-
A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films
Authors:
Suzanne Lancaster,
Thomas Mikolajick,
Stefan Slesazeck
Abstract:
A wakeup scheme for ferroelectric thin Hf$_{0.5}$Zr$_{0.5}$O$_2$ films is presented, based on a gradual switching approach using multiple short pulses with a voltage amplitude roughly equal to the coercive voltage. This enables the on-chip wakeup and switching operation of ferroelectric devices such as tunnel junctions (FTJs) with identical pulses. After wakeup using alternating pulse trains which…
▽ More
A wakeup scheme for ferroelectric thin Hf$_{0.5}$Zr$_{0.5}$O$_2$ films is presented, based on a gradual switching approach using multiple short pulses with a voltage amplitude roughly equal to the coercive voltage. This enables the on-chip wakeup and switching operation of ferroelectric devices such as tunnel junctions (FTJs) with identical pulses. After wakeup using alternating pulse trains which gradually switch the film polarization, FTJ operation is demonstrated to be as effective as after `normal' wakeup, with bipolar pulses of an amplitude larger than the coercive voltage. In this case the voltage applied during wakeup was reduced by 26\%, thereby lowering the required operating power.
△ Less
Submitted 14 December, 2023;
originally announced December 2023.
-
Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing
Authors:
Suzanne Lancaster,
Quang T. Duong,
Erika Covi,
Thomas Mikolajick,
Stefan Slesazeck
Abstract:
HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests the application in circuits for massive parallel computation. In this work, we discuss one example circuit of a differential synaptic cell featuring multiple pa…
▽ More
HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests the application in circuits for massive parallel computation. In this work, we discuss one example circuit of a differential synaptic cell featuring multiple parallel connected FTJ devices. Moreover, from the circuit requirements we deduce that the absolute difference in currents (Ion - Ioff) is a more critical figure of merit than the tunneling electroresistance ratio (TER). Based on this, we discuss the potential of FTJ device optimization by means of electrode work function engineering in bilayer HZO/Al2O3 FTJs.
△ Less
Submitted 1 November, 2022; v1 submitted 21 September, 2022;
originally announced September 2022.
-
Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene
Authors:
Suzanne Lancaster,
Iciar Arnay,
Ruben Guerrero,
Adrían Gudín,
Thomas Mikolajick,
Paolo Perna,
Stefan Slesazeck
Abstract:
Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was investigated. Different metals were deposited as nucleation layers via dc sputtering. Ta, which oxidizes in air to form a sub-stoichiometric oxide, was compared to Pt, which offers a more stable electrode. For thicker in…
▽ More
Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was investigated. Different metals were deposited as nucleation layers via dc sputtering. Ta, which oxidizes in air to form a sub-stoichiometric oxide, was compared to Pt, which offers a more stable electrode. For thicker interlayers, Ta leads to unstable switching behavior of the HZO film. Conversely, at smaller thicknesses, a higher Pr can be achieved with an oxidized Ta interlayer. In both cases, Pt offers higher endurance. The choice of interlayer may strongly depend on the required application.
△ Less
Submitted 6 September, 2022; v1 submitted 30 August, 2022;
originally announced August 2022.
-
Investigating charge trap** in ferroelectric thin films through transient measurements
Authors:
Suzanne Lancaster,
Patrick D Lomenzo,
Moritz Engl,
Bohan Xu,
Thomas Mikolajick,
Uwe Schroeder,
Stefan Slesazeck
Abstract:
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trap** in ferroelectric thin films by analyzing the magnitude and rate of polarization loss. Exemplary measurements have been performed on Hf0.5Zr0.5O2 (HZO) and HZO/Al2O3 films, as a…
▽ More
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trap** in ferroelectric thin films by analyzing the magnitude and rate of polarization loss. Exemplary measurements have been performed on Hf0.5Zr0.5O2 (HZO) and HZO/Al2O3 films, as a function of pulse width and temperature. It is found that the competing effects of the depolarization field, internal bias field and charge trap** lead to a characteristic Gaussian dependence of the rate of polarization loss on the delay time. From this, a charge trap** and screening model could be identified which describes the dynamics of polarization loss on short timescales.
△ Less
Submitted 29 June, 2022;
originally announced June 2022.
-
Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks
Authors:
Suzanne Lancaster,
Iciar Arnay,
Ruben Guerrero,
Adrian Gudín,
Alejandra Guedeja-Marrón,
Jose Manuel Diez Toledano,
Jan Gärtner,
Alberto Anadón,
Maria Varela,
Julio Camarero,
Thomas Mikolajick,
Paolo Perna,
Stefan Slesazeck
Abstract:
Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD) of ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) directly on graphene (Gr)/Co/heavy metal (HM) epitaxial stacks is investigated via the implementation…
▽ More
Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD) of ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) directly on graphene (Gr)/Co/heavy metal (HM) epitaxial stacks is investigated via the implementation of several nucleation methods. With an in-situ method employing an Al$_2$O$_3$ layer, the HZO demonstrates a remanent polarization (2Pr) of 19.2 $μC/cm^2$. An ex-situ, naturally oxidized sputtered Ta layer for nucleation produces a film with 2Pr of 10.81 $μC/cm^2$, but a lower coercive field over the stack and switching enduring over subsequent cycles. Magnetic hysteresis measurements taken before and after ALD deposition show strong perpendicular magnetic anisotropy (PMA), with only slight deviations in the magnetic coercive fields due to the HZO deposition process, thus pointing to a good preservation of the single-layer Gr. X-ray diffraction measurements further confirm that the high-quality interfaces demonstrated in the stack remain unperturbed by the ferroelectric deposition and anneal.
△ Less
Submitted 23 March, 2023; v1 submitted 20 September, 2021;
originally announced September 2021.
-
Ferroelectric Tunneling Junctions for Edge Computing
Authors:
Erika Covi,
Quang T. Duong,
Suzanne Lancaster,
Viktor Havel,
Jean Coignus,
Justine Barbot,
Ole Richter,
Philip Klein,
Elisabetta Chicca,
Laurent Grenouillet,
Athanasios Dimoulas,
Thomas Mikolajick,
Stefan Slesazeck
Abstract:
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
△ Less
Submitted 5 July, 2021;
originally announced July 2021.
