Showing 1–7 of 7 results for author: Lian, Y

An adaptive multiresolution flux reconstruction method with local time step** and artificial viscosity for compressible flows simulations

Authors: Yixuan Lian, **sheng Cai, Shucheng Pan

Abstract: In this paper, we introduce a novel approach that combines multiresolution (MR) techniques with the flux reconstruction (FR) method to accurately and effciently simulate compressible flows. We achieve further enhancements in effciency through the incorporation of local time step**, and we add artificial viscosity to capture shocks. With the developed MR-FR algorithm, the layer difference of two… ▽ More In this paper, we introduce a novel approach that combines multiresolution (MR) techniques with the flux reconstruction (FR) method to accurately and effciently simulate compressible flows. We achieve further enhancements in effciency through the incorporation of local time step**, and we add artificial viscosity to capture shocks. With the developed MR-FR algorithm, the layer difference of two adjacent elements can exceed 1, and simulation errors can be adjusted by manipulating a single scalar. To ensure conservation, information communication between nodes at different layers is accomplished using L2 projection. Additionally, we propose an innovative indicator based on MR analysis to detect discontinuities, enabling us to take full advantage of the details generated by MR. By indicating smoothness and adding artificial viscosity only to the finest meshes, computational costs can be reduced and errors resulting from artificial diffusion can be locally limited. Numerical tests demonstrate that the adoption of MR preserve the convergence order of the FR method, and the newly proposed indicator performs well in detecting discontinuities. Overall, the MR-FR algorithm can accurately simulate compressible flows with strong shocks and physical dissipation using significantly fewer grids, making it a promising approach for further applications. △ Less

Submitted 20 June, 2023; originally announced June 2023.

Efficient and ultra-stable perovskite light-emitting diodes

Authors: Bingbing Guo, Runchen Lai, Sijie Jiang, Yaxiao Lian, Zhixiang Ren, Puyang Li, Xuhui Cao, Shiyu Xing, Yaxin Wang, Weiwei Li, Chen Zou, Mengyu Chen, Cheng Li, Baodan Zhao, Dawei Di

Abstract: Perovskite light-emitting diodes (PeLEDs) have emerged as a strong contender for next-generation display and information technologies. However, similar to perovskite solar cells, the poor operational stability remains the main obstacle toward commercial applications. Here we demonstrate ultra-stable and efficient PeLEDs with extraordinary operational lifetimes (T50) of 1.0x10^4 h, 2.8x10^4 h, 5.4x… ▽ More Perovskite light-emitting diodes (PeLEDs) have emerged as a strong contender for next-generation display and information technologies. However, similar to perovskite solar cells, the poor operational stability remains the main obstacle toward commercial applications. Here we demonstrate ultra-stable and efficient PeLEDs with extraordinary operational lifetimes (T50) of 1.0x10^4 h, 2.8x10^4 h, 5.4x10^5 h, and 1.9x10^6 h at initial radiance (or current densities) of 3.7 W/sr/m2 (~5 mA/cm2), 2.1 W/sr/m2 (~3.2 mA/cm2), 0.42 W/sr/m2 (~1.1 mA/cm2), and 0.21 W/sr/m2 (~0.7 mA/cm2) respectively, and external quantum efficiencies of up to 22.8%. Key to this breakthrough is the introduction of a dipolar molecular stabilizer, which serves two critical roles simultaneously. First, it prevents the detrimental transformation and decomposition of the alpha-phase FAPbI3 perovskite, by inhibiting the formation of lead and iodide intermediates. Secondly, hysteresis-free device operation and microscopic luminescence imaging experiments reveal substantially suppressed ion migration in the emissive perovskite. The record-long PeLED lifespans are encouraging, as they now satisfy the stability requirement for commercial organic LEDs (OLEDs). These results remove the critical concern that halide perovskite devices may be intrinsically unstable, paving the path toward industrial applications. △ Less

Submitted 16 April, 2022; originally announced April 2022.

Comments: This is a preprint of the paper prior to peer review. New and updated results may be available in the final version from the publisher

Journal ref: Nature Photonics 16, 637-643 (2022)

Ultralow-voltage operation of light-emitting diodes

Authors: Yaxiao Lian, Dongchen Lan, Shiyu Xing, Bingbing Guo, Runchen Lai, Baodan Zhao, Richard H. Friend, Dawei Di

Abstract: The radiative recombination of injected charge carriers gives rise to electroluminescence (EL), a central process for light-emitting diode (LED) operation. It is often presumed in some emerging fields of optoelectronics, including perovskite and organic LEDs, that the minimum voltage required for light emission is the semiconductor bandgap divided by the elementary charge. Here we show for many cl… ▽ More The radiative recombination of injected charge carriers gives rise to electroluminescence (EL), a central process for light-emitting diode (LED) operation. It is often presumed in some emerging fields of optoelectronics, including perovskite and organic LEDs, that the minimum voltage required for light emission is the semiconductor bandgap divided by the elementary charge. Here we show for many classes of LEDs, including those based on metal halide perovskite, organic, chalcogenide quantum-dot and commercial III-V semiconductors, photon emission can be generally observed at record-low driving voltages of 36%-60% of their bandgaps, corresponding to a large apparent energy gain of 0.6-1.4 eV per emitted photon. Importantly, for various classes of LEDs with very different modes of charge injection and recombination (dark saturation current densities ranging from ~10^-35 to ~10^-21 mA/cm2), their EL intensity-voltage curves under low voltages exhibit similar behaviors, revealing a universal origin of ultralow-voltage device operation. Finally, we demonstrate as a proof-of-concept that perovskite LEDs can transmit data efficiently to a silicon detector at 1V, a voltage below the silicon bandgap. Our work provides a fresh insight into the operational limits of electroluminescent diodes, highlighting the significant potential of integrating low-voltage LEDs with silicon electronics for next-generation communications and computational applications. △ Less

Submitted 3 August, 2021; originally announced August 2021.

