Showing 1–9 of 9 results for author: Marinella, M

Nanoscale imaging of He-ion irradiation effects on amorphous TaO$_x$ toward electroforming-free neuromorphic functions

Authors: Olha Popova, Steven J. Randolph, Sabine M. Neumayer, Liangbo Liang, Benjamin Lawrie, Olga S. Ovchinnikova, Robert J. Bondi, Matthew J. Marinella, Bobby G. Sumpter, Petro Maksymovych

Abstract: Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium nature. Here, we demonstrate new experimental approaches that can probe resistive switching phenomena, utilizing amorphous TaO$_x$ as a model material system. Spec… ▽ More Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium nature. Here, we demonstrate new experimental approaches that can probe resistive switching phenomena, utilizing amorphous TaO$_x$ as a model material system. Specifically, we apply Scanning Microwave Impedance Microscopy (sMIM) and cathodoluminescence (CL) microscopy as direct probes of conductance and electronic structure, respectively. These methods provide direct evidence of the electronic state of TaO$_x$ despite its amorphous nature. For example CL identifies characteristic impurity levels in TaO$_x$, in agreement with first principles calculations. We applied these methods to investigate He-ion-beam irradiation as a path to activate conductivity of materials and enable electroforming-free control over resistive switching. However, we find that even though He-ions begin to modify the nature of bonds even at the lowest doses, the films conductive properties exhibit remarkable stability with large displacement damage and they are driven to metallic states only at the limit of structural decomposition. Finally, we show that electroforming in a nanoscale junction can be carried out with a dissipated power of < 20 nW, a much smaller value compared to earlier studies and one that minimizes irreversible structural modifications of the films. The multimodal approach described here provides a new framework toward the theory/experiment guided design and optimization of electroresistive materials. △ Less

Submitted 20 July, 2023; originally announced July 2023.

Tunable intervalence charge transfer in ruthenium Prussian blue analogue enables stable and efficient biocompatible artificial synapses

Authors: Donald A. Robinson, Michael E. Foster, Christopher H. Bennett, Austin Bhandarkar, Elizabeth R. Webster, Aleyna Celebi, Nisa Celebi, Elliot J. Fuller, Vitalie Stavila, Catalin D. Spataru, David S. Ashby, Matthew J. Marinella, Raga Krishnakumar, Mark D. Allendorf, A. Alec Talin

Abstract: Emerging concepts for neuromorphic computing, bioelectronics, and brain-computer interfacing inspire new research avenues aimed at understanding the relationship between oxidation state and conductivity in unexplored materials. Here, we present ruthenium Prussian blue analogue (RuPBA), a mixed valence coordination compound with an open framework structure and ability to conduct both ionic and elec… ▽ More Emerging concepts for neuromorphic computing, bioelectronics, and brain-computer interfacing inspire new research avenues aimed at understanding the relationship between oxidation state and conductivity in unexplored materials. Here, we present ruthenium Prussian blue analogue (RuPBA), a mixed valence coordination compound with an open framework structure and ability to conduct both ionic and electronic charge, for flexible artificial synapses that reversibly switch conductance by more than four orders of magnitude based on electrochemically tunable oxidation state. Retention of programmed states is improved by nearly two orders of magnitude compared to the extensively studied organic polymers, thus reducing the frequency, complexity and energy costs associated with error correction schemes. We demonstrate dopamine detection using RuPBA synapses and biocompatibility with neuronal cells, evoking prospective application for brain-computer interfacing. By application of electron transfer theory to in-situ spectroscopic probing of intervalence charge transfer, we elucidate a switching mechanism whereby the degree of mixed valency between N-coordinated Ru sites controls the carrier concentration and mobility, as supported by DFT. △ Less

Submitted 15 July, 2022; originally announced July 2022.

Controllable reset behavior in domain wall-magnetic tunnel junction artificial neurons for task-adaptable computation

Authors: Samuel Liu, Christopher H. Bennett, Joseph S. Friedman, Matthew J. Marinella, David Paydarfar, Jean Anne C. Incorvia

