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Enhancing Membrane-Based Scanning Force Microscopy Through an Optical Cavity
Authors:
Thomas Gisler,
David Hälg,
Vincent Dumont,
Shobhna Misra,
Letizia Catalini,
Eric C. Langman,
Albert Schliesser,
Christian L. Degen,
Alexander Eichler
Abstract:
The new generation of strained silicon nitride resonators harbors great promise for scanning force microscopy, especially when combined with the extensive toolbox of cavity optomechanics. However, accessing a mechanical resonator inside an optical cavity with a scanning tip is challenging. Here, we experimentally demonstrate a cavity-based scanning force microscope based on a silicon nitride membr…
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The new generation of strained silicon nitride resonators harbors great promise for scanning force microscopy, especially when combined with the extensive toolbox of cavity optomechanics. However, accessing a mechanical resonator inside an optical cavity with a scanning tip is challenging. Here, we experimentally demonstrate a cavity-based scanning force microscope based on a silicon nitride membrane sensor. We overcome geometric constraints by making use of the extended nature of the mechanical resonator normal modes, which allows us to spatially separate the scanning and readout sites of the membrane. Our microscope is geared towards low-temperature applications in the zeptonewton regime, such as nanoscale nuclear spin detection and imaging.
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Submitted 11 June, 2024;
originally announced June 2024.
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Generating Subsurface Earth Models using Discrete Representation Learning and Deep Autoregressive Network
Authors:
Jungang Chen,
Chung-Kan Huang,
Jose F. Delgado,
Siddharth Misra
Abstract:
Subsurface earth models (referred to as geo-models) are crucial for characterizing complex subsurface systems. Multiple-point statistics are commonly used to generate geo-models. In this paper, a deep-learning-based generative method is developed as an alternative to the traditional Geomodel generation procedure. The generative method comprises two deep-learning models, namely the hierarchical vec…
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Subsurface earth models (referred to as geo-models) are crucial for characterizing complex subsurface systems. Multiple-point statistics are commonly used to generate geo-models. In this paper, a deep-learning-based generative method is developed as an alternative to the traditional Geomodel generation procedure. The generative method comprises two deep-learning models, namely the hierarchical vector-quantized variational autoencoder (VQ-VAE-2) and PixelSNAIL autoregressive model. Based on the principle of neural discrete representation learning, the VQ-VAE-2 learns to massively compress the Geomodels to extract the low-dimensional, discrete latent representation corresponding to each Geomodel. Following that, PixelSNAIL uses the deep autoregressive network to learn the prior distribution of the latent codes. For the purpose of Geomodel generation, PixelSNAIL samples from the newly learned prior distribution of latent codes, and then the decoder of the VQ-VAE-2 converts the newly sampled latent code to a newly constructed geo-model. PixelSNAIL can be used for unconditional or conditional geo-model generation. In an unconditional generation, the generative workflow generates an ensemble of geo-models without any constraint. On the other hand, in the conditional geo-model generation, the generative workflow generates an ensemble of geo-models similar to a user-defined source image, which ultimately facilitates the control and manipulation of the generated geo-models. To better construct the fluvial channels in the geo-models, the perceptual loss is implemented in the VQ-VAE-2 model instead of the traditional mean squared error loss. At a specific compression ratio, the quality of multi-attribute geo-model generation is better than that of single-attribute geo-model generation.
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Submitted 6 February, 2023;
originally announced February 2023.
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Suppression of mid-infrared plasma resonance due to quantum confinement in delta-doped silicon
Authors:
Steve M. Young,
Aaron M. Katzenmeyer,
Evan M. Anderson,
Ting S. Luk,
Jeffrey A. Ivie,
Scott W. Schmucker,
Xujiao Gao,
Shashank Misra
Abstract:
The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:$δ$-layers - atomically thin sheets of phosphorus dopants in silicon that induce novel electronic properties beyond traditional do**. Previously it was shown that P:$δ$-layers pro…
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The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:$δ$-layers - atomically thin sheets of phosphorus dopants in silicon that induce novel electronic properties beyond traditional do**. Previously it was shown that P:$δ$-layers produce a distinct Drude tail feature in ellipsometry measurements. However, the ellipsometric spectra could not be properly fit by modeling the $δ$-layer as discrete layer of classical Drude metal. In particular, even for large broadening corresponding to extremely short relaxation times, a plasma resonance feature was anticipated but not evident in the experimental data. In this work, we develop a physically accurate description of this system, which reveals a general approach to designing thin films with intentionally suppressed plasma resonances. Our model takes into account the strong charge density confinement and resulting quantum mechanical description of a P:$δ$-layer. We show that the absence of a plasma resonance feature results from a combination of two factors: i), the sharply varying charge density profile due to strong confinement in the direction of growth; and ii), the effective mass and relaxation time anisotropy due to valley degeneracy. The plasma resonance reappears when the atoms composing the $δ$-layer are allowed to diffuse out from the plane of the layer, destroying its well-confined two-dimensional character that is critical to its novel electronic properties.
