Showing 1–17 of 17 results for author: Marie, X

Kapitza-resistance-like exciton dynamics in atomically flat MoSe$_{2}$-WSe$_{2}$ lateral heterojunction

Authors: Hassan Lamsaadi, Dorian Beret, Ioannis Paradisanos, Pierre Renucci, Delphine Lagarde, Xavier Marie, Bernhard Urbaszek, Ziyang Gan, Antony George, Kenji Watanabe, Takashi Taniguchi, Andrey Turchanin, Laurent Lombez, Nicolas Combe, Vincent Paillard, Jean-Marie Poumirol

Abstract: Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challe… ▽ More Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe$_{2}$-WSe$_{2}$) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices. △ Less

Submitted 23 June, 2023; originally announced June 2023.

Journal ref: Nature Communications volume 14, Article number: 5881 (2023)

Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors

Authors: Ana Estrada-Real, Ioannis Paradisanos, Peter R. Wiecha, Jean-Marie Poumirol, Aurelien Cuche, Gonzague Agez, Delphine Lagarde, Xavier Marie, Vincent Larrey, Jonas Müller, Guilhem Larrieu, Vincent Paillard, Bernhard Urbaszek

Abstract: Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling betw… ▽ More Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling between a MoSe2 monolayer and the near-field of dielectric nanoresonators. Through a comparison of dark-field (DF) scattering spectroscopy and photoluminescence excitation experiments (PLE), we show that the MoSe2 absorption can be enhanced via the near-field of a nanoresonator. We demonstrate spectral tuning of the absorption via the geometry of individual Mie resonators. We show that we indeed access the optical near-field of the nanoresonators, by measuring a spectral shift between the typical near-field resonances in PLE compared to the far-field resonances in DF scattering. Our results prove that using MoSe2 as an active probe allows accessing the optical near-field above photonic nanostructures, without the requirement of highly complex near-field microscopy equipment. △ Less

Submitted 25 October, 2022; originally announced October 2022.

Comments: Main paper and supplement

Journal ref: Communication Physics 6, 102 (2023)

Machine learning assisted GaAsN circular polarimeter

Authors: A. Aguirre-Perez, R. S. Joshya, H. Carrère, X. Marie, T. Amand, A. Balocchi, A. Kunold

Abstract: We demonstrate the application of a two stage machine learning algorithm that enables to correlate the electrical signals from a GaAs$_x$N$_{1-x}$ circular polarimeter with the intensity, degree of circular polarization and handedness of an incident light beam. Specifically, we employ a multimodal logistic regression to discriminate the handedness of light and a 6-layer neural network to establish… ▽ More We demonstrate the application of a two stage machine learning algorithm that enables to correlate the electrical signals from a GaAs$_x$N$_{1-x}$ circular polarimeter with the intensity, degree of circular polarization and handedness of an incident light beam. Specifically, we employ a multimodal logistic regression to discriminate the handedness of light and a 6-layer neural network to establish the relationship between the input voltages, the intensity and degree of circular polarization. We have developed a particular neural network training strategy that substantially improves the accuracy of the device. The algorithm was trained and tested on theoretically generated photoconductivity and on photoluminescence experimental results. Even for a small training experimental dataset (70 instances), it is shown that the proposed algorithm correctly predicts linear, right and left circularly polarized light misclassifying less than $1.5\%$ of the cases and attains an accuracy larger than $97\%$ in the vast majority of the predictions ($92\%$) for intensity and degree of circular polarization. These numbers are significantly improved for the larger theoretically generated datasets (4851 instances). The algorithm is versatile enough that it can be easily adjusted to other device configurations where a map needs to be established between the input parameters and the device response. Training and testing data files as well as the algorithm are provided as supplementary material. △ Less

Submitted 15 October, 2021; originally announced October 2021.

