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Spectral multiplexing based on multi-distance lensless imaging
Authors:
Qijun You,
Lingshuo Meng,
Yun Gao,
Qing Liao,
Wei Cao,
Peixiang Lu
Abstract:
We have demonstrated the capability of spectral multiplexing in multi-distance diffractive imaging, enabling the reconstruction of samples with diverse spectral responses. While previous methods like ptychography utilize redundancy in radial diffraction data to achieve information multiplexing, they typically require capturing a substantial amount of diffraction data. In contrast, our approach eff…
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We have demonstrated the capability of spectral multiplexing in multi-distance diffractive imaging, enabling the reconstruction of samples with diverse spectral responses. While previous methods like ptychography utilize redundancy in radial diffraction data to achieve information multiplexing, they typically require capturing a substantial amount of diffraction data. In contrast, our approach effectively harnesses the redundancy information in axial diffraction data. This significantly reduces the amount of diffraction data required and relaxes the stringent requirements on optical path stability.
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Submitted 29 May, 2024;
originally announced May 2024.
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Ferroelectricity Driven by Orbital Resonance of Protons in CH$_3$NH$_3$Cl and CH$_3$NH$_3$Br
Authors:
Chu Xin Peng,
Lei Meng,
Yi Yang Xu,
Tian Tian Xing,
Miao Miao Zhao,
Peng Ren,
Fei Yen
Abstract:
The $β$ and $γ$ phases of methylammonium chloride CH$_3$NH$_3$Cl and methylammonium bromide CH$_3$NH$_3$Br are identified to be ferroelectric $via$ pyroelectric current and dielectric constant measurements. The magnetic susceptibility also exhibits pronounced discontinuities at the Curie temperatures. We attribute the origin of spontaneous polarization to the emergence of two groups of proton orbi…
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The $β$ and $γ$ phases of methylammonium chloride CH$_3$NH$_3$Cl and methylammonium bromide CH$_3$NH$_3$Br are identified to be ferroelectric $via$ pyroelectric current and dielectric constant measurements. The magnetic susceptibility also exhibits pronounced discontinuities at the Curie temperatures. We attribute the origin of spontaneous polarization to the emergence of two groups of proton orbital magnetic moments from the uncorrelated motion of the CH$_3$ and NH$_3$ groups in the $β$ and $γ$ phases. The two inequivalent frameworks of intermolecular orbital resonances interact with each other to distort the lattice in a non-centrosymmetric fashion. Our findings indicate that the structural instabilities in molecular frameworks are magnetic in origin as well as provide a new pathway toward uncovering new organic ferroelectrics.
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Submitted 15 May, 2024;
originally announced May 2024.
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Nearest-Neighboring Pairing of Monolayer NbSe2 Facilitates the Emergence of Topological Superconducting States
Authors:
Yizhi Li,
Quan Gao,
Yanru Li,
Jianxin Zhong,
Lijun Meng
Abstract:
NbSe2, which simultaneously exhibits superconductivity and spin-orbit coupling, is anticipated to pave the way for topological superconductivity and unconventional electron pairing. In this paper, we systematically study topological superconducting (TSC) phases in monolayer NbSe2 through mixing on-site s-wave pairing (ps) with nearest-neighbor pairing (psA1) based on a tight-binding model. We obse…
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NbSe2, which simultaneously exhibits superconductivity and spin-orbit coupling, is anticipated to pave the way for topological superconductivity and unconventional electron pairing. In this paper, we systematically study topological superconducting (TSC) phases in monolayer NbSe2 through mixing on-site s-wave pairing (ps) with nearest-neighbor pairing (psA1) based on a tight-binding model. We observe rich phases with both fixed and sensitive Chern numbers (CNs) depending on the chemical potential (μ) and out-of-plane magnetic field (Vz). As the psA1 increases, the TSC phase manifests matching and mismatching features according to whether there is a bulk-boundary correspondence (BBC). Strikingly, the introduction of mixed wave pairing significantly reduces the critical Vz to form TSC phases compared with the pure s-wave paring. Moreover, the TSC phase can be modulated even at Vz=0 under appropriate μ and psA1, which is identified by the robust topological edge states (TESs) of ribbons. Additionally, the mixed pairing influences the hybridization of bulk and edge states, resulting in a matching/mismatching BBC with localized/oscillating TESs on the ribbon. Our finding is helpful for the realization of TSC states in experiment, as well as designing and regulating TSC materials.
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Submitted 4 January, 2024;
originally announced January 2024.
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Fractal-like star-mesh transformations using graphene quantum Hall arrays
Authors:
Dominick S. Scaletta,
Swapnil M. Mhatre,
Ngoc Thanh Mai Tran,
Cheng-Hsueh Yang,
Heather M. Hill,
Yanfei Yang,
Linli Meng,
Alireza R. Panna,
Shamith U. Payagala,
Randolph E. Elmquist,
Dean G. Jarrett,
David B. Newell,
Albert F. Rigosi
Abstract:
A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to the use of star-mesh transformations such that fractal-like, or recursive, device designs can yield high enough resistances (like 1 EΩ, arguably the highest resis…
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A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to the use of star-mesh transformations such that fractal-like, or recursive, device designs can yield high enough resistances (like 1 EΩ, arguably the highest resistance with meaningful applicability) while still being feasible to build with modern fabrication techniques. Epitaxial graphene elements are tested, whose quantized Hall resistance at the nu=2 plateau (R_H = 12906.4 Ω) becomes the building block for larger effective, quantized resistances. It is demonstrated that, mathematically, one would not need more than 200 elements to achieve the highest pertinent resistances
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Submitted 27 September, 2023;
originally announced September 2023.
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Virtual states in the coupled-channel problems with an improved complex scaling method
Authors:
Yan-Ke Chen,
Lu Meng,
Zi-Yang Lin,
Shi-Lin Zhu
Abstract:
We improve the complex scaling method (CSM) to obtain virtual states, which were previously challenging in the conventional CSM. Our approach solves the Schrödinger equation in the momentum space as an eigenvalue problem by choosing the flexible contours. It proves to be highly effective in identifying the poles across the different Riemann sheets in the multichannel scatterings. It is more straig…
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We improve the complex scaling method (CSM) to obtain virtual states, which were previously challenging in the conventional CSM. Our approach solves the Schrödinger equation in the momentum space as an eigenvalue problem by choosing the flexible contours. It proves to be highly effective in identifying the poles across the different Riemann sheets in the multichannel scatterings. It is more straightforward and efficient than searching for the zeros of the Fredholm determinant of the Lippmann-Schwinger equation using the root-finding algorithms. This advancement significantly extends the capabilities of the CSM in accurately characterizing the resonances and virtual states in quantum systems.