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Submitted 7 March, 2023; v1 submitted 19 October, 2022;
originally announced October 2022.
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Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen-Vacancy Diamond Magnetic Microscopy
Authors:
Luca Basso,
Pauli Kehayias,
Jacob Henshaw,
Maziar Saleh Ziabari,
Heejun Byeon,
Michael P. Lilly,
Ezra Bussmann,
Deanna M. Campbell,
Shashank Misra,
Andrew M. Mounce
Abstract:
The recently-developed ability to control phosphorous-do** of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include wh…
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The recently-developed ability to control phosphorous-do** of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and map** of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we performed nitrogen-vacancy (NV) wide-field magnetic imaging of stray magnetic fields from surface current densities flowing in an APAM test device over a mm-field of view with μm-resolution. To do this, we integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current density, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A/m, corresponding to a smallest detectable current in the 200 μm-wide APAM ribbon of ~6 μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.
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Submitted 28 July, 2022;
originally announced July 2022.
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Accelerated Lifetime Testing and Analysis of Delta-doped Silicon Test Structures
Authors:
Connor Halsey,
Jessica Depoy,
DeAnna M. Campbell,
Daniel R. Ward,
Evan M. Anderson,
Scott W. Schmucker,
Jeffrey A. Ivie,
Xujiao Gao,
David A. Scrymgeour,
Shashank Misra
Abstract:
As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped phosphorus layers with atomic precision has implications for the future of digital electronics. This work establishes the accelerated lifetime tests of s…
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As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped phosphorus layers with atomic precision has implications for the future of digital electronics. This work establishes the accelerated lifetime tests of such doped layers, showing that these materials survive high current (>3.0 MA/cm2) and 300$^{\circ}$C for greater than 70 days and are still electrically conductive. The doped layers compare well to failures in traditional metal layers like aluminum and copper where mean time to failure at these temperatures and current densities would occur within hours. It also establishes that these materials are more stable than metal features, paving the way toward their integration with operational CMOS.
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Submitted 24 February, 2022; v1 submitted 22 October, 2021;
originally announced October 2021.
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Strong parametric coupling between two ultra-coherent membrane modes
Authors:
David Hälg,
Thomas Gisler,
Eric C. Langman,
Shobhna Misra,
Oded Zilberberg,
Albert Schliesser,
Christian L. Degen,
Alexander Eichler
Abstract:
We demonstrate parametric coupling between two modes of a silicon nitride membrane. We achieve the coupling by applying an oscillating voltage to a sharp metal tip that approaches the membrane surface to within a few 100 nm. When the voltage oscillation frequency is equal to the mode frequency difference, the modes exchange energy periodically and much faster than their free energy decay rate. Thi…
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We demonstrate parametric coupling between two modes of a silicon nitride membrane. We achieve the coupling by applying an oscillating voltage to a sharp metal tip that approaches the membrane surface to within a few 100 nm. When the voltage oscillation frequency is equal to the mode frequency difference, the modes exchange energy periodically and much faster than their free energy decay rate. This flexible method can potentially be useful for rapid state control and transfer between modes, and is an important step towards parametric spin sensing experiments with membrane resonators.
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Submitted 24 September, 2021;
originally announced September 2021.