Abstract: Neuromorphic computing with spintronic devices has been of interest due to the limitations of CMOS-driven von Neumann computing. Domain wall-magnetic tunnel junction (DW-MTJ) devices have been shown to be able to intrinsically capture biological neuron behavior. Edgy-relaxed behavior, where a frequently firing neuron experiences a lower action potential threshold, may provide additional artificial… ▽ More Neuromorphic computing with spintronic devices has been of interest due to the limitations of CMOS-driven von Neumann computing. Domain wall-magnetic tunnel junction (DW-MTJ) devices have been shown to be able to intrinsically capture biological neuron behavior. Edgy-relaxed behavior, where a frequently firing neuron experiences a lower action potential threshold, may provide additional artificial neuronal functionality when executing repeated tasks. In this study, we demonstrate that this behavior can be implemented in DW-MTJ artificial neurons via three alternative mechanisms: shape anisotropy, magnetic field, and current-driven soft reset. Using micromagnetics and analytical device modeling to classify the Optdigits handwritten digit dataset, we show that edgy-relaxed behavior improves both classification accuracy and classification rate for ordered datasets while sacrificing little to no accuracy for a randomized dataset. This work establishes methods by which artificial spintronic neurons can be flexibly adapted to datasets. △ Less

Submitted 8 January, 2021; originally announced January 2021.

Comments: 5 pages, 5 figures

Domain Wall Leaky Integrate-and-Fire Neurons with Shape-Based Configurable Activation Functions

Authors: Wesley H. Brigner, Naimul Hassan, Xuan Hu, Christopher H. Bennett, Felipe Garcia-Sanchez, Can Cui, Alvaro Velasquez, Matthew J. Marinella, Jean Anne C. Incorvia, Joseph S. Friedman

Abstract: Complementary metal oxide semiconductor (CMOS) devices display volatile characteristics, and are not well suited for analog applications such as neuromorphic computing. Spintronic devices, on the other hand, exhibit both non-volatile and analog features, which are well-suited to neuromorphic computing. Consequently, these novel devices are at the forefront of beyond-CMOS artificial intelligence ap… ▽ More Complementary metal oxide semiconductor (CMOS) devices display volatile characteristics, and are not well suited for analog applications such as neuromorphic computing. Spintronic devices, on the other hand, exhibit both non-volatile and analog features, which are well-suited to neuromorphic computing. Consequently, these novel devices are at the forefront of beyond-CMOS artificial intelligence applications. However, a large quantity of these artificial neuromorphic devices still require the use of CMOS, which decreases the efficiency of the system. To resolve this, we have previously proposed a number of artificial neurons and synapses that do not require CMOS for operation. Although these devices are a significant improvement over previous renditions, their ability to enable neural network learning and recognition is limited by their intrinsic activation functions. This work proposes modifications to these spintronic neurons that enable configuration of the activation functions through control of the shape of a magnetic domain wall track. Linear and sigmoidal activation functions are demonstrated in this work, which can be extended through a similar approach to enable a wide variety of activation functions. △ Less

Submitted 11 November, 2020; originally announced November 2020.

Unsupervised Competitive Hardware Learning Rule for Spintronic Clustering Architecture

Authors: Alvaro Velasquez, Christopher H. Bennett, Naimul Hassan, Wesley H. Brigner, Otitoaleke G. Akinola, Jean Anne C. Incorvia, Matthew J. Marinella, Joseph S. Friedman

Abstract: We propose a hardware learning rule for unsupervised clustering within a novel spintronic computing architecture. The proposed approach leverages the three-terminal structure of domain-wall magnetic tunnel junction devices to establish a feedback loop that serves to train such devices when they are used as synapses in a neuromorphic computing architecture. We propose a hardware learning rule for unsupervised clustering within a novel spintronic computing architecture. The proposed approach leverages the three-terminal structure of domain-wall magnetic tunnel junction devices to establish a feedback loop that serves to train such devices when they are used as synapses in a neuromorphic computing architecture. △ Less

Submitted 24 March, 2020; originally announced March 2020.

CMOS-Free Multilayer Perceptron Enabled by Four-Terminal MTJ Device

Authors: Wesley H. Brigner, Naimul Hassan, Xuan Hu, Christopher H. Bennett, Felipe Garcia-Sanchez, Matthew J. Marinella, Jean Anne C. Incorvia, Joseph S. Friedman

Abstract: Neuromorphic computing promises revolutionary improvements over conventional systems for applications that process unstructured information. To fully realize this potential, neuromorphic systems should exploit the biomimetic behavior of emerging nanodevices. In particular, exceptional opportunities are provided by the non-volatility and analog capabilities of spintronic devices. While spintronic d… ▽ More Neuromorphic computing promises revolutionary improvements over conventional systems for applications that process unstructured information. To fully realize this potential, neuromorphic systems should exploit the biomimetic behavior of emerging nanodevices. In particular, exceptional opportunities are provided by the non-volatility and analog capabilities of spintronic devices. While spintronic devices have previously been proposed that emulate neurons and synapses, complementary metal-oxide-semiconductor (CMOS) devices are required to implement multilayer spintronic perceptron crossbars. This work therefore proposes a new spintronic neuron that enables purely spintronic multilayer perceptrons, eliminating the need for CMOS circuitry and simplifying fabrication. △ Less

Submitted 3 February, 2020; originally announced February 2020.

