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Coherent WDM transmission using quantum-dash mode-locked laser diodes as multi-wavelength source and local oscillator
Authors:
Juned N. Kemal,
Pablo Marin-Palomo,
Vivek Panapakkam,
Philipp Trocha,
Stefan Wolf,
Kamel Merghem,
Francois Lelarge,
Abderrahim Ramdane,
Sebastian Randel,
Wolfgang Freude,
Christian Koos
Abstract:
Quantum-dash (QD) mode-locked laser diodes (MLLD) lend themselves as chip-scale frequency comb generators for highly scalable wavelength-division multiplexing (WDM) links in future data-center, campus-area, or metropolitan networks. Driven by a simple DC current, the devices generate flat broadband frequency combs, containing tens of equidistant optical tones with line spacings of tens of GHz. Her…
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Quantum-dash (QD) mode-locked laser diodes (MLLD) lend themselves as chip-scale frequency comb generators for highly scalable wavelength-division multiplexing (WDM) links in future data-center, campus-area, or metropolitan networks. Driven by a simple DC current, the devices generate flat broadband frequency combs, containing tens of equidistant optical tones with line spacings of tens of GHz. Here we show that QD-MLLDs can not only be used as multi-wavelength light sources at a WDM transmitter, but also as multi-wavelength local oscillators (LO) for parallel coherent reception. In our experiments, we demonstrate transmission of an aggregate data rate of 4.1 Tbit/s (23x45 GBd PDM-QPSK) over 75 km standard single-mode fiber (SSMF). To the best of our knowledge, this represents the first demonstration of a coherent WDM link that relies on QD-MLLD both at the transmitter and the receiver.
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Submitted 5 August, 2019;
originally announced September 2019.
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Comb-based WDM transmission at 10 Tbit/s using a DC-driven quantum-dash mode-locked laser diode
Authors:
Pablo Marin-Palomo,
Juned N. Kemal,
Philipp Trocha,
Stefan Wolf,
Kamel Merghem,
François Lelarge,
Abderrahim Ramdane,
Wolfgang Freude,
Sebastian Randel,
Christian Koos
Abstract:
Chip-scale frequency comb generators have the potential to become key building blocks of compact wavelength-division multiplexing (WDM) transceivers in future metropolitan or campus-area networks. Among the various comb generator concepts, quantum-dash (QD) mode-locked laser diodes (MLLD) stand out as a particularly promising option, combining small footprint with simple operation by a DC current…
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Chip-scale frequency comb generators have the potential to become key building blocks of compact wavelength-division multiplexing (WDM) transceivers in future metropolitan or campus-area networks. Among the various comb generator concepts, quantum-dash (QD) mode-locked laser diodes (MLLD) stand out as a particularly promising option, combining small footprint with simple operation by a DC current and offering flat broadband comb spectra. However, the data transmission performance achieved with QD-MLLD was so far limited by strong phase noise of the individual comb tones, restricting experiments to rather simple modulation formats such as quadrature phase shift keying (QPSK) or requiring hard-ware-based compensation schemes. Here we demonstrate that these limitations can be over-come by digital symbol-wise phase tracking algorithms, avoiding any hardware-based phase-noise compensation. We demonstrate 16QAM dual-polarization WDM transmission on 38 channels at an aggregate net data rate of 10.68 Tbit/s over 75 km of standard single-mode fiber. To the best of our knowledge, this corresponds to the highest data rate achieved through a DC-driven chip-scale comb generator without any hardware-based phase-noise reduction schemes.
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Submitted 3 May, 2019; v1 submitted 22 April, 2019;
originally announced April 2019.
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Semiconductor laser mode locking stabilization with optical feedback from a silicon PIC
Authors:
Johannes Hauck,
Andrea Zazzi,
Alexandre Garreau,
François Lelarge,
Alvaro Moscoso-Mártir,
Florian Merget,
Jeremy Witzens
Abstract:
Semiconductor mode-locked lasers can be used in a variety of applications ranging from multi-carrier sources for WDM communication systems to time base references for metrology. Their packaging in compact chip- or module-level systems remains however burdened by their strong sensitivity to back-reflections, quickly destroying the coherence of the mode-locking. Here, we investigate the stabilizatio…
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Semiconductor mode-locked lasers can be used in a variety of applications ranging from multi-carrier sources for WDM communication systems to time base references for metrology. Their packaging in compact chip- or module-level systems remains however burdened by their strong sensitivity to back-reflections, quickly destroying the coherence of the mode-locking. Here, we investigate the stabilization of mode-locked lasers directly edge coupled to a silicon photonic integrated circuit, with the objective of moving isolators downstream to the output of the photonic circuit. A 2.77 kHz 3 dB RF linewidth, substantially improved compared to the 15.01 kHz of the free running laser, is obtained in the best case. Even in presence of detrimental reflections from the photonic circuit, substantial linewidth reductions from 20 kHz to 8.82 kHz, from 572 kHz to 14.8 kHz, and from 1.5 MHz to 40 kHz are realized.
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Submitted 14 May, 2019; v1 submitted 30 October, 2018;
originally announced December 2018.
