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Reservoir Computing with Superconducting Electronics
Authors:
Graham E. Rowlands,
Minh-Hai Nguyen,
Guilhem J. Ribeill,
Andrew P. Wagner,
Luke C. G. Govia,
Wendson A. S. Barbosa,
Daniel J. Gauthier,
Thomas A. Ohki
Abstract:
The rapidity and low power consumption of superconducting electronics makes them an ideal substrate for physical reservoir computing, which commandeers the computational power inherent to the evolution of a dynamical system for the purposes of performing machine learning tasks. We focus on a subset of superconducting circuits that exhibit soliton-like dynamics in simple transmission line geometrie…
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The rapidity and low power consumption of superconducting electronics makes them an ideal substrate for physical reservoir computing, which commandeers the computational power inherent to the evolution of a dynamical system for the purposes of performing machine learning tasks. We focus on a subset of superconducting circuits that exhibit soliton-like dynamics in simple transmission line geometries. With numerical simulations we demonstrate the effectiveness of these circuits in performing higher-order parity calculations and channel equalization at rates approaching 100 Gb/s. The availability of a proven superconducting logic scheme considerably simplifies the path to a fully integrated reservoir computing platform and makes superconducting reservoirs an enticing substrate for high rate signal processing applications.
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Submitted 3 March, 2021;
originally announced March 2021.
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Josephson-junction infrared single-photon detector
Authors:
Evan D. Walsh,
Woochan Jung,
Gil-Ho Lee,
Dmitri K. Efetov,
Bae-Ian Wu,
K. -F. Huang,
Thomas A. Ohki,
Takashi Taniguchi,
Kenji Watanabe,
Philip Kim,
Dirk Englund,
Kin Chung Fong
Abstract:
Josephson junctions (JJs) are ubiquitous superconducting devices, enabling high sensitivity magnetometers and voltage amplifiers, as well as forming the basis of high performance cryogenic computer and superconducting quantum computers. While JJ performance can be degraded by quasiparticles (QPs) formed from broken Cooper pairs, this phenomenon also opens opportunities to sensitively detect electr…
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Josephson junctions (JJs) are ubiquitous superconducting devices, enabling high sensitivity magnetometers and voltage amplifiers, as well as forming the basis of high performance cryogenic computer and superconducting quantum computers. While JJ performance can be degraded by quasiparticles (QPs) formed from broken Cooper pairs, this phenomenon also opens opportunities to sensitively detect electromagnetic radiation. Here we demonstrate single near-infrared photon detection by coupling photons to the localized surface plasmons of a graphene-based JJ. Using the photon-induced switching statistics of the current-biased JJ, we reveal the critical role of QPs generated by the absorbed photon in the detection mechanism. The photon-sensitive JJ will enable a high-speed, low-power optical interconnect for future JJ-based computing architectures.
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Submitted 4 November, 2020;
originally announced November 2020.
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Nanosecond Reversal of Three-Terminal Spin Hall Effect Memories Sustained at Cryogenic Temperatures
Authors:
Graham E. Rowlands,
Minh-Hai Nguyen,
Sriharsha V. Aradhya,
Shengjie Shi,
Colm A. Ryan,
Robert A. Buhrman,
Thomas A. Ohki
Abstract:
We characterize the nanosecond pulse switching performance of the three-terminal magnetic tunnel junctions (MTJs), driven by the spin Hall effect (SHE) in the channel, at a cryogenic temperature of 3 K. The SHE-MTJ devices exhibit reasonable magnetic switching and reliable current switching by as short pulses as 1 ns of $<10^{12}$ A/m$^{2}$ magnitude, exceeding the expectation from conventional ma…
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We characterize the nanosecond pulse switching performance of the three-terminal magnetic tunnel junctions (MTJs), driven by the spin Hall effect (SHE) in the channel, at a cryogenic temperature of 3 K. The SHE-MTJ devices exhibit reasonable magnetic switching and reliable current switching by as short pulses as 1 ns of $<10^{12}$ A/m$^{2}$ magnitude, exceeding the expectation from conventional macrospin model. The pulse switching bit error rates reach below $10^{-6}$ for < 10 ns pulses. Similar performance is achieved with exponentially decaying pulses expected to be delivered to the SHE-MTJ device by a nanocryotron device in parallel configuration of a realistic memory cell structure. These results suggest the viability of the SHE-MTJ structure as a cryogenic memory element for exascale superconducting computing systems.