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Submitted 20 February, 2024; v1 submitted 23 August, 2023;
originally announced August 2023.
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High-Yield, Scaling-Up Fabrication of Fermi-Level-Pinning-Free Organic Thin-Film Transistor Arrays with Printed Van der Waals Contacts
Authors:
Zhiyun Wu,
Shuiren Liu,
Juzhong Zhang,
Hanyu Jia,
Qingqing Sun,
Xiaoguang Hu,
Lingxian Meng,
Xuying Liu
Abstract:
Fermi-level pinning (FLP) effect was widely observed in thin-film transistors (TFTs) with van der Waals (vdW) layered semiconductors (organic or two-dimensional) when contact electrodes were thermally evaporated1-3. Intensive investigation was implemented for formation of FLP-free interfacial states by eliminating chemical disorder and crystal defects arising from metal deposition4-9. However, tec…
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Fermi-level pinning (FLP) effect was widely observed in thin-film transistors (TFTs) with van der Waals (vdW) layered semiconductors (organic or two-dimensional) when contact electrodes were thermally evaporated1-3. Intensive investigation was implemented for formation of FLP-free interfacial states by eliminating chemical disorder and crystal defects arising from metal deposition4-9. However, technical and principal challenges are still existing towards high-yield, wafer-scalable and low-cost integration of TFT devices. Herein, we developed a general, scaling-up strategy to fabricate large-scale, high-performance FLP-free organic TFT (OTFT) arrays by using printed vdW contacts consisting of MXene composite electrodes and 2, 7-dioctyl [1] benzothieno [3, 2-b] [1] benzothiophene (C8BTBT). Room-temperature processes allow for a physically stacked junction without any structural or chemical damages. The OTFT arrays can be printed on a large-area silicon wafer or plastic film with 100% yield, exhibit ultrahigh field-effect mobility (μ_FE) over 17.0 square centimetres per volt per second (cm2 V-1s-1), high on/off ratio exceeding 108, relatively low contact resistance of 3k ohm micrometres. The underlying mechanism for the high device performance was unveiled by Kelvin Probe Force Microscopy (KPFM) combined with theoretical simulation. The results indicate that work function (W_F) of the printed electrodes can be tuned at a wide range of 4.8-5.6 eV, thus significantly lowering the charge-injection barrier at the contact interfaces with ideal FLP-free character (the interfacial factor reaches 0.99 \pm 0.02). This study paves a general strategy for achieving large-scale, high-performance thin-film electronics.
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Submitted 24 June, 2023;
originally announced June 2023.
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Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown
Authors:
Chinmoy Nath Saha,
Abhishek Vaidya,
A F M Anhar Uddin Bhuiyan,
Lingyu Meng,
Hong** Zhao,
Uttam Singisetti
Abstract:
This letter reports a highly scaled 90 nm gate length beta-Ga2O3 T-gate MOSFET with no current collapse and record power gain cut off frequency (fMAX). The epitaxial stack of 60 nm thin channel MOSFET was grown by Molecular Beam Epitaxy (MBE) and highly doped (n++) contact regrowth was carried out by Metal Organic Chemical Vapour Deposition (MOCVD) in the source/drain region. Maximum on current (I…
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This letter reports a highly scaled 90 nm gate length beta-Ga2O3 T-gate MOSFET with no current collapse and record power gain cut off frequency (fMAX). The epitaxial stack of 60 nm thin channel MOSFET was grown by Molecular Beam Epitaxy (MBE) and highly doped (n++) contact regrowth was carried out by Metal Organic Chemical Vapour Deposition (MOCVD) in the source/drain region. Maximum on current (IDS, MAX) of 160 mA/mm and transconductance (gm) around 36 mS/mm was measured at VDS= 10 V for LSD= 1.5 micrometer channel length. Transconductance is limited by higher channel sheet resistance (Rsheet). We observed no current collapse for both drain and gate lag measurement even at higher VDG,Q quiescent bias points. This is the first report of Ga2O3 FET showing no current collapse without any external passivation. Breakdown voltage around 125 V was reported for LGD= 1.2 micrometer. We extracted 27 GHz current gain cut off frequency (fT) and 55 GHz fMAX for 20 V drain bias. fMAX value mentioned here is the highest for Ga2O3 and the first demonstration of 55 GHz operation. fT. VBR product of 3.375 THz.V has been calculated which is comparable with state-of-art GaN HEMT. This letter suggests that Ga2O3 can be a suitable candidate for X-band application.
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Submitted 14 November, 2023; v1 submitted 8 May, 2023;
originally announced May 2023.
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Electrical Characteristics of in situ Mg-doped beta-Ga2O3 Current-Blocking Layer for Vertical Devices
Authors:
Sudipto Saha,
Lingyu Meng,
A F M Anhar Uddin Bhuiyan,
Ankit Sharma,
Chinmoy Nath Saha,
Hong** Zhao,
Uttam Singisetti
Abstract:
The lack of p-type do** has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demonstrate vertical devices. This paper presents the first demonstration of in situ Mg-doped beta-Ga2O3 CBLs grown using metalorganic chemical vapor deposition. Device structures were designed with in-situ Mg doped layers wi…
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The lack of p-type do** has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demonstrate vertical devices. This paper presents the first demonstration of in situ Mg-doped beta-Ga2O3 CBLs grown using metalorganic chemical vapor deposition. Device structures were designed with in-situ Mg doped layers with varied targeted Mg do** concentrations, which were calibrated by quantitative secondary ion mass spectroscopy (SIMS). The effectiveness of the CBL is characterized using temperature dependent current-voltage measurements using n-Mg-doped-n structures, providing crucial insight into the underlying mechanisms. To further validate the experimental results, a TCAD simulation is performed and the electrically active effective do** is found to be dependent on the Mg-do** density, offering a new perspective on the optimization of CBL performance. Breakdown measurements show a 3.4 MV/cm field strength. This study represents a significant step forward in the development of Ga2O3-based devices and paves the way for future advancements in this exciting field.
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Submitted 12 April, 2023;
originally announced April 2023.
