Sub-20 kHz low frequency noise near ultraviolet miniature external cavity laser diode
Authors:
R Kervazo,
A Congar,
G Perin,
L Lablonde,
R Butté,
N Grandjean,
L Bodiou,
J Charrier,
S Trebaol
Abstract:
We present a compact InGaN fiber Bragg grating (FBG) semiconductor laser diode operating below 400 nm in the single-mode emission regime. This compact coherent laser source exhibits an intrinsic linewidth of 14 kHz in the near-UV range and a side-mode suppression ratio reaching up to 40 dB accompanied by a mW-level output power. Furthermore, the properties of the FBG, including its central wavelen…
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We present a compact InGaN fiber Bragg grating (FBG) semiconductor laser diode operating below 400 nm in the single-mode emission regime. This compact coherent laser source exhibits an intrinsic linewidth of 14 kHz in the near-UV range and a side-mode suppression ratio reaching up to 40 dB accompanied by a mW-level output power. Furthermore, the properties of the FBG, including its central wavelength, bandwidth, and reflectivity, can be readily customized to fulfill specific requirements. As a result, the small footprint design of this laser is compatible with integration into a standard butterfly package to ease the lab-to-market technology transfer. The combination of low frequency noise and fibered output signal positions these FBG laser systems as strong candidates for hybridization with integrated photonic platforms tailored for quantum information processing and metrology.
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Submitted 24 May, 2024;
originally announced May 2024.
Narrow Linewidth near-UV InGaN Laser Diode based on External Cavity Fiber Bragg Grating
Authors:
Antoine Congar,
Mathilde Gay,
Georges Perin,
Dominique Mammez,
Jean-Claude Simon,
Pascal Besnard,
Julien Rouvillain,
Thierry Georges,
Laurent Lablonde,
Thierry Robin,
Stéphane Trebaol
Abstract:
We realize a fiber Bragg grating InGaN based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrow band fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency regimes for the self-injection locked diode. The device exhibits 44 dB side-mode-suppression-ratio and mW output power. Detailed frequency noise analysis reveals s…
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We realize a fiber Bragg grating InGaN based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrow band fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency regimes for the self-injection locked diode. The device exhibits 44 dB side-mode-suppression-ratio and mW output power. Detailed frequency noise analysis reveals sub-MHz integrated linewidth and 16 kHz intrinsic linewidth. Such a narrow linewidth laser diode in the near-UV domain with a compact and low-cost design could find applications whenever coherency and interferometric resolutions are needed.
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Submitted 8 February, 2021;
originally announced February 2021.
