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Characterization of iLGADs using soft X-rays
Authors:
Antonio Liguori,
Rebecca Barten,
Filippo Baruffaldi,
Anna Bergamaschi,
Giacomo Borghi,
Maurizio Boscardin,
Martin Brückner,
Tim Alexander Butcher,
Maria Carulla,
Matteo Centis Vignali,
Roberto Dinapoli,
Simon Ebner,
Francesco Ficorella,
Erik Fröjdh,
Dominic Greiffenberg,
Omar Hammad Ali,
Shqipe Hasanaj,
Julian Heymes,
Viktoria Hinger,
Thomas King,
Pawel Kozlowski,
Carlos Lopez-Cuenca,
Davide Mezza,
Konstantinos Moustakas,
Aldo Mozzanica
, et al. (9 additional authors not shown)
Abstract:
Experiments at synchrotron radiation sources and X-ray Free-Electron Lasers in the soft X-ray energy range ($250$eV--$2$keV) stand to benefit from the adaptation of the hybrid silicon detector technology for low energy photons. Inverse Low Gain Avalanche Diode (iLGAD) sensors provide an internal gain, enhancing the signal-to-noise ratio and allowing single photon detection below $1$keV using hybri…
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Experiments at synchrotron radiation sources and X-ray Free-Electron Lasers in the soft X-ray energy range ($250$eV--$2$keV) stand to benefit from the adaptation of the hybrid silicon detector technology for low energy photons. Inverse Low Gain Avalanche Diode (iLGAD) sensors provide an internal gain, enhancing the signal-to-noise ratio and allowing single photon detection below $1$keV using hybrid detectors. In addition, an optimization of the entrance window of these sensors enhances their quantum efficiency (QE). In this work, the QE and the gain of a batch of different iLGAD diodes with optimized entrance windows were characterized using soft X-rays at the Surface/Interface:Microscopy beamline of the Swiss Light Source synchrotron. Above $250$eV, the QE is larger than $55\%$ for all sensor variations, while the charge collection efficiency is close to $100\%$. The average gain depends on the gain layer design of the iLGADs and increases with photon energy. A fitting procedure is introduced to extract the multiplication factor as a function of the absorption depth of X-ray photons inside the sensors. In particular, the multiplication factors for electron- and hole-triggered avalanches are estimated, corresponding to photon absorption beyond or before the gain layer, respectively.
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Submitted 23 October, 2023;
originally announced October 2023.
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Detection of MeV electrons using a charge integrating hybrid pixel detector
Authors:
E. Fröjdh,
F. Baruffaldi,
A. Bergamaschi,
M. Carulla,
R. Dinapoli,
D. Greiffenberg,
J. Heymes,
V. Hinger,
R. Ischebeck,
S. Mathisen,
J. McKenzie,
D. Mezza,
K. Moustakas,
A. Mozzanica,
B. Schmitt,
J. Zhang
Abstract:
Electrons are emerging as a strong complement to X-rays for diffraction based studies. In this paper we investigate the performance of a JUNGFRAU detector with 320 um thick silicon sensor at a pulsed electron source. Originally developed for X-ray detection at free electron lasers, JUNGFRAU features a dynamic range of 120 MeV/pixel (implemented with in-pixel gain switching) which translated to abo…
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Electrons are emerging as a strong complement to X-rays for diffraction based studies. In this paper we investigate the performance of a JUNGFRAU detector with 320 um thick silicon sensor at a pulsed electron source. Originally developed for X-ray detection at free electron lasers, JUNGFRAU features a dynamic range of 120 MeV/pixel (implemented with in-pixel gain switching) which translated to about 1200 incident electrons per pixel and frame in the MeV region. We preset basic characteristics such as energy deposited per incident particle, resulting cluster size and spatial resolution along with dynamic (intensity) range scans. Measurements were performed at 4, 10 and 20 MeV/c. We compare the measurements with GEANT4 based simulations and extrapolate the results to different sensor thicknesses using these simulations.
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Submitted 28 October, 2022;
originally announced October 2022.
