Technological implementation of a photonic Bier-Glass cavity
Authors:
Jonathan Jurkat,
Magdalena Moczała-Dusanowska,
Martin Arentoft Jacobsen,
Ana Predojević,
Tobias Huber,
Niels Gregersen,
Sven Höfling,
Christian Schneider
Abstract:
In this paper, we introduce a novel quantum photonic device, which we term photonic Bier-Glass cavity. We discuss its fabrication and functionality, which is based on the coupling of integrated In(Ga)As quantum dots to a broadband photonic cavity resonance. By design, the device architecture uniquely combines the Purcell enhancement of a photonic micropillar structure with broadband photonic mode…
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In this paper, we introduce a novel quantum photonic device, which we term photonic Bier-Glass cavity. We discuss its fabrication and functionality, which is based on the coupling of integrated In(Ga)As quantum dots to a broadband photonic cavity resonance. By design, the device architecture uniquely combines the Purcell enhancement of a photonic micropillar structure with broadband photonic mode sha** of a vertical, tapered waveguide, making it an interesting candidate to enable the efficient extraction of entangled photon pairs. We detail the epitaxial growth of the heterostructure and the necessary lithography steps to approach a GaAs-based photonic device with a height exceeding 15 $μ$m, supported on a pedestal that can be as thin as 20 nm. We present an optical characterization, which confirms the presence of broadband optical resonances, in conjunction with amplified spontaneous emission of single photons.
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Submitted 23 September, 2020;
originally announced September 2020.
Strain-tunable Single Photon Sources in WSe2 Monolayers
Authors:
Oliver Iff,
Davide Tedeschi,
Javier Martín-Sánchez,
Magdalena Moczała-Dusanowska,
Sefaattin Tongay,
Kentaro Yumigeta,
Javier Taboada-Gutiérrez,
Matteo Savaresi,
Armando Rastelli,
Pablo Alonso-González,
Sven Höfling,
Rinaldo Trotta,
Christian Schneider
Abstract:
The appearance of single photon sources in atomically thin semiconductors holds great promises for the development of a flexible and ultra-compact quantum technology, in which elastic strain engineering can be used to tailor their emission properties. Here, we show a compact and hybrid 2D-semiconductor-piezoelectric device that allows for controlling the energy of single photons emitted by quantum…
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The appearance of single photon sources in atomically thin semiconductors holds great promises for the development of a flexible and ultra-compact quantum technology, in which elastic strain engineering can be used to tailor their emission properties. Here, we show a compact and hybrid 2D-semiconductor-piezoelectric device that allows for controlling the energy of single photons emitted by quantum emitters localized in wrinkled WSe2 monolayers. We demonstrate that strain fields exerted by the piezoelectric device can be used to tune the energy of localized excitons in WSe2 up to 18 meV in a reversible manner, while leaving the single photon purity unaffected over a wide range. Interestingly, we find that the magnitude and in particular the sign of the energy shift as a function of stress is emitter dependent. With the help of finite element simulations we suggest a simple model that explains our experimental observations and, furthermore, discloses that the type of strain (tensile or compressive) experienced by the quantum emitters strongly depends on their localization across the wrinkles. Our findings are of strong relevance for the practical implementation of single photon devices based on two-dimensional materials as well as for understanding the effects of strain on their emission properties.
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Submitted 4 September, 2019;
originally announced September 2019.
