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Barium Titanate and Lithium Niobate Permittivity and Pockels Coefficients from MHz to Sub-THz Frequencies
Authors:
Daniel Chelladurai,
Manuel Kohli,
Joel Winiger,
David Moor,
Andreas Messner,
Yuriy Fedoryshyn,
Mohammed Eleraky,
Yuqi Liu,
Hua Wang,
Juerg Leuthold
Abstract:
The Pockels effect is essential for controlling optical signals at the highest speeds. We present the first measurements of the Pockels coefficients and permittivity in lithium niobate (LN) and barium titanate (BTO) over a continuous frequency range from 100 MHz to 330 GHz. These properties are constant across this frequency range in LN but have a significant frequency dependence in BTO. Still, ou…
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The Pockels effect is essential for controlling optical signals at the highest speeds. We present the first measurements of the Pockels coefficients and permittivity in lithium niobate (LN) and barium titanate (BTO) over a continuous frequency range from 100 MHz to 330 GHz. These properties are constant across this frequency range in LN but have a significant frequency dependence in BTO. Still, our measurements show that BTO ($\varepsilon$ = 1136, $r_{42}$ = 481 pm/V, $r_{33}$ = 125 pm/V at 100 MHz, $\varepsilon$ = 453, $r_{42}$ = 191 pm/V, $r_{33}$ = 60 pm/V at 330 GHz) has remarkably large electro-optic properties compared to LN ($\varepsilon$ = 27, $r_{42}$ = 15 pm/V, $r_{33}$ = 27 pm/V). Furthermore, we show how BTO devices can be designed with a flat electro-optic frequency response despite the Pockels coefficient dispersion. Finally, we expound our method for broadband characterization of these vital electro-optic properties, utilizing specialized integrated electro-optic phase shifters. Altogether, this work is foundational to designing high-speed BTO devices and to develo** new electro-optic materials.
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Submitted 3 July, 2024;
originally announced July 2024.
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Large-Scale Bottom-Up Fabricated 3D Nonlinear Photonic Crystals
Authors:
Viola Valentina Vogler-Neuling,
Ülle-Linda Talts,
Rebecca Ferraro,
Helena Weigand,
Giovanni Finco,
Joel Winiger,
Peter Benedek,
Justine Kusch,
Artemios Karvounis,
Vanessa Wood,
Jürg Leuthold,
Rachel Grange
Abstract:
Nonlinear optical effects are used to generate coherent light at wavelengths difficult to reach with lasers. Materials periodically poled or nanostructured in the nonlinear susceptibility in three spatial directions are called 3D nonlinear photonic crystals (NPhCs). They enable enhanced nonlinear optical conversion efficiencies, emission control, and simultaneous generation of nonlinear wavelength…
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Nonlinear optical effects are used to generate coherent light at wavelengths difficult to reach with lasers. Materials periodically poled or nanostructured in the nonlinear susceptibility in three spatial directions are called 3D nonlinear photonic crystals (NPhCs). They enable enhanced nonlinear optical conversion efficiencies, emission control, and simultaneous generation of nonlinear wavelengths. The chemical inertness of efficient second-order nonlinear materials ($χ^{(2)}$) prohibited their nanofabrication until 2018. The current method is restricted to top-down laser-based techniques limiting the periodicity along z-axis to 10 um. We demonstrate the first bottom-up fabricated 3D NPhC in sol-gel derived barium titanate by soft-nanoimprint lithography: a woodpile with eight layers and periodicities of 1 um (xy-plane) and 300 nm (z-plane). The surface areas exceed $5.3\cdot 10^4$ um^2, which is two orders of magnitude larger than the state-of-the-art. This study is expected to initiate bottom-up fabrication of 3D NPhCs with a supremely strong and versatile nonlinear response.
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Submitted 5 October, 2023;
originally announced October 2023.