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Submitted 23 September, 2019;
originally announced September 2019.
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Cryogenic Memory Architecture Integrating Spin Hall Effect based Magnetic Memory and Superconductive Cryotron Devices
Authors:
Minh-Hai Nguyen,
Guilhem J. Ribeill,
Martin Gustafsson,
Shengjie Shi,
Sriharsha V. Aradhya,
Andrew P. Wagner,
Leonardo M. Ranzani,
Lijun Zhu,
Reza Baghdadi3 Brenden Butters,
Emily Toomey,
Marco Colangelo,
Patrick A. Truitt,
Amir Jafari-Salim,
David McAllister,
Daniel Yohannes,
Sean R. Cheng,
Rich Lazarus,
Oleg Mukhanov,
Karl K. Berggren,
Robert A. Buhrman,
Graham E. Rowlands,
Thomas A. Ohki
Abstract:
One of the most challenging obstacles to realizing exascale computing is minimizing the energy consumption of L2 cache, main memory, and interconnects to that memory. For promising cryogenic computing schemes utilizing Josephson junction superconducting logic, this obstacle is exacerbated by the cryogenic system requirements that expose the technology's lack of high-density, high-speed and power-e…
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One of the most challenging obstacles to realizing exascale computing is minimizing the energy consumption of L2 cache, main memory, and interconnects to that memory. For promising cryogenic computing schemes utilizing Josephson junction superconducting logic, this obstacle is exacerbated by the cryogenic system requirements that expose the technology's lack of high-density, high-speed and power-efficient memory. Here we demonstrate an array of cryogenic memory cells consisting of a non-volatile three-terminal magnetic tunnel junction element driven by the spin Hall effect, combined with a superconducting heater-cryotron bit-select element. The write energy of these memory elements is roughly 8 pJ with a bit-select element, designed to achieve a minimum overhead power consumption of about 30%. Individual magnetic memory cells measured at 4 K show reliable switching with write error rates below $10^{-6}$, and a 4x4 array can be fully addressed with bit select error rates of $10^{-6}$. This demonstration is a first step towards a full cryogenic memory architecture targeting energy and performance specifications appropriate for applications in superconducting high performance and quantum computing control systems, which require significant memory resources operating at 4 K.
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Submitted 1 July, 2019;
originally announced July 2019.
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Sub-nanosecond switching in a cryogenic spin-torque spin-valve memory element with a dilute permalloy free layer
Authors:
Laura Rehm,
Volker Sluka,
Graham E. Rowlands,
Minh-Hai Nguyen,
Thomas A. Ohki,
Andrew D. Kent
Abstract:
We present a study of the pulsed current switching characteristics of spin-valve nanopillars with in-plane magnetized dilute permalloy and undiluted permalloy free layers in the ballistic regime at low temperature. The dilute permalloy free layer device switches much faster: the characteristic switching time for a permalloy free (Ni0.83Fe0.17) layer device is 1.18 ns, while that for a dilute perma…
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We present a study of the pulsed current switching characteristics of spin-valve nanopillars with in-plane magnetized dilute permalloy and undiluted permalloy free layers in the ballistic regime at low temperature. The dilute permalloy free layer device switches much faster: the characteristic switching time for a permalloy free (Ni0.83Fe0.17) layer device is 1.18 ns, while that for a dilute permalloy ([Ni0.83Fe0.17]0.6Cu0.4) free layer device is 0.475 ns. A ballistic macrospin model can capture the data trends with a reduced spin torque asymmetry parameter, reduced spin polarization and increased Gilbert dam** for the dilute permalloy free layer relative to the permalloy devices. Our study demonstrates that reducing the magnetization of the free layer increases the switching speed while greatly reducing the switching energy and shows a promising route toward even lower power magnetic memory devices compatible with superconducting electronics.
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Submitted 30 May, 2019;
originally announced May 2019.
