Growth of VO2-ZnS Thin Film Cavity for Adaptive Thermal Emission
Authors:
Raymond Yu,
Bo K. Shrewsbury,
Claire Wu,
Harish Kumarasubramanian,
Mythili Surendran,
Jayakanth Ravichandran,
Michelle L. Povinelli
Abstract:
Low-weight, passive, thermal-adaptive radiation technologies are needed to maintain an operable temperature for spacecraft while they experience various energy fluxes. In this study, we used a thin-film coating with the Fabry-Perot (FP) effect to enhance emissivity contrast (Δε) between VO2 phase-change states. This coating utilizes a novel hybrid material architecture that combines VO2 with a mid…
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Low-weight, passive, thermal-adaptive radiation technologies are needed to maintain an operable temperature for spacecraft while they experience various energy fluxes. In this study, we used a thin-film coating with the Fabry-Perot (FP) effect to enhance emissivity contrast (Δε) between VO2 phase-change states. This coating utilizes a novel hybrid material architecture that combines VO2 with a mid- and long-wave infrared transparent chalcogenide, zinc sulfide (ZnS), as a cavity spacer layer. We simulated the design parameter space to obtain a theoretical maximum Δε of 0.63 and grew prototype devices. Using X-ray diffraction, Raman spectroscopy, and Fourier Transform Infrared (FTIR) Spectroscopy, we determined that an intermediate buffer layer of TiO2 is necessary to execute the crystalline growth of monoclinic VO2 on ZnS. Through temperature-dependent FTIR spectroscopy measurements, our fabricated devices demonstrated FP-cavity enhanced adaptive thermal emittance.
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Submitted 12 June, 2024;
originally announced June 2024.
Epitaxial rare-earth doped complex oxide thin films for infrared applications
Authors:
Mythili Surendran,
Joshua Rollag,
Christopher E. Stevens,
Ching-Tai Fu,
Harish Kumarasubramanian,
Zhe Wang,
Darrell G. Schlom,
Ricky Gibson,
Joshua R. Hendrickson,
Jayakanth Ravichandran
Abstract:
Rare earth dopants are one of the most extensively studied optical emission centers for a broad range of applications such as laser optoelectronics, sensing, lighting, and quantum information technologies due to their narrow optical linewidth and exceptional coherence properties. Epitaxial doped oxide thin films can serve as a promising and controlled host to investigate rare-earth dopants suitabl…
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Rare earth dopants are one of the most extensively studied optical emission centers for a broad range of applications such as laser optoelectronics, sensing, lighting, and quantum information technologies due to their narrow optical linewidth and exceptional coherence properties. Epitaxial doped oxide thin films can serve as a promising and controlled host to investigate rare-earth dopants suitable for scalable quantum memories, on-chip lasers and amplifiers. Here, we report high-quality epitaxial thin films of Tm-doped CaZrO$_3$ grown by pulsed laser deposition for infrared optoelectronic and quantum memory applications. We perform extensive structural and chemical characterization to probe the crystallinity of the films and the do** behavior. Low temperature photoluminescence measurements show sharp radiative transitions in the short-wave infrared range of 1.75 - 2 μm.
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Submitted 19 February, 2024;
originally announced February 2024.