RD50-MPW3: A fully monolithic digital CMOS sensor for future tracking detectors
Authors:
Patrick Sieberer,
Chenfan Zhang,
Thomas Bergauer,
Raimon Casanova Mohr,
Christian Irmler,
Nissar Karim,
Jose Mazorra de Cos,
Bernhard Pilsl,
Eva Vilella
Abstract:
The CERN-RD50 CMOS working group develops the RD50-MPWseries of monolithic high-voltage CMOS pixel sensors for potential use in future high luminosity experiments such as the HL-LHC and FCC-hh. In this contribution, the design of the latest prototype in this series, RD50-MPW3, is presented. An overview of its pixel matrix and digital readout periphery is given, with discussion of the new structure…
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The CERN-RD50 CMOS working group develops the RD50-MPWseries of monolithic high-voltage CMOS pixel sensors for potential use in future high luminosity experiments such as the HL-LHC and FCC-hh. In this contribution, the design of the latest prototype in this series, RD50-MPW3, is presented. An overview of its pixel matrix and digital readout periphery is given, with discussion of the new structures implemented in the chip and the problems they aim to solve. The main analog and digital features of the sensor are already tested and initial laboratory characterisation of the chip is presented.
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Submitted 17 January, 2023; v1 submitted 21 November, 2022;
originally announced November 2022.
Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade
Authors:
Moritz Kiehn,
Francesco Armando Di Bello,
Mathieu Benoit,
Raimon Casanova Mohr,
Hucheng Chen,
Kai Chen,
Sultan D. M. S.,
Felix Ehrler,
Didier Ferrere,
Dylan Frizell,
Sergio Gonzalez Sevilla,
Giuseppe Iacobucci,
Francesco Lanni,
Hongbin Liu,
Claudia Merlassino,
Jessica Metcalfe,
Antonio Miucci,
Ivan Peric,
Mridula Prathapan,
Rudolf Schimassek,
Mateus Vicente Barreto,
Thomas Weston,
Eva Vilella Figueras,
Alena Weber,
Michele Weber
, et al. (5 additional authors not shown)
Abstract:
Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achie…
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Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of $10^{15}~\text{n}_\text{eq}/\text{cm}^2$ and detection efficiencies above $99.5~\%$. Recently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.
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Submitted 8 June, 2020; v1 submitted 16 July, 2018;
originally announced July 2018.