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Cooperation and the social brain hypothesis in primate social networks
Authors:
Neil G. MacLaren,
Lingqi Meng,
Melissa Collier,
Naoki Masuda
Abstract:
The social brain hypothesis states that the relative size of the neocortex is larger for species with higher social complexity as a result of evolution. Various lines of empirical evidence have supported the social brain hypothesis, including evidence from the structure of social networks. Social complexity may itself positively impact cooperation among individuals, which occurs across different a…
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The social brain hypothesis states that the relative size of the neocortex is larger for species with higher social complexity as a result of evolution. Various lines of empirical evidence have supported the social brain hypothesis, including evidence from the structure of social networks. Social complexity may itself positively impact cooperation among individuals, which occurs across different animal taxa and is a key behavior for successful group living. Theoretical research has shown that particular structures of social networks foster cooperation more easily than others. Therefore, we hypothesized that species with a relatively large neocortex tend to form social networks that better enable cooperation. In the present study, we combine data on brain and body mass, data on social networks, and theory on the evolution of cooperation on networks to test this hypothesis in primates. We have found a positive effect of brain size on cooperation in social networks even after controlling for the effect of other structural properties of networks that are known to promote cooperation.
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Submitted 5 February, 2024; v1 submitted 31 January, 2023;
originally announced February 2023.
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Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field
Authors:
Chinmoy Nath Saha,
Abhishek Vaidya,
A F M Anhar Uddin Bhuiyan,
Lingyu Meng,
Hong** Zhao,
Uttam Singisetti
Abstract:
This letter reports high-performance $\mathrmβ Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-200 nm) leads to a peak drain current (ID,MAX) of 285 mA/mm and peak trans-conductance (gm) of 52 mS/mm at 10 V drain bias with 23.5 Ohm mm on resistance (Ron). A low metal/n+ contact resistance of 0.078 Ohm mm was extract…
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This letter reports high-performance $\mathrmβ Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-200 nm) leads to a peak drain current (ID,MAX) of 285 mA/mm and peak trans-conductance (gm) of 52 mS/mm at 10 V drain bias with 23.5 Ohm mm on resistance (Ron). A low metal/n+ contact resistance of 0.078 Ohm mm was extracted from TLM measurement. Ron is dominated by interface resistance between channel and regrown layer. A gate-to-drain breakdown voltage of 192 V is measured for LGD = 355 nm resulting in average breakdown field (E_AVG) of 5.4 MV/cm. This E_AVG is the highest reported among all sub-micron gate length lateral FETs. RF measurements on 200 nm Silicon Nitride (Si3N4) passivated device shows a current gain cut off frequency (f_T) of 11 GHz and record power gain cut off frequency (f_MAX) of 48 GHz. The f_T.V_Br product is 2.11 THz.V for 192 V breakdown voltage. The switching figure of merit exceeds that of silicon and is comparable to mature wide-band gap devices.
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Submitted 2 November, 2022;
originally announced November 2022.
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ATHENA Detector Proposal -- A Totally Hermetic Electron Nucleus Apparatus proposed for IP6 at the Electron-Ion Collider
Authors:
ATHENA Collaboration,
J. Adam,
L. Adamczyk,
N. Agrawal,
C. Aidala,
W. Akers,
M. Alekseev,
M. M. Allen,
F. Ameli,
A. Angerami,
P. Antonioli,
N. J. Apadula,
A. Aprahamian,
W. Armstrong,
M. Arratia,
J. R. Arrington,
A. Asaturyan,
E. C. Aschenauer,
K. Augsten,
S. Aune,
K. Bailey,
C. Baldanza,
M. Bansal,
F. Barbosa,
L. Barion
, et al. (415 additional authors not shown)
Abstract:
ATHENA has been designed as a general purpose detector capable of delivering the full scientific scope of the Electron-Ion Collider. Careful technology choices provide fine tracking and momentum resolution, high performance electromagnetic and hadronic calorimetry, hadron identification over a wide kinematic range, and near-complete hermeticity. This article describes the detector design and its e…
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ATHENA has been designed as a general purpose detector capable of delivering the full scientific scope of the Electron-Ion Collider. Careful technology choices provide fine tracking and momentum resolution, high performance electromagnetic and hadronic calorimetry, hadron identification over a wide kinematic range, and near-complete hermeticity. This article describes the detector design and its expected performance in the most relevant physics channels. It includes an evaluation of detector technology choices, the technical challenges to realizing the detector and the R&D required to meet those challenges.
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Submitted 13 October, 2022;
originally announced October 2022.
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Active random force promotes diffusion in bacterial cytoplasm
Authors:
Lingyu Meng,
Yiteng **,
Yichao Guan,
Jiayi Xu,
Jie Lin
Abstract:
Experiments have found that diffusion in metabolically active cells is much faster than in dormant cells, especially for large particles. However, the mechanism of this size-dependent diffusion enhancement in living cells is still unclear. In this work, we approximate the net effect of metabolic processes as a white-noise active force and simulate a model system of bacterial cytoplasm with a highl…
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Experiments have found that diffusion in metabolically active cells is much faster than in dormant cells, especially for large particles. However, the mechanism of this size-dependent diffusion enhancement in living cells is still unclear. In this work, we approximate the net effect of metabolic processes as a white-noise active force and simulate a model system of bacterial cytoplasm with a highly polydisperse particle size distribution. We find that diffusion enhancement in active cells relative to dormant cells can be more substantial for large particles. Our simulations agree quantitatively with the experimental data of Escherichia coli, suggesting an autocorrelation function of the active force proportional to the cube of particle radius. We demonstrate that such a white-noise active force is equivalent to an active force of about 0.57 pN with random orientation. Our work unveils an emergent simplicity of random processes inside living cells.
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Submitted 3 April, 2023; v1 submitted 15 September, 2022;
originally announced September 2022.
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Perturbation theory for evolution of cooperation on networks
Authors:
Lingqi Meng,
Naoki Masuda
Abstract:
Network structure is a mechanism for promoting cooperation in social dilemma games. In the present study, we explore graph surgery, i.e., to slightly perturb the given network, towards a network that better fosters cooperation. To this end, we develop a perturbation theory to assess the change in the propensity of cooperation when we add or remove a single edge to/from the given network. Our pertu…
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Network structure is a mechanism for promoting cooperation in social dilemma games. In the present study, we explore graph surgery, i.e., to slightly perturb the given network, towards a network that better fosters cooperation. To this end, we develop a perturbation theory to assess the change in the propensity of cooperation when we add or remove a single edge to/from the given network. Our perturbation theory is for a previously proposed random-walk-based theory that provides the threshold benefit-to-cost ratio, $(b/c)^*$, which is the value of the benefit-to-cost ratio in the donation game above which the cooperator is more likely to fixate than in a control case, for any finite networks. We find that $(b/c)^*$ decreases when we remove a single edge in a majority of cases and that our perturbation theory captures at a reasonable accuracy which edge removal makes $(b/c)^*$ small to facilitate cooperation. In contrast, $(b/c)^*$ tends to increase when we add an edge, and the perturbation theory is not good at predicting the edge addition that changes $(b/c)^*$ by a large amount. Our perturbation theory significantly reduces the computational complexity for calculating the outcome of graph surgery.
