this approach we provide a number of examples, we also discuss some of the limitations of our approach. △ Less

Submitted 15 February, 2024; originally announced February 2024.

Additive GaN solid immersion lenses for enhanced photon extraction efficiency from diamond color centers

Authors: Xingrui Cheng, Nils Kolja Wessling, Saptarsi Ghosh, Andrew R. Kirkpatrick, Menno J. Kappers, Yashna N. D. Lekhai, Gavin W. Morley, Rachel A. Oliver, Jason M. Smith, Martin D. Dawson, Patrick S. Salter, Michael J. Strain

Abstract: Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centres in wider quantum systems. Here we report increased fluorescent light collection efficiency from laser-written nitrogen vacancy centers (NV) in bulk diamond facilitated by micro-transfer printed GaN solid immersion… ▽ More Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centres in wider quantum systems. Here we report increased fluorescent light collection efficiency from laser-written nitrogen vacancy centers (NV) in bulk diamond facilitated by micro-transfer printed GaN solid immersion lenses. Both laser-writing of NV centres and transfer printing of micro-lens structures are compatible with high spatial resolution, enabling deterministic fabrication routes towards future scalable systems development. The micro-lenses are integrated in a non-invasive manner, as they are added on top of the unstructured diamond surface and bond by Van-der-Waals forces. For emitters at 5 micrometer depth, we find approximately 2x improvement of fluorescent light collection using an air objective with a numerical aperture of NA = 0.95 in good agreement with simulations. Similarly, the solid immersion lenses strongly enhance light collection when using an objective with NA = 0.5, significantly improving the signal-to-noise ratio of the NV center emission while maintaining the NV's quantum properties after integration. △ Less

Submitted 20 June, 2023; originally announced June 2023.

Comments: 21 pages, 13 figures

Large ion-neutral drift velocities and plasma heating in partially ionized coronal rain blobs

Authors: David Martínez-Gómez, Ramón Oliver, Elena Khomenko, Manuel Collados

Abstract: In this paper we present a numerical study of the dynamics of partially ionized coronal rain blobs. We use a two-fluid model to perform a high-resolution 2D simulation that takes into account the collisional interaction between the charged and neutral particles contained in the plasma. We follow the evolution of a cold plasma condensation as it falls through an isothermal vertically stratified atm… ▽ More In this paper we present a numerical study of the dynamics of partially ionized coronal rain blobs. We use a two-fluid model to perform a high-resolution 2D simulation that takes into account the collisional interaction between the charged and neutral particles contained in the plasma. We follow the evolution of a cold plasma condensation as it falls through an isothermal vertically stratified atmosphere that represents the much hotter and lighter solar corona. We study the consequences of the different degrees of collisional coupling that are present in the system. On the one hand, we find that at the dense core of the blob there is a very strong coupling and the charged and neutral components of the plasma behave as a single fluid, with negligible drift velocities (of a few cm s^-1). On the other hand, at the edges of the blob the coupling is much weaker and larger drift velocities (of the order of 1 km s^-1) appear. In addition, frictional heating causes large increases of temperature at the transition layers between the blob and the corona. For the first time we show that such large drift velocities and temperature enhancements can develop as a consequence of ion-neutral decoupling associated to coronal rain dynamics. This can lead to enhanced emission coming from the plasma at the coronal rain-corona boundary, which possesses transition region temperature. △ Less

Submitted 10 November, 2022; originally announced November 2022.

Comments: 11 pages, 7 figures, and 1 animation. Accepted for publication in The Astrophysical Journal Letters

Fabrication and transfer print based integration of free-standing GaN membrane micro-lenses onto semiconductor chips

Authors: Nils Kolja Wessling, Saptarsi Ghosh, Benoit Guilhabert, Menno Kappers, Miles Toon, Rachel A. Oliver, Martin D. Dawson, Michael J. Strain