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Sol-gel Barium Titanate Nanohole Array as a Nonlinear Metasurface and a Photonic Crystal
Authors:
Ülle-Linda Talts,
Helena C. Weigand,
Grégoire Saerens,
Peter Benedek,
Joel Winiger,
Vanessa Wood,
Jürg Leuthold,
Viola Vogler-Neuling,
Rachel Grange
Abstract:
The quest of a nonlinear optical material that can be easily nanostructured over a large surface area is still ongoing. Here, we demonstrate a nanoimprinted nonlinear barium titanate 2D nanohole array that shows optical properties of a 2D photonic crystal and metasurface, depending on the direction of the optical axis. The challenge of nanostructuring the inert metal-oxide is resolved by direct so…
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The quest of a nonlinear optical material that can be easily nanostructured over a large surface area is still ongoing. Here, we demonstrate a nanoimprinted nonlinear barium titanate 2D nanohole array that shows optical properties of a 2D photonic crystal and metasurface, depending on the direction of the optical axis. The challenge of nanostructuring the inert metal-oxide is resolved by direct soft nanoimprint lithography with sol-gel derived barium titanate enabling critical dimensions of 120 nm with aspect ratios of 5. The nanohole array exhibits a photonic bandgap in the infrared range when probed along the slab axis while lattice resonant states are observed in out-of-plane transmission configuration. The enhanced light-matter interaction from the resonant structure enables to increase the second-harmonic generation in the near-UV by a factor of 18 illustrating the potential in the flexible fabrication technique for barium titanate photonic devices.
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Submitted 21 July, 2023;
originally announced July 2023.
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Carbon ablators with porosity designed for enhanced aerospace thermal protection
Authors:
Erik Poloni,
Florian Bouville,
Alexander L. Schmid,
Pedro I. B. G. B. Pelissari,
Victor C. Pandolfelli,
Marcelo L. C. Sousa,
Elena Tervoort,
George Christidis,
Valery Shklover,
Juerg Leuthold,
André R. Studart
Abstract:
Porous carbon ablators offer cost-effective thermal protection for aerospace vehicles during re-entry into planetary atmospheres. However, the exploration of more distant planets requires the development of ablators that are able to withstand stronger thermal radiation conditions. Here, we report the development of bio-inspired porous carbon insulators with pore sizes that are deliberately tuned t…
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Porous carbon ablators offer cost-effective thermal protection for aerospace vehicles during re-entry into planetary atmospheres. However, the exploration of more distant planets requires the development of ablators that are able to withstand stronger thermal radiation conditions. Here, we report the development of bio-inspired porous carbon insulators with pore sizes that are deliberately tuned to enhance heat-shielding performance by increasing scattering of high-temperature thermal radiation. Pore size intervals that promote scattering are first estimated using an established model for the radiative contribution to the thermal conductivity of porous insulators. On the basis of this theoretical analysis, we identify a polymer additive that enables the formation of pores in the desired size range through the polymerization-induced phase separation of a mixture of phenolic resin and ethylene glycol. Optical and electron microscopy, porosimetry and mechanical tests are used to characterize the structure and properties of porous insulators prepared with different resin formulations. Insulators with pore sizes in the optimal scattering range reduce laser-induced damage of the porous structures by up to 42%, thus offering a promising and simple route for the fabrication of carbon ablators for enhanced thermal protection at high temperatures.
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Submitted 8 October, 2021;
originally announced October 2021.
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Waveguide coupled III-V photodiodes monolithically integrated on Si
Authors:
Pengyan Wen,
Preksha Tiwari,
Svenja Mauthe,
Heinz Schmid,
Marilyne Sousa,
Markus Scherrer,
Michael Baumann,
Bertold Ian Bitachon,
Juerg Leuthold,
Bernd Gotsmann,
Kirsten E. Moselund
Abstract:
The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In0.5Ga0.5As/InP p-i-n structure. The waveguide coupled devices show a dark current down to 0.048 A/cm2 at -1 V and a respons…
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The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In0.5Ga0.5As/InP p-i-n structure. The waveguide coupled devices show a dark current down to 0.048 A/cm2 at -1 V and a responsivity up to 0.2 A/W at -2 V. Using grating couplers centered around 1320 nm, we observed a cutoff frequency f3dB exceeding 70 GHz and data reception at 50 GBd with OOK and 4PAM. When operated in forward bias as light emitting diode, the devices emit light centered at 1550 nm. Furthermore, we also investigate the self-heating of the devices using scanning thermal microscopy and find a temperature increase of only ~15 K during the device operation as emitter, in accordance with thermal simulation results.
