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Ultra-Wide Bandgap Ga$_2$O$_3$-on-SiC MOSFETs
Authors:
Yiwen Song,
Arkka Bhattacharyya,
Anwarul Karim,
Daniel Shoemaker,
Hsien-Lien Huang,
Saurav Roy,
Craig McGray,
Jacob H. Leach,
**woo Hwang,
Sriram Krishnamoorthy,
Sukwon Choi
Abstract:
Ulta-wide bandgap semiconductors based on $β$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the commercialization of Ga$_2$O$_3$ electronics is overheating, which impacts the device's performance and reliability. We fabricated a Ga$_2$O…
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Ulta-wide bandgap semiconductors based on $β$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the commercialization of Ga$_2$O$_3$ electronics is overheating, which impacts the device's performance and reliability. We fabricated a Ga$_2$O$_3$/4H-SiC composite wafer using a fusion-bonding method. A low temperature ($\le$ 600 $^{\circ}$C) epitaxy and device processing approach based on low-temperature (LT) metalorganic vapor phase epitaxy is developed to grow a Ga$_2$O$_3$ epitaxial channel layer on the composite wafer and subsequently fabricate into Ga$_2$O$_3$ power MOSFETs. This LT approach is essential to preserve the structural integrity of the composite wafer. These LT-grown epitaxial Ga$_2$O$_3$ MOSFETs deliver high thermal performance (56% reduction in channel temperature), high voltage blocking capabilities up to 2.45 kV, and power figures of merit of $\sim$ 300 MW/cm$^2$, which is a record high for any heterogeneously integrated Ga$_2$O$_3$ devices reported to date. This work is the first realization of multi-kilovolt homoepitaxial Ga$_2$O$_3$ power MOSFETs fabricated on a composite substrate with high heat transfer performance which delivers state-of-the-art power density values while running much cooler than those on native substrates. Thermal characterization and modeling results reveal that a Ga$_2$O$_3$/diamond composite wafer with a reduced Ga$_2$O$_3$ thickness ($\sim$ 1 $μ$m) and thinner bonding interlayer ($<$ 10 nm) can reduce the device thermal impedance to a level lower than today's GaN-on-SiC power switches.
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Submitted 21 February, 2023; v1 submitted 13 October, 2022;
originally announced October 2022.
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Accurate localization microscopy by intrinsic aberration calibration
Authors:
Craig R. Copeland,
Craig D. McGray,
B. Robert Ilic,
Jon Geist,
Samuel M. Stavis
Abstract:
A standard paradigm of localization microscopy involves extension from two to three dimensions by engineering information into emitter images, and approximation of errors resulting from the field dependence of optical aberrations. We invert this standard paradigm, introducing the concept of fully exploiting the latent information of intrinsic aberrations by comprehensive calibration of an ordinary…
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A standard paradigm of localization microscopy involves extension from two to three dimensions by engineering information into emitter images, and approximation of errors resulting from the field dependence of optical aberrations. We invert this standard paradigm, introducing the concept of fully exploiting the latent information of intrinsic aberrations by comprehensive calibration of an ordinary microscope, enabling accurate localization of single emitters in three dimensions throughout an ultrawide and deep field. To complete the extraction of spatial information from microscale bodies ranging from imaging substrates to microsystem technologies, we introduce a synergistic concept of the rigid transformation of the positions of multiple emitters in three dimensions, improving precision, testing accuracy, and yielding measurements in six degrees of freedom. Our study illuminates the challenge of aberration effects in localization microscopy, redefines the challenge as an opportunity for accurate, precise, and complete localization, and elucidates the performance and reliability of a complex microelectromechanical system.
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Submitted 2 July, 2021; v1 submitted 2 September, 2020;
originally announced September 2020.
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Particle tracking of microelectromechanical system performance and reliability
Authors:
Craig R. Copeland,
Craig D. McGray,
Jon Geist,
Samuel M. Stavis
Abstract:
Microelectromechanical systems (MEMS) that require contact of moving parts to implement complex functions exhibit limits to their performance and reliability. Here, we advance our particle tracking method to measure MEMS motion in operando at nanometer, microradian, and millisecond scales. We test a torsional ratcheting actuator and observe dynamic behavior ranging from nearly perfect repeatabilit…
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Microelectromechanical systems (MEMS) that require contact of moving parts to implement complex functions exhibit limits to their performance and reliability. Here, we advance our particle tracking method to measure MEMS motion in operando at nanometer, microradian, and millisecond scales. We test a torsional ratcheting actuator and observe dynamic behavior ranging from nearly perfect repeatability, to transient feedback and stiction, to terminal failure. This new measurement capability will help to understand and improve MEMS motion.
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Submitted 19 November, 2018; v1 submitted 2 July, 2018;
originally announced July 2018.
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Subnanometer localization accuracy in widefield optical microscopy
Authors:
Craig R. Copeland,
Jon Geist,
Craig D. McGray,
Vladimir A. Aksyuk,
J. Alexander Liddle,
B. Robert Ilic,
Samuel M. Stavis
Abstract:
The common assumption that precision is the limit of accuracy in localization microscopy and the typical absence of comprehensive calibration of optical microscopes lead to a widespread issue - overconfidence in measurement results with nanoscale statistical uncertainties that can be invalid due to microscale systematic errors. In this article, we report a comprehensive solution to this underappre…
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The common assumption that precision is the limit of accuracy in localization microscopy and the typical absence of comprehensive calibration of optical microscopes lead to a widespread issue - overconfidence in measurement results with nanoscale statistical uncertainties that can be invalid due to microscale systematic errors. In this article, we report a comprehensive solution to this underappreciated problem. We develop arrays of subresolution apertures into the first reference materials that enable localization errors approaching the atomic scale across a submillimeter field. We present novel methods for calibrating our microscope system using aperture arrays and develop aberration corrections that reach the precision limit of our reference materials. We correct and register localization data from multiple colors and test different sources of light emission with equal accuracy, indicating the general applicability of our reference materials and calibration methods. In a first application of our new measurement capability, we introduce the concept of critical dimension localization microscopy, facilitating tests of nanofabrication processes and quality control of aperture arrays. In a second application, we apply these stable reference materials to answer open questions about the apparent instability of fluorescent nanoparticles that commonly serve as fiducial markers. Our study establishes a foundation for subnanometer localization accuracy in widefield optical microscopy.
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Submitted 22 May, 2018; v1 submitted 26 October, 2017;
originally announced October 2017.
