Showing 1–22 of 22 results for author: Maiti, R

Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications

Authors: Abhijit Biswas, Rishi Maiti, Frank Lee, Cecilia Y. Chen, Tao Li, Anand B. Puthirath, Sathvik Ajay Iyengar, Chenxi Li, Xiang Zhang, Harikishan Kannan, Tia Gray, Md Abid Shahriar Rahman Saadi, Jacob Elkins, A. Glen Birdwell, Mahesh R. Neupane, Pankaj B. Shah, Dmitry A. Ruzmetov, Tony G. Ivanov, Robert Vajtai, Yuji Zhao, Alexander L. Gaeta, Manoj Tripathi, Alan Dalton, Pulickel M. Ajayan

Abstract: Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diff… ▽ More Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of functional properties and consequent device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process and demonstrated various functionalities for potential applications. Comprehensive chemical, spectroscopic and microscopic characterization confirms the growth of ordered nanosheet-like hexagonal BN. Functionally, nanosheets show hydrophobicity, high lubricity (low coefficient of friction), low refractive index within the visible to near-infrared wavelength range, and room temperature single-photon quantum emission. Our work unveils an important step that brings a plethora of applications potential for room temperature grown h-BN nanosheets as it can be feasible on any given substrate, thus creating a scenario for h-BN on demand at frugal thermal budget. △ Less

Submitted 12 October, 2023; v1 submitted 19 August, 2022; originally announced August 2022.

Comments: 27 pages, 4 figures, Authors version of the article

Journal ref: Nanoscale Horizons, 2023, 8, 641-651

Unzip** hBN with ultrashort mid-infrared pulses

Authors: Cecilia Y. Chen, Jared S. Ginsberg, Samuel L. Moore, M. Mehdi Jadidi, Rishi Maiti, Baichang Li, Sang Hoon Chae, Anjaly Rajendran, Gauri N. Patwardhan, Kenji Watanabe, Takashi Taniguchi, James Hone, D. N. Basov, Alexander L. Gaeta

Abstract: Manipulating the nanostructure of materials is critical for numerous applications in electronics, magnetics, and photonics. However, conventional methods such as lithography and laser-writing require cleanroom facilities or leave residue. Here, we describe a new approach to create atomically sharp line defects in hexagonal boron nitride (hBN) at room temperature by direct optical phonon excitation… ▽ More Manipulating the nanostructure of materials is critical for numerous applications in electronics, magnetics, and photonics. However, conventional methods such as lithography and laser-writing require cleanroom facilities or leave residue. Here, we describe a new approach to create atomically sharp line defects in hexagonal boron nitride (hBN) at room temperature by direct optical phonon excitation in the mid-infrared (mid-IR). We term this phenomenon "unzip**" to describe the rapid formation and growth of a <30-nm-wide crack from a point within the laser-driven region. The formation of these features is attributed to large atomic displacements and high local bond strain from driving the crystal at a natural resonance. This process is distinguished by (i) occurring only under resonant phonon excitation, (ii) producing highly sub-wavelength features, and (iii) sensitivity to crystal orientation and pump laser polarization. Its cleanliness, directionality, and sharpness enable applications in in-situ flake cleaving and phonon-wave-coupling via free space optical excitation. △ Less

Submitted 24 May, 2022; originally announced May 2022.

Comments: 11 pages, 4 figures

Evolutionary Dynamics of Social Inequality and Coincidence of Gini and Kolkata indices under Unrestricted Competition

Authors: Suchismita Banerjee, Soumyajyoti Biswas, Bikas K. Chakrabarti, Sai Krishna Challagundla, Asim Ghosh, Suhaas Reddy Guntaka, Hanesh Koganti, Anvesh Reddy Kondapalli, Raju Maiti, Manipushpak Mitra, Dachepalli R. S. Ram

Abstract: Social inequalities are ubiquitous and here we show that the values of the Gini ($g$) and Kolkata ($k$) indices, two generic inequality indices, approach each other (starting from $g = 0$ and $k = 0.5$ for equality) as the competitions grow in various social institutions like markets, universities, elections, etc. It is further showed that these two indices become equal and stabilize at a value (a… ▽ More Social inequalities are ubiquitous and here we show that the values of the Gini ($g$) and Kolkata ($k$) indices, two generic inequality indices, approach each other (starting from $g = 0$ and $k = 0.5$ for equality) as the competitions grow in various social institutions like markets, universities, elections, etc. It is further showed that these two indices become equal and stabilize at a value (at $g = k \simeq 0.87$) under unrestricted competitions. We propose to view this coincidence of inequality indices as a generalized version of the (more than a) century old 80-20 law of Pareto. Furthermore, the coincidence of the inequality indices noted here is very similar to the ones seen before for self-organized critical (SOC) systems. The observations here, therefore, stand as a quantitative support towards viewing interacting socio-economic systems in the framework of SOC, an idea conjectured for years. △ Less

Submitted 4 October, 2022; v1 submitted 14 November, 2021; originally announced November 2021.

