Showing 1–8 of 8 results for author: Mazumder, B

Fast, multicolour optical sectioning over extended fields of view by combining interferometric SIM with machine learning

Authors: Edward N. Ward, Rebecca M. McClelland, Jacob R. Lamb, Roger Rubio-Sánchez, Charles N. Christensen, Bismoy Mazumder, Sofia Kapsiani, Luca Mascheroni, Lorenzo Di Michele, Gabriele S. Kaminski Schierle, Clemens F. Kaminski

Abstract: Structured illumination can reject out-of-focus signal from a sample, enabling high-speed and high-contrast imaging over large areas with widefield detection optics. Currently, this optical-sectioning technique is limited by image reconstruction artefacts and the need for sequential imaging of multiple colour channels. We combine multicolour interferometric pattern generation with machine-learning… ▽ More Structured illumination can reject out-of-focus signal from a sample, enabling high-speed and high-contrast imaging over large areas with widefield detection optics. Currently, this optical-sectioning technique is limited by image reconstruction artefacts and the need for sequential imaging of multiple colour channels. We combine multicolour interferometric pattern generation with machine-learning processing, permitting high-contrast, real-time reconstruction of image data. The method is insensitive to background noise and unevenly phase-stepped illumination patterns. We validate the method in silico and demonstrate its application on diverse specimens, ranging from fixed and live biological cells to synthetic biosystems, imaging at up to 37 Hz across a 44 x 44 $μm^2$ field of view. △ Less

Submitted 31 October, 2023; originally announced November 2023.

Investigation of the Imperfect Interface at the Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer

Authors: Md Nazmul Hasan, Yixiong Zheng, Junyu Lai, Edward Swinnich, Olivia Grace Licata, Mohadeseh A. Baboli, Baishakhi Mazumder, Parsian K. Mohseni, Jung-Hun Seo

Abstract: The structure property of non-ideal Si/GaAs heterostructures that were integrated with the ultra-thin oxide (UO) tunneling interfacial layer has been systematically investigated. Si nanomembranes (NMs) were oxidized in different time periods prior to the hetero-integration process to create the non-ideal single-side passivated Si/GaAs heterostructure. The atomic level oxygen distribution and the d… ▽ More The structure property of non-ideal Si/GaAs heterostructures that were integrated with the ultra-thin oxide (UO) tunneling interfacial layer has been systematically investigated. Si nanomembranes (NMs) were oxidized in different time periods prior to the hetero-integration process to create the non-ideal single-side passivated Si/GaAs heterostructure. The atomic level oxygen distribution and the degree of oxygen content in Si NM and GaAs were carefully investigated using the atom probe tomography (APT) and X-ray photoelectron spectroscopy (XPS) to trace the changes in chemical composition and reactional mechanism across the UO interface when the surface of Si NM was exposed to air for different period of time. The negatively induced charges at the UO layer caused the oxygen diffusion to GaAs layer and formed the unwanted GaAs oxide layer. This native oxide stack noticeably degraded the thermal properties of the Si/GaAs heterostructure as Si NMs were more oxidized. This study revealed that the poor surface passivation on the one side of the heterointerface leads to a both-side oxidation, thus severely deteriorating the transport properties across the heterojunction that is formed with the UO layer. △ Less

Submitted 24 October, 2021; originally announced October 2021.

Comments: arXiv admin note: substantial text overlap with arXiv:2107.06983

Electrical and Thermal Property of Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer

Authors: Md Nazmul Hasan, Yixiong Zheng, Junyu Lai, Edward Swinnich, Olivia Grace Licata, Mohadeseh A. Baboli, Baishakhi Mazumder, Parsian K. Mohseni, Jung-Hun Seo

