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Photodissociation spectra of single trapped CaOH+ molecular ions
Authors:
Zhenlin Wu,
Stefan Walser,
Verena Podlesnic,
Mariano Isaza-Monsalve,
Elyas Mattivi,
Guanqun Mu,
René Nardi,
Piotr Gniewek,
Michał Tomza,
Brandon J. Furey,
Philipp Schindler
Abstract:
Molecular ions that are generated by chemical reactions with trapped atomic ions can serve as an accessible testbed for develo** molecular quantum technologies. On the other hand, they are also a hindrance to scaling up quantum computers based on atomic ions as unavoidable reactions with background gas destroy the information carriers. Here, we investigate the single- and two-photon dissociation…
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Molecular ions that are generated by chemical reactions with trapped atomic ions can serve as an accessible testbed for develo** molecular quantum technologies. On the other hand, they are also a hindrance to scaling up quantum computers based on atomic ions as unavoidable reactions with background gas destroy the information carriers. Here, we investigate the single- and two-photon dissociation processes of single $\text{CaOH}^+$ molecular ions co-trapped in $\text{Ca}^+$ ion crystals using a femtosecond laser system. We report the photodissociation cross section spectra of $\text{CaOH}^+$ for single-photon processes at $λ=$245 - 275$\,$nm and for two-photon processes at $λ=$500 - 540$\,$nm. Measurements are interpreted with quantum-chemical calculations, which predict the photodissociation threshold for $\text{CaOH}^+\to \text{Ca}^++\text{OH}$ at 265$\,$nm. This result can serve as a basis for dissociation-based spectroscopy for studying the internal structure of $\text{CaOH}^+$. The result also gives a prescription for recycling $\text{Ca}^+$ ions in large-scale trapped $\text{Ca}^+$ quantum experiments from undesired $\text{CaOH}^+$ ions formed in the presence of background water vapor.
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Submitted 8 May, 2024; v1 submitted 19 January, 2024;
originally announced January 2024.
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Observation of Silicon Nitride Nanomechanical Resonator Actuation Using Capacitive Substrate Excitation
Authors:
Gengyang Mu,
Nikaya Snell,
Chang Zhang,
Xitong Xie,
Radin Tahvildari,
Arnaud Weck,
Michel Godin,
Raphael St-Gelais
Abstract:
We observe the actuation of silicon nitride (SiN) nanomechanical resonators by electrical excitation of metal-dielectric-semiconductor (MDS) capacitors on their supporting silicon substrate. We develop first-principle models explaining this actuation mechanism by acoustic waves resulting from voltage-dependent electrostatic forces in the MDS capacitors. Models are developed for actuation in the ch…
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We observe the actuation of silicon nitride (SiN) nanomechanical resonators by electrical excitation of metal-dielectric-semiconductor (MDS) capacitors on their supporting silicon substrate. We develop first-principle models explaining this actuation mechanism by acoustic waves resulting from voltage-dependent electrostatic forces in the MDS capacitors. Models are developed for actuation in the charge accumulation (Ni-pSi) and charge depletion (Al-pSi) regimes. Experimental observations confirm our prediction that charge accumulation (Ni-pSi) is more efficient at actuation than charge depletion. For a 2 V actuation signal, Ni-pSi capacitors achieve 10 nm actuation amplitude in square (1.7 $\times$ 1.7 mm) low-stress (~100 MPa) SiN membrane resonators. In this case, electrical power dissipation in the chip is on the order of 0.1 $μ$W, and spurious heating is less than 1 mK. Both these values could be further reduced by do** the substrate to minimize resistive dissipation. The actuation method is remarkably simple and only requires attachment of wires to the chip with vacuum-compatible nickel paste, with no extra photolithography step. All the chips presented in this work are fabricated in-house, and a detailed fabrication procedure is provided.
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Submitted 16 December, 2021;
originally announced December 2021.
