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Silicon Photonics DWDM NLFT Soliton Transmitter
Authors:
Jonas Koch,
Alvaro Moscoso-Mártir,
Juliana Müller,
Florian Merget,
Stephan Pachnicke,
Jeremy Witzens
Abstract:
We investigate the transmission of densely multiplexed solitons using a photonic integrated chip and the nonlinear Fourier-transform and analyze required launch conditions, the effect of (de-)multiplexing and noise on the nonlinear spectrum, and equalization techniques that can be used to enhance the transmission performance.
We investigate the transmission of densely multiplexed solitons using a photonic integrated chip and the nonlinear Fourier-transform and analyze required launch conditions, the effect of (de-)multiplexing and noise on the nonlinear spectrum, and equalization techniques that can be used to enhance the transmission performance.
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Submitted 7 April, 2020;
originally announced April 2020.
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Semiconductor laser mode locking stabilization with optical feedback from a silicon PIC
Authors:
Johannes Hauck,
Andrea Zazzi,
Alexandre Garreau,
François Lelarge,
Alvaro Moscoso-Mártir,
Florian Merget,
Jeremy Witzens
Abstract:
Semiconductor mode-locked lasers can be used in a variety of applications ranging from multi-carrier sources for WDM communication systems to time base references for metrology. Their packaging in compact chip- or module-level systems remains however burdened by their strong sensitivity to back-reflections, quickly destroying the coherence of the mode-locking. Here, we investigate the stabilizatio…
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Semiconductor mode-locked lasers can be used in a variety of applications ranging from multi-carrier sources for WDM communication systems to time base references for metrology. Their packaging in compact chip- or module-level systems remains however burdened by their strong sensitivity to back-reflections, quickly destroying the coherence of the mode-locking. Here, we investigate the stabilization of mode-locked lasers directly edge coupled to a silicon photonic integrated circuit, with the objective of moving isolators downstream to the output of the photonic circuit. A 2.77 kHz 3 dB RF linewidth, substantially improved compared to the 15.01 kHz of the free running laser, is obtained in the best case. Even in presence of detrimental reflections from the photonic circuit, substantial linewidth reductions from 20 kHz to 8.82 kHz, from 572 kHz to 14.8 kHz, and from 1.5 MHz to 40 kHz are realized.
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Submitted 14 May, 2019; v1 submitted 30 October, 2018;
originally announced December 2018.
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Broadband, Temperature Tolerant and Passively Biased Resonantly Enhanced Mach-Zehnder Modulators
Authors:
S. Romero-García,
A. Moscoso-Mártir,
J. Nojic,
S. Sharif-Azadeh,
J. Müller,
B. Shen,
F. Merget,
J. Witzens
Abstract:
We describe a resonantly enhanced Mach-Zehnder modulator (MZM) that can be operated over a wide temperature range of 55C without being actively biased, while providing a significant resonant enhancement of 6.8 at the nominal wavelength / temperature compared to a linear MZM driven with a distributed driver. More importantly, it enables a ~20X improvement in power consumption compared to a 50 Ω mat…
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We describe a resonantly enhanced Mach-Zehnder modulator (MZM) that can be operated over a wide temperature range of 55C without being actively biased, while providing a significant resonant enhancement of 6.8 at the nominal wavelength / temperature compared to a linear MZM driven with a distributed driver. More importantly, it enables a ~20X improvement in power consumption compared to a 50 Ω matched linear traveling wave modulator with comparable phase shifter technology, drive voltage and output optical modulation amplitude. Passive biasing of the Mach-Zehnder interferometer is further implemented by replacing a splitter element in the MZM with a novel device combining splitting and fiber coupling functionalities in a single, multi-modal structure, that converts permanent fiber placement into a phase correction. Both concepts are combined in a single modulator device, removing the need for any type of active control in a wide temperature operation range.
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Submitted 31 October, 2018;
originally announced December 2018.
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Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser
Authors:
Alvaro Moscoso-Mártir,
Juliana Müller,
Johannes Hauck,
Nicolas Chimot,
Rony Setter,
Avner Badihi,
Daniel E. Rasmussen,
Alexandre Garreau,
Mads Nielsen,
Elmira Islamova,
Sebastián Romero-García,
Bin Shen,
Anna Sandomirsky,
Sylvie Rockman,
Chao Li,
Saeed Sharif Azadeh,
Guo-Qiang Lo,
Elad Mentovich,
Florian Merget,
François Lelarge,
Jeremy Witzens
Abstract:
We demonstrate a complete Silicon Photonics WDM link relying on a single section semiconductor mode-locked laser and a single SOA to support up to 12 multiplexed channels with a bit error rate of 1e-12 at serial data rates of 14 Gbps without channel pre-emphasis, equalization or forward error correction. Individual channels reach error free operation at 25 Gbps and multi-channel operation at 25 Gb…
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We demonstrate a complete Silicon Photonics WDM link relying on a single section semiconductor mode-locked laser and a single SOA to support up to 12 multiplexed channels with a bit error rate of 1e-12 at serial data rates of 14 Gbps without channel pre-emphasis, equalization or forward error correction. Individual channels reach error free operation at 25 Gbps and multi-channel operation at 25 Gbps is shown to be compatible with standard 7% overhead hard decision forward error correction. Silicon Photonics transmitter and receiver chips are hybridly integrated with driver and receiver electronics. A detailed link model is derived and verified. Particular emphasis is placed on accurate system level modeling of laser RIN, SOA amplified spontaneous emission noise and receiver noise. The impact of the electrical receiver bandwidth and non-Gaussian statistics on level dependent amplified spontaneous emission noise are investigated in detail. The channel count scalability as limited by SOA saturation is further analyzed taking cross gain modulation and four wave mixing into account. While semiconductor mode-locked lasers have been identified as a potential light source for low cost Datacom WDM transceivers for some time, this is, to the best of our knowledge, the first comprehensive investigation of the overall link budget in a Silicon Photonics implementation showing this technology to be a credible contender for low latency datacenter interconnects.
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Submitted 27 May, 2016;
originally announced May 2016.
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High Speed WDM Interconnect Using Silicon Photonics Ring Modulators and Mode-Locked Laser
Authors:
Juliana Müller,
Johannes Hauck,
Alvaro Moscoso-Mártir,
Nicolas Chimot,
Sebastian Romero-García,
Bin Shen,
Florian Merget,
François Lelarge,
Jeremy Witzens
Abstract:
We demonstrate an 8 by 14 Gbps compatible WDM link based on a single-section semiconductor mode-locked laser, silicon photonics resonant ring modulators and joint channel reamplification with a semiconductor optical amplifier operated in the linear regime. Individual channels reach a data rate of 25 Gbps with signal quality-factors above 7.
We demonstrate an 8 by 14 Gbps compatible WDM link based on a single-section semiconductor mode-locked laser, silicon photonics resonant ring modulators and joint channel reamplification with a semiconductor optical amplifier operated in the linear regime. Individual channels reach a data rate of 25 Gbps with signal quality-factors above 7.
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Submitted 26 October, 2015;
originally announced October 2015.