Comments: 20 pages, 13 figures

Chiral photodetector based on GaAsN

Authors: R. S. Joshya, H. Carrère, V. G. Ibarra-Sierra, J. C. Sandoval-Santana, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Kunold, A. Balocchi

Abstract: The detection of light helicity is key to several research and industrial applications from drugs production to optical communications. However, the direct measurement of the light helicity is inherently impossible with conventional photodetectors based on III-V or IV-VI semiconductors, being naturally non-chiral. The prior polarization analysis of the light by a series of often moving optical ele… ▽ More The detection of light helicity is key to several research and industrial applications from drugs production to optical communications. However, the direct measurement of the light helicity is inherently impossible with conventional photodetectors based on III-V or IV-VI semiconductors, being naturally non-chiral. The prior polarization analysis of the light by a series of often moving optical elements is necessary before light is sent to the detector. A method is here presented to effectively give to the conventional dilute nitride GaAs-based semiconductor epilayer a chiral photoconductivity in paramagnetic-defect-engineered samples. The detection scheme relies on the giant spin-dependent recombination of conduction electrons and the accompanying spin polarization of the engineered defects to control the conduction band population via the electrons' spin polarization. As the conduction electron spin polarization is, in turn, intimately linked to the excitation light polarization, the light polarization state can be determined by a simple conductivity measurement. This effectively gives the GaAsN epilayer a chiral photoconductivity capable of discriminating the handedness of an incident excitation light in addition to its intensity. This approach, removing the need of any optical elements in front of a non-chiral detector, could offer easier integration and miniaturisation. This new chiral photodetector could potentially operate in a spectral range from the visible to the infra-red using (In)(Al)GaAsN alloys or ion-implanted nitrogen-free III-V compounds. △ Less

Submitted 22 March, 2021; v1 submitted 26 February, 2021; originally announced February 2021.

Comments: 7 pages, 7 figures

Magneto-optical determination of the carrier lifetime in coherent Ge(1-x)Sn(x)/Ge heterostructures

Authors: Elisa Vitiello, Simone Rossi, Christopher A. Broderick, Giorgio Gravina, Andrea Balocchi, Xavier Marie, Eoin P. O'Reilly, Maksym Myronov, Fabio Pezzoli

Abstract: We present a magneto-optical study of the carrier dynamics in compressively strained Ge(1-x)Sn(x) films having Sn compositions up to 10% epitaxially grown on blanket Ge on Si (001) virtual substrates. We leverage the Hanle effect under steady-state excitation to study the spin-dependent optical transitions in presence of an external magnetic field. This allowed us to obtain direct access to the dy… ▽ More We present a magneto-optical study of the carrier dynamics in compressively strained Ge(1-x)Sn(x) films having Sn compositions up to 10% epitaxially grown on blanket Ge on Si (001) virtual substrates. We leverage the Hanle effect under steady-state excitation to study the spin-dependent optical transitions in presence of an external magnetic field. This allowed us to obtain direct access to the dynamics of the optically-induced carrier population. Our approach singled out that at cryogenic temperatures the effective lifetime of the photogenerated carriers in coherent Ge(1-x)Sn(x) occurs in the sub-ns time scale. Supported by a model estimate of the radiative lifetime, our measurements indicate that carrier recombination is dominated by non-radiative processes. Our results thus provide central information to advance the fundamental understanding of carrier kinetics in this novel direct-gap group-IV material system. Such knowledge can be a step** stone in the quest for the implementation of Ge(1-x)Sn(x)-based functional devices. △ Less

Submitted 2 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Applied 14, 064068 (2020)

Electrical Detection of Light Helicity using a Quantum Dots based Hybrid Device at Zero Magnetic Field

Authors: Fabian Cadiz, Delphine Lagarde, Bingshan Tao, Julien Frougier, Bo Xu, Henri Jaffrès, Zhanguo Wang, Xiufeng Han, Jean Marie George, Hélène Carrere, Andrea Balocchi, Thierry Amand, Xavier Marie, Bernhard Urbaszek, Yuan Lu, Pierre Renucci

