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Study of the decay and production properties of $D_{s1}(2536)$ and $D_{s2}^*(2573)$
Authors:
M. Ablikim,
M. N. Achasov,
P. Adlarson,
O. Afedulidis,
X. C. Ai,
R. Aliberti,
A. Amoroso,
Q. An,
Y. Bai,
O. Bakina,
I. Balossino,
Y. Ban,
H. -R. Bao,
V. Batozskaya,
K. Begzsuren,
N. Berger,
M. Berlowski,
M. Bertani,
D. Bettoni,
F. Bianchi,
E. Bianco,
A. Bortone,
I. Boyko,
R. A. Briere,
A. Brueggemann
, et al. (645 additional authors not shown)
Abstract:
The $e^+e^-\rightarrow D_s^+D_{s1}(2536)^-$ and $e^+e^-\rightarrow D_s^+D^*_{s2}(2573)^-$ processes are studied using data samples collected with the BESIII detector at center-of-mass energies from 4.530 to 4.946~GeV. The absolute branching fractions of $D_{s1}(2536)^- \rightarrow \bar{D}^{*0}K^-$ and $D_{s2}^*(2573)^- \rightarrow \bar{D}^0K^-$ are measured for the first time to be…
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The $e^+e^-\rightarrow D_s^+D_{s1}(2536)^-$ and $e^+e^-\rightarrow D_s^+D^*_{s2}(2573)^-$ processes are studied using data samples collected with the BESIII detector at center-of-mass energies from 4.530 to 4.946~GeV. The absolute branching fractions of $D_{s1}(2536)^- \rightarrow \bar{D}^{*0}K^-$ and $D_{s2}^*(2573)^- \rightarrow \bar{D}^0K^-$ are measured for the first time to be $(35.9\pm 4.8\pm 3.5)\%$ and $(37.4\pm 3.1\pm 4.6)\%$, respectively. The measurements are in tension with predictions based on the assumption that the $D_{s1}(2536)$ and $D_{s2}^*(2573)$ are dominated by a bare $c\bar{s}$ component. The $e^+e^-\rightarrow D_s^+D_{s1}(2536)^-$ and $e^+e^-\rightarrow D_s^+D^*_{s2}(2573)^-$ cross sections are measured, and a resonant structure at around 4.6~GeV with a width of 50~MeV is observed for the first time with a statistical significance of $15σ$ in the $e^+e^-\rightarrow D_s^+D^*_{s2}(2573)^-$ process. It could be the $Y(4626)$ found by the Belle collaboration in the $D_s^+D_{s1}(2536)^{-}$ final state, since they have similar masses and widths. There is also evidence for a structure at around 4.75~GeV in both processes.
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Submitted 10 July, 2024;
originally announced July 2024.
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Stochastic p-Bits Based on Spin-Orbit Torque Magnetic Tunnel Junctions
Authors:
X. H. Li,
M. K. Zhao,
R. Zhang,
C. H. Wan,
Y. Z. Wang,
X. M. Luo,
S. Q. Liu,
J. H. Xia,
G. Q. Yu,
X. F. Han
Abstract:
Stochastic p-Bit devices play a pivotal role in solving NP-hard problems, neural network computing, and hardware accelerators for algorithms such as the simulated annealing. In this work, we focus on Stochastic p-Bits based on high-barrier magnetic tunnel junctions (HB-MTJs) with identical stack structure and cell geometry, but employing different spin-orbit torque (SOT) switching schemes. We cond…
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Stochastic p-Bit devices play a pivotal role in solving NP-hard problems, neural network computing, and hardware accelerators for algorithms such as the simulated annealing. In this work, we focus on Stochastic p-Bits based on high-barrier magnetic tunnel junctions (HB-MTJs) with identical stack structure and cell geometry, but employing different spin-orbit torque (SOT) switching schemes. We conducted a comparative study of their switching probability as a function of pulse amplitude and width of the applied voltage. Through experimental and theoretical investigations, we have observed that the Y-type SOT-MTJs exhibit the gentlest dependence of the switching probability on the external voltage. This characteristic indicates superior tunability in randomness and enhanced robustness against external disturbances when Y-type SOT-MTJs are employed as stochastic p-Bits. Furthermore, the random numbers generated by these Y-type SOT-MTJs, following XOR pretreatment, have successfully passed the National Institute of Standards and Technology (NIST) SP800-22 test. This comprehensive study demonstrates the high performance and immense potential of Y-type SOT-MTJs for the implementation of stochastic p-Bits.