Comments: 22 pages, 14 figures; International Journal of Modern Physics C (in press)

Journal ref: International Journal of Modern Physics C (2023) 2350048

Scaling Behavior of the Hirsch Index for Failure Avalanches, Percolation Clusters and Paper Citations

Authors: Asim Ghosh, Bikas K. Chakrabarti, Dachepalli R. S. Ram, Manipushpak Mitra, Raju Maiti, Soumyajyoti Biswas, Suchismita Banerjee

Abstract: A popular measure for citation inequalities of individual scientists has been the Hirsch index ($h$). If for any scientist the number $n_c$ of citations is plotted against the serial number $n_p$ of the paper having those many citations (when the papers are ordered from highest cited to lowest) then $h$ corresponds to the nearest lower integer value of $n_p$ below the fixed point of the non-linear… ▽ More A popular measure for citation inequalities of individual scientists has been the Hirsch index ($h$). If for any scientist the number $n_c$ of citations is plotted against the serial number $n_p$ of the paper having those many citations (when the papers are ordered from highest cited to lowest) then $h$ corresponds to the nearest lower integer value of $n_p$ below the fixed point of the non-linear citation function (or given by $n_c = h = n_p$ if both $n_p$ and $n_c$ are dense set of integers near the $h$ value). The same index can be estimated (from $h=s=n_{s}$) for the avalanche or cluster of size ($s$) distributions ($n_s$) in elastic fiber bundle or percolation models. Another such inequality index, called the Kolkata index ($k$) says that $(1-k)$ fraction of papers attract $k$ fraction of citations ($k=0.80$ corresponds to the 80-20 law of Pareto). We find, for stress ($σ$), lattice occupation probability ($p$) or Kolkata index ($k$) near the bundle failure threshold ($σ_c$) or percolation threshold ($p_c$) or critical value of Kolkata index $k_c$, good fit to Widom-Stauffer like scaling $h/[\sqrt{N}/log N]$ = $f(\sqrt{N}[σ_c -σ]^α)$, $h/[\sqrt{N}/log N]=f(\sqrt{N}|p_c -p|^α)$ or $h/[\sqrt{N_c}/log N_c]=f(\sqrt{N_c}|k_c -k|^α)$ respectively, with asymptotically defined scaling function $f$, for systems of size $N$ (total number of fibers or lattice sites) or $N_c$ (total number of citations), and $α$ denoting the appropriate scaling exponent. We also show that if the number ($N_m$) of members of parliaments or national assemblies of different countries (with population $N$) is identified as their respective $h-$index, then the data fit the scaling relation $N_m \sim \sqrt N /log N$, resolving a major recent controversy. △ Less

Submitted 24 October, 2022; v1 submitted 29 September, 2021; originally announced September 2021.

Comments: 13 pages, 9 figures; Frontiers in Physics (in press)

An ITO Graphene hybrid integrated absorption modulator on Si-photonics for neuromorphic nonlinear activation

Authors: Rubab Amin, Jonathan K. George, Hao Wang, Rishi Maiti, Zhizhen Ma, Hamed Dalir, Jacob B. Khurgin, Volker J. Sorger

Abstract: The high demand for machine intelligence of doubling every three months is driving novel hardware solutions beyond charging of electrical wires given a resurrection to application specific integrated circuit (ASIC)-based accelerators. These innovations include photonic ASICs (P-ASIC) due to prospects of performing optical linear (and also nonlinear) operations, such as multiply-accumulate for vect… ▽ More The high demand for machine intelligence of doubling every three months is driving novel hardware solutions beyond charging of electrical wires given a resurrection to application specific integrated circuit (ASIC)-based accelerators. These innovations include photonic ASICs (P-ASIC) due to prospects of performing optical linear (and also nonlinear) operations, such as multiply-accumulate for vector matrix multiplications or convolutions, without iterative architectures. Such photonic linear algebra enables picosecond delay when photonic integrated circuits are utilized, via on-the-fly mathematics. However, the neurons full function includes providing a nonlinear activation function, knowns as thresholding, to enable decision making on inferred data. Many P-ASIC solutions performing this nonlinearity in the electronic domain, which brings challenges in terms of data throughput and delay, thus breaking the optical link and introducing increased system complexity via domain crossings. This work follows the notion of utilizing enhanced light-matter-interactions to provide efficient, compact, and engineerable electro-optic neuron nonlinearity. Here, we introduce and demonstrate a novel electro-optic device to engineer the shape of this optical nonlinearity to resemble a rectifying linear unit (ReLU) - the most-commonly used nonlinear activation function in neural networks. We combine the counter-directional transfer functions from heterostructures made out of two electro-optic materials to design a diode-like nonlinear response of the device. Integrating this nonlinearity into a photonic neural network, we show how the electrostatics of this thresholders gating junction improves machine learning inference accuracy and the energy efficiency of the neural network. △ Less

Submitted 2 September, 2021; originally announced September 2021.