Abstract: Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron spin relaxation time expected in these nano-objects. In these experiments, no external magnetic field is required thanks to the use of an ultrathin magnetic CoF… ▽ More Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron spin relaxation time expected in these nano-objects. In these experiments, no external magnetic field is required thanks to the use of an ultrathin magnetic CoFeB/MgO electrode, presenting perpendicular magnetic anisotropy (PMA). We observe a clear asymmetry of the photocurrent measured under respective right and left polarized light that follows the hysteresis of the magnetic layer. The amplitude of this asymmetry at zero magnetic field decreases with increasing temperatures and can be controlled with the bias. Polarization-resolved photoluminescence is detected in parallel while the device is operated as a photodetector. This demonstrates the multifunctional capabilities of the device and gives valuable insights into the spin relaxation of the electrons in the quantum dots. △ Less

Submitted 23 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Materials 4, 124603 (2020)

Guide to optical spectroscopy of layered semiconductors

Authors: Shivangi Shree, Ioannis Paradisanos, Xavier Marie, Cedric Robert, Bernhard Urbaszek

Abstract: In this technical review we give an introduction to optical spectroscopy for layered materials as a powerful, non-invasive tool to access details of the electronic band structure and crystal quality. Potential applications in photonics and optoelectronics are based on our understanding of the light-matter interaction on an atomic monolayer scale. Here atomically thin transition metal dichalcogenid… ▽ More In this technical review we give an introduction to optical spectroscopy for layered materials as a powerful, non-invasive tool to access details of the electronic band structure and crystal quality. Potential applications in photonics and optoelectronics are based on our understanding of the light-matter interaction on an atomic monolayer scale. Here atomically thin transition metal dichalcogenides, such as MoS2 and WSe2, are model systems for layered semiconductors with a bandgap in the visible region of the optical spectrum. They can be assembled to form heterostructures and combine the unique properties of the constituent monolayers. We review the working principles of micro-photoluminescence spectroscopy and optical absorption experiments. We discuss the physical origin of the main absorption and emission features in the optical spectra and how they can be tuned. We explain key-aspects of practical set-ups for performing experiments in different conditions such as variable temperatures or in applied magnetic fields and how parameters such as detection spot size and excitation laser wavelength impact the optical spectra. We describe the important influence of the direct sample environment, such as substrates and encapsulation layers, on the emission and absorption mechanisms. A survey of optical techniques that probe the coupling between layers and analyse carrier polarisation dynamics for spin- and valleytronics is provided. △ Less

Submitted 30 June, 2020; originally announced June 2020.

Comments: 12 pages, 4 Figures, initial version

Journal ref: Nature Reviews Physics 2020

Mo Thio and Oxo-Thio Molecular Complexes Film as Self-Healing Catalyst for Photocatalytic Hydrogen Evolution on 2D Materials

Authors: Juliana Barros Barbosa, Pierre Louis Taberna, Valerie Bourdon, Iann C. Gerber, Romuald Poteau, Andrea Balocchi, Xavier Marie, Jerome Esvan, Pascal Puech, Antoine Barnabé, Lucianna Da Gama Fernandes Vieira, Ionut-Tudor Moraru, Jean Yves Chane-Ching

Abstract: 2D semiconducting nanosheets of Transition Metal Dichalcogenides are attractive materials for solar energy conversion because of their unique absorption properties. Here, we propose Mo thio- and oxo-thio-complexes anchored on 2D p-WSe2 nanosheets for efficient water splitting under visible light irradiation with photocurrent density up to 2.0 mA cm-2 at -0.2 V/NHE. Besides develo** high electro-… ▽ More 2D semiconducting nanosheets of Transition Metal Dichalcogenides are attractive materials for solar energy conversion because of their unique absorption properties. Here, we propose Mo thio- and oxo-thio-complexes anchored on 2D p-WSe2 nanosheets for efficient water splitting under visible light irradiation with photocurrent density up to 2.0 mA cm-2 at -0.2 V/NHE. Besides develo** high electro-catalytic activity, the Mo complexe films were shown to display ability to heal surface defects. We propose that the observed healing of surface defects arises from the strong adsorption on point defects of the 2D WSe2 substrate of Mo complexes such as (MoS4)2-, (MoOS3)2-, (Mo2S6O2)2- as shown from DFT calculations. In addition to display catalytic and healing effects, the thio-, oxo-thio Mo complexes films were shown to enhance charge carrier separation and migration for the hydrogen evolution reaction, thus representing an example of multicomponent passivation layer exhibiting multiple properties. △ Less