Maximized Lateral Inhibition in Paired Magnetic Domain Wall Racetracks for Neuromorphic Computing

Authors: C. Cui, O. G. Akinola, N. Hassan, C. H. Bennett, M. J. Marinella, J. S. Friedman, J. A. C. Incorvia

Abstract: Lateral inhibition is an important functionality in neuromorphic computing, modeled after the biological neuron behavior that a firing neuron deactivates its neighbors belonging to the same layer and prevents them from firing. In most neuromorphic hardware platforms lateral inhibition is implemented by external circuitry, thereby decreasing the energy efficiency and increasing the area overhead of… ▽ More Lateral inhibition is an important functionality in neuromorphic computing, modeled after the biological neuron behavior that a firing neuron deactivates its neighbors belonging to the same layer and prevents them from firing. In most neuromorphic hardware platforms lateral inhibition is implemented by external circuitry, thereby decreasing the energy efficiency and increasing the area overhead of such systems. Recently, the domain wall -- magnetic tunnel junction (DW-MTJ) artificial neuron is demonstrated in modeling to be inherently inhibitory. Without peripheral circuitry, lateral inhibition in DW-MTJ neurons results from magnetostatic interaction between neighboring neuron cells. However, the lateral inhibition mechanism in DW-MTJ neurons has not been studied thoroughly, leading to weak inhibition only in very closely-spaced devices. This work approaches these problems by modeling current- and field- driven DW motion in a pair of adjacent DW-MTJ neurons. We maximize the magnitude of lateral inhibition by tuning the magnetic interaction between the neurons. The results are explained by current-driven DW velocity characteristics in response to external magnetic field and quantified by an analytical model. Finally, the dependence of lateral inhibition strength on device parameters is investigated. This provides a guideline for the optimization of lateral inhibition implementation in DW-MTJ neurons. With strong lateral inhibition achieved, a path towards competitive learning algorithms such as the winner-take-all are made possible on such neuromorphic devices. △ Less

Submitted 10 December, 2019; originally announced December 2019.

Comments: 8 pages, 5 figures

Shape-based Magnetic Domain Wall Drift for an Artificial Spintronic Leaky Integrate-and-Fire Neuron

Authors: Wesley H. Brigner, Naimul Hassan, Lucian Jiang-Wei, Xuan Hu, Diptish Saha, Christopher H. Bennett, Matthew J. Marinella, Jean Anne C. Incorvia, Felipe Garcia-Sanchez, Joseph S. Friedman

Abstract: Spintronic devices based on domain wall (DW) motion through ferromagnetic nanowire tracks have received great interest as components of neuromorphic information processing systems. Previous proposals for spintronic artificial neurons required external stimuli to perform the leaking functionality, one of the three fundamental functions of a leaky integrate-and-fire (LIF) neuron. The use of this ext… ▽ More Spintronic devices based on domain wall (DW) motion through ferromagnetic nanowire tracks have received great interest as components of neuromorphic information processing systems. Previous proposals for spintronic artificial neurons required external stimuli to perform the leaking functionality, one of the three fundamental functions of a leaky integrate-and-fire (LIF) neuron. The use of this external magnetic field or electrical current stimulus results in either a decrease in energy efficiency or an increase in fabrication complexity. In this work, we modify the shape of previously demonstrated three-terminal magnetic tunnel junction neurons to perform the leaking operation without any external stimuli. The trapezoidal structure causes shape-based DW drift, thus intrinsically providing the leaking functionality with no hardware cost. This LIF neuron therefore promises to advance the development of spintronic neural network crossbar arrays. △ Less

Submitted 14 May, 2019; originally announced May 2019.

Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations

Authors: J. L. Pacheco, D. L. Perry, D. R. Hughart, M. Marinella, E. Bielejec

Abstract: We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a C… ▽ More We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer level fabrication of fully formed and operational memristors. △ Less

Submitted 25 October, 2017; originally announced October 2017.