-
Pixelated silicon detector for radiation beam profile measurements
Authors:
Joonas Tikkanen,
Stefanie Kirschenmann,
Nikita Kramarenko,
Erik Brücken,
Pirkitta Koponen,
Panja Luukka,
Teemu Siiskonen,
Raimo Turpeinen,
Jennifer Ott
Abstract:
A pixelated silicon detector, developed originally for particle physics experiments, was used for a beam profile measurement of a Co-60 irradiator in a water phantom. The beam profile was compared to a profile measured with a pinpoint ionization chamber. The differences in the pixel detector and pinpoint chamber relative profiles were within approximately 0.02, and after calculating correction fac…
▽ More
A pixelated silicon detector, developed originally for particle physics experiments, was used for a beam profile measurement of a Co-60 irradiator in a water phantom. The beam profile was compared to a profile measured with a pinpoint ionization chamber. The differences in the pixel detector and pinpoint chamber relative profiles were within approximately 0.02, and after calculating correction factors with Monte Carlo simulations for the pixel detector, the differences were decreased to almost less than 0.005. The detector's capability to measure pulse-height was used to record an electron pulse-height spectrum in water in the Co-60 beam, and the results agreed well with simulations.
△ Less
Submitted 9 December, 2022;
originally announced December 2022.
-
Characterisation of Gamma-irradiated MCz-Silicon Detectors with a High-$K$ Negative Oxide as Field Insulator
Authors:
S. Bharthuar,
M. Bezak,
E. Brücken,
A Gädda,
M. Golovleva,
A. Karadzhinova-Ferrer,
A. Karjalainen,
N. Kramarenko,
S. Kirschenmann,
P. Luukka,
J. Ott,
E. Tuominen,
M. Väänänen
Abstract:
The high-luminosity operation of the Tracker in the Compact Muon Solenid (CMS) detector at the Large Hadron Collider (LHC) experiment calls for the development of silicon-based sensors. This involves implementation of AC-coupling to micro-scale pixel sensor areas to provide enhanced isolation of radiation-induced leakage currents. The motivation of this study is the development of AC-pixel sensors…
▽ More
The high-luminosity operation of the Tracker in the Compact Muon Solenid (CMS) detector at the Large Hadron Collider (LHC) experiment calls for the development of silicon-based sensors. This involves implementation of AC-coupling to micro-scale pixel sensor areas to provide enhanced isolation of radiation-induced leakage currents. The motivation of this study is the development of AC-pixel sensors with negative oxides (such as aluminium oxide - Al$_2$O$_3$ and hafnium oxide - HfO$_2$) as field insulators that possess good dielectric strength and provide radiation hardness. Thin films of Al$_2$O$_3$ and HfO$_2$ grown by atomic layer deposition (ALD) method were used as dielectrics for capacitive coupling. A comparison study based on dielectric material used in MOS capacitors indicate HfO$_2$ as a better candidate since it provides higher sensitivity (where, the term sensitivity is defined as the ratio of the change in flat-band voltage to dose) to negative charge accumulation with gamma irradiation.
Further, space charge sign inversion was observed for sensors processed on high resistivity p-type Magnetic Czochralski silicon (MCz-Si) substrates that were irradiated with gamma rays up to a dose of 1 MGy. The inter-pixel resistance values of heavily gamma irradiated AC-coupled pixel sensors suggest that high-$K$ negative oxides as field insulators provide a good electrical isolation between the pixels.
△ Less
Submitted 19 November, 2022; v1 submitted 16 November, 2022;
originally announced November 2022.
-
Quality assessment of Cadmium Telluride as a detector material for multispectral medical imaging
Authors:
S. Kirschenmann,
M. Bezak,
S. Bharthuar,
E. Brücken,
M. Golovleva,
A. Gädda,
M. Kalliokoski,
A. Karadzhinova-Ferrer,
P. Koponen,
N. Kramarenko,
P. Luukka,
J. Ott,
J. Tikkanen,
R. Turpeinen,
A. Winkler
Abstract:
Cadmium Telluride (CdTe) is a high-Z material with excellent photon radiation absorption properties, making it a promising material to include in radiation detection technologies. However, the brittleness of CdTe crystals as well as their varying concentration of defects necessitate a thorough quality assessment before the complex detector processing procedure. We present our quality assessment of…
▽ More
Cadmium Telluride (CdTe) is a high-Z material with excellent photon radiation absorption properties, making it a promising material to include in radiation detection technologies. However, the brittleness of CdTe crystals as well as their varying concentration of defects necessitate a thorough quality assessment before the complex detector processing procedure. We present our quality assessment of CdTe as a detector material for multispectral medical imaging, a research which is conducted as part of the Consortium Project Multispectral Photon-counting for Medical Imaging and Beam characterization (MPMIB). The aim of the project is to develop novel CdTe detectors and obtain spectrum-per-pixel information that make the distinction between different radiation types and tissues possible. To evaluate the defect density inside the crystals -- which can deteriorate the detector performance -- we employ infrared microscopy (IRM). Posterior data analysis allows us to visualise the defect distributions as 3D defect maps. Additionally, we investigate front and backside differences of the material with current-voltage (IV) measurements to determine the preferred surface for the pixelisation of the crystal, and perform test measurements with the prototypes to provide feedback for further processing. We present the different parts of our quality assessment chain and will close with first experimental results obtained with one of our prototype PC detectors in a small tomographic setup.
