Showing 1–2 of 2 results for author: Miller, K H

A Broadband Micro-machined Far-Infrared Absorber

Authors: Edward J. Wollack, Aaron M. Datesman, Christine A. Jhabvala, Kevin H. Miller, Manuel A. Quijada

Abstract: The experimental investigation of a broadband far-infrared meta-material absorber is described. The observed absorptance is $>\,0.95$ from ${\rm 1-20\,THz}$ (${\rm 300-15\,μm}$) over a temperature range spanning ${\rm 5-300\,K}$. The meta-material, realized from an array of tapers ${\rm \approx 100\,μm}$ in length, is largely insensitive to the detailed geometry of these elements and is cryogenica… ▽ More The experimental investigation of a broadband far-infrared meta-material absorber is described. The observed absorptance is $>\,0.95$ from ${\rm 1-20\,THz}$ (${\rm 300-15\,μm}$) over a temperature range spanning ${\rm 5-300\,K}$. The meta-material, realized from an array of tapers ${\rm \approx 100\,μm}$ in length, is largely insensitive to the detailed geometry of these elements and is cryogenically compatible with silicon-based micro-machined technologies. The electromagnetic response is in general agreement with a physically motivated transmission line model. △ Less

Submitted 2 May, 2016; v1 submitted 13 April, 2016; originally announced April 2016.

Comments: 6 pages, 2 figures, published -- Review of Scientific Instruments 87, 054701 (2016)

Infrared dielectric properties of low-stress silicon oxide

Authors: Giuseppe Cataldo, Edward J. Wollack, Ari D. Brown, Kevin H. Miller

Abstract: Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric fu… ▽ More Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented. △ Less

Submitted 15 March, 2016; originally announced March 2016.

Comments: 4 pages, 3 figures, 1 table

Journal ref: Opt. Lett. 41, 1364-1367 (2016)