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Authors: Rishi Maiti, Md Abid Shahriar Rahman Saadi, Rubab Amin, Ongun Ozcelik, Berkin Uluutku, Chandraman Patil, Can Suer, Santiago Solares, Volker J. Sorger

Abstract: Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for exam… ▽ More Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths. △ Less

Submitted 14 December, 2020; originally announced December 2020.

Low Dimensional Material based Electro-Optic Phase Modulation Performance Analysis

Authors: Rubab Amin, Rishi Maiti, Jacob B. Khurgin, Volker J. Sorger

Abstract: Electro-optic modulators are utilized ubiquitously ranging from applications in data communication to photonic neural networks. While tremendous progress has been made over the years, efficient phase-shifting modulators are challenged with fundamental tradeoffs, such as voltage-length, index change-losses or energy-bandwidth, and no single solution available checks all boxes. While voltage-driven… ▽ More Electro-optic modulators are utilized ubiquitously ranging from applications in data communication to photonic neural networks. While tremendous progress has been made over the years, efficient phase-shifting modulators are challenged with fundamental tradeoffs, such as voltage-length, index change-losses or energy-bandwidth, and no single solution available checks all boxes. While voltage-driven phase modulators, such as based on lithium niobate, offer low loss and high speed operation, their footprint of 10's of cm-scale is prohibitively large, especially for density-critical applications, for example in photonic neural networks. Ignoring modulators for quantum applications, where loss is critical, here we distinguish between current versus voltage-driven modulators. We focus on the former, since current-based schemes of emerging thin electro-optical materials have shown unity-strong index modulation suitable for heterogeneous integration into foundry waveguides. Here, we provide an in-depth ab-initio analysis of obtainable modulator performance based on heterogeneously integrating low-dimensional materials, i.e. graphene, thin films of indium tin oxide, and transition metal dichalcogenide monolayers into a plurality of optical waveguide designs atop silicon photonics. Using the fundamental modulator tradeoff of energy-bandwidth-product as a design-quality quantifier, we show that a small modal cross section, such as given by plasmonic modes, enables high-performance operation, physically realized by arguments on charge-distribution and low electrical resistance. An in-depth design understanding of phase-modulator performance, beyond doped-junctions in silicon, offers opportunities for micrometer-compact yet energy-bandwidth-ratio constrained modulators with timely opportunities to hardware-accelerate applications beyond data communication towards photonic machine intelligence. △ Less

Submitted 15 August, 2020; originally announced August 2020.

Heterogeneously Integrated ITO Plasmonic Mach-Zehnder Interferometric Modulator on SOI

Authors: Rubab Amin, Rishi Maiti, Yaliang Gui, Can Suer, Mario Miscuglio, Elham Heidari, Jacob B. Khurgin, Ray T. Chen, Hamed Dalir, Volker J Sorger

Abstract: Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active material choice should avail high index modulation while being easily integrated into Silicon photonics platforms. I… ▽ More Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active material choice should avail high index modulation while being easily integrated into Silicon photonics platforms. Indium tin oxide (ITO) offers such functionalities and has shown promising modulation capacity recently. Interestingly, the nanometer-thin unity-strong index modulation of ITO synergistically combines the high group-index in hybrid plasmonic with nanoscale optical modes. Following this design paradigm, here, we demonstrate a spectrally broadband, GHz-fast Mach-Zehnder interferometric modulator, exhibiting a high efficiency signified by a miniscule VpL of 95 Vum, deploying an one-micrometer compact electrostatically tunable plasmonic phase-shifter, based on heterogeneously integrated ITO thin films into silicon photonics. Furthermore we show, that this device paradigm enables spectrally broadband operation across the entire telecommunication near infrared C-band. Such sub-wavelength short efficient and fast modulators monolithically integrated into Silicon platform open up new possibilities for high-density photonic circuitry, which is critical for high interconnect density of photonic neural networks or applications in GHz-fast optical phased-arrays, for example. △ Less

Submitted 23 December, 2020; v1 submitted 30 June, 2020; originally announced July 2020.