Submitted 13 March, 2020; originally announced March 2020.

Electron-nucleus spin correlation conservation of the spin dependent recombination in Ga$^{2+}$ centers

Authors: J. C. Sandoval-Santana, V. G. Ibarra-Sierra, H. Carrère, L. A. Bakaleinikov, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Balocchi, A. Kunold

Abstract: Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature. The mechanism behind the spin selective capture of electrons in Ga$^{2+}$ paramagnetic centers is revisited in this paper to address inconsistencies common to m… ▽ More Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature. The mechanism behind the spin selective capture of electrons in Ga$^{2+}$ paramagnetic centers is revisited in this paper to address inconsistencies common to most previously presented models. Primarily, these errors manifest themselves as major disagreements with the experimental observations of two key characteristics of this phenomenon: the effective Overhauser-like magnetic field and the width of the photoluminescence Lorentzian-like curves as a function of the illumination power. These features are not only essential to understand the spin dependent recombination in GaAsN, but are also key to the design of novel spintronic devices. Here we demonstrate that the particular structure of the electron capture expressions introduces spurious electron-nucleus correlations that artificially alter the balance between the hyperfine and the Zeeman contributions. This imbalance strongly distorts the effective magnetic field and width characteristics. In this work we propose an alternative recombination mechanism that preserves the electron-nucleus correlations and, at the same time, keeps the essential properties of the spin selective capture of electrons. This mechanism yields a significant improvement to the agreement between experimental and theoretical results. In particular, our model gives results in very good accord with the experimental effective Overhauser-like magnetic field and width data, and with the degree of circular polarization under oblique magnetic fields. △ Less

Submitted 8 October, 2019; originally announced October 2019.

Comments: 13 pages, 6 figures

Journal ref: Phys. Rev. B 101, 075201 (2020)

Filtering the photoluminescence spectra of atomically thin semiconductors with graphene

Authors: Etienne Lorchat, Luis E. Parra López, Cédric Robert, Delphine Lagarde, Guillaume Froehlicher, Takashi Taniguchi, Kenji Watanabe, Xavier Marie, Stéphane Berciaud

Abstract: Atomically thin semiconductors made from transition metal dichalcogenides (TMDs) are model systems for investigations of strong light-matter interactions and applications in nanophotonics, opto-electronics and valley-tronics. However, the photoluminescence spectra of TMD monolayers display a large number of features that are particularly challenging to decipher. On a practical level, monochromatic… ▽ More Atomically thin semiconductors made from transition metal dichalcogenides (TMDs) are model systems for investigations of strong light-matter interactions and applications in nanophotonics, opto-electronics and valley-tronics. However, the photoluminescence spectra of TMD monolayers display a large number of features that are particularly challenging to decipher. On a practical level, monochromatic TMD-based emitters would be beneficial for low-dimensional devices but this challenge is yet to be resolved. Here, we show that graphene, directly stacked onto TMD monolayers enables single and narrow-line photoluminescence arising solely from TMD neutral excitons. This filtering effect stems from complete neutralization of the TMD by graphene combined with selective non-radiative transfer of long-lived excitonic species to graphene. Our approach is applied to four tungsten and molybdenum-based TMDs and establishes TMD/graphene heterostructures as a unique set of opto-electronic building blocks, suitable for electroluminescent systems emitting visible and near-infrared photons at near THz rate with linewidths approaching the lifetime limit. △ Less

Submitted 5 November, 2020; v1 submitted 28 August, 2019; originally announced August 2019.