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Development of LGAD sensors with a thin entrance window for soft X-ray detection
Authors:
Jiaguo Zhang,
Rebecca Barten,
Filippo Baruffaldi,
Anna Bergamaschi,
Giacomo Borghi,
Maurizio Boscardin,
Martin Brueckner,
Maria Carulla,
Matteo Centis Vignali,
Roberto Dinapoli,
Simon Ebner,
Francesco Ficorella,
Erik Froejdh,
Dominic Greiffenberg,
Omar Hammad Ali,
Julian Heymes,
Shqipe Hasanaj,
Viktoria Hinger,
Thomas King,
Pawel Kozlowski,
Carlos Lopez-Cuenca,
Davide Mezza,
Konstantinos Moustakas,
Aldo Mozzanica,
Giovanni Paternoster
, et al. (4 additional authors not shown)
Abstract:
We show the developments carried out to improve the silicon sensor technology for the detection of soft X-rays with hybrid X-ray detectors. An optimization of the entrance window technology is required to improve the quantum efficiency. The LGAD technology can be used to amplify the signal generated by the X-rays and to increase the signal-to-noise ratio, making single photon resolution in the sof…
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We show the developments carried out to improve the silicon sensor technology for the detection of soft X-rays with hybrid X-ray detectors. An optimization of the entrance window technology is required to improve the quantum efficiency. The LGAD technology can be used to amplify the signal generated by the X-rays and to increase the signal-to-noise ratio, making single photon resolution in the soft X-ray energy range possible. In this paper, we report first results obtained from an LGAD sensor production with an optimized thin entrance window. Single photon detection of soft X-rays down to 452~eV has been demonstrated from measurements, with a signal-to-noise ratio better than 20.
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Submitted 24 October, 2022;
originally announced October 2022.
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Design and first tests of the Gotthard-II readout ASIC for the European X-ray Free-Electron Laser
Authors:
Jiaguo Zhang,
Marie Andrae,
Rebecca Barten,
Anna Bergamaschi,
Martin Brueckner,
Sabina Chiriotti-Alvarez,
Roberto Dinapoli,
Erik Froejdh,
Dominic Greiffenberg,
Pawel Kozlowski,
Markus Kuster,
Carlos Lopez-Cuenca,
Markus Meyer,
Davide Mezza,
Aldo Mozzanica,
Marco Ramilli,
Christian Ruder,
Bernd Schmitt,
Xintian Shi,
Dhanya Thattil,
Gemma Tinti,
Monica Turcato,
Seraphin Vetter
Abstract:
Gotthard-II is a charge-integrating microstrip detector developed for experiments and diagnostics at free-electron lasers using hard X-rays of 5 keV - 20 keV. Thanks to its excellent single photon sensitivity, large dynamic range as well as high frame rate of 4.5 MHz in burst mode, its potential scientific applications include X-ray absorption/emission spectroscopy, hard X-ray high resolution sing…
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Gotthard-II is a charge-integrating microstrip detector developed for experiments and diagnostics at free-electron lasers using hard X-rays of 5 keV - 20 keV. Thanks to its excellent single photon sensitivity, large dynamic range as well as high frame rate of 4.5 MHz in burst mode, its potential scientific applications include X-ray absorption/emission spectroscopy, hard X-ray high resolution single-shot spectrometry (HiREX), beam diagnostics, as well as veto signal generation for pixel detectors. The Gotthard-II ASIC has been designed and fabricated using UMC-110 nm technology. The final ASIC design and performance in terms of noise, linearity, dynamic range, coupling between channels and speed will be discussed in the paper. In addition, a first measurement of an X-ray absorption spectrum of a standard copper sample has been done. The performance of the Gotthard-II in an experiment using energy dispersive X-rays has been demonstrated.
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Submitted 29 March, 2021;
originally announced March 2021.