Roadmap for Gain-Bandwidth-Product Enhanced Photodetectors

Authors: Volker J. Sorger, Rishi Maiti

Abstract: Photodetectors are key optoelectronic building blocks performing the essential optical-to-electrical signal conversion, and unlike solar cells, operate at a specific wavelength and at high signal or sensory speeds. Towards achieving high detector performance, device physics, however, places a fundamental limit of the achievable detector sensitivity, such as responsivity and gain, when simultaneous… ▽ More Photodetectors are key optoelectronic building blocks performing the essential optical-to-electrical signal conversion, and unlike solar cells, operate at a specific wavelength and at high signal or sensory speeds. Towards achieving high detector performance, device physics, however, places a fundamental limit of the achievable detector sensitivity, such as responsivity and gain, when simultaneously aimed to increasing the detectors temporal response, speed, known as the gain-bandwidth product (GBP). While detectors GBP has been increasing in recent years, the average GBP is still relatively modest (~10^6-10^7 Hz-A/W). Here we discuss photodetector performance limits and opportunities based on arguments from scaling length theory relating photocarrier channel length, mobility, electrical resistance with optical waveguide mode constrains. We show that short-channel detectors are synergistic with slot-waveguide approaches, and when combined, offer a high-degree of detector design synergy especially for the class of nanometer-thin materials. Indeed, we find that two dimensional material-based detectors are not limited by their low mobility and can, in principle, allow for 100 GHz fast response rates. However, contact resistance is still a challenge for such thin materials, a research topic that is still not addressed yet. An interim solution is to utilize heterojunction approaches for functionality separation. Nonetheless, atomistically- and nanometer-thin materials used in such next-generation scaling length theory based detectors also demand high material quality and monolithic integration strategies into photonic circuits including foundry-near processes. As it stands, this letter aims to guide the community if achieving the next generation photodetectors aiming for a performance target of GBP = 10^12 Hz-A/W. △ Less

Submitted 30 June, 2020; originally announced June 2020.

Broadband Sub-λ GHz ITO Plasmonic Mach-Zehnder Modulator on Silicon Photonics

Authors: Rubab Amin, Rishi Maiti, Yaliang Gui, Can Suer, Mario Miscuglio, Elham Heidari, Ray T. Chen, Hamed Dalir, Volker J. Sorger

Abstract: Here, we demonstrate a spectrally broadband, GHz-fast Mach-Zehnder interferometeric modulator, exhibiting a miniscule VpL of 95 V-um, deploying a sub-wavelength short electrostatically tunable plasmonic phase-shifter, based on heterogeneously integrated ITO thin films into silicon photonics. Here, we demonstrate a spectrally broadband, GHz-fast Mach-Zehnder interferometeric modulator, exhibiting a miniscule VpL of 95 V-um, deploying a sub-wavelength short electrostatically tunable plasmonic phase-shifter, based on heterogeneously integrated ITO thin films into silicon photonics. △ Less

Submitted 31 December, 2019; originally announced January 2020.

Strain-Engineered High Responsivity MoTe2 Photodetector for Silicon Photonic Integrated Circuits

Authors: R. Maiti, C. Patil, T. Xie, J. G. Azadani, M. A. S. R. Saadi, R. Amin, M. Miscuglio, D. Van Thourhout, S. D. Solares, T. Low, R. Agarwal, S. Bank, V. J. Sorger

Abstract: In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically-relevant properties leading to strong light-matter-interaction devices due to effects such as reduced coulomb screening or exci… ▽ More In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically-relevant properties leading to strong light-matter-interaction devices due to effects such as reduced coulomb screening or excitonic states. However, no efficient photodetector in the telecommunication C-band using 2D materials has been realized yet. Here, we demonstrate a MoTe2-based photodetector featuring strong photoresponse (responsivity = 0.5 A/W) operating at 1550nm on silicon photonic waveguide enabled by engineering the strain (4%) inside the photo-absorbing transition-metal-dichalcogenide film. We show that an induced tensile strain of ~4% reduces the bandgap of MoTe2 by about 0.2 eV by microscopically measuring the work-function across the device. Unlike Graphene-based photodetectors relying on a gapless band structure, this semiconductor-2D material detector shows a ~100X improved dark current enabling an efficient noise-equivalent power of just 90 pW/Hz^0.5. Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems. △ Less

Submitted 22 December, 2019; v1 submitted 31 October, 2019; originally announced December 2019.

