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Atomically smooth films of CsSb: a chemically robust visible light photocathode
Authors:
C. T. Parzyck,
C. A. Pennington,
W. J. I. DeBenedetti,
J. Balajka,
E. Echeverria,
H. Paik,
L. Moreschini,
B. D. Faeth,
C. Hu,
J. K. Nangoi,
V. Anil,
T. A. Arias,
M. A. Hines,
D. G. Schlom,
A. Galdi,
K. M. Shen,
J. M. Maxson
Abstract:
Alkali antimonide semiconductor photocathodes provide a promising platform for the generation of high brightness electron beams, which are necessary for the development of cutting-edge probes including x-ray free electron lasers and ultrafast electron diffraction. However, to harness the intrinsic brightness limits in these compounds, extrinsic degrading factors, including surface roughness and co…
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Alkali antimonide semiconductor photocathodes provide a promising platform for the generation of high brightness electron beams, which are necessary for the development of cutting-edge probes including x-ray free electron lasers and ultrafast electron diffraction. However, to harness the intrinsic brightness limits in these compounds, extrinsic degrading factors, including surface roughness and contamination, must be overcome. By exploring the growth of CsxSb thin films monitored by in situ electron diffraction, the conditions to reproducibly synthesize atomically smooth films of CsSb on 3C-SiC (100) and graphene coated TiO2 (110) substrates are identified, and detailed structural, morphological, and electronic characterization is presented. These films combine high quantum efficiency in the visible (up to 1.2% at 400 nm), an easily accessible photoemission threshold of 550 nm, low surface roughness (down to 600 pm on a 1 um scale), and a robustness against oxidation up to 15 times greater then Cs3Sb. These properties suggest that CsSb has the potential to operate as an alternative to Cs$_3$Sb in electron source applications where the demands of the vacuum environment might otherwise preclude the use of traditional alkali antimonides.
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Submitted 31 May, 2023;
originally announced May 2023.
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A single-crystal alkali antimonide photocathode: high efficiency in the ultra-thin limit
Authors:
C. T. Parzyck,
A. Galdi,
J. K. Nangoi,
W. J. I. DeBenedetti,
J. Balajka,
B. D. Faeth,
H. Paik,
C. Hu,
T. A. Arias,
M. A. Hines,
D. G. Schlom,
K. M. Shen,
J. M. Maxson
Abstract:
The properties of photoemission electron sources determine the ultimate performance of a wide class of electron accelerators and photon detectors. To date, all high-efficiency visible-light photocathode materials are either polycrystalline or exhibit intrinsic surface disorder, both of which limit emitted electron beam brightness. In this letter we demonstrate the synthesis of epitaxial thin films…
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The properties of photoemission electron sources determine the ultimate performance of a wide class of electron accelerators and photon detectors. To date, all high-efficiency visible-light photocathode materials are either polycrystalline or exhibit intrinsic surface disorder, both of which limit emitted electron beam brightness. In this letter we demonstrate the synthesis of epitaxial thin films of Cs$_3$Sb on 3C-SiC (001) using molecular-beam epitaxy. Films as thin as 4 nm have quantum efficiencies exceeding 2\% at 532 nm. We also find that epitaxial films have an order of magnitude larger quantum efficiency at 650 nm than comparable polycrystalline films on Si. Additionally, these films permit angle-resolved photoemission spectroscopy measurements of the electronic structure, which are found to be in good agreement with theory. Epitaxial films open the door to dramatic brightness enhancements via increased efficiency near threshold, reduced surface disorder, and the possibility of engineering new photoemission functionality at the level of single atomic layers.
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Submitted 28 December, 2021;
originally announced December 2021.
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Ab initio many-body photoemission theory of transverse energy distribution of photoelectrons: PbTe(111) as a case study with experimental comparisons
Authors:
J. Kevin Nangoi,
Siddharth Karkare,
Ravishankar Sundararaman,
Howard A. Padmore,
T. A. Arias
Abstract:
This manuscript presents, to our knowledge, the first fully ab initio many-body photoemission framework to predict the transverse momentum distributions and the mean transverse energies (MTEs) of photoelectrons from single-crystal photocathodes. The need to develop such a theory stems from the lack of studies that provide complete understanding of the underlying fundamental processes governing the…
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This manuscript presents, to our knowledge, the first fully ab initio many-body photoemission framework to predict the transverse momentum distributions and the mean transverse energies (MTEs) of photoelectrons from single-crystal photocathodes. The need to develop such a theory stems from the lack of studies that provide complete understanding of the underlying fundamental processes governing the transverse momentum distribution of photoelectrons emitted from single crystals. For example, initial predictions based on density-functional theory calculations of effective electron masses suggested that the (111) surface of PbTe would produce very small MTEs ($\leq$ 15 meV), whereas our experiments yielded MTEs ten to twenty times larger than these predictions, and also exhibited a lower photoemission threshold than predicted. The ab initio framework presented in this manuscript correctly reproduces the magnitude of the MTEs from our measurements in PbTe(111) and also the observed photoemission below the predicted threshold. Our results show that photoexcitations into bulk-like states and coherent, many-body electron-photon-phonon scattering processes, both of which initial predictions ignored, indeed play important roles in photoemission from PbTe(111). Finally, from the lessons learned, we recommend a procedure for rapid computational screening of potential single-crystal photocathodes for applications in next-generation ultrafast electron diffraction and X-ray free-electron lasers, which will enable new, significant advances in condensed matter research.
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Submitted 25 June, 2020; v1 submitted 21 June, 2020;
originally announced June 2020.
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Ultracold electrons via Near-Threshold Photoemission from Single-Crystal Cu(100)
Authors:
Siddharth Karkare,
Gowri Adhikari,
W. Andreas Schroeder,
J. Kevin Nangoi,
Tomas Arias,
Jared Maxson,
Howard Padmore
Abstract:
Achieving a low mean transverse energy or temperature of electrons emitted from the photocathode-based electron sources is critical to the development of next-generation and compact X-ray Free Electron Lasers and Ultrafast Electron Diffraction, Spectroscopy and Microscopy experiments. In this paper, we demonstrate a record low mean transverse energy of 5 meV from the cryo-cooled (100) surface of c…
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Achieving a low mean transverse energy or temperature of electrons emitted from the photocathode-based electron sources is critical to the development of next-generation and compact X-ray Free Electron Lasers and Ultrafast Electron Diffraction, Spectroscopy and Microscopy experiments. In this paper, we demonstrate a record low mean transverse energy of 5 meV from the cryo-cooled (100) surface of copper using near-threshold photoemission. Further, we also show that the electron energy spread obtained from such a surface is less than 11.5 meV, making it the smallest energy spread electron source known to date: more than an order of magnitude smaller than any existing photoemission, field emission or thermionic emission based electron source. Our measurements also shed light on the physics of electron emission and show how the energy spread at few meV scale energies is limited by both the temperature and the vacuum density of states.
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Submitted 26 February, 2020;
originally announced February 2020.