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Exponential Reduction in Sample Complexity with Learning of Ising Model Dynamics
Authors:
Arkopal Dutt,
Andrey Y. Lokhov,
Marc Vuffray,
Sidhant Misra
Abstract:
The usual setting for learning the structure and parameters of a graphical model assumes the availability of independent samples produced from the corresponding multivariate probability distribution. However, for many models the mixing time of the respective Markov chain can be very large and i.i.d. samples may not be obtained. We study the problem of reconstructing binary graphical models from co…
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The usual setting for learning the structure and parameters of a graphical model assumes the availability of independent samples produced from the corresponding multivariate probability distribution. However, for many models the mixing time of the respective Markov chain can be very large and i.i.d. samples may not be obtained. We study the problem of reconstructing binary graphical models from correlated samples produced by a dynamical process, which is natural in many applications. We analyze the sample complexity of two estimators that are based on the interaction screening objective and the conditional likelihood loss. We observe that for samples coming from a dynamical process far from equilibrium, the sample complexity reduces exponentially compared to a dynamical process that mixes quickly.
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Submitted 14 June, 2021; v1 submitted 2 April, 2021;
originally announced April 2021.
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Learning Continuous Exponential Families Beyond Gaussian
Authors:
Christopher X. Ren,
Sidhant Misra,
Marc Vuffray,
Andrey Y. Lokhov
Abstract:
We address the problem of learning of continuous exponential family distributions with unbounded support. While a lot of progress has been made on learning of Gaussian graphical models, we still lack scalable algorithms for reconstructing general continuous exponential families modeling higher-order moments of the data beyond the mean and the covariance. Here, we introduce a computationally effici…
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We address the problem of learning of continuous exponential family distributions with unbounded support. While a lot of progress has been made on learning of Gaussian graphical models, we still lack scalable algorithms for reconstructing general continuous exponential families modeling higher-order moments of the data beyond the mean and the covariance. Here, we introduce a computationally efficient method for learning continuous graphical models based on the Interaction Screening approach. Through a series of numerical experiments, we show that our estimator maintains similar requirements in terms of accuracy and sample complexity scalings compared to alternative approaches such as maximization of conditional likelihood, while considerably improving upon the algorithm's run-time.
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Submitted 26 February, 2022; v1 submitted 18 February, 2021;
originally announced February 2021.
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AlCl$_{3}$-dosed Si(100)-2$\times$1: Adsorbates, chlorinated Al chains, and incorporated Al
Authors:
Matthew S. Radue,
Sungha Baek,
Azadeh Farzaneh,
K. J. Dwyer,
Quinn Campbell,
Andrew D. Baczewski,
Ezra Bussmann,
George T. Wang,
Yifei Mo,
Shashank Misra,
R. E. Butera
Abstract:
The adsorption of AlCl$_{3}$ on Si(100) and the effect of annealing the AlCl$_{3}$-dosed substrate was studied to reveal key surface processes for the development of atomic-precision acceptor-do** techniques. This investigation was performed via scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. At room temperature, AlCl…
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The adsorption of AlCl$_{3}$ on Si(100) and the effect of annealing the AlCl$_{3}$-dosed substrate was studied to reveal key surface processes for the development of atomic-precision acceptor-do** techniques. This investigation was performed via scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. At room temperature, AlCl$_{3}$ readily adsorbed to the Si substrate dimers and dissociated to form a variety of species. Annealing of the AlCl$_{3}$-dosed substrate at temperatures below 450 $^{\circ}$C produced unique chlorinated aluminum chains (CACs) elongated along the Si(100) dimer row direction. An atomic model for the chains is proposed with supporting DFT calculations. Al was incorporated into the Si substrate upon annealing at 450 $^{\circ}$C and above, and Cl desorption was observed for temperatures beyond 450 $^{\circ}$C. Al-incorporated samples were encapsulated in Si and characterized by secondary ion mass spectrometry (SIMS) depth profiling to quantify the Al atom concentration, which was found to be in excess of 10$^{20}$ cm$^{-3}$ across a $\sim$2.7 nm thick $δ$-doped region. The Al concentration achieved here and the processing parameters utilized promote AlCl$_{3}$ as a viable gaseous precursor for novel acceptor-doped Si materials and devices for quantum computing.
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Submitted 22 January, 2021;
originally announced January 2021.