A Lateral MOS-Capacitor Enabled ITO Mach-Zehnder Modulator for Beam Steering

Authors: Rubab Amin, Rishi Maiti, Jonathan K. George, Xiaoxuan Ma, Zhizhen Ma, Hamed Dalir, Mario Miscuglio, Volker J. Sorger

Abstract: Here, we experimentally demonstrate an Indium Tin Oxide (ITO) Mach-Zehnder interferometer heterogeneously integrated in silicon photonics. The phase shifter section is realized in a novel lateral MOS configuration, which, due to favorable electrostatic overlap, leads to efficient modulation (VπL = 63 Vum). This is achieved by (i) selecting a strong index changing material (ITO) and (ii) improving… ▽ More Here, we experimentally demonstrate an Indium Tin Oxide (ITO) Mach-Zehnder interferometer heterogeneously integrated in silicon photonics. The phase shifter section is realized in a novel lateral MOS configuration, which, due to favorable electrostatic overlap, leads to efficient modulation (VπL = 63 Vum). This is achieved by (i) selecting a strong index changing material (ITO) and (ii) improving the field overlap as verified by the electrostatic field lines. Furthermore, we show that this platform serves as a building block in an endfire silicon photonics optical phased array (OPA) with a half-wavelength pitch within the waveguides with anticipated performance, including narrow main beam lobe (<3°) and >10 dB suppression of the side lobes, while electrostatically steering the emission profile up to plus/minus 80°, and if further engineered, can lead not only towards nanosecond-fast beam steering capabilities in LiDAR systems but also in holographic display, free-space optical communications, and optical switches. △ Less

Submitted 1 November, 2019; v1 submitted 1 June, 2019; originally announced July 2019.

A Guide for Material and Design Choices for Electro-Optic Modulators and recent 2D-Material Silicon Modulator Demonstrations

Authors: Rubab Amin, Mario Zhizhen, Rishi Maiti, Mario Miscuglio, Hamed Dalir, Jacob B. Khurgin, Volker J. Sorger

Abstract: Electro-optic modulation performs a technological relevant functionality such as for communication, beam steering, or neuromorphic computing through providing the nonlinear activation function of a perceptron. Wile Silicon photonics enabled the integration and hence miniaturization of optoelectronic devices, the weak electro-optic performance of Silicon renders these modulators to be bulky and pow… ▽ More Electro-optic modulation performs a technological relevant functionality such as for communication, beam steering, or neuromorphic computing through providing the nonlinear activation function of a perceptron. Wile Silicon photonics enabled the integration and hence miniaturization of optoelectronic devices, the weak electro-optic performance of Silicon renders these modulators to be bulky and power-hungry compared to a single switch functionality known from electronics. To gain deeper insights into the physics and operation of modulators hetero-generous integration of emerging electro-optically active materials could enable separating light passive and low-loss light routing from active light manipulation. Here we discuss and review our recent work on a) fundamental performance vectors of electro-optic modulators, and b) showcase recent development of heterogeneous-integrated emerging EO materials into Si-photonics to include an ITO-based MZM, a Graphene hybrid-plasmon and the first TMD-MRR modulator using a microring resonator. Our results indicate a viable path for energy efficient and compact Silicon photonic based modulators. △ Less

Submitted 22 December, 2019; v1 submitted 25 December, 2018; originally announced December 2018.

Comments: arXiv admin note: text overlap with arXiv:1801.05046

Compact Graphene Plasmonic Slot Photodetector on Silicon-on-insulator with High Responsivity

Authors: Zhizhen Ma, Kazuya Kikunage, Hao Wang, Shuai Sun, Rubab Amin, Mohammad Tahersima, Rishi Maiti, Mario Miscuglio, Hamed Dalir, Volker J. Sorger

Abstract: Graphene has extraordinary electro-optic properties and is therefore a promising candidate for monolithic photonic devices such as photodetectors. However, the integration of this atom-thin layer material with bulky photonic components usually results in a weak light-graphene interaction leading to large device lengths limiting electro-optic performance. In contrast, here we demonstrate a plasmoni… ▽ More Graphene has extraordinary electro-optic properties and is therefore a promising candidate for monolithic photonic devices such as photodetectors. However, the integration of this atom-thin layer material with bulky photonic components usually results in a weak light-graphene interaction leading to large device lengths limiting electro-optic performance. In contrast, here we demonstrate a plasmonic slot graphene photodetector on silicon-on-insulator platform with high-responsivity given the 5 um-short device length. We observe that the maximum photocurrent, and hence the highest responsivity, scales inversely with the slot gap width. Using a dual-lithography step, we realize 15 nm narrow slots that show a 15-times higher responsivity per unit device-length compared to photonic graphene photodetectors. Furthermore, we reveal that the back-gated electrostatics is overshadowed by channel-do** contributions induced by the contacts of this ultra-short channel graphene photodetector. This leads to quasi charge neutrality, which explains both the previously-unseen offset between the maximum photovoltaic-based photocurrent relative to graphenes Dirac point and the observed non-ambipolar transport. Such micrometer compact and absorption-efficient photodetectors allow for short-carrier pathways in next-generation photonic components, while being an ideal testbed to study short-channel carrier physics in graphene optoelectronics. △ Less

Submitted 14 November, 2018; originally announced December 2018.