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Submitted 23 June, 2023; v1 submitted 13 August, 2022;
originally announced August 2022.
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MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
Authors:
A F M Anhar Uddin Bhuiyan,
Zixuan Feng,
Hsien-Lien Huang,
Lingyu Meng,
**woo Hwang,
Hong** Zhao
Abstract:
Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure \k{appa}-Ga2O3 films are successfully grown on…
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Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure \k{appa}-Ga2O3 films are successfully grown on GaN-, AlN-on sapphire, and YSZ substrates through a systematical tuning of the growth parameters including the precursor molar flow rates, chamber pressure and growth temperature, whereas the growth on c-sapphire substrates leads to a mixture of \b{eta}- and \k{appa}polymorphs of Ga2O3 under the investigated growth conditions. The influence of the crystalline structure, surface morphology and roughness of \k{appa}-Ga2O3 films grown on different substrates are investigated as a function of precursor flow rate. High resolution scanning transmission electron microscopy (HR-STEM) imaging of \k{appa}-Ga2O3 films reveals abrupt interfaces between the epitaxial film and the sapphire, GaN and YSZ substrates. The growth of single crystal orthorhombic \k{appa}Ga2O3 films is confirmed by analyzing the STEM nano-diffraction pattern. The chemical composition, surface stoichiometry, and the bandgap energies of \k{appa}-Ga2O3 thin films grown on different substrates are studied by high resolution x-ray photoelectron spectroscopy (XPS) measurements. The type-II (staggered) band alignments at three interfaces between \k{appa}-Ga2O3 and c-sapphire, AlN, and YSZ substrates are determined by XPS, with the exception of \k{appa}-Ga2O3/GaN interface, which shows type I (straddling) band alignment.
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Submitted 12 October, 2022; v1 submitted 25 July, 2022;
originally announced July 2022.
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Experimental scaling of the scrape-off layer particle flux width by outboard divertor Langmuir probes with favorable Bt configuration on EAST
Authors:
X. Liu,
L. Y. Meng,
J. C. Xu,
L. Wang,
J. Li,
the EAST Team
Abstract:
The scrape-off layer (SOL) power width (λ_q) is important for predicting the heat load on divertor targets for future magnetically confined devices. Currently, the underlying physics for λ_q scaling is not fully understood. This paper extends the previous inboard SOL particle flux width (λ_{js}) scaling [Liu et al 2019 Plasma Phys. Control. Fusion 61 045001] to the outboard side in EAST, which can…
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The scrape-off layer (SOL) power width (λ_q) is important for predicting the heat load on divertor targets for future magnetically confined devices. Currently, the underlying physics for λ_q scaling is not fully understood. This paper extends the previous inboard SOL particle flux width (λ_{js}) scaling [Liu et al 2019 Plasma Phys. Control. Fusion 61 045001] to the outboard side in EAST, which can provide more experimental evidence for λ_q study. A systematic method has been developed to correct the less reliable upper outer (UO) divertor Langmuir probe (Div-LP) measurements with their more reliable neighboring measurements to reduce the measurement uncertainty of λ_js. For the discharges with the favorable Bt and upper single null configurations in the 2019 experiment campaign, about 260 discharges have been selected by certain criteria to ensure good λ_js measurements. Three H-mode, L-mode, and Ohmic databases have been constructed and are used for λ_js scalings. It is found that the outboard λ_js for the H-mode and L-mode plasmas scales as, λ_(js,UO)=1.52(W_{MHD}/n_e)^(-0.61) P_{tot}^0.19, where W_{MHD} is the stored energy, n_e is the line-averaged density, and P_{tot} is the total input power. This scaling is similar to the inboard λ_js scaling except for the scaling amplitude that is probably due the triangularity. The repeatable scaling dependence on W_{MHD}/n_e confirms the reliability of this dependence even though the regression quality is relatively poor. It is also discussed that the solely scaling of λ_q/λ_{js} on Bp is not enough to include all the physics of SOL heat transports.
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Submitted 16 February, 2023; v1 submitted 17 June, 2022;
originally announced June 2022.
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Neutron Tomography of Spent Fuel Casks
Authors:
Zhihua Liua,
Ming Fang,
Jon George,
Ling-Jian Meng,
Angela Di Fulvio
Abstract:
Dry casks for spent nuclear fuel (SNF) ensure the safe storage of SNF and provide radiation shielding. However, the presence of the thick casks encompassing several layers of steel and concrete makes inspection of the SNF a challenging task. Fast neutron interrogation is a viable method for the nondestructive assay of dry storage casks. In this study, we performed a Monte Carlo simulation-based st…
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Dry casks for spent nuclear fuel (SNF) ensure the safe storage of SNF and provide radiation shielding. However, the presence of the thick casks encompassing several layers of steel and concrete makes inspection of the SNF a challenging task. Fast neutron interrogation is a viable method for the nondestructive assay of dry storage casks. In this study, we performed a Monte Carlo simulation-based study associated with a machine-learning-based image reconstruction method to verify the content of SNF dry storage casks. We studied the use of neutron transmission and back-scattered measurements to assess the potential damage to fuel assemblies or fuel pin diversion during transportation of dry casks. We used Geant4 to model a realistic HI-STAR 100 cask, MPC-68 canister and basket, and GE-14 fuel assembly irradiated by a D-T neutron generator. Several bundle diversion scenarios were simulated. The angular distribution of the neutrons scattered by the cask was used to identify the diversions inside the fuel cask. A fuel bundle with at least 75% of its pins removed can be identified with a drop in the back-scattered signature larger than 2σ compared with a fully loaded scenario. We combined an iterative reconstruction algorithm with a convolutional neural network (CNN) to obtain a cross-sectional image of the fuel inside the cask. The proposed imaging approach allows locating the position of a missing fuel bundle with at least 75% of the pins removed when performing tomographic imaging of a canister with an overall scan time of less than two hours, when using a commercial neutron generator with a source strength of 10^10 n/s in the 4π solid angle.
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Submitted 17 October, 2021;
originally announced October 2021.