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Learning of Discrete Graphical Models with Neural Networks
Authors:
Abhijith J.,
Andrey Y. Lokhov,
Sidhant Misra,
Marc Vuffray
Abstract:
Graphical models are widely used in science to represent joint probability distributions with an underlying conditional dependence structure. The inverse problem of learning a discrete graphical model given i.i.d samples from its joint distribution can be solved with near-optimal sample complexity using a convex optimization method known as Generalized Regularized Interaction Screening Estimator (…
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Graphical models are widely used in science to represent joint probability distributions with an underlying conditional dependence structure. The inverse problem of learning a discrete graphical model given i.i.d samples from its joint distribution can be solved with near-optimal sample complexity using a convex optimization method known as Generalized Regularized Interaction Screening Estimator (GRISE). But the computational cost of GRISE becomes prohibitive when the energy function of the true graphical model has higher-order terms. We introduce NeurISE, a neural net based algorithm for graphical model learning, to tackle this limitation of GRISE. We use neural nets as function approximators in an Interaction Screening objective function. The optimization of this objective then produces a neural-net representation for the conditionals of the graphical model. NeurISE algorithm is seen to be a better alternative to GRISE when the energy function of the true model has a high order with a high degree of symmetry. In these cases NeurISE is able to find the correct parsimonious representation for the conditionals without being fed any prior information about the true model. NeurISE can also be used to learn the underlying structure of the true model with some simple modifications to its training procedure. In addition, we also show a variant of NeurISE that can be used to learn a neural net representation for the full energy function of the true model.
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Submitted 22 December, 2020; v1 submitted 21 June, 2020;
originally announced June 2020.
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Atomic Precision Advanced Manufacturing for Digital Electronics
Authors:
Daniel R. Ward,
Scott W. Schmucker,
Evan M. Anderson,
Ezra Bussmann,
Lisa Tracy,
Tzu-Ming Lu,
Leon N. Maurer,
Andrew Baczewski,
Deanna M. Campbell,
Michael T. Marshall,
Shashank Misra
Abstract:
An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex tools to fabricate and characterize the next generation of chips. However, the cost to develop and produce the next generation of these tools has also risen exponentially, to the point where the risk associated with progre…
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An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex tools to fabricate and characterize the next generation of chips. However, the cost to develop and produce the next generation of these tools has also risen exponentially, to the point where the risk associated with progressing to smaller feature sizes has created pain points throughout the ecosystem. The present challenge includes shrinking the smallest features from nanometers to atoms (10 nm corresponds to 30 silicon atoms). Relaxing the requirement for achieving scalable manufacturing creates the opportunity to evaluate ideas not one or two generations into the future, but at the absolute physical limit of atoms themselves. This article describes recent advances in atomic precision advanced manufacturing (APAM) that open the possibility of exploring opportunities in digital electronics. Doing so will require advancing the complexity of APAM devices and integrating APAM with CMOS.
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Submitted 25 February, 2020;
originally announced February 2020.
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Low Thermal Budget High-k/Metal Surface Gate for Buried Donor-Based Devices
Authors:
Evan M. Anderson,
DeAnna M. Campbell,
Leon N. Maurer,
Andrew D. Baczewski,
Michael T. Marshall,
Tzu-Ming Lu,
** Lu,
Lisa A. Tracy,
Scott W. Schmucker,
Daniel R. Ward,
Shashank Misra
Abstract:
Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the invest…
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Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the investigation of alternative fabrication paths that extend to the atomic scale. APAM donor devices can be created using a scanning tunneling microscope (STM). However, these devices are not currently compatible with industry standard fabrication processes. There exists a tradeoff between low thermal budget (LT) processes to limit dopant diffusion and high thermal budget (HT) processes to grow defect-free layers of epitaxial Si and gate oxide. To this end, we have developed an LT epitaxial Si cap and LT deposited Al2O3 gate oxide integrated with an atomically precise single-electron transistor (SET) that we use as an electrometer to characterize the quality of the gate stack. The surface-gated SET exhibits the expected Coulomb blockade behavior. However, the leverage of the gate over the SET is limited by defects in the layers above the SET, including interfaces between the Si and oxide, and structural and chemical defects in the Si cap. We propose a more sophisticated gate stack and process flow that is predicted to improve performance in future atomic precision devices.
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Submitted 11 June, 2020; v1 submitted 20 February, 2020;
originally announced February 2020.