A semi-empirical integrated microring cavity approach for 2D material optical index identification at 1.55 μm

Authors: Rishi Maiti, Rohit A. Hemnani, Rubab Amin, Zhizhen Ma, Mohammad H. Tahersima, Tom A. Empante, Hamed Dalir, Ritesh Agarwal, Ludwig Bartels, Volker J. Sorger

Abstract: Atomically thin two-dimensional (2D) materials provide a wide range of basic building blocks with unique properties, making them ideal for heterogeneous integration with a mature chip platform for advances in optical communication technology. Control and understanding of the precise value of the optical index of these materials, however, is challenging, due to the small lateral flake dimension. He… ▽ More Atomically thin two-dimensional (2D) materials provide a wide range of basic building blocks with unique properties, making them ideal for heterogeneous integration with a mature chip platform for advances in optical communication technology. Control and understanding of the precise value of the optical index of these materials, however, is challenging, due to the small lateral flake dimension. Here we demonstrate a semi-empirical method to determine the index of a 2D material (nMoTe2 of 4.36+0.011i) near telecommunication-relevant wavelength by integrating few layers of MoTe2 onto a micro-ring resonator. The placement, control, and optical-property understanding of 2D materials with integrated photonics paves a way for further studies of active 2D material-based optoelectronics and circuits. △ Less

Submitted 22 December, 2019; v1 submitted 10 November, 2018; originally announced November 2018.

Comments: arXiv admin note: substantial text overlap with arXiv:1807.03945

Loss and Coupling Tuning via Heterogeneous Integration of MoS2 Layers in Silicon Photonics

Authors: Rishi Maiti, Chandraman Patil, Rohit Hemnani, Mario Miscuglio, Rubab Amin, Zhizhen Ma, Rimjhim Chaudhary, Charlie Johnson, Ludwig Bartels, Ritesh Agarwal, Volker J. Sorger

Abstract: Layered two-dimensional (2D) materials provide a wide range of unique properties as compared to their bulk counterpart, making them ideal for heterogeneous integration for on-chip interconnects. Hence, a detailed understanding of the loss and index change on Si integrated platform is a prerequisite for advances in opto-electronic devices impacting optical communication technology, signal processin… ▽ More Layered two-dimensional (2D) materials provide a wide range of unique properties as compared to their bulk counterpart, making them ideal for heterogeneous integration for on-chip interconnects. Hence, a detailed understanding of the loss and index change on Si integrated platform is a prerequisite for advances in opto-electronic devices impacting optical communication technology, signal processing, and possibly photonic-based computing. Here, we present an experimental guide to characterize transition metal dichalcogenides (TMDs), once monolithically integrated into the Silicon photonic platform at 1.55 um wavelength. We describe the passive tunable coupling effect of the resonator in terms of loss induced as a function of 2D material layer coverage length and thickness. Further, we demonstrate a TMD-ring based hybrid platform as a refractive index sensor where resonance shift has been mapped out as a function of flakes thickness which correlates well with our simulated data. These experimental findings on passive TMD-Si hybrid platform open up a new dimension by controlling the effective change in loss and index, which may lead to the potential application of 2D material based active on chip photonics. △ Less

Submitted 25 October, 2018; v1 submitted 23 October, 2018; originally announced October 2018.

0.52 V-mm ITO-based Mach-Zehnder Modulator in Silicon Photonics

Authors: Rubab Amin, Rishi Maiti, Caitlin Carfano, Zhizhen Ma, Mohammad H. Tahersima, Yigal Lilach, Dilan Ratnayake, Hamed Dalir, Volker J. Sorger

Abstract: Electro-optic modulators transform electronic signals into the optical domain and are critical components in modern telecommunication networks, RF photonics, and emerging applications in quantum photonics and beam steering. All these applications require integrated and voltage-efficient modulator solutions with compact formfactors that are seamlessly integratable with Silicon photonics platforms a… ▽ More Electro-optic modulators transform electronic signals into the optical domain and are critical components in modern telecommunication networks, RF photonics, and emerging applications in quantum photonics and beam steering. All these applications require integrated and voltage-efficient modulator solutions with compact formfactors that are seamlessly integratable with Silicon photonics platforms and feature near-CMOS material processing synergies. However, existing integrated modulators are challenged to meet these requirements. Conversely, emerging electro-optic materials heterogeneously integrated with Si photonics open a new avenue for device engineering. Indium tin oxide (ITO) is one such compelling material for heterogeneous integration in Si exhibiting formidable electro-optic effect characterized by unity order index at telecommunication frequencies. Here we overcome these limitations and demonstrate a monolithically integrated ITO electro- optic modulator based on a Mach Zehnder interferometer (MZI) featuring a high-performance half-wave voltage and active device length product, VpL = 0.52 V-mm. We show, how that the unity-strong index change enables a 30 micrometer-short pi-phase shifter operating ITO in the index-dominated region away from the epsilon-bear-zero ENZ point. This device experimentally confirms electrical phase shifting in ITO enabling its use in multifaceted applications including dense on-chip communication networks, nonlinearity for activation functions in photonic neural networks, and phased array applications for LiDAR. △ Less

Submitted 16 August, 2018; originally announced September 2018.

