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High-power and narrow-linewidth laser on thin-film lithium niobate enabled by photonic wire bonding
Authors:
Cornelis A. A. Franken,
Rebecca Cheng,
Keith Powell,
Georgios Kyriazidis,
Victoria Rosborough,
Juergen Musolf,
Maximilian Shah,
David R. Barton III,
Gage Hills,
Leif Johansson,
Klaus-J. Boller,
Marko Lončar
Abstract:
Thin-film lithium niobate (TFLN) has emerged as a promising platform for the realization of high performance chip-scale optical systems, spanning a range of applications from optical communications to microwave photonics. Such applications rely on the integration of multiple components onto a single platform. However, while many of these components have already been demonstrated on the TFLN platfo…
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Thin-film lithium niobate (TFLN) has emerged as a promising platform for the realization of high performance chip-scale optical systems, spanning a range of applications from optical communications to microwave photonics. Such applications rely on the integration of multiple components onto a single platform. However, while many of these components have already been demonstrated on the TFLN platform, to date, a major bottleneck of the platform is the existence of a tunable, high-power, and narrow-linewidth on-chip laser. Here, we address this problem using photonic wire bonding to integrate optical amplifiers with a thin-film lithium niobate feedback circuit, and demonstrate an extended cavity diode laser yielding high on-chip power of 78 mW, side mode suppression larger than 60 dB and wide wavelength tunability over 43 nm. The laser frequency stability over short timescales shows an ultra-narrow intrinsic linewidth of 550 Hz. Long-term recordings indicate a high passive stability of the photonic wire bonded laser with 58 hours of mode-hop-free operation, with a trend in the frequency drift of only 4.4 MHz/h. This work verifies photonic wire bonding as a viable integration solution for high performance on-chip lasers, opening the path to system level upscaling and Watt-level output powers.
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Submitted 5 July, 2024; v1 submitted 28 June, 2024;
originally announced July 2024.
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Photonics-integrated terahertz transmission lines
Authors:
Y. Lampert,
A. Shams-Ansari,
A. Gaier,
A. Tomasino,
S. Rajabali,
L. Magalhaes,
M. Lončar,
I. -C. Benea-Chelmus
Abstract:
Modern communication and sensing technologies rely on connecting the optical domain with the microwave domain. Terahertz technologies, spanning increased frequencies from 100 GHz to 10 THz, are critical for providing larger bandwidths and faster switching capabilities. Despite progress in high-frequency electronic sources and detectors, these technologies lack a direct link to the optical domain,…
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Modern communication and sensing technologies rely on connecting the optical domain with the microwave domain. Terahertz technologies, spanning increased frequencies from 100 GHz to 10 THz, are critical for providing larger bandwidths and faster switching capabilities. Despite progress in high-frequency electronic sources and detectors, these technologies lack a direct link to the optical domain, and face challenges with increasing frequencies (> 1 THz). Nonlinear processes, such as optical rectification, offer potential solutions for terahertz generation but are currently limited to discrete components based on bulk nonlinear crystals, missing out miniaturisation opportunities from integration of optical circuits with terahertz ones. We address this challenge by integrating phase-matched terahertz transmission lines with photonic circuits in a single hybrid architecture on the thin-film lithium niobate~(TFLN) platform. This design demonstrates phase-matched, broadband terahertz emission spanning four octaves (200 GHz to 3.5 THz) through broadband down-conversion of optical signals at telecommunication wavelengths. The micron-sized transmission lines provide terahertz field confinement with minimal radiative loss, enabling compact THz cavities embedded in integrated photonic circuits. This integration is crucial for leveraging photonics' advantages in low-noise, low-loss, and high-speed operations for terahertz generation. Our platform can readily be integrated with other mature photonics components, such as electro-optic modulators, frequency comb sources, or femtosecond sources to pave the way for compact, power-efficient, and frequency-agile broadband sources with applications in telecommunications, spectroscopy, quantum electrodynamics and optical computing.
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Submitted 21 June, 2024;
originally announced June 2024.
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Stable electro-optic modulators using thin-film lithium tantalate
Authors:
Keith Powell,
Xudong Li,
Daniel Assumpcao,
Letícia Magalhães,
Neil Sinclair,
Marko Lončar
Abstract:
We demonstrate electro-optic modulators realized in low-loss thin-film lithium tantalate with superior DC-stability (<1 dB power fluctuation from quadrature with 12.1 dBm input) compared to equivalent thin-film lithium niobate modulators (5 dB fluctuation) over 46 hours.
We demonstrate electro-optic modulators realized in low-loss thin-film lithium tantalate with superior DC-stability (<1 dB power fluctuation from quadrature with 12.1 dBm input) compared to equivalent thin-film lithium niobate modulators (5 dB fluctuation) over 46 hours.
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Submitted 8 May, 2024;
originally announced May 2024.
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A Thin Film Lithium Niobate Near-Infrared Platform for Multiplexing Quantum Nodes
Authors:
Daniel Assumpcao,
Dylan Renaud,
Aida Baradari,
Beibei Zeng,
Chawina De-Eknamkul,
C. J. Xin,
Amirhassan Shams-Ansari,
David Barton,
Bartholomeus Machielse,
Marko Loncar
Abstract:
Practical quantum networks will require quantum nodes consisting of many memory qubits. This in turn will increase the complexity of the photonic circuits needed to control each qubit and will require strategies to multiplex memories and overcome the inhomogeneous distribution of their transition frequencies. Integrated photonics operating at visible to near-infrared (VNIR) wavelength range, compa…
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Practical quantum networks will require quantum nodes consisting of many memory qubits. This in turn will increase the complexity of the photonic circuits needed to control each qubit and will require strategies to multiplex memories and overcome the inhomogeneous distribution of their transition frequencies. Integrated photonics operating at visible to near-infrared (VNIR) wavelength range, compatible with the transition frequencies of leading quantum memory systems, can provide solutions to these needs. In this work, we realize a VNIR thin-film lithium niobate (TFLN) integrated photonics platform with the key components to meet these requirements. These include low-loss couplers ($<$ 1 dB/facet), switches ($>$ 20 dB extinction), and high-bandwidth electro-optic modulators ($>$ 50 GHz). With these devices we demonstrate high-efficiency and CW-compatible frequency shifting ($>$ 50 $\%$ efficiency at 15 GHz), as well as simultaneous laser amplitude and frequency control through a nested modulator structure. Finally, we highlight an architecture for multiplexing quantum memories using the demonstrated TFLN components, and outline how this platform can enable a 2-order of magnitude improvement in entanglement rates over single memory nodes. Our results demonstrate that TFLN can meet the necessary performance and scalability benchmarks to enable large-scale quantum nodes.
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Submitted 6 May, 2024;
originally announced May 2024.
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Wavelength-accurate and wafer-scale process for nonlinear frequency mixers in thin-film lithium niobate
Authors:
C. J. Xin,
Shengyuan Lu,
Jiayu Yang,
Amirhassan Shams-Ansari,
Boris Desiatov,
Letícia S. Magalhães,
Soumya S. Ghosh,
Erin McGee,
Dylan Renaud,
Nicholas Achuthan,
Arseniy Zvyagintsev,
David Barton III,
Neil Sinclair,
Marko Lončar
Abstract:
Recent advancements in thin-film lithium niobate (TFLN) photonics have led to a new generation of high-performance electro-optic devices, including modulators, frequency combs, and microwave-to-optical transducers. However, the broader adoption of TFLN-based devices that rely on all-optical nonlinearities have been limited by the sensitivity of quasi-phase matching (QPM), realized via ferroelectri…
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Recent advancements in thin-film lithium niobate (TFLN) photonics have led to a new generation of high-performance electro-optic devices, including modulators, frequency combs, and microwave-to-optical transducers. However, the broader adoption of TFLN-based devices that rely on all-optical nonlinearities have been limited by the sensitivity of quasi-phase matching (QPM), realized via ferroelectric poling, to fabrication tolerances. Here, we propose a scalable fabrication process aimed at improving the wavelength-accuracy of optical frequency mixers in TFLN. In contrast to the conventional pole-before-etch approach, we first define the waveguide in TFLN and then perform ferroelectric poling. This sequence allows for precise metrology before and after waveguide definition to fully capture the geometry imperfections. Systematic errors can also be calibrated by measuring a subset of devices to fine-tune the QPM design for remaining devices on the wafer. Using this method, we fabricated a large number of second harmonic generation devices aimed at generating 737 nm light, with 73% operating within 5 nm of the target wavelength. Furthermore, we also demonstrate thermo-optic tuning and trimming of the devices via cladding deposition, with the former bringing ~96% of tested devices to the target wavelength. Our technique enables the rapid growth of integrated quantum frequency converters, photon pair sources, and optical parametric amplifiers, thus facilitating the integration of TFLN-based nonlinear frequency mixers into more complex and functional photonic systems.
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Submitted 18 April, 2024;
originally announced April 2024.
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Integrated electro-optics on thin-film lithium niobate
Authors:
Yaowen Hu,
Di Zhu,
Shengyuan Lu,
Xinrui Zhu,
Yunxiang Song,
Dylan Renaud,
Daniel Assumpcao,
Rebecca Cheng,
CJ Xin,
Matthew Yeh,
Hana Warner,
Xiangwen Guo,
Amirhassan Shams-Ansari,
David Barton,
Neil Sinclair,
Marko Loncar
Abstract:
Electro-optics serves as the crucial bridge between electronics and photonics, unlocking a wide array of applications ranging from communications and computing to sensing and quantum information. Integrated electro-optics approaches in particular enable essential electronic high-speed control for photonics while offering substantial photonic parallelism for electronics. Recent strides in thin-film…
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Electro-optics serves as the crucial bridge between electronics and photonics, unlocking a wide array of applications ranging from communications and computing to sensing and quantum information. Integrated electro-optics approaches in particular enable essential electronic high-speed control for photonics while offering substantial photonic parallelism for electronics. Recent strides in thin-film lithium niobate photonics have ushered revolutionary advancements in electro-optics. This technology not only offers the requisite strong electro-optic coupling but also boasts ultra-low optical loss and high microwave bandwidth. Further, its tight confinement and compatibility with nanofabrication allow for unprecedented reconfigurability and scalability, facilitating the creation of novel and intricate devices and systems that were once deemed nearly impossible in bulk systems. Building upon this platform, the field has witnessed the emergence of various groundbreaking electro-optic devices surpassing the current state of the art, and introducing functionalities that were previously non-existent. This technological leap forward provides a unique framework to explore various realms of physics as well, including photonic non-Hermitian synthetic dimensions, active topological physics, and quantum electro-optics. In this review, we present the fundamental principles of electro-optics, drawing connections between fundamental science and the forefront of technology. We discuss the accomplishments and future prospects of integrated electro-optics, enabled by thin-film lithium niobate platform.