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Epidemic dynamics on metapopulation networks with node2vec mobility
Authors:
Lingqi Meng,
Naoki Masuda
Abstract:
Metapopulation models have been a powerful tool for both theorizing and simulating epidemic dynamics. In a metapopulation model, one considers a network composed of subpopulations and their pairwise connections, and individuals are assumed to migrate from one subpopulation to another obeying a given mobility rule. While how different mobility rules affect epidemic dynamics in metapopulation models…
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Metapopulation models have been a powerful tool for both theorizing and simulating epidemic dynamics. In a metapopulation model, one considers a network composed of subpopulations and their pairwise connections, and individuals are assumed to migrate from one subpopulation to another obeying a given mobility rule. While how different mobility rules affect epidemic dynamics in metapopulation models has been studied, there have been relatively few efforts on comparison of the effects of simple (i.e., unbiased) random walks and more complex mobility rules. Here we study a susceptible-infectious-susceptible (SIS) dynamics in a metapopulation model, in which individuals obey a parametric second-order random-walk mobility rule called the node2vec. We map the second-order mobility rule of the node2vec to a first-order random walk in a network whose each node is a directed edge connecting a pair of subpopulations and then derive the epidemic threshold. For various networks, we find that the epidemic threshold is large (therefore, epidemic spreading tends to be suppressed) when the individuals infrequently backtrack or infrequently visit the common neighbors of the currently visited and the last visited subpopulations than when the individuals obey the simple random walk. The amount of change in the epidemic threshold induced by the node2vec mobility is in general not as large as, but is sometimes comparable with, the one induced by the change in the diffusion rate for individuals.
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Submitted 23 December, 2021; v1 submitted 15 June, 2021;
originally announced June 2021.
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ATLAS ITk Pixel Detector Overview
Authors:
Lingxin Meng
Abstract:
For the High Luminosity upgrade of the Large Hadron Collider the current ATLAS Inner Detector will be replaced by an all-silicon Inner Tracker. The pixel detector will consist of five barrel layers and a number of rings, resulting in about 13 m^2 of instrumented area. Due to the huge non-ionising fluence (1e16 neq/cm^2) and ionising dose (5 MGy), the two innermost layers, instrumented with 3D pixe…
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For the High Luminosity upgrade of the Large Hadron Collider the current ATLAS Inner Detector will be replaced by an all-silicon Inner Tracker. The pixel detector will consist of five barrel layers and a number of rings, resulting in about 13 m^2 of instrumented area. Due to the huge non-ionising fluence (1e16 neq/cm^2) and ionising dose (5 MGy), the two innermost layers, instrumented with 3D pixel sensors and 100 um thin planar sensors, will be replaced after about five years of operation. Each pixel layer comprises hybrid detector modules that will be read out by novel ASICs, implemented in 65 nm CMOS technology, with a bandwidth of up to 5 Gbit/s. Data will be transmitted optically to the off-detector readout system. To save material in the servicing cables, serial powering is employed for the supply voltage of the readout ASICs. Large scale prototy** programmes are being carried out by all subsystems.
This paper will give an overview of the layout and current status of the development of the ITk Pixel Detector.
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Submitted 21 May, 2021;
originally announced May 2021.
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Aqueous humor dynamics in human eyes: a lattice Boltzmann study
Authors:
Zhangrong Qin,
Lingjuan Meng,
Fan Yang,
Chaoying Zhang,
Binghai Wen
Abstract:
This paper presents a lattice Boltzmann model to simulate the aqueous humor (AH) dynamics in the human eyes by involving incompressible Navier-Stokes flow, heat convection and diffusion, and Darcy seepage flow. Verifying simulations indicate that the model is stable, convergent and robust. Further investigations were carried out, including the effects of heat convection and buoyancy, AH production…
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This paper presents a lattice Boltzmann model to simulate the aqueous humor (AH) dynamics in the human eyes by involving incompressible Navier-Stokes flow, heat convection and diffusion, and Darcy seepage flow. Verifying simulations indicate that the model is stable, convergent and robust. Further investigations were carried out, including the effects of heat convection and buoyancy, AH production rate, permeability of trabecular meshwork, viscosity of AH and anterior chamber angle on intraocular pressure (IOP). The heat convection and diffusion can significantly affect the flow patterns in the healthy eye, and the IOP can be controlled by increasing the anterior chamber angle or decreasing the secretion rate, the drainage resistance and viscosity of AH. However, the IOP is insensitive to the viscosity of the AH, which may be one of the causes that the viscosity would not have been considered as a factor for controlling the IOP. It's interesting that all these factors have more significant influences on the IOP in pathologic eyes than healthy ones. The temperature difference and the eye-orientation have obvious influence on the cornea and iris wall shear stresses. The present model and simulation results are expected to provide an alternative tool and theoretical reference for the study of AH dynamics.
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Submitted 24 February, 2021;
originally announced February 2021.
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Large-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off
Authors:
Yixiong Zheng,
Zixuan Feng,
A F M Anhar Uddin Bhuiyan,
Lingyu Meng,
Samyak Dhole,
Quanxi Jia,
Hong** Zhao,
Jung-Hun Seo
Abstract:
In this paper, we have demonstrated the large-size free-standing single-crystal b-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown b-Ga2O3 epifilms on native substrates. The optimum implantation conditions were simulated with a Monte-Carlo simulation to obtain the high hydrogen concentration with a narrow ion distribution at the desired depth. Two as…
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In this paper, we have demonstrated the large-size free-standing single-crystal b-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown b-Ga2O3 epifilms on native substrates. The optimum implantation conditions were simulated with a Monte-Carlo simulation to obtain the high hydrogen concentration with a narrow ion distribution at the desired depth. Two as grown b-Ga2O3 samples with different orientation ([100] and [001]) were used and successfully create 1.2 um thick b-Ga2O3 NMs without any physical damages. These b-Ga2O3 NMs were then transfer-printed onto rigid and flexible substrates such as SiC substrate and polyimide substrate. Various material characterizations were performed to investigate the crystal quality, surface morphology, optical property, mechanical property, and bandgap before and after the lift-off and revealed that good material quality is maintained. This result offers several benefits in that the thickness, do**, and size of b-Ga2O3 NMs can be fully controlled. Moreover, more advanced b-Ga2O3-based NM structures such as (AlxGa1-x)2O3/Ga2O3 heterostructure NMs can be directly created from their bulk epitaxy substrates thus this result provides a viable route for the realization of high performance b-Ga2O3 NM-based electronics and optoelectronics that can be built on various substrates and platforms.
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Submitted 11 February, 2021;
originally announced February 2021.