Abstract: We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabrication process flow to suspend micron scale plano-convex lens platelets from 6" Si growth wafers and show their subsequent transfer-printing integration. A growth process targeted at producing unbowed epitaxial wafers w… ▽ More We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabrication process flow to suspend micron scale plano-convex lens platelets from 6" Si growth wafers and show their subsequent transfer-printing integration. A growth process targeted at producing unbowed epitaxial wafers was combined with optimisation of the etching volume in order to produce flat devices for printing. Lens structures were fabricated with 6 to 11 $μ$m diameter, 2 $μ$m height and root-mean-squared surface roughness below 2 nm. The lenses were printed in a vertically coupled geometry on a single crystalline diamond substrate and with $μ$m-precise placement on a horizontally coupled photonic integrated circuit waveguide facet. Optical performance analysis shows that these lenses could be used to couple to diamond nitrogen vacancy centres at micron scale depths and demonstrates their potential for visible to infrared light-coupling applications. △ Less

Submitted 19 September, 2022; v1 submitted 10 August, 2022; originally announced August 2022.

Comments: 16 pages, 14 figures

Gender issues in fundamental physics: Strumia's bibliometric analysis fails to account for key confounders and confuses correlation with causation

Authors: Philip Ball, T. Benjamin Britton, Erin Hengel, Philip Moriarty, Rachel A. Oliver, Gina Rippon, Angela Saini, Jessica Wade

Abstract: Alessandro Strumia recently published a survey of gender differences in publications and citations in high-energy physics (HEP). In addition to providing full access to the data, code, and methodology, Strumia (2020) systematically describes and accounts for gender differences in HEP citation networks. His analysis points both to ongoing difficulties in attracting women to high-energy physics and… ▽ More Alessandro Strumia recently published a survey of gender differences in publications and citations in high-energy physics (HEP). In addition to providing full access to the data, code, and methodology, Strumia (2020) systematically describes and accounts for gender differences in HEP citation networks. His analysis points both to ongoing difficulties in attracting women to high-energy physics and an encouraging-though slow-trend in improvement. Unfortunately, however, the time and effort Strumia (2020) devoted to collating and quantifying the data are not matched by a similar rigour in interpreting the results. To support his conclusions, he selectively cites available literature and fails to adequately adjust for a range of confounding factors. For example, his analyses do not consider how unobserved factors -- e.g., a tendency to overcite well-known authors -- drive a wedge between quality and citations and correlate with author gender. He also fails to take into account many structural and non-structural factors -- including, but not limited to, direct discrimination and the expectations women form (and actions they take) in response to it -- that undoubtedly lead to gender differences in productivity. We therefore believe that a number of Strumia's conclusions are not supported by his analysis. Indeed, we re-analyse a subsample of solo-authored papers from his data, adjusting for year and journal of publication, authors' research age and their lifetime "fame". Our re-analysis suggests that female-authored papers are actually cited more than male-authored papers. This finding is inconsistent with the "greater male variability" hypothesis Strumia (2020) proposes to explain many of his results. △ Less

Submitted 3 December, 2020; originally announced June 2021.

Comments: As submitted to Quantitative Science Studies

Thermal stress modelling of diamond on GaN/III-Nitride membranes

Authors: Jerome A. Cuenca, Matthew D. Smith, Daniel E. Field, Fabien C-P. Massabuau, Soumen Mandal, James Pomeroy, David J. Wallis, Rachel A. Oliver, Iain Thayne, Martin Kuball, Oliver A. Williams

Abstract: Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach,… ▽ More Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach, a numerical model and experimental validation. The thermal stresses are caused by the mismatch in the coefficient of thermal expansion (CTE) between the GaN/III-N stack, silicon (Si) and the diamond from room temperature to CVD growth temperatures. Simplified analytical wafer bow models underestimate the membrane bow for small sizes while numerical models replicate the stresses and bows with increased accuracy using temperature gradients. The largest tensile stress measured using Raman spectroscopy at room temperature was approximately 1.0 $\pm0.2$ GPa while surface profilometry shows membrane bows as large as \SI{58}{\micro\metre}. This large bow is caused by additional stresses from the Si frame in the initial heating phase which are held in place by the diamond and highlights challenges for any device fabrication using contact lithography. However, the bow can be reduced if the membrane is pre-stressed to become flat at CVD temperatures. In this way, a sufficient platform to grow diamond on GaN/III-N structures without wafer bonding can be realised. △ Less

Submitted 18 February, 2021; originally announced February 2021.