△ Less
Submitted 26 January, 2022;
originally announced January 2022.
-
Employing infrared microscopy (IRM) in combination with a pre-trained neural network to visualise and analyse the defect distribution in Cadmium Telluride crystals
Authors:
S. Kirschenmann,
S. Bharthuar,
E. Brücken,
M. Golovleva,
A. Gädda,
M. Kalliokoski,
P. Luukka,
J. Ott,
A. Winkler
Abstract:
While Cadmium Telluride (CdTe) excels in terms of photon radiation absorption properties and outperforms silicon (Si) in this respect, the crystal growth, characterization and processing into a radiation detector is much more complicated. Additionally, large concentrations of extended crystallographic defects, such as grain boundaries, twins, and tellurium (Te) inclusions, vary from crystal to cry…
▽ More
While Cadmium Telluride (CdTe) excels in terms of photon radiation absorption properties and outperforms silicon (Si) in this respect, the crystal growth, characterization and processing into a radiation detector is much more complicated. Additionally, large concentrations of extended crystallographic defects, such as grain boundaries, twins, and tellurium (Te) inclusions, vary from crystal to crystal and can reduce the spectroscopic performance of the processed detector. A quality assessment of the material prior to the complex fabrication process is therefore crucial. To locate the Te-defects, we scan the crystals with infrared microscopy (IRM) in different layers, obtaining a 3D view of the defect distribution. This provides us with important information on the defect density and locations of Te inclusions, and thus a handle to assess the quality of the material. For the classification of defects in the large amount of IRM image data, a convolutional neural network is employed. From the post-processed and analysed IRM data, 3D defect maps of the CdTe crystals are created, which make different patterns of defect agglomerations inside the crystals visible. In total, more than 100 crystals were scanned with the current IRM setup. In this paper, we compare two crystal batches, each consisting of 12 samples. We find significant differences in the defect distributions of the crystals.
△ Less
Submitted 18 August, 2021;
originally announced August 2021.
-
Multispectral Photon-Counting for Medical Imaging and Beam Characterization
Authors:
E. Brücken,
S. Bharthuar,
M. Emzir,
M. Golovleva,
A. Gädda,
R. Hostettler,
J. Härkönen,
S. Kirschenmann,
V. Litichevskyi,
P. Luukka,
L. Martikainen,
T. Naaranoja,
I. Nincă,
J. Ott,
H. Petrow,
Z. Purisha,
T. Siiskonen,
S. Särkkä,
J. Tikkanen,
T. Tuuva,
A. Winkler
Abstract:
We present the current status of our project of develo** a photon counting detector for medical imaging. An example motivation lays in producing a monitoring and dosimetry device for boron neutron capture therapy, currently not commercially available. Our approach combines in-house developed detectors based on cadmium telluride or thick silicon with readout chip technology developed for particle…
▽ More
We present the current status of our project of develo** a photon counting detector for medical imaging. An example motivation lays in producing a monitoring and dosimetry device for boron neutron capture therapy, currently not commercially available. Our approach combines in-house developed detectors based on cadmium telluride or thick silicon with readout chip technology developed for particle physics experiments at CERN. Here we describe the manufacturing process of our sensors as well as the processing steps for the assembly of first prototypes. The prototypes use currently the PSI46digV2.1-r readout chip. The accompanying readout electronics chain that was used for first measurements will also be discussed. Finally we present an advanced algorithm developed by us for image reconstruction using such photon counting detectors with focus on boron neutron capture therapy. This work is conducted within a consortium of Finnish research groups from Helsinki Institute of Physics, Aalto University, Lappeenranta-Lahti University of Technology LUT and Radiation and Nuclear Safety Authority (STUK) under the RADDESS program of Academy of Finland. Keywords: Solid state detectors, X-ray detectors, Gamma detectors, Neutron detectors, Instrumentation for hadron therapy, Medical-image reconstruction methods and algorithms.
△ Less
Submitted 20 February, 2020; v1 submitted 8 January, 2020;
originally announced January 2020.
