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Do different kinds of photon-pair sources have the same indistinguishability in quantum silicon photonics?
Authors:
Jong-Moo Lee,
Alessio Baldazzi,
Matteo Sanna,
Stefano Azzini,
Joon Tae Ahn,
Myung Lae Lee,
Young-Ik Sohn,
Lorenzo Pavesi
Abstract:
In the same silicon photonic integrated circuit, we compare two types of integrated degenerate photon-pair sources (microring resonators or waveguides) by means of Hong-Ou-Mandel (HOM) interference experiments. Two nominally identical microring resonators are coupled to two nominally identical waveguides which form the arms of a Mach-Zehnder interferometer. This is pumped by two lasers at two diff…
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In the same silicon photonic integrated circuit, we compare two types of integrated degenerate photon-pair sources (microring resonators or waveguides) by means of Hong-Ou-Mandel (HOM) interference experiments. Two nominally identical microring resonators are coupled to two nominally identical waveguides which form the arms of a Mach-Zehnder interferometer. This is pumped by two lasers at two different wavelengths to generate, by spontaneous four-wave mixing, degenerate photon pairs. In particular, the microring resonators can be thermally tuned in or out of resonance with the pump wavelengths, thus choosing either the microring resonators or the waveguides as photon-pair sources, respectively. In this way, an on-chip HOM visibility of 94% with microring resonators and 99% with straight waveguides is measured upon filtering. We compare our experimental results with theoretical simulations of the joint spectral intensity and the purity of the degenerate photon pairs. We verify that the visibility is connected to the sources' indistinguishability, which can be quantified by the overlap between the joint spectral amplitudes (JSA) of the photon pairs generated by the two sources. We estimate a JSAs overlap of 98% with waveguides and 89% with microring resonators.
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Submitted 30 January, 2024; v1 submitted 17 May, 2023;
originally announced May 2023.
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Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001)
Authors:
Pankul Dhingra,
Patrick Su,
Brian D. Li,
Ryan D. Hool,
Aaron J. Muhowski,
Mijung Kim,
Daniel Wasserman,
John Dallesasse,
Minjoo Larry Lee
Abstract:
Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm. With the development of nitride, arsenide, and antimonide lasers based on quantum well (QW) and quantum dot (QD) active regions, the wavelength palette of integrated III-V lasers on Si currently spans from…
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Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm. With the development of nitride, arsenide, and antimonide lasers based on quantum well (QW) and quantum dot (QD) active regions, the wavelength palette of integrated III-V lasers on Si currently spans from 400 nm to 11 μm with a crucial gap in the red-wavelength regime of 630-750 nm. Here, we demonstrate the first red InGaP QW and far-red InP QD lasers monolithically grown on CMOS compatible Si (001) substrates with continuous-wave operation at room temperature. A low-threshold current density of 550 A/cm2 and 690 A/cm2 with emission at 680-730 nm was achieved for QW and QD lasers on Si, respectively. This work takes the first vital step towards integration of visible red lasers on Si allowing the utilization of integrated photonics for applications including biophotonic sensing, quantum computing, and near-eye displays.
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Submitted 25 September, 2021;
originally announced September 2021.
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Enhanced Room Temperature Infrared LEDs using Monolithically Integrated Plasmonic Materials
Authors:
Andrew F. Briggs,
Leland Nordin,
Aaron J. Muhowski,
Evan Simmons,
Pankul Dhingra,
Minjoo L. Lee,
Viktor A. Podolskiy,
Daniel Wasserman,
Seth R. Bank
Abstract:
Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the ENZ and plasmonic response is achieved near their plasma frequencies, limiting plasmonic optoelectronic device design flexibility. Here, we leverage an all-epita…
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Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the ENZ and plasmonic response is achieved near their plasma frequencies, limiting plasmonic optoelectronic device design flexibility. Here, we leverage an all-epitaxial approach to monolithically and seamlessly integrate designer plasmonic materials into a quantum dot light emitting diode (LED), leading to a ~5.6 x enhancement over an otherwise identical non-plasmonic control sample. Devices exhibited optical powers comparable, and temperature performance far superior, to commercially-available devices.
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Submitted 25 August, 2020; v1 submitted 6 May, 2020;
originally announced May 2020.
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A Large-Scale GaP-on-Diamond Integrated Photonics Platform for NV Center-Based Quantum Information
Authors:
Michael Gould,
Srivatsa Chakravarthi,
Ian R. Christen,
Nicole Thomas,
Shabnam Dadgostar,
Yuncheng Song,
Minjoo Larry Lee,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place th…
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We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place the platform in a strong position to realize measurement-based quantum information protocols utilizing the NV center in diamond.
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Submitted 16 October, 2015;
originally announced October 2015.
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Low-spatial coherence electrically-pumped semiconductor laser for speckle-free full-field imaging
Authors:
B. Redding,
A. Cerjan,
X. Huang,
M. L. Lee,
A. D. Stone,
M. A. Choma,
H. Cao
Abstract:
The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically-pumped semiconductor laser based on a nov…
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The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically-pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ~1000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications.
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Submitted 5 October, 2014;
originally announced October 2014.
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Waveguide-integrated single-crystalline GaP resonators on diamond
Authors:
Nicole Thomas,
Russell J. Barbour,
Yuncheng Song,
Minjoo Larry Lee,
Kai-Mei C. Fu
Abstract:
Large-scale entanglement of nitrogen-vacancy (NV) centers in diamond will require integration of NV centers with optical networks. Toward this goal, we present the fabrication of single-crystalline gallium phosphide (GaP) resonator-waveguide coupled structures on diamond. We demonstrate coupling between 1 μm diameter GaP disk resonators and waveguides with a loaded Q factor of 3,800, and evaluate…
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Large-scale entanglement of nitrogen-vacancy (NV) centers in diamond will require integration of NV centers with optical networks. Toward this goal, we present the fabrication of single-crystalline gallium phosphide (GaP) resonator-waveguide coupled structures on diamond. We demonstrate coupling between 1 μm diameter GaP disk resonators and waveguides with a loaded Q factor of 3,800, and evaluate their potential for efficient photon collection if integrated with single photon emitters. This work opens a path toward scalable NV entanglement in the hybrid GaP/diamond platform, with the potential to integrate on-chip photon collection, switching, and detection for applications in quantum information processing.
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Submitted 23 April, 2014;
originally announced April 2014.
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Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities
Authors:
Kelley Rivoire,
Sonia Buckley,
Yuncheng Song,
Minjoo Larry Lee,
Jelena Vuckovic
Abstract:
We demonstrate room temperature visible wavelength photoluminescence from In0.5Ga0.5As quantum dots embedded in a GaP membrane. Time-resolved above band photoluminescence measurements of quantum dot emission show a biexpontential decay with lifetimes of ~200 ps. We fabricate photonic crystal cavities which provide enhanced outcoupling of quantum dot emission, allowing the observation of narrow lin…
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We demonstrate room temperature visible wavelength photoluminescence from In0.5Ga0.5As quantum dots embedded in a GaP membrane. Time-resolved above band photoluminescence measurements of quantum dot emission show a biexpontential decay with lifetimes of ~200 ps. We fabricate photonic crystal cavities which provide enhanced outcoupling of quantum dot emission, allowing the observation of narrow lines indicative of single quantum dot emission. This materials system is compatible with monolithic integration on Si, and is promising for high efficiency detection of single quantum dot emission as well as optoelectronic devices emitting at visible wavelengths.
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Submitted 5 January, 2012;
originally announced January 2012.