Journal ref: Carbon 174, 647-661 (2021)

Ti alloyed $α$-Ga$_2$O$_3$: route towards wide band gap engineering

Authors: A. Barthel, J. W. Roberts, M. Napari, T. N. Huq, A. Kovács, R. A. Oliver, P. R. Chalker, T. Sajavaara, F. C-P. Massabuau

Abstract: The suitability of Ti as a band gap modifier for $α$-Ga$_2$O$_3$ was investigated, taking advantage of the isostructural α-phases and high band gap difference between Ti$_2$O$_3$ and Ga$_2$O$_3$. Films of Ti:Ga$_2$O$_3$, with a range of Ti concentrations, synthesized by atomic layer deposition on sapphire substrates, were characterized to determine how crystallinity and band gap vary with composit… ▽ More The suitability of Ti as a band gap modifier for $α$-Ga$_2$O$_3$ was investigated, taking advantage of the isostructural α-phases and high band gap difference between Ti$_2$O$_3$ and Ga$_2$O$_3$. Films of Ti:Ga$_2$O$_3$, with a range of Ti concentrations, synthesized by atomic layer deposition on sapphire substrates, were characterized to determine how crystallinity and band gap vary with composition for this alloy. The deposition of crystalline $α$-(Ti$_x$Ga$_{1-x}$)$_2$O$_3$ films with up to x~5.3%, was demonstrated. At greater Ti concentration, the films became amorphous. Modification of the band gap over a range of ~ 270 meV was achieved across the crystalline films and a maximum change in band gap from pure $α$-Ga$_2$O$_3$ of ~1.1 eV was observed for the films of greatest Ti fraction (61% Ti relative to Ga). The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a significant modification in band gap shows promise for band gap engineering and the enhancement in versatility of application of $α$-Ga$_2$O$_3$ in optoelectronic devices. △ Less

Submitted 2 June, 2020; originally announced June 2020.

Comments: 12 pages, 5 figures, 1 table

Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Authors: J. W. Roberts, P. R. Chalker, B. Ding, R. A. Oliver, J. T. Gibbon, L. A. H. Jones, V. R. Dhanak, L. J. Phillips, J. D. Major, F. C-P. Massabuau

Abstract: Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate temperature and plasma processing parameters on the resultant crystallinity and optical properties of the Ga2O3 films were investigated. The deposition temperature was found to have a significant effect on the film crystal… ▽ More Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate temperature and plasma processing parameters on the resultant crystallinity and optical properties of the Ga2O3 films were investigated. The deposition temperature was found to have a significant effect on the film crystallinity. At temperatures below 200°C amorphous Ga2O3 films were deposited. Between 250°C and 350°C the films became predominantly α-Ga2O3. Above 350°C the deposited films showed a mixture of α-Ga2O3 and ε-Ga2O3 phases. Plasma power and O2 flow rate were observed to have less influence over the resultant phases present in the films. However, both parameters could be tuned to alter the strain of the film. Ultraviolet transmittance measurements on the Ga2O3 films showed that the bandgaps ranges from 5.0 eV to 5.2 eV with the largest bandgap of 5.2 eV occurring for the α-Ga2O3 phase deposited at 250°C. △ Less

Submitted 19 August, 2019; originally announced August 2019.

Comments: 11 pages, 7 figures, 1 table

Thick adherent diamond films on AlN with low thermal barrier resistance

Authors: Soumen Mandal, Jerome Cuenca, Fabien Massabuau, Chao Yuan, Henry Bland, James W. Pomeroy, David Wallis, Tim Batten, David Morgan, Rachel Oliver, Martin Kuball, Oliver A. Williams

