Edge-based 2D alpha-In2Se3-MoS2 ferroelectric field effect device
Authors:
Debopriya Dutta,
Subhrajit Mukherjee,
Michael Uzhansky,
Pranab K. Mohapatra,
Ariel Ismach,
Elad Koren
Abstract:
Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterparts. Herein ferroelectric polarization switching in alpha-In2Se3 has been utilized to engineer multilevel non-volatile conduction states in partially overlap** alpha-In2Se3-MoS2 based ferroelectric semiconducting field…
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Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterparts. Herein ferroelectric polarization switching in alpha-In2Se3 has been utilized to engineer multilevel non-volatile conduction states in partially overlap** alpha-In2Se3-MoS2 based ferroelectric semiconducting field effect device. In particular, we demonstrate how the intercoupled ferroelectric nature of alpha-In2Se3 allows to non-volatilely switch between n-i and n-i-n type junction configurations based on a novel edge state actuation mechanism, paving the way for sub-nanometric scale non-volatile device miniaturization. Furthermore the induced asymmetric polarization enables enhanced photogenerated carriers separation resulting in extremely high photoresponse of 1275 AW-1 in the visible range and strong non-volatile modulation of the bright A- and B- excitonic emission channels in the overlaying MoS2 monolayer. Our results show significant potential to harness the switchable polarization in partially overlap** alpha-In2Se3-MoS2 based FeFETs to engineer multimodal non-volatile nanoscale electronic and optoelectronic devices.
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Submitted 2 January, 2023;
originally announced January 2023.
Growth-Etch Metal-Organic Chemical Vapor Deposition Approach of WS2 Atomic-Layers
Authors:
Assael Cohen,
Avinash Patsha,
Pranab K. Mohapatra,
Miri Kazes,
Kamalakannan Ranganathan,
Lothar Houben,
Dan Oron,
Ariel Ismach
Abstract:
Metal organic chemical vapor deposition (MOCVD) is one of the main methodologies used for thin film fabrication in the semiconductor industry today and is considered one of the most promising routes to achieve large-scale and high-quality 2D transition metal dichalcogenides (TMDCs). However, if not taken special measures, MOCVD suffers from some serious drawbacks, such as small domain size and car…
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Metal organic chemical vapor deposition (MOCVD) is one of the main methodologies used for thin film fabrication in the semiconductor industry today and is considered one of the most promising routes to achieve large-scale and high-quality 2D transition metal dichalcogenides (TMDCs). However, if not taken special measures, MOCVD suffers from some serious drawbacks, such as small domain size and carbon contamination, resulting in poor optical and crystal quality, which may inhibit its implementation for the large-scale fabrication of atomic-thin semiconductors. Here we present a Growth-Etch MOCVD (GE-MOCVD) methodology, in which a small amount of water vapor is introduced during the growth, while the precursors are delivered in pulses. The evolution of the growth as a function of the amount of water vapor, the number and type of cycles and the gas composition is described. We show a significant domain size increase is achieved relative to our conventional process. The improved crystal quality of WS2 (and WSe2) domains was demonstrated by means of Raman spectroscopy, photoluminescence (PL) spectroscopy and HRTEM studies. Moreover, time-resolved PL studies show very long exciton lifetimes, comparable to those observed in mechanically exfoliated flakes. Thus, the GE-MOCVD approach presented here may facilitate their integration into a wide range of applications.
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Submitted 8 December, 2020; v1 submitted 17 August, 2020;
originally announced August 2020.