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Submitted 11 April, 2024; v1 submitted 9 April, 2024;
originally announced April 2024.
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Octave-spanning Kerr soliton frequency combs in dispersion- and dissipation-engineered lithium niobate microresonators
Authors:
Yunxiang Song,
Yaowen Hu,
Xinrui Zhu,
Kiyoul Yang,
Marko Loncar
Abstract:
Dissipative Kerr solitons from optical microresonators, commonly referred to as soliton microcombs, have been developed for a broad range of applications, including precision measurement, optical frequency synthesis, and ultra-stable microwave and millimeter wave generation, all on a chip. An important goal for microcombs is self referencing, which requires octave-spanning bandwidths to detect and…
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Dissipative Kerr solitons from optical microresonators, commonly referred to as soliton microcombs, have been developed for a broad range of applications, including precision measurement, optical frequency synthesis, and ultra-stable microwave and millimeter wave generation, all on a chip. An important goal for microcombs is self referencing, which requires octave-spanning bandwidths to detect and stabilize the comb carrier envelope offset frequency. Further, detection and locking of the comb spacings are often achieved using frequency division by electro-optic modulation. The thin-film lithium niobate photonic platform, with its low loss, strong second- and third-order nonlinearity, as well as large Pockels effect, is ideally suited for these tasks. However, octave-spanning soliton microcombs are challenging to demonstrate on this platform, largely complicated by strong Raman effects hindering reliable fabrication of soliton devices. Here, we demonstrate entirely connected and octave-spanning soliton microcombs on thin-film lithium niobate. With appropriate control over microresonator free spectral range and dissipation spectrum, we show that soliton-inhibiting Raman effects are suppressed, and soliton devices are fabricated with near-unity yield. Our work offers an unambiguous method for soliton generation on strongly Raman-active materials. Further, it anticipates monolithically integrated, self-referenced frequency standards in conjunction with established technologies, such as periodically poled waveguides and electro-optic modulators, on thin-film lithium niobate.
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Submitted 25 May, 2024; v1 submitted 2 March, 2024;
originally announced March 2024.
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Twenty-nine million Intrinsic Q-factor Monolithic Microresonators on Thin Film Lithium Niobate
Authors:
Xinrui Zhu,
Yaowen Hu,
Shengyuan Lu,
Hana K. Warner,
Xudong Li,
Yunxiang Song,
Leticia Magalhaes,
Amirhassan Shams-Ansari,
Neil Sinclair,
Marko Loncar
Abstract:
The recent emergence of thin-film lithium niobate (TFLN) has extended the landscape of integrated photonics. This has been enabled by the commercialization of TFLN wafers and advanced nanofabrication of TFLN such as high-quality dry etching. However, fabrication imperfections still limit the propagation loss to a few dB/m, restricting the impact of this platform. Here, we demonstrate TFLN microres…
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The recent emergence of thin-film lithium niobate (TFLN) has extended the landscape of integrated photonics. This has been enabled by the commercialization of TFLN wafers and advanced nanofabrication of TFLN such as high-quality dry etching. However, fabrication imperfections still limit the propagation loss to a few dB/m, restricting the impact of this platform. Here, we demonstrate TFLN microresonators with a record-high intrinsic quality (Q) factor of twenty-nine million, corresponding to an ultra-low propagation loss of 1.3 dB/m. We present spectral analysis and the statistical distribution of Q factors across different resonator geometries. Our work pushes the fabrication limits of TFLN photonics to achieve a Q factor within one order of magnitude of the material limit.
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Submitted 25 February, 2024;
originally announced February 2024.
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Hybrid Kerr-electro-optic frequency combs on thin-film lithium niobate
Authors:
Yunxiang Song,
Yaowen Hu,
Marko Lončar,
Kiyoul Yang
Abstract:
Optical frequency combs are indispensable links between the optical and microwave domains, enabling a wide range of applications including precision spectroscopy, ultrastable frequency generation, and timekee**. Chip-scale integration miniaturizes bulk implementations onto photonic chips, offering highly compact, stable, and power-efficient frequency comb sources. State of the art integrated fre…
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Optical frequency combs are indispensable links between the optical and microwave domains, enabling a wide range of applications including precision spectroscopy, ultrastable frequency generation, and timekee**. Chip-scale integration miniaturizes bulk implementations onto photonic chips, offering highly compact, stable, and power-efficient frequency comb sources. State of the art integrated frequency comb sources are based on resonantly-enhanced Kerr effect and, more recently, on electro-optic effect. While the former can routinely reach octave-spanning bandwidths and the latter feature microwave-rate spacings, achieving both in the same material platform has been challenging. Here, we leverage both strong Kerr nonlinearity and efficient electro-optic phase modulation available in the ultralow-loss thin-film lithium niobate photonic platform, to demonstrate a hybrid Kerr-electro-optic frequency comb with stabilized spacing. In our approach, a dissipative Kerr soliton is first generated, and then electro-optic division is used to realize a frequency comb with 2,589 comb lines spaced by 29.308 GHz and spanning 75.9 THz (588 nm) end-to-end. Further, we demonstrate electronic stabilization and control of the soliton spacing, naturally facilitated by our approach. The broadband, microwave-rate comb in this work overcomes the spacing-span tradeoff that exists in all integrated frequency comb sources, and paves the way towards chip-scale solutions for complex tasks such as laser spectroscopy covering multiple bands, micro- and millimeter-wave generation, and massively parallel optical communications.
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Submitted 18 February, 2024;
originally announced February 2024.
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High-Q Cavity Interface for Color Centers in Thin Film Diamond
Authors:
Sophie W. Ding,
Michael Haas,
Xinghan Guo,
Kazuhiro Kuruma,
Chang **,
Zixi Li,
David D. Awschalom,
Nazar Delegan,
F. Joseph Heremans,
Alex High,
Marko Loncar
Abstract:
Quantum information technology offers the potential to realize unprecedented computational resources via secure channels capable of distributing entanglement between quantum computers. Diamond, as a host to atom-like defects with optically-accessible spin qubits, is a leading platform to realize quantum memory nodes needed to extend the reach of quantum links. Photonic crystal (PhC) cavities enhan…
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Quantum information technology offers the potential to realize unprecedented computational resources via secure channels capable of distributing entanglement between quantum computers. Diamond, as a host to atom-like defects with optically-accessible spin qubits, is a leading platform to realize quantum memory nodes needed to extend the reach of quantum links. Photonic crystal (PhC) cavities enhance light-matter interaction and are essential ingredients of an efficient interface between spins and photons that are used to store and communicate quantum information respectively. Despite great effort, however, the realization of visible PhC cavities with high quality factor (Q) and design flexibility is challenging in diamond. Here, we demonstrate one- and two-dimensional PhC cavities fabricated in recently developed thin-film diamonds, featuring Q-factors of 1.8x10$^5$ and 1.6x10$^5$, respectively, the highest Qs for visible PhC cavities realized in any material. Importantly, our fabrication process is simple and high-yield, based on conventional planar fabrication techniques, in contrast to previous approaches that rely on complex undercut methods. We also demonstrate fiber-coupled 1D PhC cavities with high photon extraction efficiency, and optical coupling between a single SiV center and such a cavity at 4K achieving a Purcell factor of 13. The demonstrated diamond thin-film photonic platform will improve the performance and scalability of quantum nodes and expand the range of quantum technologies.
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Submitted 8 February, 2024;
originally announced February 2024.
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Nanophotonic Phased Array XY Hamiltonian Solver
Authors:
Michelle Chalupnik,
Anshuman Singh,
James Leatham,
Marko Loncar,
Moe Soltani
Abstract:
Solving large-scale computationally hard optimization problems using existing computers has hit a bottleneck. A promising alternative approach uses physics-based phenomena to naturally solve optimization problems wherein the physical phenomena evolves to its minimum energy. In this regard, photonics devices have shown promise as alternative optimization architectures, benefiting from high-speed, h…
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Solving large-scale computationally hard optimization problems using existing computers has hit a bottleneck. A promising alternative approach uses physics-based phenomena to naturally solve optimization problems wherein the physical phenomena evolves to its minimum energy. In this regard, photonics devices have shown promise as alternative optimization architectures, benefiting from high-speed, high-bandwidth and parallelism in the optical domain. Among photonic devices, programmable spatial light modulators (SLMs) have shown promise in solving large scale Ising model problems to which many computationally hard problems can be mapped. Despite much progress, existing SLMs for solving the Ising model and similar problems suffer from slow update rates and physical bulkiness. Here, we show that using a compact silicon photonic integrated circuit optical phased array (PIC-OPA) we can simulate an XY Hamiltonian, a generalized form of Ising Hamiltonian, where spins can vary continuously. In this nanophotonic XY Hamiltonian solver, the spins are implemented using analog phase shifters in the optical phased array. The far field intensity pattern of the PIC-OPA represents an all-to-all coupled XY Hamiltonian energy and can be optimized with the tunable phase-shifters allowing us to solve an all-to-all coupled XY model. Our results show the utility of PIC-OPAs as compact, low power, and high-speed solvers for nondeterministic polynomial (NP)-hard problems. The scalability of the silicon PIC-OPA and its compatibility with monolithic integration with CMOS electronics further promises the realization of a powerful hybrid photonic/electronic non-Von Neumann compute engine.
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Submitted 9 March, 2024; v1 submitted 2 February, 2024;
originally announced February 2024.
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Limitations in design and applications of ultra-small mode volume photonic crystals
Authors:
Rubaiya Emran,
Michelle Chalupnik,
Erik N. Knall,
Ralf Riedinger,
Cleaven Chia,
Marko Loncar
Abstract:
Ultra-small mode volume nanophotonic crystal cavities have been proposed as powerful tools for increasing coupling rates in cavity quantum electrodynamics systems. However, their adoption in quantum information applications remains elusive. In this work, we investigate possible reasons why, and analyze the impact of different low mode volume resonator design choices on their utility in quantum opt…
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Ultra-small mode volume nanophotonic crystal cavities have been proposed as powerful tools for increasing coupling rates in cavity quantum electrodynamics systems. However, their adoption in quantum information applications remains elusive. In this work, we investigate possible reasons why, and analyze the impact of different low mode volume resonator design choices on their utility in quantum optics experiments. We analyze band structure features and loss rates of low mode volume bowtie cavities in diamond and demonstrate independent design control over cavity-emitter coupling strength and loss rates. Further, using silicon vacancy centers in diamond as exemplary emitters, we investigate the influence of placement imprecision. We find that the benefit on photon collection efficiency and indistinguishability is limited, while the fabrication complexity of ultra-small cavity designs increases substantially compared to conventional photonic crystals. We conclude that ultra-small mode volume designs are primarily of interest for dispersive spin-photon interactions, which are of great interest for future quantum networks.