Abstract: Growth of $>$100 $μ$m thick diamond layer adherent on aluminium nitride is presented in this work. While thick films failed to adhere on untreated AlN films, hydrogen/nitrogen plasma treated AlN films retained the thick diamond layers. Clear differences in zeta potential measurement confirms the surface modification due to hydrogen/nitrogen plasma treatment. Areal Raman maps showed an increase in… ▽ More Growth of $>$100 $μ$m thick diamond layer adherent on aluminium nitride is presented in this work. While thick films failed to adhere on untreated AlN films, hydrogen/nitrogen plasma treated AlN films retained the thick diamond layers. Clear differences in zeta potential measurement confirms the surface modification due to hydrogen/nitrogen plasma treatment. Areal Raman maps showed an increase in non-diamond carbon in the initial layers of diamond grown on pre-treated AlN. The presence of non-diamond carbon has minimal effect on the interface between diamond and AlN. The surfaces studied with x-ray photoelectron spectroscopy (XPS) revealed a clear distinction between pre-treated and untreated samples. The surface aluminium goes from nitrogen rich environment to an oxygen rich environment after pre-treatment. Cross section transmission electron microscopy shows a clean interface between diamond and AlN. Thermal barrier resistance between diamond and AlN was found to be in the range of 16 m$^2$K/GW which is a large improvement on the current state-of-the-art. △ Less

Submitted 4 July, 2019; originally announced July 2019.

Normal modes of transverse coronal loop oscillations from numerical simulations: I. Method and test case

Authors: S. Rial, I. Arregui, R. Oliver, J. Terradas

Abstract: The purpose of this work is to develop a procedure to obtain the normal modes of a coronal loop from time-dependent numerical simulations with the aim of better understanding observed transverse loop oscillations. To achieve this goal, in this paper we present a new method and test its performance with a problem for which the normal modes can be computed analytically. In a follow-up paper, the app… ▽ More The purpose of this work is to develop a procedure to obtain the normal modes of a coronal loop from time-dependent numerical simulations with the aim of better understanding observed transverse loop oscillations. To achieve this goal, in this paper we present a new method and test its performance with a problem for which the normal modes can be computed analytically. In a follow-up paper, the application to the simulations of \citet{rial2013} is tackled. The method proceeds iteratively and at each step consists of (i) a time-dependent numerical simulation followed by (ii) the Complex Empirical Orthogonal Function (CEOF) analysis of the simulation results. The CEOF analysis provides an approximation to the normal mode eigenfunctions that can be used to set up the initial conditions for the numerical simulation of the following iteration, in which an improved normal mode approximation is obtained. The iterative process is stopped once the global difference between successive approximate eigenfunctions is below a prescribed threshold. The equilibrium used in this paper contains material discontinuities that result in one eigenfunction with a jump across these discontinuities and two eigenfunctions whose normal derivatives are discontinuous there. After 6 iterations, the approximation to the frequency and eigenfunctions are accurate to $\lesssim 0.7$\% except for the eigenfunction with discontinuities, which displays a much larger error at these positions. △ Less

Submitted 13 June, 2019; v1 submitted 1 February, 2019; originally announced February 2019.

Journal ref: Rial et al. (2019) ApJ, 876, 86

Effects of microstructure and growth conditions on quantum emitters in Gallium Nitride

Authors: Minh Nguyen, Tongtong Zhu, Mehran Kianinia, Fabien Massabuau, Igor Aharonovich, Milos Toth, Rachel Oliver, Carlo Bradac

Abstract: Single-photon emitters in gallium nitride (GaN) are gaining interest as attractive quantum systems due to the well-established techniques for growth and nanofabrication of the host material, as well as its remarkable chemical stability and optoelectronic properties. We investigate the nature of such single-photon emitters in GaN with a systematic analysis of various samples produced under differen… ▽ More Single-photon emitters in gallium nitride (GaN) are gaining interest as attractive quantum systems due to the well-established techniques for growth and nanofabrication of the host material, as well as its remarkable chemical stability and optoelectronic properties. We investigate the nature of such single-photon emitters in GaN with a systematic analysis of various samples produced under different growth conditions. We explore the effect that intrinsic structural defects (dislocations and stacking faults), do** and crystal orientation in GaN have on the formation of quantum emitters. We investigate the relationship between the position of the emitters (determined via spectroscopy and photoluminescence measurements) and the location of threading dislocations (characterised both via atomic force microscopy and cathodoluminescence). We find that quantum emitters do not correlate with stacking faults or dislocations; instead, they are more likely to originate from point defects or impurities whose density is modulated by the local extended defect density. △ Less

Submitted 28 November, 2018; originally announced November 2018.