Solution Processed CMOS compatible Carbon Nano-dots Based Heterojunction for Enhanced UV Detector

Authors: Rishi Maiti, Subhrajit Mukherjee, Tamal Dey, Samit K Ray

Abstract: Carbon nanostructures technology has recently emerged as a key enabler for next-generation optoelectronic devices including deep UV detectors and light sources which is promising in health and environment monitoring. Here, we report the fabrication of solution processed Carbon nano-dots (CNDs)/n-Si heterojunction showing broadband spectral response with a peak responsivity of ~ 1.25 A/W in UV (~30… ▽ More Carbon nanostructures technology has recently emerged as a key enabler for next-generation optoelectronic devices including deep UV detectors and light sources which is promising in health and environment monitoring. Here, we report the fabrication of solution processed Carbon nano-dots (CNDs)/n-Si heterojunction showing broadband spectral response with a peak responsivity of ~ 1.25 A/W in UV (~300 nm) wavelength. The surface topography and chemical information of synthesized CNDs via a facile synthesis route have been characterized showing the presence of surface chemical states resulting broad optical emission. The CNDs/n-Si photo diodes exhibit very low dark current (~500 pA), excellent rectification ratio (~5*10^3), and very good photo-modulation in UV region. Given the solution-processing capability of the devices and extraordinary optical properties of CNDs, the use of CNDs will open up unique opportunities for future high-performance, low-cost DUV photo detectors. △ Less

Submitted 24 July, 2018; originally announced July 2018.

Comments: 10 pages, 3 figures

Spectrally-tunable Dielectric Grating-based Metasurface for Broadband Planar Light Concentration

Authors: Ameen Elikkottil, Mohammed H Tahersima, MVN Surendra Gupta, Rishi Maiti, Volker J. Sorger, Bala Pesala

Abstract: The energy consumption of buildings is increasing at a rapid pace due to urbanization, while net-zero energy buildings powered by renewable sources offer a green and sustainable solution. However, the limited rooftop space available on skyscrapers and multi-story buildings poses a challenge for large-scale integration of solar photovoltaic modules. Conventional photovoltaics solutions such as sili… ▽ More The energy consumption of buildings is increasing at a rapid pace due to urbanization, while net-zero energy buildings powered by renewable sources offer a green and sustainable solution. However, the limited rooftop space available on skyscrapers and multi-story buildings poses a challenge for large-scale integration of solar photovoltaic modules. Conventional photovoltaics solutions such as silicon solar panels block the visible light from entering the building rending them unfeasible to cover all building surfaces. Here, we demonstrate a novel dielectric metasurface (based-on silicon nitride grating) acting as a planar light concentrator. We integrate this functional device onto a window glass transmitting visible light while simultaneously guiding the near infrared portion (NIR) of sunlight to the edges of the glass window where it can be converted to electricity by a small PV module. Utilizing the grating design flexibility, we tune the spectra to enable guiding of the near NIR sunlight portion and realize polarization independence demonstrated using finite difference time domain simulations. Experimentally, we observe about 5.25% of optical guiding efficiency in the NIR region (700-1000 nm), leaving majority of the visible portion to be transmitted for natural room lighting. Integrating the solar cell at the window edge, we find a power conversion efficiency of about 4.2% of NIR light on a prototype of area 25 mm 2. We confirm that the majority of the loss is due to the absorption, scattering and fabrication non-uniformity over large area which can be further optimized in future. Such a functional window combining renewable energy generation, with room lighting, and building-envelope reduction could mitigate urban heat-islanding issues of modern cities. △ Less

Submitted 11 July, 2018; originally announced July 2018.