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Submitted 18 May, 2022; v1 submitted 28 May, 2021;
originally announced June 2021.
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Plasmonic Ferroelectric Modulators
Authors:
Andreas Messner,
Felix Eltes,
** Ma,
Stefan Abel,
Benedikt Baeuerle,
Arne Josten,
Wolfgang Heni,
Daniele Caimi,
Jean Fompeyrine,
Juerg Leuthold
Abstract:
Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical operation range, resilience to high temperature and ultracompact footprint are introduced. Measurements show a modulation bandwidth of 70 GHz and a temperature stability up to 250°C. Mach-Zehnder interferometer modulators with 10-$μ$m-long phase shifters were operated at 116 Gbit/s PAM-4 and 72 Gbit/s NRZ. Wide…
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Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical operation range, resilience to high temperature and ultracompact footprint are introduced. Measurements show a modulation bandwidth of 70 GHz and a temperature stability up to 250°C. Mach-Zehnder interferometer modulators with 10-$μ$m-long phase shifters were operated at 116 Gbit/s PAM-4 and 72 Gbit/s NRZ. Wide and open eye diagrams with extinction ratios beyond 15 dB were found. The fast and robust devices are apt to an employment in industrial environments.
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Submitted 31 October, 2019;
originally announced November 2019.
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Waveguide-integrated van der Waals heterostructure photodetector at telecom band with high speed and high responsivity
Authors:
Nikolaus Flöry,
** Ma,
Yannick Salamin,
Alexandros Emboras,
Takashi Taniguchi,
Kenji Watanabe,
Juerg Leuthold,
Lukas Novotny
Abstract:
Intensive efforts have been devoted to exploit novel optoelectronic devices based on two-dimensional (2D) transition-metal dichalcogenides (TMDCs) owing to their strong light-matter interaction and distinctive material properties. In particular, photodetectors featuring both high-speed and high-responsivity performance are of great interest for a vast number of applications such as high-data-rate…
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Intensive efforts have been devoted to exploit novel optoelectronic devices based on two-dimensional (2D) transition-metal dichalcogenides (TMDCs) owing to their strong light-matter interaction and distinctive material properties. In particular, photodetectors featuring both high-speed and high-responsivity performance are of great interest for a vast number of applications such as high-data-rate interconnects operated at standardized telecom wavelengths. Yet, the intrinsically small carrier mobilities of TMDCs become a bottleneck for high-speed application use. Here, we present high-performance vertical van der Waals heterostructure-based photodetectors integrated on a silicon photonics platform. Our vertical MoTe2/graphene heterostructure design minimizes the carrier transit path length in TMDCs and enables a record-high measured bandwidth of at least 24GHz under a moderate bias voltage of -3 volts. Applying a higher bias or employing thinner MoTe2 flakes boosts the bandwidth even to 50GHz. Simultaneously, our device reaches a high external responsivity of 0.2A/W for incident light at 1300nm, benefiting from the integrated waveguide design. Our studies shed light on performance trade-offs and present design guidelines for fast and efficient devices. The combination of 2D heterostructures and integrated guided-wave nano photonics defines an attractive platform to realize high-performance optoelectronic devices, such as photodetectors, light-emitting devices and electro-optic modulators.
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Submitted 23 April, 2019;
originally announced April 2019.