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Quantum Simulators: Architectures and Opportunities
Authors:
Ehud Altman,
Kenneth R. Brown,
Giuseppe Carleo,
Lincoln D. Carr,
Eugene Demler,
Cheng Chin,
Brian DeMarco,
Sophia E. Economou,
Mark A. Eriksson,
Kai-Mei C. Fu,
Markus Greiner,
Kaden R. A. Hazzard,
Randall G. Hulet,
Alicia J. Kollar,
Benjamin L. Lev,
Mikhail D. Lukin,
Ruichao Ma,
Xiao Mi,
Shashank Misra,
Christopher Monroe,
Kater Murch,
Zaira Nazario,
Kang-Kuen Ni,
Andrew C. Potter,
Pedram Roushan
, et al. (12 additional authors not shown)
Abstract:
Quantum simulators are a promising technology on the spectrum of quantum devices from specialized quantum experiments to universal quantum computers. These quantum devices utilize entanglement and many-particle behaviors to explore and solve hard scientific, engineering, and computational problems. Rapid development over the last two decades has produced more than 300 quantum simulators in operati…
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Quantum simulators are a promising technology on the spectrum of quantum devices from specialized quantum experiments to universal quantum computers. These quantum devices utilize entanglement and many-particle behaviors to explore and solve hard scientific, engineering, and computational problems. Rapid development over the last two decades has produced more than 300 quantum simulators in operation worldwide using a wide variety of experimental platforms. Recent advances in several physical architectures promise a golden age of quantum simulators ranging from highly optimized special purpose simulators to flexible programmable devices. These developments have enabled a convergence of ideas drawn from fundamental physics, computer science, and device engineering. They have strong potential to address problems of societal importance, ranging from understanding vital chemical processes, to enabling the design of new materials with enhanced performance, to solving complex computational problems. It is the position of the community, as represented by participants of the NSF workshop on "Programmable Quantum Simulators," that investment in a national quantum simulator program is a high priority in order to accelerate the progress in this field and to result in the first practical applications of quantum machines. Such a program should address two areas of emphasis: (1) support for creating quantum simulator prototypes usable by the broader scientific community, complementary to the present universal quantum computer effort in industry; and (2) support for fundamental research carried out by a blend of multi-investigator, multi-disciplinary collaborations with resources for quantum simulator software, hardware, and education.
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Submitted 20 December, 2019; v1 submitted 14 December, 2019;
originally announced December 2019.
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All-optical lithography process for contacting atomically-precise devices
Authors:
Daniel R. Ward,
Michael T. Marshall,
DeAnna M. Campbell,
Tzu-Ming Lu,
Justin C. Koepke,
David A. Scrymgeour,
Ezra Bussmann,
Shashank Misra
Abstract:
We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a pat…
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We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.
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Submitted 8 August, 2017;
originally announced August 2017.
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Optimal structure and parameter learning of Ising models
Authors:
Andrey Y. Lokhov,
Marc Vuffray,
Sidhant Misra,
Michael Chertkov
Abstract:
Reconstruction of structure and parameters of an Ising model from binary samples is a problem of practical importance in a variety of disciplines, ranging from statistical physics and computational biology to image processing and machine learning. The focus of the research community shifted towards develo** universal reconstruction algorithms which are both computationally efficient and require…
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Reconstruction of structure and parameters of an Ising model from binary samples is a problem of practical importance in a variety of disciplines, ranging from statistical physics and computational biology to image processing and machine learning. The focus of the research community shifted towards develo** universal reconstruction algorithms which are both computationally efficient and require the minimal amount of expensive data. We introduce a new method, Interaction Screening, which accurately estimates the model parameters using local optimization problems. The algorithm provably achieves perfect graph structure recovery with an information-theoretically optimal number of samples, notably in the low-temperature regime which is known to be the hardest for learning. The efficacy of Interaction Screening is assessed through extensive numerical tests on synthetic Ising models of various topologies with different types of interactions, as well as on a real data produced by a D-Wave quantum computer. This study shows that the Interaction Screening method is an exact, tractable and optimal technique universally solving the inverse Ising problem.
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Submitted 26 December, 2017; v1 submitted 15 December, 2016;
originally announced December 2016.