Comments: Main manuscript with 5 figures plus supplementary information file (including 9 supplementary sections and 14 supplementary figures)

Journal ref: Nature Nanotechnology 15, 283(2020)

Optomechanical measurement of thermal transport in two-dimensional MoSe2 lattices

Authors: Nicolas Morell, Slaven Tepsic, Antoine Reserbat-Plantey, Andrea Cepellotti, Marco Manca, Itai Epstein, Andreas Isacsson, Xavier Marie, Francesco Mauri, Adrian Bachtold

Abstract: Nanomechanical resonators have emerged as sensors with exceptional sensitivities. These sensing capabilities open new possibilities in the studies of the thermodynamic properties in condensed matter. Here, we use mechanical sensing as a novel approach to measure the thermal properties of low-dimensional materials. We measure the temperature dependence of both the thermal conductivity and the speci… ▽ More Nanomechanical resonators have emerged as sensors with exceptional sensitivities. These sensing capabilities open new possibilities in the studies of the thermodynamic properties in condensed matter. Here, we use mechanical sensing as a novel approach to measure the thermal properties of low-dimensional materials. We measure the temperature dependence of both the thermal conductivity and the specific heat capacity of a transition metal dichalcogenide (TMD) monolayer down to cryogenic temperature, something that has not been achieved thus far with a single nanoscale object. These measurements show how heat is transported by phonons in two-dimensional systems. Both the thermal conductivity and the specific heat capacity measurements are consistent with predictions based on first-principles. △ Less

Submitted 2 May, 2019; originally announced May 2019.

Journal ref: Nano letters (2019)

Control of the Exciton Radiative Lifetime in van der Waals Heterostructures

Authors: H. H. Fang, B. Han, C. Robert, M. A. Semina, D. Lagarde, E. Courtade, T. Taniguchi, K. Watanabe, T. Amand, B. Urbaszek, M. M. Glazov, X. Marie

Abstract: Optical properties of atomically thin transition metal dichalcogenides are controlled by robust excitons characterized by a very large oscillator strength. Encapsulation of monolayers such as MoSe$_2$ in hexagonal boron nitride (hBN) yields narrow optical transitions approaching the homogenous exciton linewidth. We demonstrate that the exciton radiative rate in these van der Waals heterostructures… ▽ More Optical properties of atomically thin transition metal dichalcogenides are controlled by robust excitons characterized by a very large oscillator strength. Encapsulation of monolayers such as MoSe$_2$ in hexagonal boron nitride (hBN) yields narrow optical transitions approaching the homogenous exciton linewidth. We demonstrate that the exciton radiative rate in these van der Waals heterostructures can be tailored by a simple change of the hBN encapsulation layer thickness as a consequence of the Purcell effect. The time-resolved photoluminescence measurements together with cw reflectivity and photoluminescence experiments show that the neutral exciton spontaneous emission time can be tuned by one order of magnitude depending on the thickness of the surrounding hBN layers. The inhibition of the radiative recombination can yield spontaneous emission time up to $10$~ps. These results are in very good agreement with the calculated recombination rate in the weak exciton-photon coupling regime. The analysis shows that we are also able to observe a sizeable enhancement of the exciton radiative decay rate. Understanding the role of these electrodynamical effects allow us to elucidate the complex dynamics of relaxation and recombination for both neutral and charged excitons. △ Less

Submitted 15 July, 2019; v1 submitted 2 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. Lett. 123, 067401 (2019)

Electronic structure of the Co(0001)/MoS2 interface, and its possible use for electrical spin injection in a single MoS2 layer

Authors: Thomas Garandel, Rémi Arras, Xavier Marie, Pierre Renucci, Lionel Calmels