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Submitted 16 April, 2024; v1 submitted 1 February, 2024;
originally announced February 2024.
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Integrated resonant electro-optic comb enabled by platform-agnostic laser integration
Authors:
Isaac Luntadila Lufungula,
Amirhassan Shams-Ansari,
Dylan Renaud,
Camiel Op de Beeck,
Stijn Cuyvers,
Stijn Poelman,
Maximilien Billet,
Gunther Roelkens,
Marko Loncar,
Bart Kuyken
Abstract:
The field of integrated photonics has significantly impacted numerous fields including communication, sensing, and quantum physics owing to the efficiency, speed, and compactness of its devices. However, the reliance on off-chip bulk lasers compromises the compact nature of these systems. While silicon photonics and III-V platforms have established integrated laser technologies, emerging demands f…
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The field of integrated photonics has significantly impacted numerous fields including communication, sensing, and quantum physics owing to the efficiency, speed, and compactness of its devices. However, the reliance on off-chip bulk lasers compromises the compact nature of these systems. While silicon photonics and III-V platforms have established integrated laser technologies, emerging demands for ultra-low optical loss, wider bandgaps, and optical nonlinearities necessitate other platforms. Develo** integrated lasers on less mature platforms is arduous and costly due to limited throughput or unconventional process requirements. In response, we propose a novel platform-agnostic laser integration technique utilizing a singular design and process flow, applicable without modification to a diverse range of platforms. Leveraging a two-step micro-transfer printing method, we achieve nearly identical laser performance across platforms with refractive indices between 1.7 and 2.5. Experimental validation demonstrates strikingly similar laser characteristics between devices processed on lithium niobate and silicon nitride platforms. Furthermore, we showcase the integration of a laser with a resonant electro-optic comb generator on the thin-film lithium niobate platform, producing over 80 comb lines spanning 12 nm. This versatile technique transcends platform-specific limitations, facilitating applications like microwave photonics, handheld spectrometers, and cost-effective Lidar systems, across multiple platforms.
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Submitted 8 February, 2024; v1 submitted 29 January, 2024;
originally announced January 2024.
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Cavity-enhanced narrowband spectral filters using rare-earth ions doped in thin-film lithium niobate
Authors:
Yuqi Zhao,
Dylan Renaud,
Demitry Farfurnik,
Yuxi Jiang,
Subhojit Dutta,
Neil Sinclair,
Marko Loncar,
Edo Waks
Abstract:
On-chip optical filters are fundamental components in optical signal processing. While rare-earth ion-doped crystals offer ultra-narrow optical filtering via spectral hole burning, their applications have primarily been limited to those using bulk crystals, restricting their utility. In this work, we demonstrate cavity-enhanced spectral filtering based on rare-earth ions in an integrated nonlinear…
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On-chip optical filters are fundamental components in optical signal processing. While rare-earth ion-doped crystals offer ultra-narrow optical filtering via spectral hole burning, their applications have primarily been limited to those using bulk crystals, restricting their utility. In this work, we demonstrate cavity-enhanced spectral filtering based on rare-earth ions in an integrated nonlinear optical platform. We incorporate rare-earth ions into high quality-factor ring resonators patterned in thin-film lithium niobate. By spectral hole burning at 4K in a critically coupled resonance mode, we achieve bandpass filters ranging from 7 MHz linewidth, with 13.0 dB of extinction, to 24 MHz linewidth, with 20.4 dB of extinction. By reducing the temperature to 100 mK to eliminate phonon broadening, we achieve an even narrower linewidth of 681 kHz, which is comparable to the narrowest filter linewidth demonstrated in an integrated photonic device, while only requiring a small device footprint. Moreover, the cavity enables reconfigurable filtering by varying the cavity coupling rate. For instance, as opposed to the bandpass filter, we demonstrate a bandstop filter utilizing an under-coupled ring resonator. Such versatile integrated spectral filters with high extinction ratio and narrow linewidth could serve as fundamental components for optical signal processing and optical memories on-a-chip.
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Submitted 30 May, 2024; v1 submitted 17 January, 2024;
originally announced January 2024.
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On-Chip Backward Stimulated Brillouin Scattering in Lithium Niobate Waveguides
Authors:
Caique C. Rodrigues,
Nick J. Schilder,
Roberto O. Zurita,
Letícia S. Magalhães,
Amirhassan Shams-Ansari,
Thiago P. M. Alegre,
Marko Lončar,
Gustavo S. Wiederhecker
Abstract:
We report on the first experimental demonstration of backward stimulated Brillouin scattering (SBS) in Lithium Niobate on Insulator (LNOI) waveguides. Performing polarization-dependent pump-probe experiments, we successfully quantified both intramodal and intermodal scattering among fundamental modes, showcasing substantial gains up to $G_{B}=$10m$^{-1}$W$^{-1}$. Such large gains on simple wavegui…
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We report on the first experimental demonstration of backward stimulated Brillouin scattering (SBS) in Lithium Niobate on Insulator (LNOI) waveguides. Performing polarization-dependent pump-probe experiments, we successfully quantified both intramodal and intermodal scattering among fundamental modes, showcasing substantial gains up to $G_{B}=$10m$^{-1}$W$^{-1}$. Such large gains on simple waveguides open a pathway for unlocking novel opto-electro-mechanical phenomena within the LNOI platform.
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Submitted 29 November, 2023;
originally announced November 2023.
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High Q-factor diamond optomechanical resonators with silicon vacancy centers at millikelvin temperatures
Authors:
Graham D. Joe,
Cleaven Chia,
Benjamin **ault,
Michael Haas,
Michelle Chalupnik,
Eliza Cornell,
Kazuhiro Kuruma,
Bartholomeus Machielse,
Neil Sinclair,
Srujan Meesala,
Marko Lončar
Abstract:
Phonons are envisioned as coherent intermediaries between different types of quantum systems. Engineered nanoscale devices such as optomechanical crystals (OMCs) provide a platform to utilize phonons as quantum information carriers. Here we demonstrate OMCs in diamond designed for strong interactions between phonons and a silicon vacancy (SiV) spin. Using optical measurements at millikelvin temper…
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Phonons are envisioned as coherent intermediaries between different types of quantum systems. Engineered nanoscale devices such as optomechanical crystals (OMCs) provide a platform to utilize phonons as quantum information carriers. Here we demonstrate OMCs in diamond designed for strong interactions between phonons and a silicon vacancy (SiV) spin. Using optical measurements at millikelvin temperatures, we measure a linewidth of 13 kHz (Q-factor of ~440,000) for 6 GHz acoustic modes, a record for diamond in the GHz frequency range and within an order of magnitude of state-of-the-art linewidths for OMCs in silicon. We investigate SiV optical and spin properties in these devices and outline a path towards a coherent spin-phonon interface.
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Submitted 28 October, 2023;
originally announced October 2023.
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Engineering Phonon-Qubit Interactions using Phononic Crystals
Authors:
Kazuhiro Kuruma,
Benjamin **ault,
Cleaven Chia,
Michael Haas,
Graham D Joe,
Daniel Rimoli Assumpcao,
Sophie Weiyi Ding,
Chang **,
C. J. Xin,
Matthew Yeh,
Neil Sinclair,
Marko Lončar
Abstract:
The ability to control phonons in solids is key for diverse quantum applications, ranging from quantum information processing to sensing. Often, phonons are sources of noise and decoherence, since they can interact with a variety of solid-state quantum systems. To mitigate this, quantum systems typically operate at milli-Kelvin temperatures to reduce the number of thermal phonons. Here we demonstr…
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The ability to control phonons in solids is key for diverse quantum applications, ranging from quantum information processing to sensing. Often, phonons are sources of noise and decoherence, since they can interact with a variety of solid-state quantum systems. To mitigate this, quantum systems typically operate at milli-Kelvin temperatures to reduce the number of thermal phonons. Here we demonstrate an alternative approach that relies on engineering phononic density of states, drawing inspiration from photonic bandgap structures that have been used to control the spontaneous emission of quantum emitters. We design and fabricate diamond phononic crystals with a complete phononic bandgap spanning 50 - 70 gigahertz, tailored to suppress interactions of a single silicon-vacancy color center with resonant phonons of the thermal bath. At 4 Kelvin, we demonstrate a reduction of the phonon-induced orbital relaxation rate of the color center by a factor of 18 compared to bulk. Furthermore, we show that the phononic bandgap can efficiently suppress phonon-color center interactions up to 20 Kelvin. In addition to enabling operation of quantum memories at higher temperatures, the ability to engineer qubit-phonon interactions may enable new functionalities for quantum science and technology, where phonons are used as carriers of quantum information.
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Submitted 9 October, 2023;
originally announced October 2023.
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Integrated Phononic Waveguides in Diamond
Authors:
Sophie Weiyi Ding,
Benjamin **ault,
Linbo Shao,
Neil Sinclair,
Bartholomeus Machielse,
Cleaven Chia,
Smarak Maity,
Marko Lončar
Abstract:
Efficient generation, guiding, and detection of phonons, or mechanical vibrations, are of interest in various fields including radio frequency communication, sensing, and quantum information. Diamond is an important platform for phononics because of the presence of strain-sensitive spin qubits, and its high Young's modulus which allows for low-loss gigahertz devices. We demonstrate a diamond phono…
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Efficient generation, guiding, and detection of phonons, or mechanical vibrations, are of interest in various fields including radio frequency communication, sensing, and quantum information. Diamond is an important platform for phononics because of the presence of strain-sensitive spin qubits, and its high Young's modulus which allows for low-loss gigahertz devices. We demonstrate a diamond phononic waveguide platform for generating, guiding, and detecting gigahertz-frequency surface acoustic wave (SAW) phonons. We generate SAWs using interdigital transducers integrated on AlN/diamond and observe SAW transmission at 4-5 GHz through both ridge and suspended waveguides, with wavelength-scale cross sections (~1 μm2) to maximize spin-phonon interaction. This work is a crucial step for develo** acoustic components for quantum phononic circuits with strain-sensitive color centers in diamond.