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Spatial distributions of Balmer series emissions in divertor plasmas with tungsten targets in different magnetic configurations on the EAST superconducting tokamak
Authors:
Kunpei Nojiri,
Naoko Ashikawa,
Yasuhiro Suzuki,
Yaowei Yu,
Zhenhua Hu,
Fang Ding,
Liang Wang,
Lingyi Meng,
Xiahua Chen,
Jie Huang,
Zhongshi Yang,
Tetsutaro Oishi,
Mizuki Sakamoto,
Jiansheng Hu,
Guangnan Luo
Abstract:
The characteristics of wall recycling with different divertor configurations were investigated in this study, focusing on the observations of the spatial distributions of deuterium atomic emissions in the Balmer series (D_α, D_β, D_γ, and D_δ) with different magnetic field configurations in the Experimental Advanced Superconducting Tokamak. The observed D_α and D_β emissions were primarily relativ…
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The characteristics of wall recycling with different divertor configurations were investigated in this study, focusing on the observations of the spatial distributions of deuterium atomic emissions in the Balmer series (D_α, D_β, D_γ, and D_δ) with different magnetic field configurations in the Experimental Advanced Superconducting Tokamak. The observed D_α and D_β emissions were primarily relatively close to the divertor targets, while the D_γ and D_δ emissions were primarily relatively close to the X-point. The distributions of the emissions close to the divertor targets and X-point changed differently depending on the divertor configuration. These experimental results indicate that the linear comparison of parameters based on an assumption of similarity of profile shapes in different configurations is insufficient for understanding particle recycling in divertor plasmas. This is because the shape of the density profile of the recycled deuterium atoms and/or the electron density and temperature may change when the magnetic configuration is altered.
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Submitted 30 September, 2020;
originally announced September 2020.
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Analysis of node2vec random walks on networks
Authors:
Lingqi Meng,
Naoki Masuda
Abstract:
Random walks have been proven to be useful for constructing various algorithms to gain information on networks. Algorithm node2vec employs biased random walks to realize embeddings of nodes into low-dimensional spaces, which can then be used for tasks such as multi-label classification and link prediction. The performance of the node2vec algorithm in these applications is considered to depend on p…
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Random walks have been proven to be useful for constructing various algorithms to gain information on networks. Algorithm node2vec employs biased random walks to realize embeddings of nodes into low-dimensional spaces, which can then be used for tasks such as multi-label classification and link prediction. The performance of the node2vec algorithm in these applications is considered to depend on properties of random walks that the algorithm uses. In the present study, we theoretically and numerically analyze random walks used by the node2vec. Those random walks are second-order Markov chains. We exploit the map** of its transition rule to a transition probability matrix among directed edges to analyze the stationary probability, relaxation times in terms of the spectral gap of the transition probability matrix, and coalescence time. In particular, we show that node2vec random walk accelerates diffusion when walkers are designed to avoid both back-tracking and visiting a neighbor of the previously visited node but do not avoid them completely.
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Submitted 20 December, 2021; v1 submitted 8 June, 2020;
originally announced June 2020.
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Scalable Heterogeneous Social Network Alignment through Synergistic Graph Partition
Authors:
Yuxiang Ren,
Lin Meng,
Jiawei Zhang
Abstract:
Social network alignment has been an important research problem for social network analysis in recent years. With the identified shared users across networks, it will provide researchers with the opportunity to achieve a more comprehensive understanding of users' social activities both within and across networks. Social network alignment is a very difficult problem. Besides the challenges introduc…
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Social network alignment has been an important research problem for social network analysis in recent years. With the identified shared users across networks, it will provide researchers with the opportunity to achieve a more comprehensive understanding of users' social activities both within and across networks. Social network alignment is a very difficult problem. Besides the challenges introduced by the network heterogeneity, the network alignment problem can be reduced to a combinatorial optimization problem with an extremely large search space. The learning effectiveness and efficiency of existing alignment models will be degraded significantly as the network size increases. In this paper, we will focus on studying the scalable heterogeneous social network alignment problem, and propose to address it with a novel two-stage network alignment model, namely \textbf{S}calable \textbf{H}eterogeneous \textbf{N}etwork \textbf{A}lignment (SHNA). Based on a group of intra- and inter-network meta diagrams, SHNA first partitions the social networks into a group of sub-networks synergistically. Via the partially known anchor links, SHNA will extract the partitioned sub-network correspondence relationships. Instead of aligning the complete input network, SHNA proposes to identify the anchor links between the matched sub-network pairs, while those between the unmatched sub-networks will be pruned to effectively shrink the search space. Extensive experiments have been done to compare SHNA with the state-of-the-art baseline methods on a real-world aligned social networks dataset. The experimental results have demonstrated both the effectiveness and efficiency of the {\our} model in addressing the problem.
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Submitted 4 July, 2020; v1 submitted 17 December, 2019;
originally announced December 2019.
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SHG (532 nm)-induced spontaneous parametric downconversion noise in 1064 nm-pumped IR upconversion detectors
Authors:
L. Meng,
A. Padhye,
C. Pedersen,
M. Ebrahim-Zadeh,
P. J. Rodrigo
Abstract:
As a novel technique for infrared detection, frequency upconversion has been successfully deployed in many applications. However, investigations into the noise properties of upconversion detectors (UCDs) have also received considerable attention. In this letter, we present a new noise source - second harmonic generation (SHG)-induced spontaneous parametric downconversion (SPDC) - experimentally an…
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As a novel technique for infrared detection, frequency upconversion has been successfully deployed in many applications. However, investigations into the noise properties of upconversion detectors (UCDs) have also received considerable attention. In this letter, we present a new noise source - second harmonic generation (SHG)-induced spontaneous parametric downconversion (SPDC) - experimentally and theoretically shown to exist in short-wavelength-pumped UCDs. We investigate the noise properties of two UCDs based on single-pass 1064 nm-pumped periodically poled LiNbO$_{3}$ bulk crystals. One UCD is designed to detect signals in the telecom band and the other in the mid-infrared regime. Our experimental demonstration and theoretical analysis reveal the basic properties of this newly discovered UCD noise source, including its dependence on crystal temperature and pump power. Furthermore, the principle behind the generation of this noise source can also be applied to other UCDs, which utilize nonlinear crystals either in waveguide form or with different bulk materials. This study may also aid in develo** methods to suppress the newly identified noise in future UCD designs.
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Submitted 1 March, 2019;
originally announced March 2019.
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Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation
Authors:
John Anders,
Mathieu Benoit,
Saverio Braccini,
Raimon Casanova,
Hucheng Chen,
Kai Chen,
Francesco Armando di Bello,
Armin Fehr,
Didier Ferrere,
Dean Forshaw,
Tobias Golling,
Sergio Gonzalez-Sevilla,
Giuseppe Iacobucci,
Moritz Kiehn,
Francesco Lanni,
Hongbin Liu,
Lingxin Meng,
Claudia Merlassino,
Antonio Miucci,
Marzio Nessi,
Ivan Perić,
Marco Rimoldi,
D M S Sultan,
Mateus Vincente Barreto Pinto,
Eva Vilella
, et al. (4 additional authors not shown)
Abstract:
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.