Abstract: The ability to perform efficient electrical spin injection from ferromagnetic metals into two-dimensional semiconductor crystals based on transition metal dichalcogenide monolayers is a prerequisite for spintronic and valleytronic devices using these materials. Here, the hcp Co(0001)/MoS2 interface electronic structure is investigated by first-principles calculations based on the density functiona… ▽ More The ability to perform efficient electrical spin injection from ferromagnetic metals into two-dimensional semiconductor crystals based on transition metal dichalcogenide monolayers is a prerequisite for spintronic and valleytronic devices using these materials. Here, the hcp Co(0001)/MoS2 interface electronic structure is investigated by first-principles calculations based on the density functional theory. In the lowest energy configuration of the hybrid system after optimization of the atomic coordinates, we show that interface sulfur atoms are covalently bound to one, two or three cobalt atoms. A decrease of the Co atom spin magnetic moment is observed at the interface, together with a small magnetization of S atoms. Mo atoms also hold small magnetic moments which can take positive as well as negative values. The charge transfers due to covalent bonding between S and Co atoms at the interface have been calculated for majority and minority spin electrons and the connections between these interface charge transfers and the induced magnetic properties of the MoS2 layer are discussed. Band structure and density of states of the hybrid system are calculated for minority and majority spin electrons, taking into account spin-orbit coupling. We demonstrate that MoS2 bound to the Co contact becomes metallic due to hybridization between Co d and S p orbitals. For this metallic phase of MoS2, a spin polarization at the Fermi level of 16 % in absolute value is calculated, that could allow spin injection into the semiconducting MoS2 monolayer channel. Finally, the symmetry of the majority and minority spin electron wave functions at the Fermi level in the Co-bound metallic phase of MoS2 and the orientation of the border between the metallic and semiconducting phases of MoS2 are investigated, and their impact on spin injection into the MoS2 channel is discussed. △ Less

Submitted 28 March, 2018; originally announced March 2018.

Journal ref: Physical Review B : Condensed matter and materials physics, American Physical Society, 2017

Enabling valley selective exciton scattering in monolayer WSe$_2$ through upconversion

Authors: M. Manca, M. M. Glazov, C. Robert, F. Cadiz, T. Taniguchi, K. Watanabe, E. Courtade, T. Amand, P. Renucci, X. Marie, G. Wang, B. Urbaszek

Abstract: Excitons, Coulomb bound electron-hole pairs, are composite bosons and their interactions in traditional semiconductors lead to condensation and light amplification. The much stronger Coulomb interaction in transition metal dichalcogenides such as WSe$_2$ monolayers combined with the presence of the valley degree of freedom is expected to provide new opportunities for controlling excitonic effects.… ▽ More Excitons, Coulomb bound electron-hole pairs, are composite bosons and their interactions in traditional semiconductors lead to condensation and light amplification. The much stronger Coulomb interaction in transition metal dichalcogenides such as WSe$_2$ monolayers combined with the presence of the valley degree of freedom is expected to provide new opportunities for controlling excitonic effects. But so far the bosonic character of exciton scattering processes remains largely unexplored in these two-dimensional (2D) materials. Here we show that scattering between B-excitons and A-excitons preferably happens within the same valley in momentum space. This leads to power dependent, negative polarization of the hot B-exciton emission. We use a selective upconversion technique for efficient generation of B-excitons in the presence of resonantly excited A-excitons at lower energy, we also observe the excited A-excitons state $2s$. Detuning of the continuous wave, low power laser excitation outside the A-exciton resonance (with a full width at half maximum of 4 meV) results in vanishing upconversion signal. △ Less

Submitted 20 January, 2017; originally announced January 2017.

