Spin injection across a III-V/chiral perovskite interface enabling spin accumulation at room temperature
Authors:
Matthew P. Hautzinger,
Xin Pan,
Steven C. Hayden,
Jiselle Y. Ye,
Qi Jiang,
Mickey J. Wilson,
Yifan Dong,
Emily K. Raulerson,
Ian A. Leahy,
Chun-Sheng Jiang,
Joseph M. Luther,
Yuan Lu,
Katherine Jungjohann,
Z. Valy Vardeny,
Joseph J. Berry,
Kirstin Alberi,
Matthew C. Beard
Abstract:
Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of opto-electronic functionality. Current efforts are limited due to inherent inefficiencies associated with spin injection into semiconductor structures. Here, we demonstrate spin injection across chiral halide perovskite/III-V interfaces achieving spin accumulation in a…
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Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of opto-electronic functionality. Current efforts are limited due to inherent inefficiencies associated with spin injection into semiconductor structures. Here, we demonstrate spin injection across chiral halide perovskite/III-V interfaces achieving spin accumulation in a standard semiconductor III-V (AlxGa1-x)0.5In0.5P multiple quantum well (MQW) light emitting diode (LED). The spin accumulation in the MQW is detected via emission of circularly polarized light with a degree of polarization of up to ~15%. The chiral perovskite/III-V interface was characterized with X-ray photoemission spectroscopy (XPS), cross sectional scanning Kelvin probe force microscopy, and cross section transmission electron microscopy (TEM) imaging, showing a clean semiconductor/semiconductor interface where the fermi-level can equilibrate. These findings demonstrate chiral perovskite semiconductors can transform well-developed semiconductor platforms to ones that can also control spin.
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Submitted 14 November, 2023; v1 submitted 8 September, 2023;
originally announced September 2023.