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Submitted 25 July, 2018;
originally announced July 2018.
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Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate
Authors:
M. Benoit,
S. Braccini,
R. Casanova,
E. Cavallaro,
H. Chen,
K. Chen,
F. A. Di Bello,
D. Ferrere,
D. Frizzell,
T. Golling,
S. Gonzalez-Sevilla,
S. Grinstein,
G. Iacobucci,
M. Kiehn,
F. Lanni,
H. Liu,
J. Metcalfe,
L. Meng,
C. Merlassino,
A. Miucci,
D. Muenstermann,
M. Nessi,
H. Okawa,
I. Perić,
M. Rimoldi
, et al. (12 additional authors not shown)
Abstract:
In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning fr…
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In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning from $\mathrm{80}$ to $\mathrm{1000~Ω\cdot cm}$. A glueing process using a high-precision flip-chip machine was developed in order to capacitively couple the sensors to FE-I4 Readout ASIC using a thin layer of epoxy glue with good uniformity over a large surface. The resulting assemblies were measured in beam test at the Fermilab Test Beam Facilities with 120 GeV protons and CERN SPS H8 beamline using 80 GeV pions. The in-time efficiency and tracking properties measured for the different sensor types are shown to be compatible with the ATLAS ITk requirements for its pixel sensors.
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Submitted 3 December, 2018; v1 submitted 22 December, 2017;
originally announced December 2017.
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The effect of hydroxyl on dye-sensitized solar cells assembled with TiO2 nanorods
Authors:
Lijian Meng,
Tao Yang,
Sining Yun,
Can Li
Abstract:
TiO2 nanorods have been prepared on ITO substrates by dc reactive magnetron sputtering technique. The hydroxyl groups have been introduced on the nanorods surface. The structure and the optical properties of these nanorods have been studied. The dye-sensitized solar cells (DSSCs) have been assembled using these TiO2 nanorods as photoelectrode. And the effect of the hydroxyl groups on the propertie…
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TiO2 nanorods have been prepared on ITO substrates by dc reactive magnetron sputtering technique. The hydroxyl groups have been introduced on the nanorods surface. The structure and the optical properties of these nanorods have been studied. The dye-sensitized solar cells (DSSCs) have been assembled using these TiO2 nanorods as photoelectrode. And the effect of the hydroxyl groups on the properties of the photoelectric conversion of the DSSCs has been studied.
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Submitted 28 November, 2017;
originally announced November 2017.
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Investigations into the impact of locally modified sensor architectures on the detection efficiency of silicon micro-strip sensors
Authors:
Luise Poley,
Kristin Lohwasser,
Andrew Blue,
Mathieu Benoit,
Ingo Bloch,
Sergio Diez,
Vitaliy Fadeyev,
Bruce Gallop,
Ashley Greenall,
Ingrid-Maria Gregor,
John Keller,
Carlos Lacasta,
Dzmitry Maneuski,
Lingxin Meng,
Marko Milovanovic,
Ian Pape,
Peter W. Phillips,
Laura Rehnisch,
Kawal Sawhney,
Craig Sawyer,
Dennis Sperlich,
Martin Stegler,
Yoshinobu Unno,
Matt Warren,
Eda Yildirim
Abstract:
The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam studies of prototype modules, sil…
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The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam studies of prototype modules, silicon sensor strips were found to respond in regions varying from the strip pitch of 74.5 {\upmu}m. The variations have been linked to local features of the sensor architecture. This paper presents results of detailed sensor measurements in both X-ray and particle beams investigating the impact of sensor features (metal pads and p-stops) on the responding area of a sensor strip.
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Submitted 3 July, 2017; v1 submitted 18 November, 2016;
originally announced November 2016.
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Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes
Authors:
M. Benoit,
S. Braccini,
G. Casse,
H. Chen,
K. Chen,
F. A. Di Bello,
D. Ferrere,
T. Golling,
S. Gonzalez-Sevilla,
G. Iacobucci,
M. Kiehn,
F. Lanni,
H. Liu,
L. Meng,
C. Merlassino,
A. Miucci,
D. Muenstermann,
M. Nessi,
H. Okawa,
I. Peric,
M. Rimoldi,
B. Ristic,
M. Vicente Barrero Pinto,
J. Vossebeld,
M. Weber
, et al. (4 additional authors not shown)
Abstract:
HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the $4^{\mathrm{th}}$ generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the am…
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HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the $4^{\mathrm{th}}$ generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between $1\cdot 10^{14}$ and $5\cdot 10^{15}$ 1-MeV-n$_\textrm{eq}$/cm$^2$. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of $85\,$V. The sample irradiated to a fluence of $1\cdot 10^{15}$ n$_\textrm{eq}$/cm$^2$ - a relevant value for a large volume of the upgraded tracker - exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.
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Submitted 28 November, 2017; v1 submitted 8 November, 2016;
originally announced November 2016.
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Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype
Authors:
M. Benoit,
J. Bilbao de Mendizabal,
G. Casse,
H. Chen,
K. Chen,
F. A. Di Bello,
D. Ferrere,
T. Golling,
S. Gonzalez-Sevilla,
G. Iacobucci,
F. Lanni,
H. Liu,
F. Meloni,
L. Meng,
A. Miucci,
D. Muenstermann,
M. Nessi,
I. Peric,
M. Rimoldi,
B. Ristic,
M. Vicente Barrero Pinto,
J. Vossebeld,
M. Weber,
W. Wu,
L. Xu
Abstract:
Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of track…
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Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.
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Submitted 30 June, 2016; v1 submitted 24 March, 2016;
originally announced March 2016.
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Reaching 5E-13 short term frequency stability of the integrating sphere cold atom clock
Authors:
P Liu,
Y L Meng,
J Y Wan,
X M Wang,
Y N Wang,
L Xiao,
H D Cheng,
L Liu
Abstract:
We present an improvement of short term frequency stability of the integrating sphere cold atom clock after increasing the intensities of clock signals and optimizing the feedback loop of the clock. A short term frequency stability of $5.0\times10^{-13}τ^{-1/2}$ has been achieved and the limiting factors have been analyzed.
We present an improvement of short term frequency stability of the integrating sphere cold atom clock after increasing the intensities of clock signals and optimizing the feedback loop of the clock. A short term frequency stability of $5.0\times10^{-13}τ^{-1/2}$ has been achieved and the limiting factors have been analyzed.
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Submitted 11 January, 2016;
originally announced January 2016.