Abstract: We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in the conduction band (0.03 eV) at the interface. The interface defect density (Dit) values of the heterointerface with different ultra-thin oxide (UO) thicknesse… ▽ More We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in the conduction band (0.03 eV) at the interface. The interface defect density (Dit) values of the heterointerface with different ultra-thin oxide (UO) thicknesses ranged from 0.35 nm to 3.5 nm and were also characterized based on a metal-oxide-semiconductor capacitor (MOSCAP) structure using a capacitance-voltage measurement. The results revealed that a thin UO interfacial layer (around 1 nm) maximizes carrier transport property due to better surface passivation and efficient tunneling properties. Thermal property investigation also shows that the Al2O3 UO interfacial layer offers a good tunneling layer but also facilitates phonon transport across the interface. Finally, the electrical characterization of Si/GaAs heterojunction p-n diodes confirms reliable rectifying behavior with an extremely low ideality factor; thus, heterogeneous integration using the UO approach offers a robust way to create more types of heterojunctions between dissimilar semiconductors. △ Less

Submitted 24 October, 2021; v1 submitted 14 July, 2021; originally announced July 2021.

Comments: This manuscript has been revised with a slightly different title and focuses

Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography

Authors: Jith Sarker, A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hong** Zhao, Baishakhi Mazumder

Abstract: In this work, the interaction of n-type dopants in Si doped (AlxGa1-x)2O3 films with varying Al content over the entire composition range (x = 0-100%) was analyzed using atom probe tomography. An almost uniform dopant distribution with dopant density in the range of 1018 cm-3 was obtained in all (AlxGa1-x)2O3 layers containing different Al contents. We have demonstrated that for the single phase \… ▽ More In this work, the interaction of n-type dopants in Si doped (AlxGa1-x)2O3 films with varying Al content over the entire composition range (x = 0-100%) was analyzed using atom probe tomography. An almost uniform dopant distribution with dopant density in the range of 1018 cm-3 was obtained in all (AlxGa1-x)2O3 layers containing different Al contents. We have demonstrated that for the single phase \b{eta}-(AlxGa1-x)2O3 films with Al content of x<0.30, dopants prefer to occupy on Ga sites while Al site is preferred for high Al content (x>0.50) (AlxGa1-x)2O3 layers. It was also observed for Al content, x = 0.30-0.50, no specific cationic site occupancy was observed, Si occupies either Al or Ga sites. This can be attributed to highly inhomogeneous layers within this composition range due to which dopant Si atoms are either in the Al-rich or Al-depleted regions. △ Less

Submitted 2 September, 2020; originally announced September 2020.

Development of bed forms due to waves blocked by a counter current

Authors: Debasmita Chatterjee, Subir Ghosh, B. S. Mazumder, K. Sarkar

Abstract: Experiments are conducted in a laboratory flume on the propagation of a surface wave against unidirectional flow with a sediment bed. This paper presents the spatial variation of bed forms induced by the wave-blocking phenomenon by a suitably tuned uniform fluid flow and a counter-propagating wave. The occurrence of wave-blocking is confirmed by finding a critical wave frequency in a particular fl… ▽ More Experiments are conducted in a laboratory flume on the propagation of a surface wave against unidirectional flow with a sediment bed. This paper presents the spatial variation of bed forms induced by the wave-blocking phenomenon by a suitably tuned uniform fluid flow and a counter-propagating wave. The occurrence of wave-blocking is confirmed by finding a critical wave frequency in a particular flow discharge in which the waves are effectively blocked and is established using the linear dispersion relation. The novelty of this work is to identify the wave-blocking and its influence on the development of bed forms over the sediment bed. Interesting bed form signatures are observed at a transition of bed forms in three zones, with asymmetric ripples having a steeper slope downstream face induced by the incoming current, followed by flat sand bars beneath the wave-blocking zone and more symmetric ripples below the wave-dominated region at the downstream. This phenomenon suggests that the sediment bed is segmented into three different regions of bed geometry along the flow. The deviations of mean flows, Reynolds stresses, turbulent kinetic energy, and power spectral density due to the wave-blocking phenomenon are presented along the non-uniform flow over sediment bed. The bottom shear stress, bed roughness and stochastic nature of the bed form features are also discussed. The results are of relevance to engineers and geoscientists concerned with contemporary process as well as those interested in the interpretation of palaeoenvironmental conditions from fossil bed forms. △ Less

Submitted 11 December, 2018; originally announced December 2018.

