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A zigzag optical cavity for sensing and controlling torsional motion
Authors:
Sofia Agafonova,
Umang Mishra,
Fritz Diorico,
Onur Hosten
Abstract:
Precision sensing and manipulation of milligram-scale mechanical oscillators has attracted growing interest in the fields of table-top explorations of gravity and tests of quantum mechanics at macroscopic scales. Torsional oscillators present an opportunity in this regard due to their remarked isolation from environmental noise. For torsional motion, an effective employment of optical cavities to…
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Precision sensing and manipulation of milligram-scale mechanical oscillators has attracted growing interest in the fields of table-top explorations of gravity and tests of quantum mechanics at macroscopic scales. Torsional oscillators present an opportunity in this regard due to their remarked isolation from environmental noise. For torsional motion, an effective employment of optical cavities to enhance optomechanical interactions -- as already established for linear oscillators -- so far faced certain challenges. Here, we propose a novel concept for sensing and manipulating torsional motion, where exclusively the torsional rotations of a pendulum are mapped onto the path length of a single two-mirror optical cavity. The concept inherently alleviates many limitations of previous approaches. A proof-of-principle experiment is conducted with a rigidly controlled pendulum to explore the sensing aspects of the concept and to identify practical limitations in a potential state-of-the art setup. Based on this work, we anticipate development of precision torque sensors with sensitivities below $10^{-19}~\mathrm{N\cdot m/\sqrt{Hz}}$ and with the motion of the pendulums dominated by quantum radiation pressure noise at sub-microwatts of incoming laser power. This work, therefore, paves the way to new horizons for experiments at the interface of quantum mechanics and gravity.
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Submitted 22 June, 2023;
originally announced June 2023.
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Monitoring and active stabilization of laser injection locking using beam ellipticity
Authors:
Umang Mishra,
Vyacheslav Li,
Sebastian Wald,
Sofia Agafonova,
Fritz Diorico,
Onur Hosten
Abstract:
We unveil a powerful method for stabilization of laser injection locking based on sensing variations in the output beam ellipticity of an optically seeded laser. The effect arises due to an interference between the seeding beam and the injected laser output. We demonstrate the method for a commercial semiconductor laser without the need for any internal changes to the readily-operational injection…
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We unveil a powerful method for stabilization of laser injection locking based on sensing variations in the output beam ellipticity of an optically seeded laser. The effect arises due to an interference between the seeding beam and the injected laser output. We demonstrate the method for a commercial semiconductor laser without the need for any internal changes to the readily-operational injection locked laser system that was utilized. The method can also be used to increase the mode-hop free tuning range of lasers, and has the potential to fill a void in the low-noise laser industry.
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Submitted 11 July, 2023; v1 submitted 2 December, 2022;
originally announced December 2022.
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Search for dark photons using a multilayer dielectric haloscope equipped with a single-photon avalanche diode
Authors:
Laura Manenti,
Umang Mishra,
Gianmarco Bruno,
Adriano Di Giovanni,
Alexander John Millar,
Knut Dundas Morå,
Renu Pasricha,
Henry Roberts,
Panos Oikonomou,
Isaac Sarnoff,
James Weston,
Francesco Arneodo
Abstract:
We report on the results of the search for dark photons with mass around 1.5$\,\rm eV/c^2$ using a multilayer dielectric haloscope equipped with an affordable and commercially available photosensor. The multilayer stack, which enables the conversion of dark photons (DP) to Standard Model photons, is made of 23 bilayers of alternating SiO$_2$ and Si$_3$N$_4$ thin films with linearly increasing thic…
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We report on the results of the search for dark photons with mass around 1.5$\,\rm eV/c^2$ using a multilayer dielectric haloscope equipped with an affordable and commercially available photosensor. The multilayer stack, which enables the conversion of dark photons (DP) to Standard Model photons, is made of 23 bilayers of alternating SiO$_2$ and Si$_3$N$_4$ thin films with linearly increasing thicknesses through the stack (a configuration known as a "chirped stack"). The thicknesses have been chosen according to an optimisation algorithm in order to maximise the DP-photon conversion in the energy region where the photosensor sensitivity peaks. This prototype experiment, baptised MuDHI (Multilayer Dielectric Haloscope Investigation) by the authors of this paper, has been designed, developed and run at the Astroparticle Laboratory of New York University Abu Dhabi, which marks the first time a dark matter experiment has been operated in the Middle East. No significant signal excess is observed, and the method of maximum log-likelihood is used to set exclusion limits at $90\%$ confidence level on the kinetic mixing coupling constant between dark photons and ordinary photons.