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500 GHz plasmonic Mach-Zehnder modulator enabling sub-THz microwave photonics
Authors:
Maurizio Burla,
Claudia Hoessbacher,
Wolfgang Heni,
Christian Haffner,
Yuriy Fedoryshyn,
Dominik Werner,
Tatsuhiko Watanabe,
Hermann Massler,
Delwin Elder,
Larry Dalton,
Juerg Leuthold
Abstract:
Broadband electro-optic intensity modulators are essential to convert electrical signals to the optical domain. The growing interest in THz wireless applications demands modulators with frequency responses to the sub-THz range, high power handling and very low nonlinear distortions, simultaneously. However, a modulator with all those characteristics has not been demonstrated to date. Here we exper…
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Broadband electro-optic intensity modulators are essential to convert electrical signals to the optical domain. The growing interest in THz wireless applications demands modulators with frequency responses to the sub-THz range, high power handling and very low nonlinear distortions, simultaneously. However, a modulator with all those characteristics has not been demonstrated to date. Here we experimentally demonstrate that plasmonic modulators do not trade off any performance parameter, featuring - at the same time - a short length of 10s of micrometers, record-high flat frequency response beyond 500 GHz, high power handling and high linearity, and we use them to create a sub-THz radio-over-fiber analog optical link. These devices have the potential to become a new tool in the general field of microwave photonics, making the sub-THz range accessible to e.g. 5G wireless communications, antenna remoting, IoT, sensing, and more.
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Submitted 31 December, 2018;
originally announced January 2019.
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Plasmonically enhanced graphene photodetector featuring 100 GBd, high-responsivity and compact size
Authors:
** Ma,
Yannick Salamin,
Benedikt Baeuerle,
Arne Josten,
Wolfgang Heni,
Yuriy Fedoryshyn,
Alexandros Emboras,
Juerg Leuthold
Abstract:
Graphene has shown great potentials for high-speed photodetection. Yet, the responsivities of graphene-based high-speed photodetectors are commonly limited by the weak effective absorption of atomically thin graphene. Here, we propose and experimentally demonstrate a plasmonically enhanced waveguide-integrated graphene photodetector. The device which combines a 6 micron long layer of graphene with…
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Graphene has shown great potentials for high-speed photodetection. Yet, the responsivities of graphene-based high-speed photodetectors are commonly limited by the weak effective absorption of atomically thin graphene. Here, we propose and experimentally demonstrate a plasmonically enhanced waveguide-integrated graphene photodetector. The device which combines a 6 micron long layer of graphene with field-enhancing nano-sized metallic structures, demonstrates a high external responsivity of 0.5 A/W and a fast photoresponse way beyond 110 GHz. The high efficiency and fast response of the device enables for the first time 100 Gbit/s PAM-2 and 100 Gbit/s PAM-4 data reception with a graphene based device. The results show the potential of graphene as a new technology for highest-speed communication applications.
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Submitted 31 August, 2018;
originally announced August 2018.
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Single Atom Plasmonic Switch
Authors:
Alexandros Emboras,
Jens Niegemann,
** Ma,
Christian Haffner,
Mathieu Luisier,
Christian Hafner,
Thomas Schimmel,
Juerg Leuthold
Abstract:
The atom sets an ultimate scaling limit to Moores law in the electronics industry. And while electronics research already explores atomic scales devices, photonics research still deals with devices at the micrometer scale. Here we demonstrate that photonic scaling-similar to electronics-is only limited by the atom. More precisely, we introduce an electrically controlled single atom plasmonic switc…
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The atom sets an ultimate scaling limit to Moores law in the electronics industry. And while electronics research already explores atomic scales devices, photonics research still deals with devices at the micrometer scale. Here we demonstrate that photonic scaling-similar to electronics-is only limited by the atom. More precisely, we introduce an electrically controlled single atom plasmonic switch. The switch allows for fast and reproducible switching by means of the relocation of an individual or at most -- a few atoms in a plasmonic cavity. Depending on the location of the atom either of two distinct plasmonic cavity resonance states are supported. Experimental results show reversible digital optical switching with an extinction ration of 10 dB and operation at room temperature with femtojoule (fJ) power consumption for a single switch operation. This demonstration of a CMOS compatible, integrated quantum device allowing to control photons at the single-atom level opens intriguing perspectives for a fully integrated and highly scalable chip platform -- a platform where optics, electronics and memory may be controlled at the single-atom level.
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Submitted 5 December, 2018; v1 submitted 31 August, 2015;
originally announced August 2015.