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Megapixels @ Megahertz -- The AGIPD High-Speed Cameras for the European XFEL
Authors:
Ulrich Trunk,
Aschkan Allahgholi,
Julian Becker,
Annette Delfs,
Roberto Dinapoli,
Peter Göttlicher,
Heinz Graafsma,
Dominic Greiffenberg,
Helmut Hirsemann,
Stefanie Jack,
Alexander Klyuev,
Hans Krüger,
Manuela Kuhn,
Torsten Laurus,
Alessandro Marras,
Davide Mezza,
Aldo Mozzanica,
Jennifer Poehlsen,
Ofir Shefer Shalev,
Igor Sheviakov,
Bernd Schmitt,
Jörn Schwandt,
Xintian Shi,
Sergej Smoljanin,
Jiaguo Zhang
, et al. (1 additional authors not shown)
Abstract:
The European XFEL is an extremely brilliant Free Electron Laser Source with a very demanding pulse structure: trains of 2700 X-Ray pulses are repeated at 10 Hz. The pulses inside the train are spaced by 220 ns and each one contains up to $10^{12}$ photons of 12.4 keV, while being $\le 100$ fs in length. AGIPD, the Adaptive Gain Integrating Pixel Detector, is a hybrid pixel detector developed by DE…
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The European XFEL is an extremely brilliant Free Electron Laser Source with a very demanding pulse structure: trains of 2700 X-Ray pulses are repeated at 10 Hz. The pulses inside the train are spaced by 220 ns and each one contains up to $10^{12}$ photons of 12.4 keV, while being $\le 100$ fs in length. AGIPD, the Adaptive Gain Integrating Pixel Detector, is a hybrid pixel detector developed by DESY, PSI, and the Universities of Bonn and Hamburg to cope with these properties. It is a fast, low noise integrating detector, with single photon sensitivity (for $\text{E}_γ \ge 6$ keV) and a large dynamic range, up to $10^4$ photons at 12.4 keV. This is achieved with a charge sensitive amplifier with 3 adaptively selected gains per pixel. 352 images can be recorded at up to 6.5 MHz and stored in the in-pixel analogue memory and read out between pulse trains. The core component of this detector is the AGIPD ASIC, which consists of $64 \times 64$ pixels of $200 μ\text{m} \times 200 μ\text{m}$. Control of the ASIC's image acquisition and analogue readout is via a command based interface. FPGA based electronic boards, controlling ASIC operation, image digitisation and 10 GE data transmission interface AGIPD detectors to DAQ and control systems. An AGIPD 1 Mpixel detector has been installed at the SPB experimental station in August 2017, while a second one is currently commissioned for the MID endstation. A larger (4 Mpixel) AGIPD detector and one to employ Hi-Z sensor material to efficiently register photons up to $\text{E}_γ \approx 25$ keV are currently under construction.
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Submitted 6 August, 2019;
originally announced August 2019.
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The Adaptive Gain Integrating Pixel Detector at the European XFEL
Authors:
Aschkan Allahgholi,
Julian Becker,
Annette Delfs,
Roberto Dinapoli,
Peter Goettlicher,
Dominic Greiffenberg,
Beat Henrich,
Helmut Hirsemann,
Manuela Kuhn,
Robert Klanner,
Alexander Klyuev,
Hans Krueger,
Sabine Lange,
Torsten Laurus,
Alessandro Marras,
Davide Mezza,
Aldo Mozzanica,
Magdalena Niemann,
Jennifer Poehlsen,
Joern Schwandt,
Igor Sheviakov,
Xintian Shi,
Sergej Smoljanin,
Lothar Steffen,
Jolanta Sztuk-Dambietz
, et al. (7 additional authors not shown)
Abstract:
The Adaptive Gain Integrating Pixel Detector (AGIPD) is an x-ray imager, custom designed for the European x-ray Free-Electron Laser (XFEL). It is a fast, low noise integrating detector, with an adaptive gain amplifier per pixel. This has an equivalent noise of less than 1 keV when detecting single photons and, when switched into another gain state, a dynamic range of more than 10$^4$ photons of 12…
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The Adaptive Gain Integrating Pixel Detector (AGIPD) is an x-ray imager, custom designed for the European x-ray Free-Electron Laser (XFEL). It is a fast, low noise integrating detector, with an adaptive gain amplifier per pixel. This has an equivalent noise of less than 1 keV when detecting single photons and, when switched into another gain state, a dynamic range of more than 10$^4$ photons of 12 keV. In burst mode the system is able to store 352 images while running at up to 6.5 MHz, which is compatible with the 4.5 MHz frame rate at the European XFEL. The AGIPD system was installed and commissioned in August 2017, and successfully used for the first experiments at the Single Particles, Clusters and Biomolecules (SPB) experimental station at the European XFEL since September 2017. This paper describes the principal components and performance parameters of the system.
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Submitted 2 October, 2018; v1 submitted 1 August, 2018;
originally announced August 2018.