Dissipative instability in a partially ionised prominence slab

Authors: I. Ballai, B. Pinter, R. Oliver, M. Alexandrou

Abstract: We investigate the nature of dissipative instability appearing in a prominence planar thread filled with partially ionised plasma in the incompressible limit. The importance of partial ionisation is investigated in terms of the ionisation factor and wavelength of waves propagating in the slab. To highlight the role of partial ionisation, we have constructed models describing various situations we… ▽ More We investigate the nature of dissipative instability appearing in a prominence planar thread filled with partially ionised plasma in the incompressible limit. The importance of partial ionisation is investigated in terms of the ionisation factor and wavelength of waves propagating in the slab. To highlight the role of partial ionisation, we have constructed models describing various situations we can meet in solar prominence fine structure. Matching the solutions for the transversal component of the velocity and total pressure at the interfaces between the prominence slab and surrounding plasmas, we derived a dispersion relation whose imaginary part describes the evolution of the instability. Results are obtained in the limit of weak dissipation. We have investigated the appearance of instabilities in prominence dark plumes using single and two-fluid approximations. We show that dissipative instabilities appear for flow speeds that are less than the Kelvin-Helmholtz instability threshold. The onset of instability is determined by the equilibrium flow strength, the ionisation factor of the plasma, the wavelength of waves and the ion-neutral collisional rate. For a given wavelength and for ionisation degrees closer to a neutral gas, the propagating waves become unstable for a narrow band of flow speeds, meaning that neutrals have a stabilising effect. Our results show that the partially ionised plasma describing prominence dark plumes becomes unstable only in a two-fluid (charged particles-neutrals) model, that is for periods that are smaller than the ion-neutral collision time. The present study improves our understanding of stability of solar prominences and the role of partial ionisation in destabilising the plasma. We show the necessity of two-fluid approximation when discussing the nature of instabilities: waves in a single fluid approximation show a great deal of stability. △ Less

Submitted 21 March, 2017; originally announced March 2017.

Comments: 12 pages, 11 figures

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

Authors: D. Kundys, D. Sutherland, M. Davies, F. Oehler, J. Griffiths, P. Dawson, M. J. Kappers, C. J. Humphreys, S. Schulz, F. Tang, R. A. Oliver

Abstract: In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are ver… ▽ More In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are very broad with full width at half-maximum height increasing from 81 to 330 meV as the In fraction increases. Comparative photoluminescence excitation spectroscopy indicates that the recombination mainly involves strongly localised carriers. At a temperature of 10 K the degree of linear polarisation of the a-plane samples is much smaller than of the m-plane counterparts and also varies across the spectrum. From polarisation-resolved photoluminescence excitation spectroscopy we measured the energy splitting between the lowest valence sub-band states to lie in the range of 23-54 meV for both a-and m-plane samples in which we could observe distinct exciton features in the polarised photoluminescence excitation spectroscopy. Thus, the thermal occupation of a higher valence subband cannot be responsible for the reduction of the degree of linear polarisation. Time-resolved spectroscopy indicates that in a-plane samples there is an extra emission component which at least partly responsible for the reduction in the degree of linear polarisation. △ Less

Submitted 11 November, 2016; originally announced December 2016.

Comments: 9 pages 7 figures

Journal ref: Science and Technology of Advanced Materials, 17, (2016)

Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities

Authors: Alexander Woolf, Tim Puchtler, Igor Aharonovich, Tongtong Zhu, Nan Niu, Danqing Wang, Rachel A. Oliver, Evelyn L. Hu

Abstract: Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in… ▽ More Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we utilize the distinctive, high quality (Q~5500) modes of the cavities, and the change in the highest intensity mode as a function of pump power to better understand the dominant radiative processes. The variations of threshold power and lasing wavelength as a function of gain medium help us identify the possible limitations to lower-threshold lasing with quantum dot active medium. In addition, we have identified a distinctive lasing signature for quantum dot materials, which consistently lase at wavelengths shorter than the peak of the room temperature gain emission. These findings not only provide better understanding of lasing in nitride-based quantum dot cavity systems, but also shed insight into the more fundamental issues of light matter coupling in such systems. △ Less

Submitted 28 July, 2014; v1 submitted 21 July, 2014; originally announced July 2014.