Microring Resonators Coupling Tunability by Heterogeneous 2D Material Integration

Authors: Rishi Maiti, Rohit Hemnani, Rubab Amin, Zhizhen Ma, Mohammad Tahersima, Thomas A. Empante, Hamed Dalir, Ritesh Agarwal, Ludwig Bartels, Volker J. Sorger

Abstract: Atomically thin 2D materials provide a wide range of basic building blocks with unique properties, making them ideal for heterogeneous integration with a mature chip platform. An understanding the role of excitons in transition metal dichalcogenides in Silicon photonic platform is a prerequisite for advances in optical communication technology, signal processing, and possibly computing. Here we de… ▽ More Atomically thin 2D materials provide a wide range of basic building blocks with unique properties, making them ideal for heterogeneous integration with a mature chip platform. An understanding the role of excitons in transition metal dichalcogenides in Silicon photonic platform is a prerequisite for advances in optical communication technology, signal processing, and possibly computing. Here we demonstrate passive tunable coupling by integrating few layers of MoTe2 on a micro-ring resonator. We find a TMD-to-rings circumference coverage length ratio to place the ring into critical coupling to be about 10% as determined from the variation of spectral resonance visibility and loss as a function of TMD coverage. Using this TMD ring heterostructure, we further demonstrate a semi-empirical method to determine the index of an unknown TMD material (nMoTe2 of 4.36+.011i) near for telecommunication-relevant wavelength. △ Less

Submitted 19 July, 2018; v1 submitted 11 July, 2018; originally announced July 2018.

Towards a 2D Printer: A Deterministic Cross Contamination-free Transfer Method for Atomically Layered Materials

Authors: Rohit A. Hemnani, Caitlin Carfano, Jason P. Tischler, Mohammad H. Tahersima, Rishi Maiti, Ludwig Bartels, Ritesh Agarwal, Volker J. Sorger

Abstract: Precision and chip contamination-free placement of two-dimensional (2D) materials is expected to accelerate both the study of fundamental properties and novel device functionality. Current transfer methods of 2D materials onto an arbitrary substrate deploy wet chemistry and viscoelastic stam**. However, these methods produce a) significant cross contamination of the substrate due to the lack of… ▽ More Precision and chip contamination-free placement of two-dimensional (2D) materials is expected to accelerate both the study of fundamental properties and novel device functionality. Current transfer methods of 2D materials onto an arbitrary substrate deploy wet chemistry and viscoelastic stam**. However, these methods produce a) significant cross contamination of the substrate due to the lack of spatial selectivity b) may not be compatible with chemically sensitive device structures, and c) are challenged with respect to spatial alignment. Here, we demonstrate a novel method of transferring 2D materials resembling the functionality known from printing; utilizing a combination of a sharp micro-stamper and viscoelastic polymer, we show precise placement of individual 2D materials resulting in vanishing cross contamination to the substrate. Our 2D printer-method results show an aerial cross contamination improvement of two to three orders of magnitude relative to state-of-the-art dry and direct transfer methods. Moreover, we find that the 2D material quality is preserved in this transfer method. Testing this 2D material printer on taped-out integrated Silicon photonic chips, we find that the micro-stamper stam** transfer does not physically harm the underneath Silicon nanophotonic structures such as waveguides or micro-ring resonators receiving the 2D material. Such accurate and substrate-benign transfer method for 2D materials could be industrialized for rapid device prototy** due to its high time-reduction, accuracy, and contamination-free process. △ Less

Submitted 18 January, 2018; originally announced January 2018.

Attojoule-Efficient Graphene Optical Modulators

Authors: Rubab Amin, Zhizhen Ma, Rishi Maiti, Sikandar Khan, Jacob B. Khurgin, Hamed Dalir, Volker J. Sorger

Abstract: Electro-optic modulation is a technology-relevant function for signal keying, beam steering, or neuromorphic computing through providing the nonlinear activation function of a perceptron. With silicon-based modulators being bulky and inefficient, we here discuss graphene-based devices heterogeneously integrated. This study provides a critical and encompassing discussing of the physics and performa… ▽ More Electro-optic modulation is a technology-relevant function for signal keying, beam steering, or neuromorphic computing through providing the nonlinear activation function of a perceptron. With silicon-based modulators being bulky and inefficient, we here discuss graphene-based devices heterogeneously integrated. This study provides a critical and encompassing discussing of the physics and performance of graphene modulators rather than collecting relevant published work. We provide a holistic analysis of the underlying physics of modulators including the graphenes index tunability, the underlying optical mode, and discuss resulting performance vectors of this novel class of hybrid modulators. Our results show that the reducing the modal area, and reducing the effective broadening of the active material are key to improving device performance defined by the ratio of energy-bandwidth and footprint. We further show how the waveguides polarization must be in-plane with graphene such as given by plasmonic-slot structures. A high device performance can be obtained by introducing multi- or bi-layer graphene modulator designs. Lastly, we present recent results of a graphene-based hybrid-photon-plasmon modulator on a silicon platform, requiring near Boltzmann approximation (100mV) low drive voltages. Being physically compact this 100 aJ/bit modulator opens the path towards a new class of attojoule opto-electronics. △ Less

Submitted 15 January, 2018; originally announced January 2018.

Comments: arXiv admin note: text overlap with arXiv:1502.04672 by other authors