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Ultra-Wide Bandgap Ga$_2$O$_3$-on-SiC MOSFETs
Authors:
Yiwen Song,
Arkka Bhattacharyya,
Anwarul Karim,
Daniel Shoemaker,
Hsien-Lien Huang,
Saurav Roy,
Craig McGray,
Jacob H. Leach,
**woo Hwang,
Sriram Krishnamoorthy,
Sukwon Choi
Abstract:
Ulta-wide bandgap semiconductors based on $β$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the commercialization of Ga$_2$O$_3$ electronics is overheating, which impacts the device's performance and reliability. We fabricated a Ga$_2$O…
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Ulta-wide bandgap semiconductors based on $β$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the commercialization of Ga$_2$O$_3$ electronics is overheating, which impacts the device's performance and reliability. We fabricated a Ga$_2$O$_3$/4H-SiC composite wafer using a fusion-bonding method. A low temperature ($\le$ 600 $^{\circ}$C) epitaxy and device processing approach based on low-temperature (LT) metalorganic vapor phase epitaxy is developed to grow a Ga$_2$O$_3$ epitaxial channel layer on the composite wafer and subsequently fabricate into Ga$_2$O$_3$ power MOSFETs. This LT approach is essential to preserve the structural integrity of the composite wafer. These LT-grown epitaxial Ga$_2$O$_3$ MOSFETs deliver high thermal performance (56% reduction in channel temperature), high voltage blocking capabilities up to 2.45 kV, and power figures of merit of $\sim$ 300 MW/cm$^2$, which is a record high for any heterogeneously integrated Ga$_2$O$_3$ devices reported to date. This work is the first realization of multi-kilovolt homoepitaxial Ga$_2$O$_3$ power MOSFETs fabricated on a composite substrate with high heat transfer performance which delivers state-of-the-art power density values while running much cooler than those on native substrates. Thermal characterization and modeling results reveal that a Ga$_2$O$_3$/diamond composite wafer with a reduced Ga$_2$O$_3$ thickness ($\sim$ 1 $μ$m) and thinner bonding interlayer ($<$ 10 nm) can reduce the device thermal impedance to a level lower than today's GaN-on-SiC power switches.
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Submitted 21 February, 2023; v1 submitted 13 October, 2022;
originally announced October 2022.
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Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations
Authors:
Malik Hassanaly,
Hariswaran Sitaraman,
Kevin L. Schulte,
Aaron J. Ptak,
John Simon,
Kevin Udwary,
Jacob H. Leach,
Heather Splawn
Abstract:
Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cells for space and terrestrial applications. However, recent demonstrations of ultra fast growth rates ($\sim$ 500 $μ$m/h) via uncracked hydrides are not well described by present models for the growth. Therefore, it is ne…
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Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cells for space and terrestrial applications. However, recent demonstrations of ultra fast growth rates ($\sim$ 500 $μ$m/h) via uncracked hydrides are not well described by present models for the growth. Therefore, it is necessary to understand the kinetics of the growth process and its coupling with transport phenomena, so as to enable fast and uniform epitaxial growth. In this work, we derive a kinetic model using experimental data and integrate it into a computational fluid dynamics simulation of an HVPE growth reactor. We also modify an existing hydride cracking model that we validate against numerical simulations and experimental data. We show that the developed growth model and the improved cracking model are able to reproduce experimental growth measurements of \ce{GaAs} in an existing HVPE system.
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Submitted 22 September, 2021;
originally announced September 2021.
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Optical and structural properties of Si doped $β$-Ga$_2$O$_3$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy
Authors:
Bahadir Kucukgok,
David J. Mandia,
Jacob H. Leach,
Keith R. Evans,
Jeffrey A. Eastman,
Hua Zhou,
John Hryn,
Jeffrey W. Elam,
Angel Yanguas-Gil
Abstract:
We report the optical, electrical, and structural properties of Si doped $β$-Ga$_2$O$_3$ films grown on (010)-oriented $β$-Ga$_2$O$_3$ substrate via HVPE. Our results show that, despite growth rates that are more than one order of magnitude faster than MOCVD, films with mobility values of up to 95 cm$^2$V$^{-1}$s$^{-1}$ at a carrier concentration of 1.3$\times$10$^{17}$ cm$^{-3}$ can be achieved u…
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We report the optical, electrical, and structural properties of Si doped $β$-Ga$_2$O$_3$ films grown on (010)-oriented $β$-Ga$_2$O$_3$ substrate via HVPE. Our results show that, despite growth rates that are more than one order of magnitude faster than MOCVD, films with mobility values of up to 95 cm$^2$V$^{-1}$s$^{-1}$ at a carrier concentration of 1.3$\times$10$^{17}$ cm$^{-3}$ can be achieved using this technique, with all Si-doped samples showing n-type behavior with carrier concentrations in the range of 10$^{17}$ to 10$^{19}$ cm$^{-3}$. All samples showed similar room temperature photoluminescence, with only the samples with the lowest carrier concentration showing the presence of a blue luminescence, and the Raman spectra exhibiting only phonon modes that belong to $β$-Ga$_2$O$_3$, indicating that the Ga$_2$O$_3$ films are phase pure and of high crystal quality. We further evaluated the epitaxial quality of the films by carrying out grazing incidence X-ray scattering measurements, which allowed us to discriminate the bulk and film contributions. Finally, MOS capacitors were fabricated using ALD HfO$_2$ to perform C-V measurements. The carrier concentration and dielectric values extracted from the C-V characteristics are in good agreement with Hall probe measurements. These results indicate that HVPE has a strong potential to yield device-quality $β$-Ga$_2$O$_3$ films that can be utilized to develop vertical devices for high-power electronics applications.
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Submitted 21 June, 2019;
originally announced June 2019.