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Submitted 5 June, 2023;
originally announced June 2023.
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STCF Conceptual Design Report: Volume 1 -- Physics & Detector
Authors:
M. Achasov,
X. C. Ai,
R. Aliberti,
L. P. An,
Q. An,
X. Z. Bai,
Y. Bai,
O. Bakina,
A. Barnyakov,
V. Blinov,
V. Bobrovnikov,
D. Bodrov,
A. Bogomyagkov,
A. Bondar,
I. Boyko,
Z. H. Bu,
F. M. Cai,
H. Cai,
J. J. Cao,
Q. H. Cao,
Z. Cao,
Q. Chang,
K. T. Chao,
D. Y. Chen,
H. Chen
, et al. (413 additional authors not shown)
Abstract:
The Super $τ$-Charm facility (STCF) is an electron-positron collider proposed by the Chinese particle physics community. It is designed to operate in a center-of-mass energy range from 2 to 7 GeV with a peak luminosity of $0.5\times 10^{35}{\rm cm}^{-2}{\rm s}^{-1}$ or higher. The STCF will produce a data sample about a factor of 100 larger than that by the present $τ$-Charm factory -- the BEPCII,…
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The Super $τ$-Charm facility (STCF) is an electron-positron collider proposed by the Chinese particle physics community. It is designed to operate in a center-of-mass energy range from 2 to 7 GeV with a peak luminosity of $0.5\times 10^{35}{\rm cm}^{-2}{\rm s}^{-1}$ or higher. The STCF will produce a data sample about a factor of 100 larger than that by the present $τ$-Charm factory -- the BEPCII, providing a unique platform for exploring the asymmetry of matter-antimatter (charge-parity violation), in-depth studies of the internal structure of hadrons and the nature of non-perturbative strong interactions, as well as searching for exotic hadrons and physics beyond the Standard Model. The STCF project in China is under development with an extensive R\&D program. This document presents the physics opportunities at the STCF, describes conceptual designs of the STCF detector system, and discusses future plans for detector R\&D and physics case studies.
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Submitted 5 October, 2023; v1 submitted 28 March, 2023;
originally announced March 2023.
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Realization of ultra-broadband IR up-conversion imaging
Authors:
X. H. Li,
P. Bai,
S. H. Huang,
X. Q. Bai,
W. J. Song,
X. R. Lian,
C. Hu,
Z. W. Shi,
W. Z. Shen,
Y. H. Zhang,
Z. L. Fu,
D. X. Shao,
Z. Y. Tan,
J. C. Cao,
C. Tan,
G. Y. Xu
Abstract:
Ultra-broadband imaging devices with high performance are in great demand for a variety of technological applications, including imaging, remote sensing, and communications. An ultra-broadband up-converter is realized based on a p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) detector-light emitting diode (LED) device. The device demonstrates an ultra-broad response ran…
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Ultra-broadband imaging devices with high performance are in great demand for a variety of technological applications, including imaging, remote sensing, and communications. An ultra-broadband up-converter is realized based on a p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) detector-light emitting diode (LED) device. The device demonstrates an ultra-broad response ranging from visible to terahertz (THz) with good reproducibility. The peak responsivity in the mid-infrared (MIR) region is 140 mA/W at 10.5 microns. The HIWIP-LED shows enormous potential for ultra-broadband up-conversion covering all infrared atmospheric windows, as well as the THz region, and the pixel-less imaging of the MIR spot from the CO2 laser is further demonstrated. In addition, the proposed up-converter also performs as a near-infrared and visible detector under zero bias by using a bi-functional LED. Thanks to its ultra-wide response, the HIWIP-LED up-converter has great promise for stable, high-performance ultra-broadband pixel-less imaging and multi-functional analysis systems.
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Submitted 23 May, 2022;
originally announced May 2022.