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Submitted 15 September, 2023;
originally announced September 2023.
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Deterministic Creation of Strained Color Centers in Nanostructures via High-Stress Thin Films
Authors:
Daniel R. Assumpcao,
Chang **,
Madison Sutula,
Sophie W. Ding,
Phong Pham,
Can M. Knaut,
Mihir K. Bhaskar,
Abishrant Panday,
Aaron M. Day,
Dylan Renaud,
Mikhail D. Lukin,
Evelyn Hu,
Bartholomeus Machielse,
Marko Loncar
Abstract:
Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the characteristics of individual color-centers are often strain dependent. As an illustrative case, the silicon-vacancy center in diamond typically requires millikelvin temperatures in order to achieve long coherence proper…
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Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the characteristics of individual color-centers are often strain dependent. As an illustrative case, the silicon-vacancy center in diamond typically requires millikelvin temperatures in order to achieve long coherence properties, but strained silicon vacancy centers have been shown to operate at temperatures beyond 1K without phonon-mediated decoherence. In this work we combine high-stress silicon nitride thin films with diamond nanostructures in order to reproducibly create statically strained silicon-vacancy color centers (mean ground state splitting of 608 GHz) with strain magnitudes of $\sim 4 \times 10^{-4}$. Based on modeling, this strain should be sufficient to allow for operation of a majority silicon-vacancy centers within the measured sample at elevated temperatures (1.5K) without any degradation of their spin properties. This method offers a scalable approach to fabricate high-temperature operation quantum memories. Beyond silicon-vacancy centers, this method is sufficiently general that it can be easily extended to other platforms as well.
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Submitted 4 November, 2023; v1 submitted 13 September, 2023;
originally announced September 2023.
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Development of a Boston-area 50-km fiber quantum network testbed
Authors:
Eric Bersin,
Matthew Grein,
Madison Sutula,
Ryan Murphy,
Yan Qi Huan,
Mark Stevens,
Aziza Suleymanzade,
Catherine Lee,
Ralf Riedinger,
David J. Starling,
Pieter-Jan Stas,
Can M. Knaut,
Neil Sinclair,
Daniel R. Assumpcao,
Yan-Cheng Wei,
Erik N. Knall,
Bartholomeus Machielse,
Denis D. Sukachev,
David S. Levonian,
Mihir K. Bhaskar,
Marko Lončar,
Scott Hamilton,
Mikhail Lukin,
Dirk Englund,
P. Benjamin Dixon
Abstract:
Distributing quantum information between remote systems will necessitate the integration of emerging quantum components with existing communication infrastructure. This requires understanding the channel-induced degradations of the transmitted quantum signals, beyond the typical characterization methods for classical communication systems. Here we report on a comprehensive characterization of a Bo…
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Distributing quantum information between remote systems will necessitate the integration of emerging quantum components with existing communication infrastructure. This requires understanding the channel-induced degradations of the transmitted quantum signals, beyond the typical characterization methods for classical communication systems. Here we report on a comprehensive characterization of a Boston-Area Quantum Network (BARQNET) telecom fiber testbed, measuring the time-of-flight, polarization, and phase noise imparted on transmitted signals. We further design and demonstrate a compensation system that is both resilient to these noise sources and compatible with integration of emerging quantum memory components on the deployed link. These results have utility for future work on the BARQNET as well as other quantum network testbeds in development, enabling near-term quantum networking demonstrations and informing what areas of technology development will be most impactful in advancing future system capabilities.
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Submitted 5 January, 2024; v1 submitted 28 July, 2023;
originally announced July 2023.
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Telecom networking with a diamond quantum memory
Authors:
Eric Bersin,
Madison Sutula,
Yan Qi Huan,
Aziza Suleymanzade,
Daniel R. Assumpcao,
Yan-Cheng Wei,
Pieter-Jan Stas,
Can M. Knaut,
Erik N. Knall,
Carsten Langrock,
Neil Sinclair,
Ryan Murphy,
Ralf Riedinger,
Matthew Yeh,
C. J. Xin,
Saumil Bandyopadhyay,
Denis D. Sukachev,
Bartholomeus Machielse,
David S. Levonian,
Mihir K. Bhaskar,
Scott Hamilton,
Hongkun Park,
Marko Lončar,
Martin M. Fejer,
P. Benjamin Dixon
, et al. (2 additional authors not shown)
Abstract:
Practical quantum networks require interfacing quantum memories with existing channels and systems that operate in the telecom band. Here we demonstrate low-noise, bidirectional quantum frequency conversion that enables a solid-state quantum memory to directly interface with telecom-band systems. In particular, we demonstrate conversion of visible-band single photons emitted from a silicon-vacancy…
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Practical quantum networks require interfacing quantum memories with existing channels and systems that operate in the telecom band. Here we demonstrate low-noise, bidirectional quantum frequency conversion that enables a solid-state quantum memory to directly interface with telecom-band systems. In particular, we demonstrate conversion of visible-band single photons emitted from a silicon-vacancy (SiV) center in diamond to the telecom O-band, maintaining low noise ($g^2(0)<0.1$) and high indistinguishability ($V=89\pm8\%$). We further demonstrate the utility of this system for quantum networking by converting telecom-band time-bin pulses, sent across a lossy and noisy 50 km deployed fiber link, to the visible band and map** their quantum states onto a diamond quantum memory with fidelity $\mathcal{F}=87\pm 2.5 \% $. These results demonstrate the viability of SiV quantum memories integrated with telecom-band systems for scalable quantum networking applications.
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Submitted 17 July, 2023;
originally announced July 2023.
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Cryogenic packaging of nanophotonic devices with a low coupling loss < 1 dB
Authors:
Beibei Zeng,
Chawina De-Eknamkul,
Daniel Assumpcao,
Dylan Renaud,
Zhuoxian Wang,
Daniel Riedel,
Jeonghoon Ha,
Carsten Robens,
David Levonian,
Mikhail Lukin,
Ralf Riedinger,
Mihir Bhaskar,
Denis Sukachev,
Marko Loncar,
Bart Machielse
Abstract:
Robust, low-loss photonic packaging of on-chip nanophotonic circuits is a key enabling technology for the deployment of integrated photonics in a variety of classical and quantum technologies including optical communications and quantum communications, sensing, and transduction. To date, no process has been established that enables permanent, broadband, and cryogenically-compatible coupling with s…
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Robust, low-loss photonic packaging of on-chip nanophotonic circuits is a key enabling technology for the deployment of integrated photonics in a variety of classical and quantum technologies including optical communications and quantum communications, sensing, and transduction. To date, no process has been established that enables permanent, broadband, and cryogenically-compatible coupling with sub-dB losses from optical fibers to nanophotonic circuits. Here we report a technique for reproducibly generating a permanently packaged interface between a tapered optical fiber and nanophotonic devices with a record-low coupling loss < 1 dB per facet at near-infrared wavelengths (~730 nm) that remains stable from 300 K to 30 mK. We further demonstrate the compatibility of this technique with etched lithium niobate on insulator waveguides. The technique lifts performance limitations imposed by scattering as light transfers between photonic devices and optical fibers, paving the way for scalable integration of photonic technologies at both room and cryogenic temperatures.
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Submitted 10 August, 2023; v1 submitted 16 June, 2023;
originally announced June 2023.
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Frequency comb generation via synchronous pumped $χ^{(3)}$ resonator on thin-film lithium niobate
Authors:
Rebecca Cheng,
Mengjie Yu,
Amirhassan Shams-Ansari,
Yaowen Hu,
Christian Reimer,
Mian Zhang,
Marko Lončar
Abstract:
Resonator-based optical frequency comb generation is an enabling technology for a myriad of applications ranging from communications to precision spectroscopy. These frequency combs can be generated in nonlinear resonators driven using either continuous-wave (CW) light, which requires alignment of the pump frequency with the cavity resonance, or pulsed light, which also mandates that the pulse rep…
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Resonator-based optical frequency comb generation is an enabling technology for a myriad of applications ranging from communications to precision spectroscopy. These frequency combs can be generated in nonlinear resonators driven using either continuous-wave (CW) light, which requires alignment of the pump frequency with the cavity resonance, or pulsed light, which also mandates that the pulse repetition rate and cavity free spectral range (FSR) are carefully matched. Advancements in nanophotonics have ignited interest in chip-scale optical frequency combs. However, realizing pulse-driven on-chip Kerr combs remains challenging, as microresonator cavities have limited tuning range in their FSR and resonance frequency. Here, we take steps to overcome this limitation and demonstrate broadband frequency comb generation using a $χ^{(3)}$ resonator synchronously pumped by a tunable femtosecond pulse generator with on-chip amplitude and phase modulators. Notably, employing pulsed pum** overcomes limitations in Kerr comb generation typically seen in crystalline resonators from stimulated Raman scattering.
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Submitted 25 April, 2024; v1 submitted 25 April, 2023;
originally announced April 2023.
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Scalable and ultralow power silicon photonic two-dimensional phased array
Authors:
Michelle Chalupnik,
Anshuman Singh,
James Leatham,
Marko Loncar,
Moe Soltani
Abstract:
Photonic integrated circuit based optical phased arrays (PIC-OPA) are emerging as promising programmable processors and spatial light modulators, combining the best of planar and free-space optics. Their implementation in silicon photonic platforms has been especially fruitful. Despite much progress in this field, demonstrating steerable two-dimensional (2D) OPAs scalable to a large number of arra…
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Photonic integrated circuit based optical phased arrays (PIC-OPA) are emerging as promising programmable processors and spatial light modulators, combining the best of planar and free-space optics. Their implementation in silicon photonic platforms has been especially fruitful. Despite much progress in this field, demonstrating steerable two-dimensional (2D) OPAs scalable to a large number of array elements and operating with a single wavelength has proven a challenge. In addition, the phase shifters used in the array for programming the far field beam are either power hungry or have a large footprint, preventing implementation of large scale 2D arrays. Here, we demonstrate a two-dimensional silicon photonic phased array with high-speed (~330 KHz) and ultralow power microresonator phase-shifters with a compact radius (~3 μm) and 2π phase shift ability. Each phase-shifter consumes an average ~250 μW static power for resonance alignment and ~50 μW power for far field beamforming. Such PIC-OPA devices can enable a new generation of compact and scalable low power processors and sensors.
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Submitted 23 January, 2023;
originally announced January 2023.
