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Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors
Authors:
Di Wu,
Wei Li,
Amritesh Rai,
Xiaoyu Wu,
Hema C. P. Movva,
Maruthi N. Yogeesh,
Zhaodong Chu,
Sanjay K. Banerjee,
Deji Akinwande,
Keji Lai
Abstract:
The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical i…
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The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical imaging on gated molybdenum disulfide (MoS2)/tungsten diselenide (WSe2) heterostructure devices, which exhibit an intriguing anti-ambipolar effect in the transfer characteristics. Interestingly, in the region with significant source-drain current, electrons in the n-type MoS2 and holes in the p-type WSe2 segments are nearly balanced, whereas the heterostructure area is depleted of mobile charges. The configuration is analogous to the p-i-n diode, where the injected carriers dominate in the recombination current. The spatial evolution of local conductance can be ascribed to the lateral band bending and formation of depletion regions along the line of MoS2-heterostructure-WSe2. Our work vividly demonstrates the microscopic origin of novel transport behaviors, which is important for the vibrant field of vdW heterojunction research.
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Submitted 21 February, 2019;
originally announced February 2019.
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Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators
Authors:
Tanuj Trivedi,
Anupam Roy,
Hema C. P. Movva,
Emily S. Walker,
Seth R. Bank,
Dean P. Neikirk,
Sanjay K. Banerjee
Abstract:
As the focus of applied research in topological insulators (TI) evolves, the need to synthesize large-area TI films for practical device applications takes center stage. However, constructing scalable and adaptable processes for high-quality TI compounds remains a challenge. To this end, a versatile van der Waals epitaxy (vdWE) process for custom-feature Bismuth Telluro-Sulfide TI growth and fabri…
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As the focus of applied research in topological insulators (TI) evolves, the need to synthesize large-area TI films for practical device applications takes center stage. However, constructing scalable and adaptable processes for high-quality TI compounds remains a challenge. To this end, a versatile van der Waals epitaxy (vdWE) process for custom-feature Bismuth Telluro-Sulfide TI growth and fabrication is presented, achieved through selective-area fluorination and modification of surface free-energy on mica. The TI features grow epitaxially in large single-crystal trigonal domains, exhibiting armchair or zigzag crystalline edges highly oriented with the underlying mica lattice and only two preferred domain orientations mirrored at $180^\circ$. As-grown feature thickness dependence on lateral dimensions and denuded zones at boundaries are observed, as explained by a semi-empirical two-species surface migration model with robust estimates of growth parameters and elucidating the role of selective-area surface modification. Topological surface states contribute up to 60% of device conductance at room-temperature, indicating excellent electronic quality. High-yield microfabrication and the adaptable vdWE growth mechanism with readily alterable precursor and substrate combinations, lend the process versatility to realize crystalline TI synthesis in arbitrary shapes and arrays suitable for facile integration with processes ranging from rapid prototy** to scalable manufacturing.
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Submitted 16 July, 2017;
originally announced July 2017.
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Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy
Authors:
Tanmoy Pramanik,
Anupam Roy,
Rik Dey,
Amritesh Rai,
Samaresh Guchhait,
Hema CP Movva,
Cheng-Chih Hsieh,
Sanjay K Banerjee
Abstract:
We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitativ…
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We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.
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Submitted 8 May, 2017;
originally announced May 2017.