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Optical loss by surface transfer do** in silicon waveguides
Authors:
Luca Alloatti,
Christian Koos,
Juerg Leuthold
Abstract:
We show that undoped silicon waveguides may suffer of up to 1.8 dB/cm free-carrier absorption caused by improper surface passivation. To verify the effects of free-carriers we apply a gate field to the waveguides. Smallest losses correspond to higher electrical sheet resistances and are generally obtained with non-zero gate fields. The presence of free carriers for zero gate field is attributed to…
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We show that undoped silicon waveguides may suffer of up to 1.8 dB/cm free-carrier absorption caused by improper surface passivation. To verify the effects of free-carriers we apply a gate field to the waveguides. Smallest losses correspond to higher electrical sheet resistances and are generally obtained with non-zero gate fields. The presence of free carriers for zero gate field is attributed to surface transfer do**. These results open new perspectives for minimizing propagation losses in silicon waveguides and for obtaining low-loss and highly conductive silicon films without applying a gate voltage.
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Submitted 28 April, 2015;
originally announced April 2015.
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Second-order nonlinear optical metamaterials: ABC-type nanolaminates
Authors:
Luca Alloatti,
Clemens Kieninger,
Andreas Froelich,
Matthias Lauermann,
Tobias Frenzel,
Kira Koehnle,
Wolfgang Freude,
Juerg Leuthold,
Martin Wegener,
Christian Koos
Abstract:
Structuring optical materials on a nanometer scale can lead to artificial effective media, or metamaterials, with strongly altered optical behavior. Metamaterials can provide a wide range of linear optical properties such as negative refractive index, hyperbolic dispersion, or magnetic behavior at optical frequencies. Nonlinear optical properties, however, have only been demonstrated for patterned…
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Structuring optical materials on a nanometer scale can lead to artificial effective media, or metamaterials, with strongly altered optical behavior. Metamaterials can provide a wide range of linear optical properties such as negative refractive index, hyperbolic dispersion, or magnetic behavior at optical frequencies. Nonlinear optical properties, however, have only been demonstrated for patterned metallic films which suffer from high optical losses. Here we show that second-order nonlinear metamaterials can also be obtained from non-metallic centrosymmetric constituents with inherently low optical absorption. In our proof-of-principle experiments, we have iterated atomic-layer deposition (ALD) of three different constituents, A = Al$_2$O$_3$, B = TiO$_2$ and C = HfO$_2$. The centrosymmetry of the resulting ABC stack is broken since the ABC and the inverted CBA sequences are not equivalent - a necessary condition for non-zero second-order nonlinearity. To the best of our knowledge, this is the first realization of a bulk nonlinear optical metamaterial.
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Submitted 3 April, 2015; v1 submitted 1 April, 2015;
originally announced April 2015.
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Coherent terabit communications with microresonator Kerr frequency combs
Authors:
Joerg Pfeifle,
Victor Brasch,
Matthias Lauermann,
Yimin Yu,
Daniel Wegner,
Tobias Herr,
Klaus Hartinger,
Philipp Schindler,
**gshi Li,
David Hillerkuss,
Rene Schmogrow,
Claudius Weimann,
Ronald Holzwarth,
Wolfgang Freude,
Juerg Leuthold,
Tobias J. Kippenberg,
Christian Koos
Abstract:
Optical frequency combs enable coherent data transmission on hundreds of wavelength channels and have the potential to revolutionize terabit communications. Generation of Kerr combs in nonlinear integrated microcavities represents a particularly promising option enabling line spacings of tens of GHz, compliant with wavelength-division multiplexing (WDM) grids. However, Kerr combs may exhibit stron…
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Optical frequency combs enable coherent data transmission on hundreds of wavelength channels and have the potential to revolutionize terabit communications. Generation of Kerr combs in nonlinear integrated microcavities represents a particularly promising option enabling line spacings of tens of GHz, compliant with wavelength-division multiplexing (WDM) grids. However, Kerr combs may exhibit strong phase noise and multiplet spectral lines, and this has made high-speed data transmission impossible up to now. Recent work has shown that systematic adjustment of pump conditions enables low phase-noise Kerr combs with singlet spectral lines. Here we demonstrate that Kerr combs are suited for coherent data transmission with advanced modulation formats that pose stringent requirements on the spectral purity of the optical source. In a first experiment, we encode a data stream of 392 Gbit/s on subsequent lines of a Kerr comb using quadrature phase shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM). A second experiment shows feedback-stabilization of a Kerr comb and transmission of a 1.44 Tbit/s data stream over a distance of up to 300 km. The results demonstrate that Kerr combs can meet the highly demanding requirements of multi-terabit/s coherent communications and thus offer a solution towards chip-scale terabit/s transceivers.
