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Direct-write projection lithography of quantum dot micropillar single photon sources
Authors:
Petros Androvitsaneas,
Rachel N. Clark,
Matthew Jordan,
Tomas Peach,
Stuart Thomas,
Saleem Shabbir,
Angela D. Sobiesierski,
Aristotelis Trapalis,
Ian A. Farrer,
Wolfgang W. Langbein,
Anthony J. Bennett
Abstract:
We have developed a process to mass-produce quantum dot micropillar cavities using direct-write lithography. This technique allows us to achieve high volume patterning of high aspect ratio pillars with vertical, smooth sidewalls maintaining a high quality factor for diameters below 2.0 $μ$m. Encapsulating the cavities in a thin layer of oxide (Ta$_2$O$_5$) prevents oxidation in the atmosphere, pre…
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We have developed a process to mass-produce quantum dot micropillar cavities using direct-write lithography. This technique allows us to achieve high volume patterning of high aspect ratio pillars with vertical, smooth sidewalls maintaining a high quality factor for diameters below 2.0 $μ$m. Encapsulating the cavities in a thin layer of oxide (Ta$_2$O$_5$) prevents oxidation in the atmosphere, preserving the optical properties of the cavity over months of ambient exposure. We confirm that single dots in the cavities can be deterministically excited to create high purity indistinguishable single photons with interference visibility $(96.2\pm0.7)\%$.
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Submitted 31 March, 2023;
originally announced April 2023.
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Room-Temperature Quantum Emitter in Aluminum Nitride
Authors:
Sam G. Bishop,
John P. Hadden,
Faris D. Alzahrani,
Reza Hekmati,
Diana L. Huffaker,
Wolfgang W. Langbein,
Anthony J. Bennett
Abstract:
A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep with…
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A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep within the band gap of aluminum nitride. Using spectral, polarization, and photon-counting time-resolved measurements we demonstrate bright ($>10^5$ counts per second), pure ($g^{(2)}(0) < 0.2$), and polarized room-temperature quantum light emission from color centers in this commercially important semiconductor.
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Submitted 3 August, 2022;
originally announced August 2022.
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Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens
Authors:
S. G. Bishop,
J. P. Hadden,
R. Hekmati,
J. K. Cannon,
W. W. Langbein,
A. J. Bennett
Abstract:
Among the wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum light at room temperature. In this paper, we report on a bright color center in a semi-polar ga…
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Among the wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum light at room temperature. In this paper, we report on a bright color center in a semi-polar gallium nitride substrate, emitting at room temperature in the near-infrared. We show that a hemispherical solid immersion lens, near index matched to the semiconductor, can be used to enhance the photon collection efficiency by a factor of $4.3\pm0.1$, whilst improving the lateral resolution by a factor equal to the refractive index of the lens.
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Submitted 14 February, 2022;
originally announced February 2022.
