TSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing
Authors:
P. Zhao,
J. -P. Likforman,
H. Y. Li,
J. Tao,
T. Henner,
Y. D. Lim,
W. W. Seit,
C. S. Tan,
Luca Guidoni
Abstract:
In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary geometry design with increasing electrodes numbers and evolving complexity. The integration of TSVs reduces the form factor of ion trap by more than 80%, minimizing…
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In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary geometry design with increasing electrodes numbers and evolving complexity. The integration of TSVs reduces the form factor of ion trap by more than 80%, minimizing parasitic capacitance from 32 to 3 pF. A low RF dissipation is achieved in spite of the absence of ground screening layer. The entire fabrication process is on 12-inch wafer and compatible with established CMOS back end process. We demonstrate the basic functionality of the trap by loading and laser-cooling single 88Sr+ ions. It is found that both heating rate (17 quanta/ms for an axial frequency of 300 kHz) and lifetime (~30 minutes) are comparable with traps of similar dimensions. This work pioneers the development of TSV-integrated ion traps, enriching the toolbox for scalable quantum computing.
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Submitted 4 January, 2021;
originally announced January 2021.
Large 2D Coulomb crystals in a radio frequency surface ion trap
Authors:
B. Szymanski,
R. Dubessy,
B. Dubost,
S. Guibal,
J. -P. Likforman,
L. Guidoni
Abstract:
We designed and operated a surface ion trap, with an ion-substrate distance of 500\mum, realized with standard printed-circuit-board techniques. The trap has been loaded with up to a few thousand Sr+ ions in the Coulomb-crystal regime. An analytical model of the pseudo-potential allowed us to determine the parameters that drive the trap into anisotropic regimes in which we obtain large (N>150) pur…
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We designed and operated a surface ion trap, with an ion-substrate distance of 500\mum, realized with standard printed-circuit-board techniques. The trap has been loaded with up to a few thousand Sr+ ions in the Coulomb-crystal regime. An analytical model of the pseudo-potential allowed us to determine the parameters that drive the trap into anisotropic regimes in which we obtain large (N>150) purely 2D ion Coulomb crystals. These crystals may open a simple and reliable way to experiments on quantum simulations of large 2D systems.
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Submitted 12 January, 2012;
originally announced January 2012.
