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Photophysics of blue quantum emitters in hexagonal Boron Nitride
Authors:
Ivan Zhigulin,
Karin Yamamura,
Viktor Ivády,
Angus Gale,
Jake Horder,
Charlene J. Lobo,
Mehran Kianinia,
Milos Toth,
Igor Aharonovich
Abstract:
Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The emitters are fabricated by different electron beam irradiation and annealing conditions and exhibit narrow-band luminescence centred at 436 nm. Photon statisti…
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Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The emitters are fabricated by different electron beam irradiation and annealing conditions and exhibit narrow-band luminescence centred at 436 nm. Photon statistics as well as rigorous photodynamics analysis unveils potential level structure of the emitters, which suggests lack of a metastable state, supported by a theoretical analysis. The potential defect can have an electronic structure with fully occupied defect state in the lower half of the hBN band gap and empty defect state in the upper half of the band gap. Overall, our results are important to understand the photophysical properties of the emerging family of blue quantum emitters in hBN as potential sources for scalable quantum photonic applications.
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Submitted 10 January, 2023;
originally announced January 2023.
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Stark effect of quantum blue emitters in hBN
Authors:
Ivan Zhigulin,
Jake Horder,
Victor Ivady,
Simon J. U. White,
Angus Gale,
Chi Li,
Charlene J. Lobo,
Milos Toth,
Igor Aharonovich,
Mehran Kianinia
Abstract:
Inhomogeneous broadening is a major limitation for the application of quantum emitters in hBN to integrated quantum photonics. Here we demonstrate that blue emitters with an emission wavelength of 436 nm are less sensitive to electric fields than other quantum emitter species in hBN. Our measurements of Stark shifts indicate negligible transition dipole moments for these centers with dominant quad…
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Inhomogeneous broadening is a major limitation for the application of quantum emitters in hBN to integrated quantum photonics. Here we demonstrate that blue emitters with an emission wavelength of 436 nm are less sensitive to electric fields than other quantum emitter species in hBN. Our measurements of Stark shifts indicate negligible transition dipole moments for these centers with dominant quadratic stark effect. Using these results, we employed DFT calculations to identify possible point defects with small transition dipole moments, which may be the source of blue emitters in hBN.
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Submitted 1 August, 2022;
originally announced August 2022.
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Super-resolution imaging of quantum emitters in layered materials
Authors:
Mehran Kianinia,
Carlo Bradac,
Fan Wang,
Bernd Sontheimer,
Toan Trong Tran,
Minh Nguyen,
Sejeong Kim,
Zai-Quan Xu,
Dayong **,
Andreas W. Schell,
Charlene J. Lobo,
Igor Aharonovich,
Milos Toth
Abstract:
Layered van der Waals materials are emerging as compelling two-dimensional (2D) platforms for studies of nanophotonics, polaritonics, valleytronics and spintronics, and have the potential to transform applications in sensing, imaging and quantum information processing. Amongst these, hexagonal boron nitride (hBN) is unique in that it hosts ultra-bright, room temperature single photon emitters (SPE…
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Layered van der Waals materials are emerging as compelling two-dimensional (2D) platforms for studies of nanophotonics, polaritonics, valleytronics and spintronics, and have the potential to transform applications in sensing, imaging and quantum information processing. Amongst these, hexagonal boron nitride (hBN) is unique in that it hosts ultra-bright, room temperature single photon emitters (SPEs). However, an outstanding challenge is to locate SPEs in hBN with high precision, a task which requires breaking the optical diffraction limit. Here, we report the imaging of SPEs in layered hBN with a spatial resolution of 63 nm using ground state depletion (GSD) nanoscopy. Furthermore, we show that SPEs in hBN possess nonlinear photophysical properties which can be used to realize a new variant of GSD that employs a coincident pair of doughnut-shaped lasers to reduce the laser power that is needed to achieve a given resolution target. Our findings expand the current understanding of the photophysics of quantum emitters in layered hBN and demonstrate the potential for advanced nanophotonic and bio-imaging applications which require localization of individual emitters with super-resolution accuracy.
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Submitted 21 September, 2017;
originally announced September 2017.
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Robust, directed assembly of fluorescent nanodiamonds
Authors:
Mehran Kianinia,
Andreas W. Schell,
Olga Shimoni,
Steven J. Randolph,
Milos Toth,
Igor Aharonovich,
Charlene J. Lobo
Abstract:
Arrays of fluorescent nanoparticles are highly sought after for applications in sensing and nanophotonics. Here we present a simple and robust method of assembling fluorescent nanodiamonds into macroscopic arrays. Remarkably, the yield of this directed assembly process is greater than 90% and the assembled patterns withstand ultra-sonication for more than three hours. The assembly process is based…
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Arrays of fluorescent nanoparticles are highly sought after for applications in sensing and nanophotonics. Here we present a simple and robust method of assembling fluorescent nanodiamonds into macroscopic arrays. Remarkably, the yield of this directed assembly process is greater than 90% and the assembled patterns withstand ultra-sonication for more than three hours. The assembly process is based on covalent bonding of carboxyl to amine functional carbon seeds and is applicable to any material, and to non-planar surfaces. Our results pave the way to directed assembly of sensing and nanophotonics devices.
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Submitted 17 May, 2016;
originally announced May 2016.
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Robust multicolor single photon emission from point defects in hexagonal boron nitride
Authors:
Toan Trong Tran,
Christopher ElBadawi,
Daniel Totonjian,
Charlene J Lobo,
Gabriele Grosso,
Hyowon Moon,
Dirk R. Englund,
Michael J. Ford,
Igor Aharonovich,
Milos Toth
Abstract:
Hexagonal boron nitride (hBN) is an emerging two dimensional material for quantum photonics owing to its large bandgap and hyperbolic properties. Here we report a broad range of multicolor room temperature single photon emissions across the visible and the near infrared spectral ranges from point defects in hBN multilayers. We show that the emitters can be categorized into two general groups, but…
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Hexagonal boron nitride (hBN) is an emerging two dimensional material for quantum photonics owing to its large bandgap and hyperbolic properties. Here we report a broad range of multicolor room temperature single photon emissions across the visible and the near infrared spectral ranges from point defects in hBN multilayers. We show that the emitters can be categorized into two general groups, but most likely possess similar crystallographic structure. We further show two approaches for engineering of the emitters using either electron beam irradiation or annealing, and characterize their photophysical properties. The emitters exhibit narrow line widths of sub 10 nm at room temperature, and a short excited state lifetime with high brightness. Remarkably, the emitters are extremely robust and withstand aggressive annealing treatments in oxidizing and reducing environments. Our results constitute the first step towards deterministic engineering of single emitters in 2D materials and hold great promise for the use of defects in boron nitride as sources for quantum information processing and nanophotonics.
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Submitted 31 March, 2016;
originally announced March 2016.