Comments: Accepted for publication in Earth Surface Processes and Landforms

Turbulence characteristics of wave-blocking phenomena

Authors: Debasmita Chatterjee, B. S. Mazumder, Subir Ghosh

Abstract: This study explores experimentally the turbulent flow in a laboratory flume, interacting with waves propagated against the flow. It focuses a region of wave-blocking for which there is a streamwise location on the water surface, where the wave propagation velocity vanishes. The observations are corroborated by finding a critical wave frequency for a particular discharge above which the waves are e… ▽ More This study explores experimentally the turbulent flow in a laboratory flume, interacting with waves propagated against the flow. It focuses a region of wave-blocking for which there is a streamwise location on the water surface, where the wave propagation velocity vanishes. The observations are corroborated by finding a critical wave frequency for a particular discharge above which the waves are effectively blocked; and verified by the dispersion relation of monochromatic wave. The counter-current propagating waves show an evolutionary change in the flow with three segmented regions, viz, flow at the upstream, blocking at the mid-stream and waves in the downstream. The instantaneous velocity data were collected using 3D Micro-acoustic Doppler velocimeter (ADV) along the flume centerline. This study addresses the changes in the mean flows, Reynolds stresses, eddy viscosity, turbulence kinetic energy fluxes and associated contributions of burst-sweep cycles to the total Reynolds shear stress due to addition of surface waves against a current. The velocity power spectral analysis shows the energy distribution over the whole profile from upstream to downstream. The quadrant analysis is also used to highlight the turbulent event evolutions along the flow; and shows that at the waveblocking and wave dominated regions, the contributions from ejection and sweep to the total shear stress are dominant. The changes in turbulence key parameters due to waveblocking may affect the sediment transport in coastal region △ Less

Submitted 2 April, 2018; originally announced April 2018.

Comments: Published in Applied Ocean Research 75 (2018) 15-36

Analogue White Hole Horizon and its Impact on Sediment Transport

Authors: Debasmita Chatterjee, Praloy Das, Subir Ghosh, B. S. Mazumder

Abstract: Motivated by the ideas of analogue gravity, we have performed experiments in a flume where an analogue White Hole horizon is generated, in the form of a wave blocking region, by suitably tuned uniform fluid (water) flow and counter-propagating shallow water waves. We corroborate earlier experimental observations by finding a critical wave frequency for a particular discharge above which the waves… ▽ More Motivated by the ideas of analogue gravity, we have performed experiments in a flume where an analogue White Hole horizon is generated, in the form of a wave blocking region, by suitably tuned uniform fluid (water) flow and counter-propagating shallow water waves. We corroborate earlier experimental observations by finding a critical wave frequency for a particular discharge above which the waves are effectively blocked beyond the horizon. An obstacle, in the form of a bottom wave, is introduced to generate a sharp blocking zone. All previous researchers used this obstacle. A novel part of our experiment is where we do not introduce the obstacle and find that wave blocking still takes place, albeit in a more diffused zone. Lastly we replace the fixed bottom wave obstacle by a movable sand bed to study the sediment transport and the impact of the horizon or wave blocking phenomenon on the sediment profile. We find signatures of the wave blocking zone in the ripple pattern. △ Less

Submitted 26 May, 2015; originally announced May 2015.

Comments: 19 pages, 10 figures

Interface study of FeMgOFe magnetic tunnel junctions using 3D Atom Probe

Authors: B. Mazumder, M. Gruber, A. Vella, F. Vurpillot, B. Deconihout

Abstract: A detailed interface study was conducted on a Fe/MgO/Fe system using laser assisted 3D atom probe. It exhibits an additional oxide formation at the second interface of the multilayer structure independent of laser wavelength, laser fluence and the thickness of the tunnel barrier. We have shown with the help of simulation that this phenomena is caused by the field evaporation of two layers having t… ▽ More A detailed interface study was conducted on a Fe/MgO/Fe system using laser assisted 3D atom probe. It exhibits an additional oxide formation at the second interface of the multilayer structure independent of laser wavelength, laser fluence and the thickness of the tunnel barrier. We have shown with the help of simulation that this phenomena is caused by the field evaporation of two layers having two different evaporation △ Less

Submitted 25 May, 2011; originally announced May 2011.