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Heat Transport in Silicon Nitride Drum Resonators and its Influence on Thermal Fluctuation-induced Frequency Noise
Authors:
Nikaya Snell,
Chang Zhang,
Gengyang Mu,
Alexandre Bouchard,
Raphael St-Gelais
Abstract:
Silicon nitride (SiN) drumhead resonators offer a promising platform for thermal sensing due to their high mechanical quality factor and the high temperature sensitivity of their resonance frequency. As such, gaining an understanding of heat transport in SiN resonators as well as their sensing noise limitations is of interest, both of which are goals of the present work. We first present new exper…
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Silicon nitride (SiN) drumhead resonators offer a promising platform for thermal sensing due to their high mechanical quality factor and the high temperature sensitivity of their resonance frequency. As such, gaining an understanding of heat transport in SiN resonators as well as their sensing noise limitations is of interest, both of which are goals of the present work. We first present new experimental results on radiative heat transport in SiN membrane, which we use for benchmarking two recently proposed theoretical models. We measure the characteristic thermal response time of square SiN membranes with a thickness of 90 $\pm$ 1.7 nm and side lengths from 1.5 to 12 mm. A clear transition between radiation and conduction dominated heat transport is measured, in close correspondence with theory. In the second portion of this work, we use our experimentally validated heat transport model to provide a closed-form expression for thermal fluctuation-induced frequency noise in SiN membrane resonators. We find that, for large area SiN membranes, thermal fluctuations can be greater than thermomechanical contributions to frequency noise. For the specific case of thermal radiation sensing applications, we also derive the noise equivalent power resulting from thermal fluctuation-induced frequency noise, and we show in which conditions it reduces to the classical detectivity limit of thermal radiation sensors. Our work therefore provides a path towards achieving thermal radiation sensors operating at the never attained fundamental detectivity limit of bolometric sensing. We also identify questions that remain when attempting to push the limits of radiation sensing, in particular, the effect of thermal fluctuation noise in closed-loop frequency tracking schemes remains to be clarified.
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Submitted 11 November, 2021; v1 submitted 30 September, 2021;
originally announced October 2021.
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High Resolution Measurement of Near-Field Radiative Heat Transfer enabled by Nanomechanical Resonators
Authors:
Mathieu Giroux,
Chang Zhang,
Nikaya Snell,
Gengyang Mu,
Michel Stephan,
Raphael St-Gelais
Abstract:
Near-field radiative heat transfer (NFHT) research currently suffers from an imbalance between numerous theoretical studies, as opposed to experimental reports that remain, in proportion, relatively scarce. Existing experimental platforms all rely on unique custom-built devices on which it is difficult to integrate new materials and structures for studying the breadth of theoretically proposed phe…
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Near-field radiative heat transfer (NFHT) research currently suffers from an imbalance between numerous theoretical studies, as opposed to experimental reports that remain, in proportion, relatively scarce. Existing experimental platforms all rely on unique custom-built devices on which it is difficult to integrate new materials and structures for studying the breadth of theoretically proposed phenomena. Here we show high-resolution NFHT measurements using, as our sensing element, silicon nitride (SiN) freestanding nanomembranes$-$a widely available platform routinely used in materials and cavity optomechanics research. We measure NFHT by tracking the high mechanical quality (Q) factor ($>2\times10^6$) resonance of a membrane placed in the near-field of a hemispherical hot object. We find that high Q-factor enables a temperature resolution ($1.2\times10^{-6} \ \mathrm{K}$) that is unparalleled in previous NFHT experiments. Results are in good agreement with a custom-built model combining heat transport in nanomembranes and the effect of non-uniform stress/temperature on the resonator eigenmodes.
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Submitted 17 June, 2021;
originally announced June 2021.