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Integrated Electro-Optic Isolator on Thin Film Lithium Niobate
Authors:
Mengjie Yu,
Rebecca Cheng,
Christian Reimer,
Lingyan He,
Kevin Luke,
Eric Puma,
Linbo Shao,
Amirhassan Shams-Ansari,
Hannah R. Grant,
Leif Johansson,
Mian Zhang,
Marko Lončar
Abstract:
Optical isolator is an indispensable component of almost any optical system and is used to protect a laser from unwanted reflections for phase-stable coherent operation. The development of chip-scale optical systems, powered by semiconductor lasers integrated on the same chip, has resulted in a need for a fully integrated optical isolator. However, conventional approaches based on application of m…
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Optical isolator is an indispensable component of almost any optical system and is used to protect a laser from unwanted reflections for phase-stable coherent operation. The development of chip-scale optical systems, powered by semiconductor lasers integrated on the same chip, has resulted in a need for a fully integrated optical isolator. However, conventional approaches based on application of magneto-optic materials to break the reciprocity and provide required isolation have significant challenges in terms of material processing and insertion loss. As a result, many magnetic-free approaches have been explored, including acousto-optics, optical nonlinearity, and electro-optics. However, to date, the realization of an integrated isolator with low insertion loss, high isolation ratio, broad bandwidth, and low power consumption on a monolithic material platform is still absent. Here we realize non-reciprocal traveling-wave EO-based isolator on thin-film LN, enabling maximum optical isolation of 48 dB and an on-chip insertion loss of 0.5 dB using a single-frequency microwave drive at 21-dBm RF power. The isolation ratio is verified to be larger than 37 dB across a tunable optical wavelength range from 1510 to 1630 nm. We verify that our hybrid DFB laser - LN isolator module successfully protects the single-mode operation and the linewidth of the DFB laser from reflection. Our result is a significant step towards a practical high-performance optical isolator on chip.
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Submitted 4 December, 2022;
originally announced December 2022.
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Sub-1 Volt and High-Bandwidth Visible to Near-Infrared Electro-Optic Modulators
Authors:
Dylan Renaud,
Daniel Rimoli Assumpcao,
Graham Joe,
Amirhassan Shams-Ansari,
Di Zhu,
Yaowen Hu,
Neil Sinclair,
Marko Loncar
Abstract:
Integrated electro-optic (EO) modulators are fundamental photonics components with utility in domains ranging from digital communications to quantum information processing. At telecommunication wavelengths, thin-film lithium niobate modulators exhibit state-of-the-art performance in voltage-length product ($V_π$L), optical loss, and EO bandwidth. However, applications in optical imaging, optogenet…
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Integrated electro-optic (EO) modulators are fundamental photonics components with utility in domains ranging from digital communications to quantum information processing. At telecommunication wavelengths, thin-film lithium niobate modulators exhibit state-of-the-art performance in voltage-length product ($V_π$L), optical loss, and EO bandwidth. However, applications in optical imaging, optogenetics, and quantum science generally require devices operating in the visible-to-near-infrared (VNIR) wavelength range. In this work, we realize VNIR amplitude and phase modulators featuring $V_π$L's of sub-1 V$\cdot\,$cm, low optical loss, and high bandwidth EO response. Our Mach-Zehnder modulators exhibit a $V_π$L as low as 0.55 V$\cdot\,$cm at 738 nm, and EO bandwidths in excess of 35 GHz. Furthermore, we highlight the new opportunities these high-performance modulators offer by demonstrating the first integrated EO frequency combs at VNIR wavelengths, with over 50 lines and tunable spacing, and the first frequency shifting of pulsed light beyond its intrinsic bandwidth (up to 7x Fourier limit) by an EO shearing method.
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Submitted 8 February, 2023; v1 submitted 24 October, 2022;
originally announced October 2022.
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Systematic Investigation of Millimeter-Wave Optic Modulation Performance in Thin-Film Lithium Niobate
Authors:
Yiwen Zhang,
Linbo Shao,
**gwei Yang,
Zhaoxi Chen,
Ke Zhang,
Kam-Man Shum,
Di Zhu,
Chi Hou Chan,
Marko Lončar,
Cheng Wang
Abstract:
Millimeter-wave (mmWave) band (30 - 300 GHz) is an emerging spectrum range for wireless communication, short-range radar and sensor applications. mmWave-optic modulators that could efficiently convert mmWave signals into optical domain are crucial components for long-haul transmission of mmWave signals through optical networks. At these ultrahigh frequencies, however, the modulation performances a…
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Millimeter-wave (mmWave) band (30 - 300 GHz) is an emerging spectrum range for wireless communication, short-range radar and sensor applications. mmWave-optic modulators that could efficiently convert mmWave signals into optical domain are crucial components for long-haul transmission of mmWave signals through optical networks. At these ultrahigh frequencies, however, the modulation performances are highly sensitive to the transmission line loss as well as the velocity- and impedance-matching conditions, while precise measurements and modeling of these parameters are often non-trivial. Here we present a systematic investigation of the mmWave-optic modulation performances of thin-film lithium niobate modulators through theoretical modeling, electrical verifications and electro-optic measurements at frequencies up to 325 GHz. Based on our experimentally verified model, we demonstrate thin-film lithium niobate mmWave-optic modulators with a measured 3-dB electro-optic bandwidth of 170 GHz and a 6-dB bandwidth of 295 GHz. The device also shows a low RF half-wave voltage of 7.3 V measured at an ultrahigh modulation frequency of 250 GHz. This work provides a comprehensive guideline for the design and characterization of mmWave-optic modulators and paves the way toward future integrated mmWave photonic systems for beyond-5G communication and radar applications.
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Submitted 5 July, 2022; v1 submitted 28 June, 2022;
originally announced June 2022.
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Terahertz waveform synthesis from integrated lithium niobate circuits
Authors:
Alexa Herter,
Amirhassan Shams-Ansari,
Francesca Fabiana Settembrini,
Hana K. Warner,
Jérôme Faist,
Marko Lončar,
Ileana-Cristina Benea-Chelmus
Abstract:
Bridging the "terahertz (THz) gap" relies upon synthesizing arbitrary waveforms in the THz domain enabling applications that require both narrow band sources for sensing and few-cycle drives for classical and quantum objects. However, realization of custom-tailored waveforms needed for these applications is currently hindered due to limited flexibility for optical rectification of femtosecond puls…
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Bridging the "terahertz (THz) gap" relies upon synthesizing arbitrary waveforms in the THz domain enabling applications that require both narrow band sources for sensing and few-cycle drives for classical and quantum objects. However, realization of custom-tailored waveforms needed for these applications is currently hindered due to limited flexibility for optical rectification of femtosecond pulses in bulk crystals. Here, we experimentally demonstrate that thin-film lithium niobate (TFLN) circuits provide a versatile solution for such waveform synthesis through combining the merits of complex integrated architectures, low-loss distribution of pump pulses on-chip, and an efficient optical rectification. Our distributed pulse phase-matching scheme grants sha** the temporal, spectral, phase, amplitude, and farfield characteristics of the emitted THz field through designer on-chip components. This strictly circumvents prior limitations caused by the phase-delay mismatch in conventional systems and relaxes the requirement for cumbersome spectral pre-engineering of the pum** light. We provide a toolbox of basic blocks that produce broadband emission up to 680 GHz with adaptable phase and coherence properties by using near-infrared pump pulse energies below 100 pJ.
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Submitted 25 April, 2022;
originally announced April 2022.
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Reduced Material Loss in Thin-film Lithium Niobate Waveguides
Authors:
Amirhassan Shams-Ansari,
Guanhao Huang,
Lingyan He,
Zihan Li,
Jeffrey Holzgrafe,
Marc Jankowski,
Mikhail Churaev,
Prashanta Kharel,
Rebecca Cheng,
Di Zhu,
Neil Sinclair,
Boris Desiatov,
Mian Zhang,
Tobias J. Kippenberg,
Marko Loncar
Abstract:
Thin-film lithium niobate has shown promise for scalable applications ranging from single-photon sources to high-bandwidth data communication systems. Realization of the next generation high-performance classical and quantum devices, however, requires much lower optical losses than the current state of the art ($\sim$10 million). Unfortunately, material limitations of ion-sliced thin-film lithium…
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Thin-film lithium niobate has shown promise for scalable applications ranging from single-photon sources to high-bandwidth data communication systems. Realization of the next generation high-performance classical and quantum devices, however, requires much lower optical losses than the current state of the art ($\sim$10 million). Unfortunately, material limitations of ion-sliced thin-film lithium niobate have not been explored, and therefore it is unclear how high-quality factor can be achieved in this platform. Here we evaluate the material limited quality factor of thin-film lithium niobate photonic platform can be as high as $Q\approx 1.8\times10^{8}$ at telecommunication wavelengths, corresponding to a propagation loss of 0.2 dB/m.
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Submitted 31 March, 2022;
originally announced March 2022.
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Mirror-induced reflection in the frequency domain
Authors:
Yaowen Hu,
Mengjie Yu,
Neil Sinclair,
Di Zhu,
Rebecca Cheng,
Cheng Wang,
Marko Loncar
Abstract:
Mirrors are ubiquitous in optics and are used to control the propagation of optical signals in space. Here we propose and demonstrate frequency domain mirrors that provide reflections of the optical energy in a frequency synthetic dimension, using electro-optic modulation. First, we theoretically explore the concept of frequency mirrors with the investigation of propagation loss, and reflectivity…
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Mirrors are ubiquitous in optics and are used to control the propagation of optical signals in space. Here we propose and demonstrate frequency domain mirrors that provide reflections of the optical energy in a frequency synthetic dimension, using electro-optic modulation. First, we theoretically explore the concept of frequency mirrors with the investigation of propagation loss, and reflectivity in the frequency domain. Next, we explore the mirror formed through polarization mode-splitting in a thin-film lithium niobate micro-resonator. By exciting the Bloch waves of the synthetic frequency crystal with different wave vectors, we show various states formed by the interference between forward propagating and reflected waves. Finally, we expand on this idea, and generate tunable frequency mirrors as well as demonstrate trapped states formed by these mirrors using coupled lithium niobate micro-resonators. The ability to control the flow of light in the frequency domain could enable a wide range of applications, including the study of random walks, boson sampling, frequency comb sources, optical computation, and topological photonics. Furthermore, demonstration of optical elements such as cavities, lasers, and photonic crystals in the frequency domain, may be possible.
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Submitted 31 March, 2022;
originally announced March 2022.