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Polarization-tailored Fano interference in plasmonic crystals: A Mueller matrix model of anisotropic Fano resonance
Authors:
S. K. Ray,
S. Chandel,
A. K. Singh,
A. Kumar,
A. Mandal. S. Misra,
P. Mitra,
N. Ghosh
Abstract:
We present a simple yet elegant Mueller matrix approach for controlling the Fano interference effect and engineering the resulting asymmetric spectral line shape in anisotropic optical system. The approach is founded on a generalized model of anisotropic Fano resonance, which relates the spectral asymmetry to two physically meaningful and experimentally accessible parameters of interference, namel…
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We present a simple yet elegant Mueller matrix approach for controlling the Fano interference effect and engineering the resulting asymmetric spectral line shape in anisotropic optical system. The approach is founded on a generalized model of anisotropic Fano resonance, which relates the spectral asymmetry to two physically meaningful and experimentally accessible parameters of interference, namely, the Fano phase shift and the relative amplitudes of the interfering modes. The differences in these parameters between orthogonal linear polarizations in an anisotropic system are exploited to desirably tune the Fano spectral asymmetry using pre- and post-selection of optimized polarization states. Experimental control on the Fano phase and the relative amplitude parameters and resulting tuning of spectral asymmetry is demonstrated in waveguided plasmonic crystals using Mueller matrix-based polarization analysis. The approach enabled tailoring of several exotic regimes of Fano resonance including the complete reversal of the spectral asymmetry. The demonstrated control and the ensuing large tunability of Fano resonance in anisotropic systems shows potential for Fano resonance-based applications involving control and manipulation of electromagnetic waves at the nano scale.
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Submitted 19 September, 2016;
originally announced September 2016.
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Graphical Models for Optimal Power Flow
Authors:
Krishnamurthy Dvijotham,
Pascal Van Hentenryck,
Michael Chertkov,
Sidhant Misra,
Marc Vuffray
Abstract:
Optimal power flow (OPF) is the central optimization problem in electric power grids. Although solved routinely in the course of power grid operations, it is known to be strongly NP-hard in general, and weakly NP-hard over tree networks. In this paper, we formulate the optimal power flow problem over tree networks as an inference problem over a tree-structured graphical model where the nodal varia…
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Optimal power flow (OPF) is the central optimization problem in electric power grids. Although solved routinely in the course of power grid operations, it is known to be strongly NP-hard in general, and weakly NP-hard over tree networks. In this paper, we formulate the optimal power flow problem over tree networks as an inference problem over a tree-structured graphical model where the nodal variables are low-dimensional vectors. We adapt the standard dynamic programming algorithm for inference over a tree-structured graphical model to the OPF problem. Combining this with an interval discretization of the nodal variables, we develop an approximation algorithm for the OPF problem. Further, we use techniques from constraint programming (CP) to perform interval computations and adaptive bound propagation to obtain practically efficient algorithms. Compared to previous algorithms that solve OPF with optimality guarantees using convex relaxations, our approach is able to work for arbitrary distribution networks and handle mixed-integer optimization problems. Further, it can be implemented in a distributed message-passing fashion that is scalable and is suitable for "smart grid" applications like control of distributed energy resources. We evaluate our technique numerically on several benchmark networks and show that practical OPF problems can be solved effectively using this approach.
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Submitted 21 June, 2016;
originally announced June 2016.
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A Generalized Bass Model for Product Growth in Networks
Authors:
Vahideh H. Manshadi,
Sidhant Misra
Abstract:
Many products and innovations become well-known and widely adopted through the social interactions of individuals in a population. The Bass diffusion model has been widely used to model the temporal evolution of adoption in such social systems. In the model, the likelihood of a new adoption is proportional to the number of previous adopters, implicitly assuming a global (or homogeneous) interactio…
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Many products and innovations become well-known and widely adopted through the social interactions of individuals in a population. The Bass diffusion model has been widely used to model the temporal evolution of adoption in such social systems. In the model, the likelihood of a new adoption is proportional to the number of previous adopters, implicitly assuming a global (or homogeneous) interaction among all individuals in the network. Such global interactions do not exist in many large social networks, however. Instead, individuals typically interact with a small part of the larger population. To quantify the growth rate (or equivalently the adoption timing) in networks with limited interactions, we study a stochastic adoption process where the likelihood that each individual adopts is proportional to the number of adopters among the small group of persons he/she interacts with (and not the entire population of adopters). When the underlying network of interactions is a random $k$-regular graph, we compute the sample path limit of the fraction of adopters. We show the limit coincides with the solution of a differential equation which can viewed as a generalization of the Bass diffusion model. When the degree $k$ is bounded, we show the adoption curve differs significantly from the one corresponds to the Bass diffusion model. In particular, the adoption grows more slowly than what the Bass model projects. In addition, the adoption curve is asymmetric, unlike that of the Bass diffusion model. Such asymmetry has important consequences for the estimation of market potential. Finally, we calculate the timing of early adoptions at finer scales, e.g., logarithmic in the population size.