-
Test Beam Performance Measurements for the Phase I Upgrade of the CMS Pixel Detector
Authors:
M. Dragicevic,
M. Friedl,
J. Hrubec,
H. Steininger,
A. Gädda,
J. Härkönen,
T. Lampén,
P. Luukka,
T. Peltola,
E. Tuominen,
E. Tuovinen,
A. Winkler,
P. Eerola,
T. Tuuva,
G. Baulieu,
G. Boudoul,
L. Caponetto,
C. Combaret,
D. Contardo,
T. Dupasquier,
G. Gallbit,
N. Lumb,
L. Mirabito,
S. Perries,
M. Vander Donckt
, et al. (462 additional authors not shown)
Abstract:
A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator…
▽ More
A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator thresholds. In this paper, comprehensive test beam studies are presented, which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency is $99.95\pm0.05\,\%$, while the intrinsic spatial resolutions are $4.80\pm0.25\,μ\mathrm{m}$ and $7.99\pm0.21\,μ\mathrm{m}$ along the $100\,μ\mathrm{m}$ and $150\,μ\mathrm{m}$ pixel pitch, respectively. The findings are compared to a detailed Monte Carlo simulation of the pixel detector and good agreement is found.
△ Less
Submitted 1 June, 2017;
originally announced June 2017.
-
Trap** in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker
Authors:
W. Adam,
T. Bergauer,
M. Dragicevic,
M. Friedl,
R. Fruehwirth,
M. Hoch,
J. Hrubec,
M. Krammer,
W. Treberspurg,
W. Waltenberger,
S. Alderweireldt,
W. Beaumont,
X. Janssen,
S. Luyckx,
P. Van Mechelen,
N. Van Remortel,
A. Van Spilbeeck,
P. Barria,
C. Caillol,
B. Clerbaux,
G. De Lentdecker,
D. Dobur,
L. Favart,
A. Grebenyuk,
Th. Lenzi
, et al. (663 additional authors not shown)
Abstract:
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determi…
▽ More
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trap** rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trap** rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trap** rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
△ Less
Submitted 7 May, 2015;
originally announced May 2015.
-
Processing and characterization of epitaxial GaAs radiation detectors
Authors:
X. Wu,
T. Peltola,
T. Arsenovich,
A. Gädda,
J. Härkönen,
A. Junkes,
A. Karadzhinova,
P. Kostamo,
H. Lipsanen,
P. Luukka,
M. Mattila,
S. Nenonen,
T. Riekkinen,
E. Tuominen,
A. Winkler
Abstract:
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $μ\textrm{m}$ - 130 $μ\textrm{m}$ thick epitaxial absorption volume. Thick undoped and heavily doped p$^+$ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase…
▽ More
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $μ\textrm{m}$ - 130 $μ\textrm{m}$ thick epitaxial absorption volume. Thick undoped and heavily doped p$^+$ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor, the growth rate of which was about 10 $μ\textrm{m}$/h. The GaAs p$^+$/i/n$^+$ detectors were characterized by Capacitance Voltage ($CV$), Current Voltage ($IV$), Transient Current Technique (TCT) and Deep Level Transient Spectroscopy (DLTS) measurements. The full depletion voltage ($V_{\textrm{fd}}$) of the detectors with 110 $μ\textrm{m}$ epi-layer thickness is in the range of 8 V - 15 V and the leakage current density is about 10 nA/cm$^2$. The signal transit time determined by TCT is about 5 ns when the bias voltage is well above the value that produces the peak saturation drift velocity of electrons in GaAs at a given thickness. Numerical simulations with an appropriate defect model agree with the experimental results.
△ Less
Submitted 13 March, 2015;
originally announced March 2015.
-
Novel Data Acquisition System for Silicon Tracking Detectors
Authors:
L. A. Wendland,
K. Banzuzi,
S. Czellar,
A. Heikkinen,
J. Harkonen,
P. Johansson,
V. Karimaki,
T. Lampen,
P. Luukka,
P. Mehtala,
J. Niku,
S. Nummela,
J. Nysten,
J. Simpura,
E. Tuovinen,
E. Tuominen,
J. Tuominiemi,
D. Ungaro,
T. Vaarala,
M. Voutilainen,
A. Zibellini
Abstract:
We have developed a novel data acquisition system for measuring tracking parameters of a silicon detector in a particle beam. The system is based on a commercial Analog-to-Digital VME module and a PC Linux based Data Acquisition System. This DAQ is realized with C++ code using object-oriented techniques. Track parameters for the beam particles were reconstructed using off-line analysis code and…
▽ More
We have developed a novel data acquisition system for measuring tracking parameters of a silicon detector in a particle beam. The system is based on a commercial Analog-to-Digital VME module and a PC Linux based Data Acquisition System. This DAQ is realized with C++ code using object-oriented techniques. Track parameters for the beam particles were reconstructed using off-line analysis code and automatic detector position alignment algorithm.
The new DAQ was used to test novel Czochralski type silicon detectors. The important silicon detector parameters, including signal size distributions and signal to noise distributions, were successfully extracted from the detector under study. The efficiency of the detector was measured to be 95 %, the resolution about 10 micrometers, and the signal to noise ratio about 10.
△ Less
Submitted 2 June, 2003;
originally announced June 2003.