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Thermal Modulation of Gigahertz Surface Acoustic Waves on Lithium Niobate
Authors:
Linbo Shao,
Sophie W. Ding,
Yunwei Ma,
Yuhao Zhang,
Neil Sinclair,
Marko Loncar
Abstract:
Surface acoustic wave (SAW) devices have wide range of applications in microwave signal processing. Microwave SAW components benefit from higher quality factors and much smaller crosstalk when compared to their electromagnetic counterparts. Efficient routing and modulation of SAWs are essential for building large-scale and versatile acoustic-wave circuits. Here, we demonstrate integrated thermo-ac…
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Surface acoustic wave (SAW) devices have wide range of applications in microwave signal processing. Microwave SAW components benefit from higher quality factors and much smaller crosstalk when compared to their electromagnetic counterparts. Efficient routing and modulation of SAWs are essential for building large-scale and versatile acoustic-wave circuits. Here, we demonstrate integrated thermo-acoustic modulators using two SAW platforms: bulk lithium niobate and thin-film lithium niobate on sapphire. In both approaches, the gigahertz-frequency SAWs are routed by integrated acoustic waveguides while on-chip microheaters are used to locally change the temperature and thus control the phase of SAW. Using this approach, we achieved phase changes of over 720 degrees with the responsibility of 2.6 deg/mW for bulk lithium niobate and 0.52 deg/mW for lithium niobate on sapphire. Furthermore, we demonstrated amplitude modulation of SAWs using acoustic Mach Zehnder interferometers. Our thermo-acoustic modulators can enable reconfigurable acoustic signal processing for next generation wireless communications and microwave systems.
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Submitted 27 October, 2022; v1 submitted 29 March, 2022;
originally announced March 2022.
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Spectrally separable photon-pair generation in dispersion engineered thin-film lithium niobate
Authors:
C. J. Xin,
Jatadhari Mishra,
Changchen Chen,
Di Zhu,
Amirhassan Shams-Ansari,
Carsten Langrock,
Neil Sinclair,
Franco N. C. Wong,
M. M. Fejer,
Marko Lončar
Abstract:
Existing nonlinear-optic implementations of pure, unfiltered heralded single-photon sources do not offer the scalability required for densely integrated quantum networks. Additionally, lithium niobate has hitherto been unsuitable for such use due to its material dispersion. We engineer the dispersion and the quasi-phasematching conditions of a waveguide in the rapidly emerging thin-film lithium ni…
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Existing nonlinear-optic implementations of pure, unfiltered heralded single-photon sources do not offer the scalability required for densely integrated quantum networks. Additionally, lithium niobate has hitherto been unsuitable for such use due to its material dispersion. We engineer the dispersion and the quasi-phasematching conditions of a waveguide in the rapidly emerging thin-film lithium niobate platform to generate spectrally separable photon pairs in the telecommunications band. Such photon pairs can be used as spectrally pure heralded single-photon sources in quantum networks. We estimate a heralded-state spectral purity of ${>}94\%$ based on joint spectral intensity measurements. Further, a joint spectral phase-sensitive measurement of the unheralded time-integrated second-order correlation function yields a heralded-state purity of $(86 \pm 5)\%$.
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Submitted 27 May, 2022; v1 submitted 24 February, 2022;
originally announced February 2022.
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Development of hard masks for reactive ion beam angled etching of diamond
Authors:
Cleaven Chia,
Bartholomeus Machielse,
Amirhassan Shams-Ansari,
Marko Loncar
Abstract:
Diamond offers good optical properties and hosts bright color centers with long spin coherence times. Recent advances in angled-etching of diamond, specifically with reactive ion beam angled etching (RIBAE), have led to successful demonstration of quantum photonic devices operating at visible wavelengths. However, larger devices operating at telecommunication wavelengths have been difficult to fab…
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Diamond offers good optical properties and hosts bright color centers with long spin coherence times. Recent advances in angled-etching of diamond, specifically with reactive ion beam angled etching (RIBAE), have led to successful demonstration of quantum photonic devices operating at visible wavelengths. However, larger devices operating at telecommunication wavelengths have been difficult to fabricate due to the increased mask erosion, arising from the increased size of devices requiring longer etch times. We evaluated different mask materials for RIBAE of diamond photonic crystal nanobeams and waveguides, and how their thickness, selectivity, aspect ratio and sidewall smoothness affected the resultant etch profiles and optical performance. We found that a thick hydrogen silesquioxane (HSQ) layer on a thin alumina adhesion layer provided the best etch profile and optical performance. The techniques explored in this work can also be adapted to other bulk materials that are not available heteroepitaxially or as thin films-on-insulator.
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Submitted 20 April, 2022; v1 submitted 17 January, 2022;
originally announced January 2022.
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Efficient Source of Shaped Single Photons Based on an Integrated Diamond Nanophotonic System
Authors:
Erik N. Knall,
Can M. Knaut,
Rivka Bekenstein,
Daniel R. Assumpcao,
Pavel L. Stroganov,
Wenjie Gong,
Yan Qi Huan,
Pieter-Jan Stas,
Bartholomeus Machielse,
Michelle Chalupnik,
David Levonian,
Aziza Suleymanzade,
Ralf Riedinger,
Hongkun Park,
Marko Lončar,
Mihir K. Bhaskar,
Mikhail D. Lukin
Abstract:
An efficient, scalable source of shaped single photons that can be directly integrated with optical fiber networks and quantum memories is at the heart of many protocols in quantum information science. We demonstrate a deterministic source of arbitrarily temporally shaped single-photon pulses with high efficiency (detection efficiency = 14.9%) and purity ($g^{(2)}(0) = 0.0168$) and streams of up t…
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An efficient, scalable source of shaped single photons that can be directly integrated with optical fiber networks and quantum memories is at the heart of many protocols in quantum information science. We demonstrate a deterministic source of arbitrarily temporally shaped single-photon pulses with high efficiency (detection efficiency = 14.9%) and purity ($g^{(2)}(0) = 0.0168$) and streams of up to 11 consecutively detected single photons using a silicon-vacancy center in a highly directional fiber-integrated diamond nanophotonic cavity. Combined with previously demonstrated spin-photon entangling gates, this system enables on-demand generation of streams of correlated photons such as cluster states and could be used as a resource for robust transmission and processing of quantum information.
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Submitted 28 July, 2022; v1 submitted 7 January, 2022;
originally announced January 2022.
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Spectral control of nonclassical light using an integrated thin-film lithium niobate modulator
Authors:
Di Zhu,
Changchen Chen,
Mengjie Yu,
Linbo Shao,
Yaowen Hu,
C. J. Xin,
Matthew Yeh,
Soumya Ghosh,
Lingyan He,
Christian Reimer,
Neil Sinclair,
Franco N. C. Wong,
Mian Zhang,
Marko Lončar
Abstract:
Manipulating the frequency and bandwidth of nonclassical light is essential for implementing frequency-encoded/multiplexed quantum computation, communication, and networking protocols, and for bridging spectral mismatch among various quantum systems. However, quantum spectral control requires a strong nonlinearity mediated by light, microwave, or acoustics, which is challenging to realize with hig…
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Manipulating the frequency and bandwidth of nonclassical light is essential for implementing frequency-encoded/multiplexed quantum computation, communication, and networking protocols, and for bridging spectral mismatch among various quantum systems. However, quantum spectral control requires a strong nonlinearity mediated by light, microwave, or acoustics, which is challenging to realize with high efficiency, low noise, and on an integrated chip. Here, we demonstrate both frequency shifting and bandwidth compression of nonclassical light using an integrated thin-film lithium niobate (TFLN) phase modulator. We achieve record-high electro-optic frequency shearing of telecom single photons over terahertz range ($\pm$ 641 GHz or $\pm$ 5.2 nm), enabling high visibility quantum interference between frequency-nondegenerate photon pairs. We further operate the modulator as a time lens and demonstrate over eighteen-fold (6.55 nm to 0.35 nm) bandwidth compression of single photons. Our results showcase the viability and promise of on-chip quantum spectral control for scalable photonic quantum information processing.
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Submitted 18 December, 2021;
originally announced December 2021.
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Femtosecond Pulse Generation via an Integrated Electro-Optic Time Lens
Authors:
Mengjie Yu,
Christian Reimer,
David Barton,
Prashanta Kharel,
Rebecca Cheng,
Lingyan He,
Linbo Shao,
Di Zhu,
Yaowen Hu,
Hannah R. Grant,
Leif Johansson,
Yoshitomo Okawachi,
Alexander L. Gaeta,
Mian Zhang,
Marko Lončar
Abstract:
Integrated femtosecond pulse and frequency comb sources are critical components for a wide range of applications. The leading approaches for on-chip pulse generation rely on mode locking inside microresonator with either third-order nonlinearity or with semiconductor gain. These approaches, however, are limited in noise performance, wavelength tunability and repetition rates. Alternatively, sub-pi…
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Integrated femtosecond pulse and frequency comb sources are critical components for a wide range of applications. The leading approaches for on-chip pulse generation rely on mode locking inside microresonator with either third-order nonlinearity or with semiconductor gain. These approaches, however, are limited in noise performance, wavelength tunability and repetition rates. Alternatively, sub-picosecond pulses can be synthesized without mode-locking, by modulating a continuous-wave (CW) single-frequency laser using a cascade of electro-optic (EO) modulators. This method is particularly attractive due to its simplicity, robustness, and frequency-agility but has been realized only on a tabletop using multiple discrete EO modulators and requiring optical amplifiers (to overcome large insertion losses), microwave amplifiers, and phase shifters. Here we demonstrate a chip-scale femtosecond pulse source implemented on an integrated lithium niobate (LN) photonic platform18, using cascaded low-loss electro-optic amplitude and phase modulators and chirped Bragg grating, forming a time-lens system. The device is driven by a CW distributed feedback (DFB) chip laser and controlled by a single CW microwave source without the need for any stabilization or locking. We measure femtosecond pulse trains (520 fs duration) with a 30-GHz repetition rate, flat-top optical spectra with a 10-dB optical bandwidth of 12.6 nm, individual comb-line powers above 0.1 milliwatt, and pulse energies of 0.54 picojoule. Our results represent a tunable, robust and low-cost integrated pulsed light source with CW-to-pulse conversion efficiencies an order of magnitude higher than achieved with previous integrated sources. Our pulse generator can find applications from ultrafast optical measurement to networks of distributed quantum computers.
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Submitted 16 December, 2021;
originally announced December 2021.