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Electron and Hole Injection via Charge Transfer at the Topological-Insulator $Bi_{2-x}Sb_xTe_{3-y}Se_y$/Organic-Molecule Interface
Authors:
Yoichi Tanabe,
Khuong Kim Huynh,
Ryo Nouchi,
Satoshi Heguri,
Gang Mu,
**gtao Xu,
Hidekazu Shimotani,
Katsumi Tanigaki
Abstract:
As a methodology for controlling the carrier transport of topological insulators (TI's), a flexible tuning in carrier number on the surface states (SS's) of three dimensional TI's by surface modifications using organic molecules is described. The principle of the carrier tuning and its type conversion of TI's presented in this research are based on the charge transfer of holes or electrons at the…
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As a methodology for controlling the carrier transport of topological insulators (TI's), a flexible tuning in carrier number on the surface states (SS's) of three dimensional TI's by surface modifications using organic molecules is described. The principle of the carrier tuning and its type conversion of TI's presented in this research are based on the charge transfer of holes or electrons at the TI/organic molecule interface. By employing 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) as an electron acceptor or tetracyanoquinodimethane (TCNQ) as a donor for n- and p- Bi2-xSbxTe3-ySey (BSTS) single crystals, successful carrier conversion from n to p and its reverse mode is demonstrated depending on the electron affinities of the molecules. The present method provides a nondestructive and efficient method for local tuning in carrier density of TI's, and is useful for future applications.
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Submitted 21 February, 2014;
originally announced February 2014.
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Strategies used as spectroscopy of financial markets reveal new stylized facts
Authors:
Wei-Xing Zhou,
Guo-Hua Mu,
Wei Chen,
Didier Sornette
Abstract:
We propose a new set of stylized facts quantifying the structure of financial markets. The key idea is to study the combined structure of both investment strategies and prices in order to open a qualitatively new level of understanding of financial and economic markets. We study the detailed order flow on the Shenzhen Stock Exchange of China for the whole year of 2003. This enormous dataset allows…
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We propose a new set of stylized facts quantifying the structure of financial markets. The key idea is to study the combined structure of both investment strategies and prices in order to open a qualitatively new level of understanding of financial and economic markets. We study the detailed order flow on the Shenzhen Stock Exchange of China for the whole year of 2003. This enormous dataset allows us to compare (i) a closed national market (A-shares) with an international market (B-shares), (ii) individuals and institutions and (iii) real investors to random strategies with respect to timing that share otherwise all other characteristics. We find that more trading results in smaller net return due to trading frictions. We unveiled quantitative power laws with non-trivial exponents, that quantify the deterioration of performance with frequency and with holding period of the strategies used by investors. Random strategies are found to perform much better than real ones, both for winners and losers. Surprising large arbitrage opportunities exist, especially when using zero-intelligence strategies. This is a diagnostic of possible inefficiencies of these financial markets.
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Submitted 18 April, 2011;
originally announced April 2011.
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Relaxation dynamics of aftershocks after large volatility shocks in the SSEC index
Authors:
Guo-Hua Mu,
Wei-Xing Zhou
Abstract:
The relaxation dynamics of aftershocks after large volatility shocks are investigated based on two high-frequency data sets of the Shanghai Stock Exchange Composite (SSEC) index. Compared with previous relevant work, we have defined main financial shocks based on large volatilities rather than large crashes. We find that the occurrence rate of aftershocks with the magnitude exceeding a given thr…
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The relaxation dynamics of aftershocks after large volatility shocks are investigated based on two high-frequency data sets of the Shanghai Stock Exchange Composite (SSEC) index. Compared with previous relevant work, we have defined main financial shocks based on large volatilities rather than large crashes. We find that the occurrence rate of aftershocks with the magnitude exceeding a given threshold for both daily volatility (constructed using 1-minute data) and minutely volatility (using intra-minute data) decays as a power law. The power-law relaxation exponent increases with the volatility threshold and is significantly greater than 1. Taking financial volatility as the counterpart of seismic activity, the power-law relaxation in financial volatility deviates remarkably from the Omori law in Geophysics.
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Submitted 8 September, 2007;
originally announced September 2007.
