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Development of transmon qubits solely from optical lithography on 300mm wafers
Authors:
N. Foroozani,
C. Hobbs,
C. C. Hung,
S. Olson,
D. Ashworth,
E. Holland,
M. Malloy,
P. Kearney,
B. O'Brien,
B. Bunday,
D. DiPaola,
W. Advocate,
T. Murray,
P. Hansen,
S. Novak,
S. Bennett,
M. Rodgers,
B. Baker-O'Neal,
B. Sapp,
E. Barth,
J. Hedrick,
R. Goldblatt,
S. S. Papa Rao,
K. D. Osborn
Abstract:
Qubit information processors are increasing in footprint but currently rely on e-beam lithography for patterning the required Josephson junctions (JJs). Advanced optical lithography is an alternative patterning method, and we report on the development of transmon qubits patterned solely with optical lithography. The lithography uses 193 nm wavelength exposure and 300-mm large silicon wafers. Qubit…
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Qubit information processors are increasing in footprint but currently rely on e-beam lithography for patterning the required Josephson junctions (JJs). Advanced optical lithography is an alternative patterning method, and we report on the development of transmon qubits patterned solely with optical lithography. The lithography uses 193 nm wavelength exposure and 300-mm large silicon wafers. Qubits and arrays of evaluation JJs were patterned with process control which resulted in narrow feature distributions: a standard deviation of 0:78% for a 220 nm linewidth pattern realized across over half the width of the wafers. Room temperature evaluation found a 2.8-3.6% standard deviation in JJ resistance in completed chips. The qubits used aluminum and titanium nitride films on silicon substrates without substantial silicon etching. T1 times of the qubits were extracted at 26 - 27 microseconds, indicating a low level of material-based qubit defects. This study shows that large wafer optical lithography on silicon is adequate for high-quality transmon qubits, and shows a promising path for improving many-qubit processors.
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Submitted 22 February, 2019;
originally announced February 2019.
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Chalcogenide Glass-on-Graphene Photonics
Authors:
Hongtao Lin,
Yi Song,
Yizhong Huang,
Derek Kita,
Kaiqi Wang,
Lan Li,
Junying Li,
Hanyu Zheng,
Skylar Deckoff-Jones,
Zhengqian Luo,
Haozhe Wang,
Spencer Novak,
Anupama Yadav,
Chung-Che Huang,
Tian Gu,
Daniel Hewak,
Kathleen Richardson,
**g Kong,
Juejun Hu
Abstract:
Two-dimensional (2-D) materials are of tremendous interest to integrated photonics given their singular optical characteristics spanning light emission, modulation, saturable absorption, and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. In this paper, we present a new route for 2-D mate…
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Two-dimensional (2-D) materials are of tremendous interest to integrated photonics given their singular optical characteristics spanning light emission, modulation, saturable absorption, and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. In this paper, we present a new route for 2-D material integration with planar photonics. Central to this approach is the use of chalcogenide glass, a multifunctional material which can be directly deposited and patterned on a wide variety of 2-D materials and can simultaneously function as the light guiding medium, a gate dielectric, and a passivation layer for 2-D materials. Besides claiming improved fabrication yield and throughput compared to the traditional transfer process, our technique also enables unconventional multilayer device geometries optimally designed for enhancing light-matter interactions in the 2-D layers. Capitalizing on this facile integration method, we demonstrate a series of high-performance glass-on-graphene devices including ultra-broadband on-chip polarizers, energy-efficient thermo-optic switches, as well as graphene-based mid-infrared (mid-IR) waveguide-integrated photodetectors and modulators.
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Submitted 5 March, 2017;
originally announced March 2017.
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High-Q mid-infrared chalcogenide glass resonators
Authors:
Hongtao Lin,
Lan Li,
Yi Zou,
Spencer Novak,
Kathleen Richardson,
Juejun Hu
Abstract:
In this letter, we fabricated and characterized chalcogenide glass resonators monolithically integrated on mid-infrared transparent CaF2 substrates. The devices feature an intrinsic Q-factor of 4E5 at 5.2 micron wavelength, which represents the highest Q-factor reported in planar mid-infrared resonators. It is found that moisture can significantly impact the device performance when the device was…
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In this letter, we fabricated and characterized chalcogenide glass resonators monolithically integrated on mid-infrared transparent CaF2 substrates. The devices feature an intrinsic Q-factor of 4E5 at 5.2 micron wavelength, which represents the highest Q-factor reported in planar mid-infrared resonators. It is found that moisture can significantly impact the device performance when the device was exposed to an ambient environment, although the high-Q characteristics can be restored after undergoing an annealing treatment. Using these devices, we further demonstrated on-chip cavity-enhanced spectroscopy to quantify mid-IR absorption of ethanol solutions around 5.2 micron wavelength.
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Submitted 3 November, 2018; v1 submitted 13 December, 2016;
originally announced December 2016.