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High-efficiency and broadband electro-optic frequency combs enabled by coupled micro-resonators
Authors:
Yaowen Hu,
Mengjie Yu,
Brandon Buscaino,
Neil Sinclair,
Di Zhu,
Rebecca Cheng,
Amirhassan Shams-Ansari,
Linbo Shao,
Mian Zhang,
Joseph M. Kahn,
Marko Loncar
Abstract:
Developments in integrated photonics have led to stable, compact, and broadband comb generators that support a wide range of applications. Current on-chip comb generators, however, are still limited by low optical pump-to-comb conversion efficiencies. Here, we demonstrate an integrated electro-optic frequency comb with a conversion efficiency of 30% and an optical bandwidth of 132 nm, featuring a…
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Developments in integrated photonics have led to stable, compact, and broadband comb generators that support a wide range of applications. Current on-chip comb generators, however, are still limited by low optical pump-to-comb conversion efficiencies. Here, we demonstrate an integrated electro-optic frequency comb with a conversion efficiency of 30% and an optical bandwidth of 132 nm, featuring a 100-times higher conversion efficiency and 2.2-times broader optical bandwidth compared with previous state-of-the-art integrated electro-optic combs. We further show that, enabled by the high efficiency, the device acts as an on-chip femtosecond pulse source (336 fs pulse duration), which is important for applications in nonlinear optics, sensing, and computing. As an example, in the ultra-fast and high-power regime, we demonstrate the observation of a combined EO-χ^(3) nonlinear frequency comb. Our device paves the way for practical optical frequency comb generators enabling energy-efficient computing, communication, and metrology, and provides a platform to investigate new regimes of optical physics that simultaneously involve multiple nonlinearities.
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Submitted 16 December, 2021; v1 submitted 29 November, 2021;
originally announced November 2021.
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Electrically-pumped high-power laser transmitter integrated on thin-film lithium niobate
Authors:
Amirhassan Shams-Ansari,
Dylan Renaud,
Rebecca Cheng,
Linbo Shao,
Lingyan He,
Di Zhu,
Mengjie Yu,
Hannah R. Grant,
Leif Johansson,
Mian Zhang,
Marko Loncar
Abstract:
Integrated thin-film lithium niobate (TFLN) photonics has emerged as a promising platform for realization of high-performance chip-scale optical systems. Of particular importance are TFLN electro-optic modulators featuring high-linearity, low driving voltage and lowpropagation loss. However, fully integrated system requires integration of high power, low noise, and narrow linewidth lasers on TFLN…
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Integrated thin-film lithium niobate (TFLN) photonics has emerged as a promising platform for realization of high-performance chip-scale optical systems. Of particular importance are TFLN electro-optic modulators featuring high-linearity, low driving voltage and lowpropagation loss. However, fully integrated system requires integration of high power, low noise, and narrow linewidth lasers on TFLN chip. Here we achieve this goal, and demonstrate integrated high-power lasers on TFLN platform with up to 60 mW of optical power in the waveguides. We use this platform to realize a highpower transmitter consisting an electrically-pumped laser integrated with a 50 GHz modulator.
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Submitted 25 November, 2021; v1 submitted 16 November, 2021;
originally announced November 2021.
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Telecommunication-wavelength two-dimensional photonic crystal cavities in a thin single-crystal diamond membrane
Authors:
Kazuhiro Kuruma,
Afaq Habib Piracha,
Dylan Renaud,
Cleaven Chia,
Neil Sinclair,
Athavan Nadarajah,
Alastair Stacey,
Steven Prawer,
Marko Lončar
Abstract:
We demonstrate two-dimensional photonic crystal cavities operating at telecommunication wavelengths in a single-crystal diamond membrane. We use a high-optical-quality and thin (~ 300 nm) diamond membrane, supported by a polycrystalline diamond frame, to realize fully suspended two-dimensional photonic crystal cavities with a high theoretical quality factor of ~ $8\times10^6$ and a relatively smal…
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We demonstrate two-dimensional photonic crystal cavities operating at telecommunication wavelengths in a single-crystal diamond membrane. We use a high-optical-quality and thin (~ 300 nm) diamond membrane, supported by a polycrystalline diamond frame, to realize fully suspended two-dimensional photonic crystal cavities with a high theoretical quality factor of ~ $8\times10^6$ and a relatively small mode volume of ~2$(λ/n)^3$. The cavities are fabricated in the membrane using electron-beam lithography and vertical dry etching. We observe cavity resonances over a wide wavelength range spanning the telecommunication O- and S-bands (1360 nm-1470 nm) with Q factors of up to ~1800. Our method offers a new direction for on-chip diamond nanophotonic applications in the telecommunication-wavelength range.
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Submitted 26 October, 2021; v1 submitted 29 June, 2021;
originally announced June 2021.
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Coupling of a Single Tin-vacancy Center to a Photonic Crystal Cavity in Diamond
Authors:
Kazuhiro Kuruma,
Benjamin **ault,
Cleaven Chia,
Dylan Renaud,
Patrick Hoffmann,
Satoshi Iwamoto,
Carsten Ronning,
Marko Lončar
Abstract:
We demonstrate optical coupling between a single tin-vacancy (SnV) center in diamond and a free-standing photonic crystal nanobeam cavity. The cavities are fabricated using quasi-isotropic etching and feature experimentally measured quality factors as high as ~11,000. We investigate the dependence of a single SnV center's emission by controlling the cavity wavelength using a laser-induced gas deso…
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We demonstrate optical coupling between a single tin-vacancy (SnV) center in diamond and a free-standing photonic crystal nanobeam cavity. The cavities are fabricated using quasi-isotropic etching and feature experimentally measured quality factors as high as ~11,000. We investigate the dependence of a single SnV center's emission by controlling the cavity wavelength using a laser-induced gas desorption technique. Under resonance conditions, we observe an intensity enhancement of the SnV emission by a factor of 12 and a 16-fold reduction of the SnV lifetime. Based on the large enhancement of the SnV emission rate inside the cavity, we estimate the Purcell factor for the SnV zero-phonon line to be 37 and the coupling efficiency of the SnV center to the cavity, the beta factor, to be 95%. Our work paves the way for the realization of quantum photonic devices and systems based on efficient photonic interfaces using the SnV color center in diamond.
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Submitted 11 June, 2021; v1 submitted 4 May, 2021;
originally announced May 2021.
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Quasi-static Optical Parametric Amplification
Authors:
Marc Jankowski,
Nayara Jornod,
Carsten Langrock,
Boris Desiatov,
Alireza Marandi,
Marko Lončar,
Martin M. Fejer
Abstract:
High-gain optical parametric amplification is an important nonlinear process used both as a source of coherent infrared light and as a source of nonclassical light. In this work, we experimentally demonstrate an approach to optical parametric amplification that enables extremely large parametric gains with low energy requirements. In conventional nonlinear media driven by femtosecond pulses, multi…
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High-gain optical parametric amplification is an important nonlinear process used both as a source of coherent infrared light and as a source of nonclassical light. In this work, we experimentally demonstrate an approach to optical parametric amplification that enables extremely large parametric gains with low energy requirements. In conventional nonlinear media driven by femtosecond pulses, multiple dispersion orders limit the effective interaction length available for parametric amplification. Here, we use the dispersion engineering available in periodically poled thin-film lithium niobate nanowaveguides to eliminate several dispersion orders at once. The result is a quasi-static process; the large peak intensity associated with a short pump pulse can provide gain to signal photons without undergoing pulse distortion or temporal walk-off. We characterize the parametric gain available in these waveguides using optical parametric generation, where vacuum fluctuations are amplified to macroscopic intensities. When driven with pulse energies in excess of 10 pJ, we observe saturated parametric gains as large as 88 dB (146 dB/cm). The devices shown here achieve saturated optical parametric generation with orders of magnitude less pulse energy than previous techniques.
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Submitted 2 April, 2022; v1 submitted 16 April, 2021;
originally announced April 2021.
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Probing dark exciton navigation through a local strain landscape in a WSe$_2$ monolayer
Authors:
Ryan J. Gelly,
Dylan Renaud,
Xing Liao,
Benjamin **ault,
Stefan Bogdanovic,
Giovanni Scuri,
Kenji Watanabe,
Takashi Taniguchi,
Bernhard Urbaszek,
Hongkun Park,
Marko Lončar
Abstract:
Monolayers of transition metal dichalcogenides (TMDs) have recently emerged as a promising optoelectronic platform. To leverage their full potential, however, it is important to understand and engineer the properties of the different exciton species that exist in these monolayers, as well as to control their transport through the material. A promising approach relies on engineering strain landscap…
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Monolayers of transition metal dichalcogenides (TMDs) have recently emerged as a promising optoelectronic platform. To leverage their full potential, however, it is important to understand and engineer the properties of the different exciton species that exist in these monolayers, as well as to control their transport through the material. A promising approach relies on engineering strain landscapes in atomically thin semiconductors that excitons navigate. In WSe$_2$ monolayers, for example, localized strain has been used to control the emission wavelength of excitons, induce exciton funneling and conversion, and even realize single-photon sources and quantum dots. Before these phenomena can be fully leveraged for applications, including quantum information processing, the details of excitons' interaction with the strain landscape must be well understood. To address this, we have developed a cryogenic technique capable of probing the dynamics of both bright and dark excitons in nanoscale strain landscapes in TMDs. In our approach, a nanosculpted tapered optical fiber is used to simultaneously generate strain and probe the near-field optical response of WSe$_2$ monolayers at 5 K. When the monolayer is pushed by the fiber, its lowest energy photoluminescence (PL) peaks red shift by as much as 390 meV, (corresponding to 20% of the bandgap of an unstrained WSe$_2$ monolayer). The red-shifting peaks are polarized perpendicularly to the WSe$_2$ plane and have long rising times (10 ps) and lifetimes (52 ps), indicating that they originate from nominally spin-forbidden dark excitons. Taken together, these observations indicate that dark excitons are funneled to the high-strain regions during their long lifetime and are the principal participants in drift and diffusion at cryogenic temperatures. Our work elucidates the important role that dark excitons play in locally strained WSe$_2$.
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Submitted 1 March, 2021;
originally announced March 2021.