A Stochastic Finite Element Model for the Dynamics of Globular Macromolecules

Authors: Robin Oliver, Daniel J. Read, Oliver G. Harlen, Sarah A. Harris

Abstract: We describe a novel coarse-grained simulation method for modelling the dynamics of globular macromolecules, such as proteins. The macromolecule is treated as a continuum that is subject to thermal fluctuations. The model includes a non-linear treatment of elasticity and viscosity with thermal noise that is solved using finite element analysis. We have validated the method by demonstrating that the… ▽ More We describe a novel coarse-grained simulation method for modelling the dynamics of globular macromolecules, such as proteins. The macromolecule is treated as a continuum that is subject to thermal fluctuations. The model includes a non-linear treatment of elasticity and viscosity with thermal noise that is solved using finite element analysis. We have validated the method by demonstrating that the model provides average kinetic and potential energies that are in agreement with the classical equipartition theorem. In addition, we have performed Fourier analysis on the simulation trajectories obtained for a series of linear beams to confirm that the correct average energies are present in the first two Fourier bending modes. We have then used the new modelling method to simulate the thermal fluctuations of a representative protein over 500ns timescales. Using reasonable parameters for the material properties, we have demonstrated that the overall deformation of the biomolecule is consistent with the results obtained for proteins in general from atomistic molecular dynamics simulations. △ Less

Submitted 21 September, 2012; originally announced September 2012.

Comments: 38 pages, 6 figures

Low threshold, room-temperature microdisk lasers in the blue spectral range

Authors: Igor Aharonovich, Alexander Woolf, Kasey J. Russell, Tongtong Zhu, Menno J. Kappers, Rachel A. Oliver, Evelyn L. Hu

Abstract: InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm2. This work, the first demonstration of lasing action from GaN microdisk cavities with QDs… ▽ More InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm2. This work, the first demonstration of lasing action from GaN microdisk cavities with QDs in the active layer, provides a critical step for the nitrides in realizing low threshold photonic devices with efficient coupling between QDs and an optical cavity. △ Less

Submitted 31 August, 2012; originally announced August 2012.

A full free spectral range tuning of p-i-n doped Gallium Nitride microdisk cavity

Authors: Nan Niu, Tsung-Li Liu, Igor Aharonovich, Kasey J. Russell, Alexander Woolf, Thomas C. Sadler, Haitham A. R. El-Ella, Menno J. Kappers, Rachel A. Oliver, Evelyn L. Hu

Abstract: Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully demonstrated by irradiating the microdisks with a ultraviolet laser (380nm) in DI water. For incident laser powers between 150 and 960 nW, the tuning rate varies linearly. Etching of the top surface of the cavity is pro… ▽ More Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully demonstrated by irradiating the microdisks with a ultraviolet laser (380nm) in DI water. For incident laser powers between 150 and 960 nW, the tuning rate varies linearly. Etching of the top surface of the cavity is proposed as the driving force for the observed shift in WGMs, and is supported by experiments. The tuning for GaN/InGaN microdisk cavities is an important step for deterministically realizing novel nanophotonic devices for studying cavity quantum electrodynamics. △ Less

Submitted 23 June, 2012; originally announced June 2012.

Driving LED in a Nanosecond Regime by a Fast Operational Amplifier

Authors: Joachim Rose, Stella Bradbury, Isabel Bond, Paul Ogden, Andrew Price, Richard Oliver, Yerbol Farkhatuly Khassen

Abstract: It is widely believed that the generation of high speed optical signals is not the job for an LED. However this work is done to show that there are techniques which can be used to produce nanosecond square pulses from a diode. Rise and fall times of a typical 10ns long signal were 1-2 ns and the intensity of the emission could be controlled by the supply voltage. The wavelength of the radiation wa… ▽ More It is widely believed that the generation of high speed optical signals is not the job for an LED. However this work is done to show that there are techniques which can be used to produce nanosecond square pulses from a diode. Rise and fall times of a typical 10ns long signal were 1-2 ns and the intensity of the emission could be controlled by the supply voltage. The wavelength of the radiation was 472 nm, which is blue in colour, but any longer or even shorter wavelengths can similarly be used. The consistency of the experiment and its theoretical model was analysed by computer simulations using OrCAD and PSPICE. △ Less

Submitted 8 November, 2010; originally announced November 2010.

Comments: 9 pages, 10 figures