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Submitted 7 January, 2023; v1 submitted 20 October, 2021;
originally announced October 2021.
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Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors
Authors:
Athith Krishna,
Aditya Raj,
Nirupam Hatui,
Stacia Keller,
Umesh Mishra
Abstract:
In this study the MOCVD growth and electrical properties of N-polar modulation doped p-AlGaN/GaN superlattices (SLs) were investigated. Hole sheet charge density and mobility were studied as a function of the concentration of the p-type dopant Mg in the SL and the number of SL periods. Room temperature Hall measurements were carried out to determine the hole mobility and the sheet charge density.…
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In this study the MOCVD growth and electrical properties of N-polar modulation doped p-AlGaN/GaN superlattices (SLs) were investigated. Hole sheet charge density and mobility were studied as a function of the concentration of the p-type dopant Mg in the SL and the number of SL periods. Room temperature Hall measurements were carried out to determine the hole mobility and the sheet charge density. While the hole density increased with increasing number of SL periods, the hole mobility was largely unaffected.Hole mobilities as high as 18cm2/Vs at a simultaneous high hole density of 6.5e13 cm-2 were observed for N-polar SLs with a Mg modulation do** of 7.5e18 cm-3. For comparable uniformly doped Ga-polar SL samples, a mobility of 11cm2/Vs was measured. Lowest sheet resistance in the GaN/AlGaN materials system of 5kOhm/sq is also reported. Test-structure transistors were also fabricated to investigate the applicability of these SL structures, with planar device resulting in a current of 5mA/mm, and a FinFET structure resulting in a current of over 100mA/mm.
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Submitted 14 October, 2019;
originally announced October 2019.
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AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment
Authors:
Athith Krishna,
Aditya Raj,
Nirupam Hatui,
Onur Koksaldi,
Raina Jang,
Stacia Keller,
Umesh Mishra
Abstract:
To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable. Authors report the first p-type field effect transistor (pFET) based on an AlGaN/GaN superlattice (SL), grown using MOCVD. Magnesium was used as the p-type dopant. A sheet resistance of 11.6 kΩ/sq, and a contact resistance of 14.9Ω.mm was de…
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To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable. Authors report the first p-type field effect transistor (pFET) based on an AlGaN/GaN superlattice (SL), grown using MOCVD. Magnesium was used as the p-type dopant. A sheet resistance of 11.6 kΩ/sq, and a contact resistance of 14.9Ω.mm was determined using transmission line measurements (TLM) for a Mg do** of 1.5e19cm^-3 of Mg. Mobilities in the range of 7-10 cm\^2/Vs and a total sheet charge density in the range of 1e13-6e13 cm-2 were measured using room temperature Hall effect measurements. Without Tetramethylammonium hydroxide (TMAH) treatment, the fabricated pFETs had a maximum drain-source current (IDS) of 3mA/mm and an On-Resistance (RON) of 3.48 kΩ.mm, and did not turn-off completely. With TMAH treatment during fabrication, a maximum IDS of 4.5mA/mm, RON of 2.2kΩ.mm, and five orders of current modulation was demonstrated, which is the highest achieved for a p-type transistor based on (Al,Ga)N.
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Submitted 25 August, 2019; v1 submitted 5 February, 2019;
originally announced February 2019.