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Supercontinuum Generation by Saturated Second-Order Nonlinear Interactions
Authors:
Marc Jankowski,
Carsten Langrock,
Boris Desiatov,
Marko Loncar,
M. M. Fejer
Abstract:
We propose a new approach to supercontinuum generation and carrier-envelope-offset detection based on saturated second-order nonlinear interactions in dispersion-engineered nanowaveguides. The technique developed here broadens the interacting harmonics by forming stable bifurcations of the pulse envelopes due to an interplay between phase-mismatch and pump depletion. We first present an intuitive…
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We propose a new approach to supercontinuum generation and carrier-envelope-offset detection based on saturated second-order nonlinear interactions in dispersion-engineered nanowaveguides. The technique developed here broadens the interacting harmonics by forming stable bifurcations of the pulse envelopes due to an interplay between phase-mismatch and pump depletion. We first present an intuitive heuristic model for spectral broadening by second-harmonic generation of femtosecond pulses, and show that this model agrees well with experiments. Then, having established strong agreement between theory and experiment, we develop scaling laws that determine the energy required to generate an octave of bandwidth as a function of input pulse duration, device length, and input pulse chirp. These scaling laws suggest that future realization based on this approach could enable supercontinuum generation with orders of magnitude less energy than current state-of-the-art devices.
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Submitted 8 January, 2024; v1 submitted 25 February, 2021;
originally announced February 2021.
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Integrated photonics on thin-film lithium niobate
Authors:
Di Zhu,
Linbo Shao,
Mengjie Yu,
Rebecca Cheng,
Boris Desiatov,
C. J. Xin,
Yaowen Hu,
Jeffrey Holzgrafe,
Soumya Ghosh,
Amirhassan Shams-Ansari,
Eric Puma,
Neil Sinclair,
Christian Reimer,
Mian Zhang,
Marko Lončar
Abstract:
Lithium niobate (LN), an outstanding and versatile material, has influenced our daily life for decades: from enabling high-speed optical communications that form the backbone of the Internet to realizing radio-frequency filtering used in our cell phones. This half-century-old material is currently embracing a revolution in thin-film LN integrated photonics. The success of manufacturing wafer-scale…
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Lithium niobate (LN), an outstanding and versatile material, has influenced our daily life for decades: from enabling high-speed optical communications that form the backbone of the Internet to realizing radio-frequency filtering used in our cell phones. This half-century-old material is currently embracing a revolution in thin-film LN integrated photonics. The success of manufacturing wafer-scale, high-quality, thin films of LN on insulator (LNOI), accompanied with breakthroughs in nanofabrication techniques, have made high-performance integrated nanophotonic components possible. With rapid development in the past few years, some of these thin-film LN devices, such as optical modulators and nonlinear wavelength converters, have already outperformed their legacy counterparts realized in bulk LN crystals. Furthermore, the nanophotonic integration enabled ultra-low-loss resonators in LN, which unlocked many novel applications such as optical frequency combs and quantum transducers. In this Review, we cover -- from basic principles to the state of the art -- the diverse aspects of integrated thin-film LN photonics, including the materials, basic passive components, and various active devices based on electro-optics, all-optical nonlinearities, and acousto-optics. We also identify challenges that this platform is currently facing and point out future opportunities. The field of integrated LNOI photonics is advancing rapidly and poised to make critical impacts on a broad range of applications in communication, signal processing, and quantum information.
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Submitted 23 February, 2021;
originally announced February 2021.
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Electrical Control of Surface Acoustic Waves
Authors:
Linbo Shao,
Di Zhu,
Marco Colangelo,
Dae Hun Lee,
Neil Sinclair,
Yaowen Hu,
Peter T. Rakich,
Keji Lai,
Karl K. Berggren,
Marko Loncar
Abstract:
Acoustic waves at microwave frequencies have been widely used in wireless communication and recently emerged as versatile information carriers in quantum applications. However, most acoustic devices are passive components, and dynamic control of acoustic waves in a low-loss and scalable manner remains an outstanding challenge, which hinders the development of phononic integrated circuits. Here we…
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Acoustic waves at microwave frequencies have been widely used in wireless communication and recently emerged as versatile information carriers in quantum applications. However, most acoustic devices are passive components, and dynamic control of acoustic waves in a low-loss and scalable manner remains an outstanding challenge, which hinders the development of phononic integrated circuits. Here we demonstrate electrical control of traveling acoustic waves on an integrated lithium niobate platform at both room and millikelvin temperatures. We modulate the phase and amplitude of the acoustic waves and demonstrate an acoustic frequency shifter by serrodyne phase modulation. Furthermore, we show reconfigurable nonreciprocal modulation by tailoring the phase matching between acoustic and quasi-traveling electric fields. Our scalable electro-acoustic platform comprises the fundamental elements for arbitrary acoustic signal processing and manipulation of phononic quantum information.
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Submitted 7 March, 2022; v1 submitted 5 January, 2021;
originally announced January 2021.
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High-Q Lithium Niobate Microcavities and Their Applications
Authors:
Cheng Wang,
Mian Zhang,
Marko Lončar
Abstract:
Lithium niobate (LN) is an excellent nonlinear optical and electro-optic material that has found many applications in classical nonlinear optics, optical fiber communications and quantum photonics. Here we review the recent development of thin-film LN technology that has allowed the miniaturization of LN photonic devices and microcavities with ultrahigh quality factors. We discuss the design princ…
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Lithium niobate (LN) is an excellent nonlinear optical and electro-optic material that has found many applications in classical nonlinear optics, optical fiber communications and quantum photonics. Here we review the recent development of thin-film LN technology that has allowed the miniaturization of LN photonic devices and microcavities with ultrahigh quality factors. We discuss the design principle of LN devices that makes use of the largest nonlinear coefficients, various device fabrication approaches and resulting device performances, and the current and potential applications of LN microcavities.
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Submitted 16 November, 2020;
originally announced December 2020.
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Nonreciprocal Transmission of Microwave Acoustic Waves in Nonlinear Parity-Time Symmetric Resonators
Authors:
Linbo Shao,
Wenbo Mao,
Smarak Maity,
Neil Sinclair,
Yaowen Hu,
Lan Yang,
Marko Lončar
Abstract:
Acoustic waves have emerged as versatile on-chip information carriers with applications ranging from microwave filters to transducers. Nonreciprocal devices are desirable for the control and routing of high-frequency phonons. This is challenging, however, due to the linear response of most acoustic systems. Here, we leverage the strong piezoelectricity of lithium niobate to demonstrate fully tunab…
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Acoustic waves have emerged as versatile on-chip information carriers with applications ranging from microwave filters to transducers. Nonreciprocal devices are desirable for the control and routing of high-frequency phonons. This is challenging, however, due to the linear response of most acoustic systems. Here, we leverage the strong piezoelectricity of lithium niobate to demonstrate fully tunable gain, loss, and nonlinearity for surface acoustic waves using electric circuitry. This allows the construction of a nonlinear acoustic parity-time-symmetric system and enables nonreciprocal transmission. We achieve a nonreciprocity of 10 decibels for a 200-MHz acoustic wave at a low input power of 3 $μ$W and further demonstrate one-way circulation of acoustic waves by cascading nonreciprocal devices. Our work illustrates the potential of this piezoelectric platform for on-chip phononic processing and exploration of non-Hermitian physics.
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Submitted 16 July, 2020;
originally announced July 2020.
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Wafer-scale low-loss lithium niobate photonic integrated circuits
Authors:
Kevin Luke,
Prashanta Kharel,
Christian Reimer,
Lingyan He,
Marko Loncar,
Mian Zhang
Abstract:
Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we demonstrate monolithic LN PICs fabricated on 4- and 6-inch wafers with deep ultraviolet lithography and show smooth and uniform etching, achieving 0.27 dB/cm optical pro…
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Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we demonstrate monolithic LN PICs fabricated on 4- and 6-inch wafers with deep ultraviolet lithography and show smooth and uniform etching, achieving 0.27 dB/cm optical propagation loss on wafer-scale. Our results show that LN PICs are fundamentally scalable and can be highly cost-effective.
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Submitted 3 July, 2020;
originally announced July 2020.
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Reconfigurable electro-optic frequency shifter
Authors:
Yaowen Hu,
Mengjie Yu,
Di Zhu,
Neil Sinclair,
Amirhassan Shams-Ansari,
Linbo Shao,
Jeffrey Holzgrafe,
Eric Puma,
Mian Zhang,
Marko Loncar
Abstract:
Here we demonstrate an on-chip electro-optic frequency shifter that is precisely controlled using only a single-tone microwave signal. This is accomplished by engineering the density of states of, and coupling between, optical modes in ultra-low loss electro-optic waveguides and resonators realized in lithium niobate nanophotonics. Our device provides frequency shifts as high as 28 GHz with measur…
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Here we demonstrate an on-chip electro-optic frequency shifter that is precisely controlled using only a single-tone microwave signal. This is accomplished by engineering the density of states of, and coupling between, optical modes in ultra-low loss electro-optic waveguides and resonators realized in lithium niobate nanophotonics. Our device provides frequency shifts as high as 28 GHz with measured shift efficiencies of ~99% and insertion loss of <0.5 dB. Importantly, the device can be reconfigured as a tunable frequency-domain beam splitter, in which the splitting ratio and splitting frequency are controlled by microwave power and frequency, respectively. Using the device, we also demonstrate (non-blocking) frequency routing through an efficient exchange of information between two distinct frequency channels, i.e. swap operation. Finally, we show that our scheme can be scaled to achieve cascaded frequency shifts beyond 100 GHz. Our device could become an essential building-block for future high-speed and large-scale classical information processors as well as emerging frequency-domain photonic quantum computers.
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Submitted 19 May, 2020;
originally announced May 2020.
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Integrated microwave acousto-optic frequency shifter on thin-film lithium niobate
Authors:
Linbo Shao,
Neil Sinclair,
James Leatham,
Yaowen Hu,
Mengjie Yu,
Terry Turpin,
Devon Crowe,
Marko Loncar
Abstract:
Electrically driven acousto-optic devices that provide beam deflection and optical frequency shifting have broad applications from pulse synthesis to heterodyne detection. Commercially available acousto-optic modulators are based on bulk materials and consume Watts of radio frequency power. Here, we demonstrate an integrated 3-GHz acousto-optic frequency shifter on thin-film lithium niobate, featu…
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Electrically driven acousto-optic devices that provide beam deflection and optical frequency shifting have broad applications from pulse synthesis to heterodyne detection. Commercially available acousto-optic modulators are based on bulk materials and consume Watts of radio frequency power. Here, we demonstrate an integrated 3-GHz acousto-optic frequency shifter on thin-film lithium niobate, featuring a carrier suppression over 30 dB. Further, we demonstrate a gigahertz-spaced optical frequency comb featuring more than 200 lines over a 0.6-THz optical bandwidth by recirculating the light in an active frequency shifting loop. Our integrated acousto-optic platform leads to the development of on-chip optical routing, isolation, and microwave signal processing.
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Submitted 7 May, 2020;
originally announced May 2020.