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Observing Abnormally Large Group Velocity at the Plasmonic Band Edge via a Universal Eigenvalue Analysis
Authors:
Wei E. I. Sha,
Ling Ling Meng,
Wallace C. H. Choy,
Weng Cho Chew
Abstract:
We developed a novel universal eigenvalue analysis for 2D arbitrary nanostructures comprising dispersive and lossy materials. The complex dispersion relation (or complex Bloch band structure) of a metallic grating is rigorously calculated by the proposed algorithm with the finite-difference implementation. The abnormally large group velocity is observed at a plasmonic band edge with a large attenu…
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We developed a novel universal eigenvalue analysis for 2D arbitrary nanostructures comprising dispersive and lossy materials. The complex dispersion relation (or complex Bloch band structure) of a metallic grating is rigorously calculated by the proposed algorithm with the finite-difference implementation. The abnormally large group velocity is observed at a plasmonic band edge with a large attenuation constant. Interestingly, we found the abnormal group velocity is caused by the leaky (radiation) loss not by metallic absorption (Ohmic) loss. The periodically modulated surface of the grating significantly modifies the original dispersion relation of the semi-infinite dielectric-metal structure and induces the extraordinarily large group velocity, which is different from the near-zero group velocity at photonic band edge. The work is fundamentally important to the design of plasmonic nanostructures.
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Submitted 30 June, 2015;
originally announced July 2015.
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Longitudinal Schottky spectra of a bunched Ne10+ ion beam at the CSRe
Authors:
W. Q. Wen,
X. Ma,
D. C. Zhang,
X. L. Zhu,
L. J. Meng,
J. Li,
H. P. Liu,
D. M. Zhao,
Z. S. Wang,
R. S. Mao,
T. C. Zhao,
J. X. Wu,
X. M. Ma,
T. L. Yan,
G. H. Li,
X. D. Yang,
Y. Liu,
J. C. Yang,
Y. J. Yuan,
J. W. Xia,
H. S. Xu,
G. Q. Xiao,
H. W. Zhao
Abstract:
The longitudinal Schottky spectra of a radio-frequency (RF) bunched and electron cooled 22Ne10+ ion beam at 70 MeV/u have been studied by a newly installed resonant Schottky pick-up at the experimental cooler storage ring (CSRe), at IMP. For an RF-bunched ion beam, a longitudinal momentum spread of has been reached with less than 107 stored ions. The reduction of momentum spread compared with coas…
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The longitudinal Schottky spectra of a radio-frequency (RF) bunched and electron cooled 22Ne10+ ion beam at 70 MeV/u have been studied by a newly installed resonant Schottky pick-up at the experimental cooler storage ring (CSRe), at IMP. For an RF-bunched ion beam, a longitudinal momentum spread of has been reached with less than 107 stored ions. The reduction of momentum spread compared with coasting ion beam was observed from Schottky noise signal of the bunched ion beam. In order to prepare the future laser cooling experiment at the CSRe, the RF-bunching power was modulated at 25th, 50th and 75th harmonic of the revolution frequency, effective bunching amplitudes were extracted from the Schottky spectrum analysis. Applications of Schottky noise for measuring beam lifetime with ultra-low intensity of ion beams are presented, and it is relevant to upcoming experiments on laser cooling of relativistic heavy ion beams and nuclear physics at the CSRe.
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Submitted 22 May, 2013;
originally announced May 2013.
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Test of detuning system for dielectronic recombination experiment at CSRm
Authors:
L. J. Meng,
X. Ma,
V. V. Parkhomchuk,
D. Yang,
V. B. Reva,
J. Li,
L. J. Mao,
X. M. Ma,
T. L. Yan,
J. W. Xia,
Y. J. Yuan,
H. S. Xu,
J. C. Yang,
G. Q. Xiao
Abstract:
The storage ring equipped with an electron cooler is an ideal platform for dielectronic recombination (DR) experiments. In order to fulfil the requirement of DR measurements at the main Cooler Storage Ring, a detuning system for the precision control of the relative energy between the ion beam and the electron beam has been installed on the electron cooler device. The test run using 7.0 MeV/u C6+…
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The storage ring equipped with an electron cooler is an ideal platform for dielectronic recombination (DR) experiments. In order to fulfil the requirement of DR measurements at the main Cooler Storage Ring, a detuning system for the precision control of the relative energy between the ion beam and the electron beam has been installed on the electron cooler device. The test run using 7.0 MeV/u C6+ beam was performed to examine the influence of this system on the performance of the stored ion beam. The Schottky spectra and the ion beam currents were recorded to monitor the beam status. The influence of pulse heights and widths of the detuning voltage on the ion beam was investigated. For the small pulse height, the experimental results from the Schottky spectrum were in good agreement with the theoretical results. The frequency shift in the Schottky spectrum is significantly reduced for the short pulse width. For the large pulse height, an oscillation phenomenon was observed. From the Schottky spectrum, we found the oscillation amplitude is dependent on the pulse width of detuning and the ion beam intensity. The detailed description of the phenomenon and the theoretical model based on the plasma oscillation was discussed in this paper.
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Submitted 14 February, 2012;
originally announced February 2012.
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Phonons and Magnetic Excitations in Mott-Insulator LaTiO$_3$
Authors:
M. N. Iliev,
A. P. Litvinchuk,
M. V. Abrashev,
V. N. Popov,
J. Cmaidalka,
B. Lorenz,
R. L. Meng
Abstract:
The polarized Raman spectra of stoichiometric LaTiO$_3$ (T$_N = 150$ K) were measured between 6 and 300 K. In contrast to earlier report on half-metallic LaTiO$_{3.02}$, neither strong background scattering, nor Fano shape of the Raman lines was observed. The high frequency phonon line at 655 cm$^{-1}$ exhibits anomalous softening below T$_N$: a signature for structural rearrangement. The assign…
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The polarized Raman spectra of stoichiometric LaTiO$_3$ (T$_N = 150$ K) were measured between 6 and 300 K. In contrast to earlier report on half-metallic LaTiO$_{3.02}$, neither strong background scattering, nor Fano shape of the Raman lines was observed. The high frequency phonon line at 655 cm$^{-1}$ exhibits anomalous softening below T$_N$: a signature for structural rearrangement. The assignment of the Raman lines was done by comparison to the calculations of lattice dynamics and the nature of structural changes upon magnetic ordering are discussed. The broad Raman band, which appears in the antiferromagnetic phase, is assigned to two-magnon scattering. The estimated superexchange constant $J = 15.4\pm0.5$ meV is in excellent agreement with the result of neutron scattering studies.
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Submitted 21 October, 2003;
originally announced October 2003.