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Submitted 22 February, 2014; v1 submitted 3 July, 2013;
originally announced July 2013.
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Single-laser 32.5 Tbit/s Nyquist WDM transmission
Authors:
David Hillerkuss,
Rene Schmogrow,
Matthias Meyer,
Stefan Wolf,
Meinert Jordan,
Philipp Kleinow,
Nicole Lindenmann,
Philipp C. Schindler,
Argishti Melikyan,
Xin Yang,
Shalva Ben-Ezra,
Bernd Nebendahl,
Michael Dreschmann,
Joachim Meyer,
Francesca Parmigiani,
Periklis Petropoulos,
Bojan Resan,
Aandreas Oehler,
Kurt Weingarten,
Lars Altenhain,
Tobias Ellermeyer,
Matthias Moeller,
Michael Huebner,
Juergen Becker,
Christian Koos
, et al. (2 additional authors not shown)
Abstract:
We demonstrate 32.5 Tbit/s 16QAM Nyquist WDM transmission over a total length of 227 km of SMF-28 without optical dispersion compensation. A number of 325 optical carriers are derived from a single laser and encoded with dual-polarization 16QAM data using sinc-shaped Nyquist pulses. As we use no guard bands, the carriers have a spacing of 12.5 GHz equal to the Nyquist bandwidth of the data. We ach…
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We demonstrate 32.5 Tbit/s 16QAM Nyquist WDM transmission over a total length of 227 km of SMF-28 without optical dispersion compensation. A number of 325 optical carriers are derived from a single laser and encoded with dual-polarization 16QAM data using sinc-shaped Nyquist pulses. As we use no guard bands, the carriers have a spacing of 12.5 GHz equal to the Nyquist bandwidth of the data. We achieve a high net spectral efficiency of 6.4 bit/s/Hz using a software-defined transmitter which generates the electrical modulator drive signals in real-time.
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Submitted 27 January, 2016; v1 submitted 12 March, 2012;
originally announced March 2012.
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Photonic Wire Bonds for Terabit/s Chip-to-Chip Interconnects
Authors:
Nicole Lindenmann,
Gerhard Balthasar,
David Hillerkuss,
Rene Schmogrow,
Meinert Jordan,
Juerg Leuthold,
Wolfgang Freude,
Christian Koos
Abstract:
Photonic integration has witnessed tremendous progress over the last years, and chip-scale transceiver systems with Terabit/s data rates have come into reach. However, as on-chip integration density increases, efficient off-chip interfaces are becoming more and more crucial. A technological breakthrough is considered indispensable to cope with the challenges arising from large-scale photonic integ…
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Photonic integration has witnessed tremendous progress over the last years, and chip-scale transceiver systems with Terabit/s data rates have come into reach. However, as on-chip integration density increases, efficient off-chip interfaces are becoming more and more crucial. A technological breakthrough is considered indispensable to cope with the challenges arising from large-scale photonic integration, and this particularly applies to short-distance optical interconnects. In this letter we introduce the concept of photonic wire bonding, where transparent waveguide wire bonds are used to bridge the gap between nanophotonic circuits located on different chips. We demonstrate for the first time the fabrication of three-dimensional freeform photonic wire bonds (PWB), and we confirm their viability in a multi-Terabit/s data transmission experiment. First-generation prototypes allow for efficient broadband coupling with overall losses of only 1.6 dB. Photonic wire bonding will enable flexible optical multi-chip assemblies, thereby challenging the current paradigm of highly-complex monolithic integration.
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Submitted 2 November, 2011;
originally announced November 2011.