Showing 1–2 of 2 results for author: Marques, C A
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High Dynamic Range Scanning Tunneling Microscopy
Authors:
Ajla Karić,
Carolina A Marques,
Fabian Donat Natterer
Abstract:
We increase the dynamical range of a scanning tunneling microscope (STM) by actively subtracting dominant current-harmonics generated by nonlinearities in the current-voltage characteristics that could saturate the current preamplifier at low junction impedances or high gains. The strict phase relationship between a cosinusoidal excitation voltage and the current-harmonics allows excellent cancell…
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We increase the dynamical range of a scanning tunneling microscope (STM) by actively subtracting dominant current-harmonics generated by nonlinearities in the current-voltage characteristics that could saturate the current preamplifier at low junction impedances or high gains. The strict phase relationship between a cosinusoidal excitation voltage and the current-harmonics allows excellent cancellation using the displacement-current of a driven compensating capacitor placed at the input of the preamplifier. Removal of DC currents has no effect on, and removal of the first harmonic only leads to a rigid shift in conductivity that can be numerically reversed by adding the known removal current. Our method requires no permanent change of the hardware but only two phase synchronized voltage sources and a multi-frequency lock-in amplifier to enable high dynamic range spectroscopy and imaging.
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Submitted 2 May, 2024;
originally announced May 2024.
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Resistive switching in MoSe$_{2}$/BaTiO$_{3}$ hybrid structures
Authors:
J. P. B. Silva,
C. Almeida Marques,
J. Agostinho Moreira,
O. Conde
Abstract:
Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO$_{3}$ (BTO) and few-layers MoSe$_{2}$ are combined in one single structure. The C-V loops reveal the ferroelectric nature of both Al/Si/SiO$_{x}$/BTO/Au and Al/Si/SiO$_{x}$/MoSe$_{2}$/BTO/Au structures and the high quality of the SiO$_{x}$/MoSe$_{2}$ interface in the Al/Si/SiOx/MoSe$_{2}$/Au structure. Al/Si/Si…
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Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO$_{3}$ (BTO) and few-layers MoSe$_{2}$ are combined in one single structure. The C-V loops reveal the ferroelectric nature of both Al/Si/SiO$_{x}$/BTO/Au and Al/Si/SiO$_{x}$/MoSe$_{2}$/BTO/Au structures and the high quality of the SiO$_{x}$/MoSe$_{2}$ interface in the Al/Si/SiOx/MoSe$_{2}$/Au structure. Al/Si/SiO$_{x}$/MoSe$_{2}$/BTO/Au hybrid structures show the electroforming free resistive switching that is explained on the basis of the modulation of the potential distribution at the MoSe$_{2}$/BTO interface via ferroelectric polarization flip**. This structure shows promising resistive switching characteristics with switching ratio of $\approx{}$10$^{2}$ and a stable memory window, which are highly required for memory applications.
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Submitted 12 May, 2017;
originally announced May 2017.