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Performance Evaluation of the Analogue Front-End and ADC Prototypes for the Gotthard-II Development
Authors:
Jiaguo Zhang,
Marie Andrä,
Rebecca Barten,
Anna Bergamaschi,
Martin Brückner,
Roberto Dinapoli,
Erik Fröjdh,
Dominic Greiffenberg,
Carlos Lopez-Cuenca,
Davide Mezza,
Aldo Mozzanica,
Marco Ramilli,
Sophie Redford,
Marie Ruat,
Christian Ruder,
Bernd Schmitt,
Xintian Shi,
Dhanya Thattil,
Gemma Tinti,
Monica Turcato,
Seraphin Vettera
Abstract:
Gotthard-II is a silicon microstrip detector developed for the European X-ray Free-Electron Laser (XFEL.EU). Its potential scientific applications include X-ray absorption/emission spectroscopy, hard X-ray high resolution single-shot spectrometry (HiREX), energy dispersive experiments at 4.5 MHz frame rate, beam diagnostics, as well as veto signal generation for pixel detectors. Gotthard-II uses a…
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Gotthard-II is a silicon microstrip detector developed for the European X-ray Free-Electron Laser (XFEL.EU). Its potential scientific applications include X-ray absorption/emission spectroscopy, hard X-ray high resolution single-shot spectrometry (HiREX), energy dispersive experiments at 4.5 MHz frame rate, beam diagnostics, as well as veto signal generation for pixel detectors. Gotthard-II uses a silicon microstrip sensor with a pitch of 50 $μ$m or 25 $μ$m and with 1280 or 2560 channels wire-bonded to readout chips (ROCs). In the ROC, an adaptive gain switching pre-amplifier (PRE), a fully differential Correlated-Double-Sampling (CDS) stage, an Analog-to-Digital Converter (ADC) as well as a Static Random-Access Memory (SRAM) capable of storing all the 2700 images in an XFEL.EU bunch train will be implemented. Several prototypes with different designs of the analogue front-end (PRE and CDS) and ADC test structures have been fabricated in UMC-110 nm CMOS technology and their performance has been evaluated. In this paper, the performance of the analogue front-end and ADC will be summarized.
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Submitted 3 January, 2018; v1 submitted 23 November, 2017;
originally announced November 2017.
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Towards Gotthard-II: Development of A Silicon Microstrip Detector for the European X-ray Free-Electron Laser
Authors:
Jiaguo Zhang,
Marie Andrä,
Rebecca Barten,
Anna Bergamaschi,
Martin Brückner,
Roberto Dinapoli,
Erik Froejdh,
Dominic Greiffenberg,
Carlos Lopez-Cuenca,
Davide Mezza,
Aldo Mozzanica,
Marco Ramilli,
Sophie Redford,
Marie Ruat,
Christian Ruder,
Bernd Schmitt,
Xintian Shi,
Dhanya Thattil,
Gemma Tinti,
Monica Turcato,
Seraphin Vettera
Abstract:
Gotthard-II is a 1-D microstrip detector specifically developed for the European X-ray Free-Electron Laser. It will not only be used in energy dispersive experiments but also as a beam diagnostic tool with additional logic to generate veto signals for the other 2-D detectors. Gotthard-II makes use of a silicon microstrip sensor with a pitch of either 50 μm or 25 μm and with 1280 or 2560 channels w…
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Gotthard-II is a 1-D microstrip detector specifically developed for the European X-ray Free-Electron Laser. It will not only be used in energy dispersive experiments but also as a beam diagnostic tool with additional logic to generate veto signals for the other 2-D detectors. Gotthard-II makes use of a silicon microstrip sensor with a pitch of either 50 μm or 25 μm and with 1280 or 2560 channels wire-bonded to adaptive gain switching readout chips. Built-in analog-to-digital converters and digital memories will be implemented in the readout chip for a continuous conversion and storage of frames for all bunches in the bunch train. The performance of analogue front-end prototypes of Gotthard has been investigated in this work. The results in terms of noise, conversionngain, dynamic range, obtained by means of infrared laser and X-rays, will be shown. In particular, the effects of the strip-to-strip coupling are studied in detail and it is found that the reduction of the coupling effects is one of the key factors for the development of the analogue front-end of Gotthard-II.
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Submitted 20 November, 2017;
originally announced November 2017.
