Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration
Authors:
M. H. Shao,
H. F. Liu,
R. He,
X. M. Li,
L. Wu,
J. Ma,
X. C. Hu,
R. T. Zhao,
Z. C. Zhong,
Y. Yu,
C. H. Wan,
Y. Yang,
C. -W. Nan,
X. D. Bai,
T. -L. Ren,
X. Renshaw Wang
Abstract:
Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation of the metastable ferroelectric phase and the polarization degradation during field cycling, the ability of oxygen vacancy to exactly engineer and switch polariz…
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Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation of the metastable ferroelectric phase and the polarization degradation during field cycling, the ability of oxygen vacancy to exactly engineer and switch polarization remains to be elucidated. Here we report reversibly electrochemical control of ferroelectricity in Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) heterostructures with a mixed ionic-electronic LaSrMnO$_3$ electrode, achieving a hard breakdown field more than 18 MV/cm, over fourfold as high as that of typical HZO. The electrical extraction and insertion of oxygen into HZO is macroscopically characterized and atomically imaged in situ. Utilizing this reversible process, we achieved multiple polarization states and even repeatedly repaired the damaged ferroelectricity by reversed negative electric fields. Our study demonstrates the robust and switchable ferroelectricity in hafnia oxide distinctly associated with oxygen vacancy and opens up opportunities to recover, manipulate, and utilize rich ferroelectric functionalities for advanced ferroelectric functionality to empower the existing Si-based electronics such as multi-bit storage.
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Submitted 20 June, 2021;
originally announced June 2021.
Novel magnetic and ferroelectric behaviors observed in alpha Fe2O3 particles
Authors:
Zhi Ma,
Long Zhou,
Xu Long Zhang,
Hong Fei Liu,
Huan Ming Chen,
Fu Zheng,
Hua Gao
Abstract:
Alpha Fe2O3 powders have been prepared by the reduction reaction method with NaHB4 as reducing agent and followed a conventional sintering process. The XRD pattern with Rietveld refinement profile reveal that the prepared Fe2O3 with corundum structure (hematite). VSM loop exhibits obvious room-temperature weak ferromagnetism, a pinched hysteresis loop may introduced by the shape anisotropy effect.…
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Alpha Fe2O3 powders have been prepared by the reduction reaction method with NaHB4 as reducing agent and followed a conventional sintering process. The XRD pattern with Rietveld refinement profile reveal that the prepared Fe2O3 with corundum structure (hematite). VSM loop exhibits obvious room-temperature weak ferromagnetism, a pinched hysteresis loop may introduced by the shape anisotropy effect. The simultaneous ferroelectric behavior of α-Fe2O3 with "five-fold" ferroelectric hysteresis loops approves that this structured Fe2O3 can be known as a novel multiferroic material.
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Submitted 19 September, 2020;
originally announced September 2020.