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A multi-GHz chaotic optoelectronic oscillator based on laser terminal voltage
Authors:
C. Y. Chang,
Daeyoung Choi,
A. Locquet,
Michael J. Wishon K. Merghem,
Abderrahim Ramdane,
Francois Lelarge,
A. Martinez,
D. S. Citrin
Abstract:
A multi-GHz chaotic optoelectronic oscillator based on an external cavity semiconductor laser (ECL) is demonstrated. Unlike standard optoelectronic oscillators for microwave applications, we do not employ the dynamic light output incident on a photodiode to generate the microwave signal, but instead generate the microwave signal directly by measuring the terminal voltage V (t) of the laser diode o…
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A multi-GHz chaotic optoelectronic oscillator based on an external cavity semiconductor laser (ECL) is demonstrated. Unlike standard optoelectronic oscillators for microwave applications, we do not employ the dynamic light output incident on a photodiode to generate the microwave signal, but instead generate the microwave signal directly by measuring the terminal voltage V (t) of the laser diode of the ECL under constant-current operation, thus obviating the photodiode entirely.
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Submitted 20 September, 2017;
originally announced September 2017.
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Tunable X-band optoelectronic oscillators based on external-cavity semiconductor lasers
Authors:
C. Y. Chang,
Michael J. Wishon,
Daeyoung Choi,
Junliang Dong,
K. Merghem,
Abderrahim Ramdane,
Francois Lelarge,
A. Martinez,
A. Locquet,
D. S. Citrin
Abstract:
Laser diodes with optical feedback can exhibit periodic intensity oscillations at or near the relaxation-oscillation frequency. We demonstrate optoelectronic oscillators based on external-cavity semiconductor lasers in a periodic dynamical regime tunable over the entire X-band. Moreover, unlike standard optoelectronic oscillators, we need not employ the time-dependent optical intensity incident o…
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Laser diodes with optical feedback can exhibit periodic intensity oscillations at or near the relaxation-oscillation frequency. We demonstrate optoelectronic oscillators based on external-cavity semiconductor lasers in a periodic dynamical regime tunable over the entire X-band. Moreover, unlike standard optoelectronic oscillators, we need not employ the time-dependent optical intensity incident on a photodiode to generate the microwave signal, but rather have the option of generating the electrical microwave signal directly as a voltage $V(t)$ at the laser-diode injection terminals under constant current operation; no photodiode need be involved, thus circumventing optical-to-electrical conversion. We achieve a timing jitter of $\lesssim 10$ ps and a quality factor of $\gtrsim 2\times 10^5$ across the entire X-band, that ranges from 6.79 GHz to 11.48 GHz. Tuning is achieved by varying the injection current $J$.
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Submitted 20 September, 2017;
originally announced September 2017.
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Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser
Authors:
Alvaro Moscoso-Mártir,
Juliana Müller,
Johannes Hauck,
Nicolas Chimot,
Rony Setter,
Avner Badihi,
Daniel E. Rasmussen,
Alexandre Garreau,
Mads Nielsen,
Elmira Islamova,
Sebastián Romero-García,
Bin Shen,
Anna Sandomirsky,
Sylvie Rockman,
Chao Li,
Saeed Sharif Azadeh,
Guo-Qiang Lo,
Elad Mentovich,
Florian Merget,
François Lelarge,
Jeremy Witzens
Abstract:
We demonstrate a complete Silicon Photonics WDM link relying on a single section semiconductor mode-locked laser and a single SOA to support up to 12 multiplexed channels with a bit error rate of 1e-12 at serial data rates of 14 Gbps without channel pre-emphasis, equalization or forward error correction. Individual channels reach error free operation at 25 Gbps and multi-channel operation at 25 Gb…
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We demonstrate a complete Silicon Photonics WDM link relying on a single section semiconductor mode-locked laser and a single SOA to support up to 12 multiplexed channels with a bit error rate of 1e-12 at serial data rates of 14 Gbps without channel pre-emphasis, equalization or forward error correction. Individual channels reach error free operation at 25 Gbps and multi-channel operation at 25 Gbps is shown to be compatible with standard 7% overhead hard decision forward error correction. Silicon Photonics transmitter and receiver chips are hybridly integrated with driver and receiver electronics. A detailed link model is derived and verified. Particular emphasis is placed on accurate system level modeling of laser RIN, SOA amplified spontaneous emission noise and receiver noise. The impact of the electrical receiver bandwidth and non-Gaussian statistics on level dependent amplified spontaneous emission noise are investigated in detail. The channel count scalability as limited by SOA saturation is further analyzed taking cross gain modulation and four wave mixing into account. While semiconductor mode-locked lasers have been identified as a potential light source for low cost Datacom WDM transceivers for some time, this is, to the best of our knowledge, the first comprehensive investigation of the overall link budget in a Silicon Photonics implementation showing this technology to be a credible contender for low latency datacenter interconnects.
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Submitted 27 May, 2016;
originally announced May 2016.
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High Speed WDM Interconnect Using Silicon Photonics Ring Modulators and Mode-Locked Laser
Authors:
Juliana Müller,
Johannes Hauck,
Alvaro Moscoso-Mártir,
Nicolas Chimot,
Sebastian Romero-García,
Bin Shen,
Florian Merget,
François Lelarge,
Jeremy Witzens
Abstract:
We demonstrate an 8 by 14 Gbps compatible WDM link based on a single-section semiconductor mode-locked laser, silicon photonics resonant ring modulators and joint channel reamplification with a semiconductor optical amplifier operated in the linear regime. Individual channels reach a data rate of 25 Gbps with signal quality-factors above 7.
We demonstrate an 8 by 14 Gbps compatible WDM link based on a single-section semiconductor mode-locked laser, silicon photonics resonant ring modulators and joint channel reamplification with a semiconductor optical amplifier operated in the linear regime. Individual channels reach a data rate of 25 Gbps with signal quality-factors above 7.
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Submitted 26 October, 2015;
originally announced October 2015.
