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Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing
Abstract: The first report on ion transport through atomic sieves of atomically-thin 2D material is provided to solve critical limitations of electrochemical random-access memory (ECRAM) devices.
Submitted 30 September, 2021; originally announced September 2021.
Journal ref: Small 2021, 2103543