Comments: main text: 8 pages, 4 figures; supplement: 4 pages, 5 figures

Journal ref: Nature Communications 8, 14927 (2017)

Ultra-low power threshold for laser induced changes in optical properties of 2D Molybdenum dichalcogenides

Authors: Fabian Cadiz, Cedric Robert, Gang Wang, Wilson Kong, Xi Fan, Mark Blei, Delphine Lagarde, Maxime Gay, Marco Manca, Takashi Taniguchi, Kenji Watanabe, Thierry Amand, Xavier Marie, Pierre Renucci, Sefaattin Tongay, Bernhard Urbaszek

Abstract: The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical… ▽ More The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical properties of 2D materials undergo irreversible changes. Most surprisingly these effects take place even at low steady state excitation, which is commonly thought to be non-intrusive. In low temperature photoluminescence (PL) we show for monolayer (ML) MoSe2 samples grown by different techniques that laser treatment increases significantly the trion (i.e. charged exciton) contribution to the emission compared to the neutral exciton emission. Comparison between samples exfoliated onto different substrates shows that laser induced do** is more efficient for ML MoSe2 on SiO2/Si compared to h-BN and gold. For ML MoS2 we show that exposure to laser radiation with an average power in the $μ$W/$μ$m$^2$ range does not just increase the trion-to-exciton PL emission ratio, but may result in the irreversible disappearance of the neutral exciton PL emission and a shift of the main PL peak to lower energy. △ Less

Submitted 30 June, 2016; originally announced June 2016.

Comments: 16 pages, 5 figures

Journal ref: 2D Materials 3 (2016) 045008 - Open Access

Controlling the polarization eigenstate of a quantum dot exciton with light

Authors: Thomas Belhadj, Claire-Marie Simon, Thierry Amand, Pierre Renucci, Olivier Krebs, Aristide Lemaitre, Paul Voisin, Xavier Marie, Bernhard Urbaszek

Abstract: We demonstrate optical control of the polarization eigenstates of a neutral quantum dot exciton without any external fields. By varying the excitation power of a circularly polarized laser in micro-photoluminescence experiments on individual InGaAs quantum dots we control the magnitude and direction of an effective internal magnetic field created via optical pum** of nuclear spins. The adjusta… ▽ More We demonstrate optical control of the polarization eigenstates of a neutral quantum dot exciton without any external fields. By varying the excitation power of a circularly polarized laser in micro-photoluminescence experiments on individual InGaAs quantum dots we control the magnitude and direction of an effective internal magnetic field created via optical pum** of nuclear spins. The adjustable nuclear magnetic field allows us to tune the linear and circular polarization degree of the neutral exciton emission. The quantum dot can thus act as a tunable light polarization converter. △ Less

Submitted 27 March, 2009; originally announced March 2009.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 103, 086601 (2009)

Optically monitored nuclear spin dynamics in individual GaAs quantum dots grown by droplet epitaxy

Authors: Thomas Belhadj, Takashi Kuroda, Claire-Marie Simon, Thierry Amand, Takaaki Mano, Kazuaki Sakoda, Nobuyuki Koguchi, Xavier Marie, Bernhard Urbaszek

Abstract: We report optical orientation experiments in individual, strain free GaAs quantum dots in AlGaAs grown by droplet epitaxy. Circularly polarized optical excitation yields strong circular polarization of the resulting photoluminescence at 4K. Optical injection of spin polarized electrons into a dot gives rise to dynamical nuclear polarization that considerably changes the exciton Zeeman splitting… ▽ More We report optical orientation experiments in individual, strain free GaAs quantum dots in AlGaAs grown by droplet epitaxy. Circularly polarized optical excitation yields strong circular polarization of the resulting photoluminescence at 4K. Optical injection of spin polarized electrons into a dot gives rise to dynamical nuclear polarization that considerably changes the exciton Zeeman splitting (Overhauser shift). We show that the created nuclear polarization is bistable and present a direct measurement of the build-up time of the nuclear polarization in a single GaAs dot in the order of one second. △ Less

Submitted 6 October, 2008; v1 submitted 30 June, 2008; originally announced June 2008.

Comments: 7 pages, 3 figures

Journal ref: Physical Review B 78, 205325 (2008)