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Submitted 10 June, 2016;
originally announced June 2016.
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Magnetic Torque of Microfabricated Elements and Magnetotactic Bacteria
Authors:
Lars Zondervan,
Özlem Sardan Sukas,
Islam S. M. Khalil,
Marc P. Pichel,
Sarthak Misra,
Leon Abelmann
Abstract:
We present a thorough theoretical analysis of the magnetic torque on microfabricated elements with dimensions in the range of 100 to 500 μm and magneto-somes of magnetotactic bacteria of a few μm length. We derive simple equations for field dependent torque and magnetic shape anisotropy that can be readily used to replace the crude approximations commonly used. We illustrate and verify the theory…
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We present a thorough theoretical analysis of the magnetic torque on microfabricated elements with dimensions in the range of 100 to 500 μm and magneto-somes of magnetotactic bacteria of a few μm length. We derive simple equations for field dependent torque and magnetic shape anisotropy that can be readily used to replace the crude approximations commonly used. We illustrate and verify the theory on microfabricated elements and magnetotactic bacteria, by field depedent torque magnetometry and by observing their rotation in water under application of a rotating magnetic field. The maximum rotation frequency of the largest microfabricated elements agrees within error boundaries with theory. For smaller, and especially thinner, elements the measured frequencies are a factor of three to four too low. We suspect this is caused by incomplete saturation of the magnetisation in the elements, which is not incorporated in our model. The maximum rotation frequency of magnetotactic bacteria agrees with our model within error margins, which are however quite big due to the large spread in bacteria morphology. The model presented provides a solid basis for the analysis of experiments with magnetic objects in liquid, which is for instance the case in the field of medical microrobotics.
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Submitted 7 August, 2014;
originally announced August 2014.
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Design and performance of an ultra-high vacuum scanning tunneling microscope operating at dilution refrigerator temperatures and high magnetic fields
Authors:
Shashank Misra,
Brian B. Zhou,
Ilya K. Drozdov,
Jungpil Seo,
Andras Gyenis,
Simon C. J. Kingsley,
Howard Jones,
Ali Yazdani
Abstract:
We describe the construction and performance of a scanning tunneling microscope (STM) capable of taking maps of the tunneling density of states with sub-atomic spatial resolution at dilution refrigerator temperatures and high (14 T) magnetic fields. The fully ultra-high vacuum system features visual access to a two-sample microscope stage at the end of a bottom-loading dilution refrigerator, which…
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We describe the construction and performance of a scanning tunneling microscope (STM) capable of taking maps of the tunneling density of states with sub-atomic spatial resolution at dilution refrigerator temperatures and high (14 T) magnetic fields. The fully ultra-high vacuum system features visual access to a two-sample microscope stage at the end of a bottom-loading dilution refrigerator, which facilitates the transfer of in situ prepared tips and samples. The two-sample stage enables location of the best area of the sample under study and extends the experiment lifetime. The successful thermal anchoring of the microscope, described in detail, is confirmed through a base temperature reading of 20 mK, along with a measured electron temperature of 250 mK. Atomically-resolved images, along with complementary vibration measurements, are presented to confirm the effectiveness of the vibration isolation scheme in this instrument. Finally, we demonstrate that the microscope is capable of the same level of performance as typical machines with more modest refrigeration by measuring spectroscopic maps at base temperature both at zero field and in an applied magnetic field.
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Submitted 3 October, 2013;
originally announced October 2013.
