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Highly-Sensitive Resonance-Enhanced Organic Photodetectors for Shortwave Infrared Sensing
Authors:
Hoang Mai Luong,
Chokchai Kaiyasuan,
Ahra Yi,
Sangmin Chae,
Brian Minki Kim,
Patchareepond Panoy,
Hyo Jung Kim,
Vinich Promarak,
Yasuo Miyata,
Hidenori Nakayama,
Thuc-Quyen Nguyen
Abstract:
Shortwave infrared (SWIR) has various applications, including night vision, remote sensing, and medical imaging. SWIR organic photodetectors (OPDs) offer advantages such as flexibility, cost-effectiveness, and tunable properties, however, lower sensitivity and limited spectral coverage compared to inorganic counterparts are major drawbacks. Here, we propose a simple yet effective and widely applic…
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Shortwave infrared (SWIR) has various applications, including night vision, remote sensing, and medical imaging. SWIR organic photodetectors (OPDs) offer advantages such as flexibility, cost-effectiveness, and tunable properties, however, lower sensitivity and limited spectral coverage compared to inorganic counterparts are major drawbacks. Here, we propose a simple yet effective and widely applicable strategy to extend the wavelength detection range of OPD to a longer wavelength, using resonant optical microcavity. We demonstrate a proof-of-concept in PTB7-Th:COTIC-4F blend system, achieving external quantum efficiency (EQE) > 50 % over a broad spectrum 450 - 1100 nm with a peak specific detectivity (D*) of 1.1E13 Jones at 1100 nm, while cut-off bandwidth, speed, and linearity are preserved. By employing a novel small-molecule acceptor IR6, a record high EQE = 35 % and D* = 4.1E12 Jones are obtained at 1150 nm. This research emphasizes the importance of optical design in optoelectronic devices, presenting a considerably simpler method to expand the photodetection range compared to a traditional approach that involves develo** absorbers with narrow optical gaps.
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Submitted 13 September, 2023;
originally announced September 2023.
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Effect of incoherent electron-hole pairs on high harmonic generation in an atomically thin semiconductor
Authors:
Kohei Nagai,
Kento Uchida,
Satoshi Kusaba,
Takahiko Endo,
Yasumitsu Miyata,
Koichiro Tanaka
Abstract:
High harmonic generation (HHG) in solids reflects the underlying nonperturbative nonlinear dynamics of electrons in a strong light field and is a powerful tool for ultrafast spectroscopy of electronic structures. Photo-carrier do** allows us to understand the carrier dynamics and the correlations between the carriers in the HHG process. Here, we study the effect of incoherent electron-hole pairs…
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High harmonic generation (HHG) in solids reflects the underlying nonperturbative nonlinear dynamics of electrons in a strong light field and is a powerful tool for ultrafast spectroscopy of electronic structures. Photo-carrier do** allows us to understand the carrier dynamics and the correlations between the carriers in the HHG process. Here, we study the effect of incoherent electron-hole pairs on HHG in an atomically thin semiconductor. The experimentally observed response to photo-carrier do** is successfully reproduced in numerical simulations incorporating the photo-excited carrier distribution, excitonic Coulomb interaction and electron-electron scattering effects. The simulation results reveal that the presence of photo-carriers enhances the intraband current that contributes to high harmonics below the absorption edge. We also clarify that the excitation-induced dephasing process rather than the phase-space filling effect is the dominant mechanism reducing the higher order harmonics above the absorption edge. Our work provides a deeper understanding of high harmonic spectroscopy and the optimum conditions for generating extreme ultraviolet light from solids.
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Submitted 10 September, 2023; v1 submitted 24 December, 2021;
originally announced December 2021.
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Dynamical symmetry of strongly light-driven electronic system in crystalline solids
Authors:
Kohei Nagai,
Kento Uchida,
Naotaka Yoshikawa,
Takahiko Endo,
Yasumitsu Miyata,
Koichiro Tanaka
Abstract:
The Floquet state, which is a periodically and intensely light driven quantum state in solids, has been attracting attention as a novel state that is coherently controllable on an ultrafast time scale. An important issue has been to demonstrate experimentally novel electronic properties in the Floquet state. One technique to demonstrate them is the light scattering spectroscopy, which offers an im…
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The Floquet state, which is a periodically and intensely light driven quantum state in solids, has been attracting attention as a novel state that is coherently controllable on an ultrafast time scale. An important issue has been to demonstrate experimentally novel electronic properties in the Floquet state. One technique to demonstrate them is the light scattering spectroscopy, which offers an important clue to clarifying the symmetries and energy structures of the states through symmetry analysis of the polarization selection rules. Here, we determine circular and linear polarization selection rules of light scattering in a mid-infrared-driven Floquet system in monolayer MoS2 and provide a comprehensive understanding in terms of the "dynamical symmetry" of the Floquet state.
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Submitted 16 March, 2020;
originally announced March 2020.
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Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
Authors:
Sachin Gupta,
F. Rortais,
R. Ohshima,
Y. Ando,
T. Endo,
Y. Miyata,
M. Shiraishi
Abstract:
Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 chan…
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Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 channels were directly grown on SiO2/Si substrate via chemical vapor deposition technique. The increase in current with back gate voltage shows the tunability of FET characteristics. The Schottky barrier height (SBH) estimated for Py/MoS2 contacts is found to be +28.8 meV (zero-bias), which is the smallest value reported so-far for any direct metal (magnetic or non-magnetic)/monolayer MoS2 contact. With the application of gate voltage (+10 V), SBH shows a drastic reduction down to a value of -6.8 meV. The negative SBH reveals ohmic behavior of Py/MoS2 contacts. Low SBH with controlled ohmic nature of FM contacts is a primary requirement for MoS2 based spintronics and therefore using directly grown MoS2 channels in the present study can pave a path towards high performance devices for large scale applications.
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Submitted 12 September, 2019;
originally announced September 2019.