Journal ref: Nature Communications 13, 3845 (2022)

Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit

Authors: Qian Zhou, Arfa Karani, Yaxiao Lian, Baodan Zhao, Richard H. Friend, Dawei Di

Abstract: The Shockley-Queisser (SQ) limit, introduced by W. Shockley and H. J. Queisser in 1961, is the most well-established fundamental efficiency limit for single-junction photovoltaic solar cells. For widely-studied semiconductors such as Si, GaAs and lead-halide perovskite, the SQ limits under standard solar illumination (1-sun) are 32.7%, 32.5% and 31% for bandgaps of 1.12 eV, 1.43 eV and 1.55 eV, re… ▽ More The Shockley-Queisser (SQ) limit, introduced by W. Shockley and H. J. Queisser in 1961, is the most well-established fundamental efficiency limit for single-junction photovoltaic solar cells. For widely-studied semiconductors such as Si, GaAs and lead-halide perovskite, the SQ limits under standard solar illumination (1-sun) are 32.7%, 32.5% and 31% for bandgaps of 1.12 eV, 1.43 eV and 1.55 eV, respectively. Here, we propose that the fundamental efficiency limits for single-junction solar cells may be surpassed via photon confinement, substantially raising the theoretical limits to 49%, 45.2% and 42.1% for Si, GaAs and methylammonium lead iodide (MAPbI3) perovskite cells under 1-sun. Such enhancement is possible through the containment of luminescent photons within the solar cell, allowing the suppression of both non-radiative and radiative recombination losses, which were considered inevitable in the classical SQ model. Importantly, restricting photon emission from the solar cells raises the open-circuit voltage (VOC) to values approaching the semiconductor bandgaps, surpassing the theoretical VOC values predicted by the SQ model. The fill factors of the cells are expected to increase substantially, resulting in current-voltage characteristics with very-high squareness for ideal diode operation. Our work introduces a new framework for improving solar cell performance beyond the conventional limits. △ Less

Submitted 8 June, 2021; originally announced June 2021.

A High Accuracy and High Sensitivity System Architecture for Electrical Impedance Tomography System

Authors: Hui Li, Boxiao Liu, Yongfu Li, Guoxing Wang, Yong Lian

Abstract: A high accuracy and high sensitivity system architecture is proposed for the read-out circuit of electrical impedance tomography system-on-chip. The switched ratiometric technique is applied in the proposed architecture. The proposed system architecture minimizes the device noise by processing signals from both read-out electrodes and the stimulus. The quantized signals are post-processed in the d… ▽ More A high accuracy and high sensitivity system architecture is proposed for the read-out circuit of electrical impedance tomography system-on-chip. The switched ratiometric technique is applied in the proposed architecture. The proposed system architecture minimizes the device noise by processing signals from both read-out electrodes and the stimulus. The quantized signals are post-processed in the digital processing unit for proper signal demodulation and impedance ratio calculation. Our proposed architecture improves the sensitivity of the read-out circuit, cancels out the gain fluctuations in the system, and overcomes the effects of motion artifacts on measurements. △ Less

Submitted 2 October, 2018; originally announced October 2018.

Machine Learning Promoting Extreme Simplification of Spectroscopy Equipment

Authors: Jianchao Lee, Qiannan Duan, Sifan Bi, Ruen Luo, Yachao Lian, Hanqiang Liu, Ruixing Tian, Jiayuan Chen, Guodong Ma, **hong Gao, Zhaoyi Xu

Abstract: The spectroscopy measurement is one of main pathways for exploring and understanding the nature. Today, it seems that racing artificial intelligence will remould its styles. The algorithms contained in huge neural networks are capable of substituting many of expensive and complex components of spectrum instruments. In this work, we presented a smart machine learning strategy on the measurement of… ▽ More The spectroscopy measurement is one of main pathways for exploring and understanding the nature. Today, it seems that racing artificial intelligence will remould its styles. The algorithms contained in huge neural networks are capable of substituting many of expensive and complex components of spectrum instruments. In this work, we presented a smart machine learning strategy on the measurement of absorbance curves, and also initially verified that an exceedingly-simplified equipment is sufficient to meet the needs for this strategy. Further, with its simplicity, the setup is expected to infiltrate into many scientific areas in versatile forms. △ Less

Submitted 13 September, 2019; v1 submitted 5 August, 2018; originally announced August 2018.

Comments: This is the second version. On pages 7 through 8, we have added a new case about the spectral properties of mixtures. Specifically, paragraph 1 on page 8 and Fig.7 is added

Letter of Intent: A New QCD facility at the M2 beam line of the CERN SPS (COMPASS++/AMBER)

Authors: B. Adams, C. A. Aidala, R. Akhunzyanov, G. D. Alexeev, M. G. Alexeev, A. Amoroso, V. Andrieux, N. V. Anfimov, V. Anosov, A. Antoshkin, K. Augsten, W. Augustyniak, C. D. R. Azevedo, A. Azhibekov, B. Badelek, F. Balestra, M. Ball, J. Barth, R. Beck, Y. Bedfer, J. Berenguer Antequera, J. C. Bernauer, J. Bernhard, M. Bodlak, P. Bordalo , et al. (242 additional authors not shown)

Abstract: A New QCD facility at the M2 beam line of the CERN SPS COMPASS++/AMBER A New QCD facility at the M2 beam line of the CERN SPS COMPASS++/AMBER △ Less

Submitted 25 January, 2019; v1 submitted 2 August, 2018; originally announced August 2018.

Comments: 91 pages, 51 figures

Report number: CERN-SPSC-2019-003 (SPSC-I-250)